NEW ERA UNIVERSITY

No.9 Central Avenue, New Era, Quezon City, 1107 Metro Manila
College of Engineering and Architecture

LABORATORY REPORT IN
ELECTRONIC CIRCUIT AND DEVICES

Eliver Ivan De Leon

Experiment 8: BJT Biasing: Voltage Divider
Materials:

Transistor (2N3904), two multimeters, power supply

Objective:

To design a Voltage Divider BJT Bias circuit

Procedure:
1: Measure and record the value of the transistor in
your module.
2: Given the following: VCC = 12.0 V, IC = 5.00 mA,
VCE = 4.00 V, VE = 2.00 V
Assume VBE = 0.52 V Set R1 = 25.0 k
Calculate values for RE, RC, R2, and I2 . Set these R
values in the module and measure
I2, IC, VCE and VE . Suggestion: Connect the 1000
ohm resistor in series with R2 and
include its value with R2. The voltage across it, in
millivolts, equals the value of I2, in
microamperes.
3: Repeat step 2 but change R1 to 8.0 k
4: Given the following: VCC = 12.0 V, IC = 10.00 mA,
VCE = 4.00 V, VE = 4.00 V
Assume VBE = 0.52 V Set R1 = 25.0 k
Calculate values for RE, RC, R2, and I2 . Set these R
values in the module and measure
I2, IC, VCE and VE .
5: Repeat step 4 but change R1 to 8.0 k
Data Sheet:

1: Value of in 2-3 β __ 162.87______

1: Value of in 4-5 β __ 167.22______
 2) 25K
VCC = 12.0 V, IC = 5.00 mA, VCE = 4.00 V, VE = 2.00 V ,
VBE = 0.52 V
 3) 8K
VCC = 12.0 V, IC = 5.00 mA, VCE = 4.00 V, VE = 2.00 V ,
VBE = 0.52 V
 4) 25K

VCC = 12.0 V, IC = 10.00 mA, VCE = 4.00 V, VE = 4.00 V ,

VBE = 0.52 V
 5) 8K

VCC = 12.0 V, IC = 10.00 mA, VCE = 4.00 V, VE = 4.00 V ,

VBE = 0.52 V