SPP15N60C3, SPI15N60C3

SPA15N60C3

Cool MOS™ Power Transistor VDS @ Tjmax 650 V

Feature RDS(on) 0.28 Ω
• New revolutionary high voltage technology ID 15 A
• Ultra low gate charge
• Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

• Extreme dv/dt rated

• Ultra low effective capacitances 1
2
3

• Improved transconductance P-TO220-3-31

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code Marking

SPP15N60C3 PG-TO220 Q67040-S4600 15N60C3
SPI15N60C3 PG-TO262 Q67040-S4601 15N60C3
SPA15N60C3 PG-TO220FP SP000216325 15N60C3

Maximum Ratings
Parameter Symbol Value Unit
SPP_I SPA
Continuous drain current ID A
TC = 25 °C 15 151)
TC = 100 °C 9.4 9.41)
Pulsed drain current, tp limited by Tjmax ID puls 45 45 A
Avalanche energy, single pulse EAS 460 460 mJ
ID=7.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2) EAR 0.8 0.8

ID=15A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax IAR 15 15 A

Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 156 34 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Reverse diode dv/dt 6) dv/dt 15 V/ns

Rev. 3.2 page 1 2009-12-22

Rev. 3.3 Page 1 2018-02-12
 SPP15N60C3, SPI15N60C3
SPA15N60C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
VDS = 480 V, ID = 15 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.8 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
Soldering temperature, wavesoldering Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s 3)

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS VGS=0V, ID=15A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=675µA, VGS =VDS 2.1 3 3.9
Zero gate voltage drain current I DSS VDS=600V, V GS=0V, µA
Tj=25°C - 0.1 1
Tj=150°C - - 100
Gate-source leakage current I GSS VGS=30V, V DS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=9.4A Ω
Tj=25°C - 0.25 0.28
Tj=150°C - 0.68 -
Gate input resistance RG f=1MHz, open drain - 1.23 -

Rev. 3.3 Page 2 2018-02-12

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SPA15N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*R DS(on)max, - 11.9 - S
ID=9.4A

Input capacitance Ciss VGS=0V, VDS=25V, - 1660 - pF

Output capacitance Coss f=1MHz - 540 -
Reverse transfer capacitance Crss - 40 -
Effective output capacitance,4) Co(er) VGS=0V, - 80 -
energy related VDS=0V to 480V

Effective output capacitance,5) Co(tr) - 127 -

time related
Turn-on delay time td(on) VDD=480V, VGS=0/10V, - 10 - ns
Rise time tr ID=15A, - 5 -
Turn-off delay time td(off) RG =4.3Ω - 50 80
Fall time tf - 5 10

Gate Charge Characteristics

Gate to source charge Qgs VDD=480V, ID=15A - 7 - nC
Gate to drain charge Qgd - 29 -
Gate charge total Qg VDD=480V, ID=15A, - 63 -
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=480V, ID=15A - 5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AV AR
3Soldering temperature for TO-263: 220°C, reflow
4C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
o(er)
5C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS.
6I <=I , di/dt<=400A/us, V
SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.

Rev. 3.2 page 3 2009-12-22

Rev. 3.3 Page 3 2018-02-12
 SPP15N60C3, SPI15N60C3
SPA15N60C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 15 A
forward current
Inverse diode direct current, I SM - - 45
pulsed
Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V
Reverse recovery time t rr VR =480V, IF =IS , - 460 - ns
Reverse recovery charge Q rr diF/dt=100A/µs - 27 - µC
Peak reverse recovery current I rrm - 55 - A
Peak rate of fall of reverse dirr/dt Tj=25°C - 1300 - A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
Rth1 0.012 0.012 K/W Cth1 0.0002495 0.0002495 Ws/K
Rth2 0.023 0.023 Cth2 0.0009406 0.0009406
Rth3 0.043 0.043 Cth3 0.001298 0.001298
Rth4 0.156 0.176 Cth4 0.00362 0.00362
Rth5 0.178 0.371 Cth5 0.009046 0.008025
Rth6 0.072 2.522 Cth6 0.412 0.412

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 3.3 Page 4 2018-02-12

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SPA15N60C3

1 Power dissipation 2 Power dissipation FullPAK

Ptot = f (TC) Ptot = f (TC)

SPP15N60C3
170 35
W
W
140

120 25

Ptot
Ptot

100 20

80
15

60
10
40

5
20

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC Tj

3 Safe operating area 4 Safe operating area FullPAK

ID = f ( VDS ) ID = f (VDS)
parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C
2
10 10 2

A A

10 1 10 1
ID

ID

10 0 10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms tp = 0.001 ms
tp = 1 ms tp = 0.01 ms
DC tp = 0.1 ms
10 -1 10 -1 tp = 1 ms
tp = 10 ms
DC

10 -2 0 1 2 3
10 -2 0 1 2 3
10 10 10 V 10 10 10 10 V 10
VDS VDS

Rev. 3.2 page 5 2009-12-22

Rev. 3.3 Page 5 2018-02-12
 SPP15N60C3, SPI15N60C3
SPA15N60C3

5 Transient thermal impedance 6 Transient thermal impedance FullPAK

ZthJC = f (tp) ZthJC = f (tp)
parameter: D = tp/T parameter: D = tp/t
10 1 10 1
K/W K/W

10 0 10 0
ZthJC

ZthJC
10 -1 10 -1

D = 0.5 D = 0.5
10 -2 D = 0.2 10 -2 D = 0.2
D = 0.1 D = 0.1
D = 0.05 D = 0.05
D = 0.02 D = 0.02
D = 0.01 D = 0.01
10 -3 10 -3
single pulse single pulse

10 -4 -7 -6 -5 -4 -3 -1
10 -4 -7 -6 -5 -4 -3 -2 -1 1
10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

7 Typ. output characteristic 8 Typ. output characteristic

ID = f (VDS); Tj =25°C ID = f (VDS); Tj =150°C
parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS
60 30
Vgs = 20V Vgs = 20V
Vgs = 7V Vgs = 7V
A Vgs = 6.5V A Vgs = 6V
Vgs = 6V Vgs = 5.5V
Vgs = 5.5V Vgs = 5V
Vgs = 5V Vgs = 4.5V
Vgs = 4.5V Vgs = 4V
40 Vgs = 4V 20
ID

ID

30 15

20 10

10 5

0 0
0 4 8 12 16 20 V 28 0 4 8 12 16 20 V 28
VDS VDS

Rev. 3.3 Page 6 2018-02-12

 SPP15N60C3, SPI15N60C3
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9 Typ. drain-source on resistance 10 Drain-source on-state resistance

RDS(on)=f(ID) RDS(on) = f (Tj)
parameter: Tj=150°C, VGS parameter : ID = 9.4 A, VGS = 10 V
SPP15N60C3
1.8 1.6
Vgs = 4V
Vgs = 4.5V
Ω Ω
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V 1.2

RDS(on)
RDS(on)

1.4 Vgs = 20V

1
1.2

0.8

1
0.6

0.8
0.4 98%
typ
0.6
0.2

0.4 0
0 5 10 15 20 A 30 -60 -20 20 60 100 °C 180
ID Tj

11 Typ. transfer characteristics 12 Typ. gate charge

ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate)
parameter: tp = 10 µs parameter: ID = 15 A pulsed
SPP15N60C3
60 16

V
A
25°C

12
VGS

40 0,2 VDS max

ID

10 0,8 VDS max

150°C

30 8

6
20

10
2

0 0
0 2 4 6 V 10 0 10 20 30 40 50 60 70 80 nC 100
VGS QGate

Rev. 3.2 page 7 2009-12-22

Rev. 3.3 Page 7 2018-02-12
 SPP15N60C3, SPI15N60C3
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13 Forward characteristics of body diode 14 Avalanche SOA

IF = f (VSD) IAR = f (tAR)
parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C
10 2 SPP15N60C3
15

A
A

10 1

IAR
IF

9 Tj(START)=25°C

6
10 0 Tj(START)=125°C
Tj = 25 °C typ
Tj = 150 °C typ
3
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -1 0 -3 -2 -1 0 1 2 4
0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 10 10 10 10 10 µs 10
VSD tAR

15 Avalanche energy 16 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: ID = 7.5 A, VDD = 50 V
SPP15N60C3
0.5 720

mJ
V(BR)DSS

680
E AS

660
0.3
640

620
0.2

600

580
0.1

560

0 540
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180
Tj Tj

Rev. 3.2 page 8 2009-12-22

Rev. 3.3 Page 8 2018-02-12
 SPP15N60C3, SPI15N60C3
SPA15N60C3

17 Avalanche power losses 18 Typ. capacitances

PAR = f (f ) C = f (VDS)
parameter: EAR =0.8mJ parameter: VGS =0V, f=1 MHz
900 10 4

W pF
Ciss

700
10 3
PAR

600

C
500 Coss
2
10
400

300

10 1 Crss
200

100

0 4 5 6
10 0
10 10 Hz 10 0 100 200 300 400 V 600

f VDS

19 Typ. Coss stored energy

Eoss=f(VDS)

15

µJ
E oss

0
0 100 200 300 400 V 600
VDS

Rev. 3.3 Page 9 2018-02-12

 SPP15N60C3, SPI15N60C3
SPA15N60C3

Definition of diodes switching characteristics

Rev. 3.3 Page 10 2018-02-12

 SPP15N60C3, SPI15N60C3
SPA15N60C3

PG-TO220-3-1, PG-TO220-3-21 : Outline

Rev. 3.2 page 11 2009-12-22

Rev. 3.3 Page 11 2018-02-12
 SPP16N50C3
SPI16N50C3, SPA16N50C3

Outline PG­TO220 FullPAK

1 2 3

MILLIMETERS
DIMENSIONS
MIN. MAX.
DOCUMENT NO.
A 4.50 4.90
Z8B00003319
A1 2.34 2.85
A2 2.42 2.86 REVISION
b 0.65 0.90 07
b1 0.95 1.38
b2 0.95 1.51 SCALE 5:1
b3 0.65 1.38 0 1 2 3 4 5mm
b4 0.65 1.51
c 0.40 0.63
D 15.67 16.15
D1 8.97 9.83 EUROPEAN PROJECTION
E 10.00 10.65
e 2.54
H 28.70 29.75
L 12.78 13.75
L1 2.83 3.45
øP 3.00 3.30 ISSUE DATE
Q 3.15 3.50 27.01.2017

Rev. 3.3 Page 12 2018-02-12

 SPP15N60C3, SPI15N60C3
SPA15N60C3

PG-TO262-3-1/PG-TO262-3-21 (I²-PAK)

Rev. 3.2 page 13 2009-12-22

Rev. 3.3 Page 13 2018-02-12
600VCoolMOSªC3PowerTransistor
SPx15N60C3

RevisionHistory
SPx15N60C3

Revision:2018-02-27,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
3.3 2018-02-27 Outline PG-TO-220 FullPAK update

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TrademarksupdatedAugust2015

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14 Rev.3.3,2018-02-27