N Channel MOSFET level 3

NDrain NGate NGate NDrain NGate NDrain NGate NDrain

mosn3

NSource
(a)

NBulk

NSource
(b)

NBulk

NSource
(c)

NBulk

NSource
(d)

NBulk

Figure 1: MOSFET Types

Form: mosn3: instance name n1 n2 n3 n4 n1 is the drain node, n2 is the gate node, n3 is the source node, n4 is the bulk node. Parameters:

parameter list

Parameter gamma: Bulk threshold parameter (V0.5 ) kp: Transconductance parameter (A/V2 ) l: Device length (m) w: Device width (m) ld: Lateral diusion length (m) wd: Lateral diusion width (m) nsub:Substrate doping (cm3 ) phi: Surface inversion potential (V) tox: Oxide thickness (m) u0: Surface mobility (cm2 /V-s) vt0: Zero bias threshold voltage (V) kappa: Saturation eld factor (m) t: Device temperature (degrees) tnom: Nominal temperature (degrees) nfs: Fast surface state density (cm2 ) eta: Static feedback on threshold voltage theta: Mobility modulation (1/V) tpg: Gate material type nss: Surface state density (cm2 ) vmax: Maximum carrier drift velocity (m/sec) xj: Metallurgical junction depth delta: Width eect on threshold voltage

Type DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE DOUBLE

Default value 0 0.000021 0.000002 0.00005 0 0 0 0.6 1 107 600 0 0.2 300.15 300.15 0 0 0 0 0 0 0 0

Required? no no no no no no no no no no no no no no no no no no no no no no

Example: mosn3:m1 2 3 0 0 l=1.2u w=20u Description: f REEDATM has the NMOS level 3 model based on the MOS level 3 model in SPICE. It uses the charge conservative Yang-Chatterjee model for modeling charge and capacitance. 1

DC Calculations: Constants used are: q k

0 s

Eg Cox

= 1.6021918 1019 (As) = 1.3806226 1023 (J/K ) = 8.85421487 1012 (F/m) = 11.7 0 7.02 104 T2 (V ) = 1.16 T + 1108 0 3.9 = (F ) TOX

(1) (2) (3) (4) (5) (6)

All parameters used are indicated in this font. Eective channel length and width: Lef f Wef f Depletion layer width coecient Xd = Built in voltage: Square root of substrate voltage: VBS 0 = VBS > 0 = SqVBS = SqVBS = PHI 0. 5 0.75 1 + PHI VBS (1 + PHI VBS ) PHI VBS 2 s q NSUB 106 (9) (10) = = L 2 LD W 2 WD (7) (8)

Vbi = VT0 GAMMA PHI

(11)

Short-channel eect correction factor: In a short channel device, device threshold voltage tends to lower since part of the depletion charge in the bulk terminates the electric elds at the source and drain. The value of this correction factor is determined by the metallurgical depth XJ. c0 c1 c2 T1 Fs = 0.0631353 = 0.8013292 = 0.01110777 = XJ (c0 + c1 Xd SqVBS + c2 (Xd SqVBS )2 ) = 1 LD + T1 Lef f 1( Xd SqVBS )2 XJ + Xd SqVBS (12) (13) (14) (15) (16)

Narrow channel eect correlation factor: The edge eects in a narrow channel cause the depletion charge to extend beyond the width of the channel. This has an eect of increasing the threshold voltage. Fn = s DELTA 2 Cox Wef f (17)

Static feedback coecient: The threshold voltage lowers because the charge under the gate terminal depleted by the drain junction eld increases with VDS . This eect is Drain Induced Barrier Lowering (DIBL). = 8.14 1022 ETA Lef f 3 Cox 2 (18)

Threshold voltage:

Vth = Vbi VDS + GAMMA SqVBS Fs + Fn SqVBS 2

(19)

Subthreshold operation: This variable is invoked depending on the value of the parameter NFS and is used only during subthreshold mode. q NFS 104 Fn GAMMA Fs Xn = 1 + + + (20) Cox 2 2 SqVBS Modied threshold voltage: This variable denes the limit between weak and strong inversion. NFS > 0 = Von = Vth + kT Xn q (21) (22) (23) (24)

NFS 0 = Von = Vth Subthreshold gate voltage: Vgsx = MAX(VGS , Von ) Surface mobility: s = U0 104 1 + THETA (Vgsx Vth )

Saturation voltage: Calculation of this voltage requires many steps. The eective mobility is calculated as ef f = s Fdrain where Fdrain = = 1.0 s VDS 1 + VMAX Lef f (25) (26) (27)

Wef f ef f Cox Lef f

The Taylor expansion of coecient of bulk charge is FB = GAMMA Fs + 2 Fn 4 SqVBS (28)

The standard value of saturation voltage is calculated as Vsat = Vgsx Vth 1 + FB (29)

The nal value of the saturation voltage depends on the parameter VMAX VMAX = 0 = Vdsat = Vsat VMAX Lef f VMAX > 0 = Vc = s Vdsat = Vsat + Vc
2 +V2 Vsat c

(30) (31) (32)

Velocity saturation drain voltage: This ensures that the drain voltage does not exceed the saturation voltage. Vdsx = MIN(VDS , Vdsat ) Drain Current: Linear Region: IDS = (33)

1 + Fb s Fdrain (Vgsx Vth Vdsx ) Vdsx U0 104 2 3

(34)

Saturation region: IDS = (VGS Vth Cuto Region:

1 + Fb Vdsat ) Vdsat 2

(35) (36)

IDS = 0

Channel length modulation: As VDS increases beyond Vdsat , the point where the carrier velocity begins to saturate moves towards the source. This is modeled by the term l . = Xd
2 E2 2 Xd Ep Xd p + KAPPA (VDS Vdsat ) 4 2

(37)

where Ep is the lateral eld at pinch-o and is given by Ep = VMAX s (1 Fdrain ) (38)
l

The drain current is multiplied by a correction factor lf act . This factor prevents the denominator Lef f from going to zero.
l

0.5 Lef f > 0.5 Lef f

= =

lf act = lf act

Lef f Lef f 4 l = Lef f

(39)
l

(40)

The corrected value of drain-source current is IDSnew = IDS lf act (41)

Subthreshold operation: For subthreshold operation, if the fast surface density parameter NFS is specied and VGS Von , then the nal value of drain-source current is given by IDSf inal = IDSnew e q
kt VGS Von Xn

(42)

Yang-Chatterjee charge model This model ensures continuity of the charges and capacitances throughout dierent regions of operation. The intermediate quantities are: VF B = Vto GAMMA PHI PHI and Co = Cox Wef f Lef f Accumulation region VGS VF B + VBS Qd Qs Qb = 0 = 0 = Co (VGS VF B VBS ) (45) (46) (47) (44) (43)

Cut-o region VF B + VBS < VGS Vth Qd Qs Qb = 0 = 0 = Co GAMMA {1 + 2

2

(48) (49) 1+ 4 4 (VGS VF B VBS ) } GAMMA2 (50)

Saturation region Vth < VGS VDS + Vth Qd Qs Qb Linear region VGS > VDS + Vth Qd Qs Qb = = = Co [ Co [ 8 (VGS
2 VDS Vth VDS 2 )

= = =

0 2 Co (VGS Vth ) 3 Co (VF B PHI Vth )

(51) (52) (53)

3 VGS Vth VDS ] 2 4 VGS Vth 1 + VDS ] 2 4

(54) (55) (56)

2 VDS 24 (VGS Vth Co (VF B PHI Vth )

VDS 2 )

The nal currents at the transistor nodes are given by Id Ig Is = IDSf inal + = dQg dt dQs dt dQd dt (57) (58) (59)

= IDSf inal +

DC Characteristics 0.0008 4.5

Transient analysis Output

0.0007

4 3.5 3

0.0006

0.0005 Vds (V) Vd (V) 2.5 2 1.5 0.0002 1 0.5 0 0 0.5 1 1.5 2 2.5 Ids (A) 3 3.5 4 4.5 5 0 1e-09 2e-09 3e-09 4e-09 5e-09 Time (s) 6e-09 7e-09 8e-09 9e-09 1e-08

0.0004

0.0003

0.0001

(a) Figure 2: Analysis results. Notes: This is the M element in the SPICE compatible netlist. Version: 2002.08.01 Credits: Name Nikhil Kriplani nmkripla@unity.ncsu.edu Aliation NC State University Date August 2002 Links

(b)

www.ncsu.edu