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EMOSFET-Enhancement MOSFET

Although DE-MOSFET is useful in special applications, it does not enjoy widespread

use. However, it played an important role in history because it was part of the evolution
towards the E-mode MOSFET, a device that has revolutionized the electronic industry.
E-MOSFET has become enormously important, in digital electronics and. In the absence
of E-MOSFET’s the personal computers (PCs) that are now so widespread would not
exist.

Construction of an EMOSFET:

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Construction of EMOSFET

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Figure shows the construction of an N-channel E-MOSFET. The main difference between
the construction of DE-MOSFET and that of E-MOSFET, as we see from the gures given
below the E-MOSFET substrate extends all the way to the silicon dioxide (SiO2) and no
channels are doped between the source and the drain. Channels are electrically induced
in these MOSFETs, when a positive gate-source voltage VGS is applied to it.

Operation of an EMOSFET:

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Working of an EMOSFET

As its name indicates, this MOSFET operates only in the enhancement mode and has no
depletion mode. It operates with large positive gate voltage only. It does not conduct
when the gate-source voltage VGS = 0. This is the reason that it is called normally-off
MOSFET. In these MOSFET’s drain current ID flows only when VGS exceeds VGST [gate-
to-source threshold voltage].

When drain is applied with positive voltage with respect to source and no potential is
applied to the gate two N-regions and one P-substrate from two P-N junctions
connected back to back with a resistance of the P-substrate. So a very small drain
current that is, reverse leakage current flows. If the P-type substrate is now connected
to the source terminal, there is zero voltage across the source substrate junction, and
the–drain-substrate junction remains reverse biased.

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When the gate is made positive with respect to the source and the substrate, negative
(i.e. minority) charge carriers within the substrate are attracted to the positive gate and
accumulate close to the-surface of the substrate. As the gate voltage is increased, more
and more electrons accumulate under the gate. Since these electrons can not flow
across the insulated layer of silicon dioxide to the gate, so they accumulate at the
surface of the substrate just below the gate. These accumulated minority charge
carriers N -type channel stretching from drain to source. When this occurs, a channel is
induced by forming what is termed an inversion layer (N-type). Now a drain current
start flowing. The strength of the drain current depends upon the channel resistance
which, in turn, depends upon the number of charge carriers attracted to the positive
gate. Thus drain current is controlled by the gate potential.

Since the conductivity of the channel is enhanced by the positive bias on the gate so this
device is also called the enhancement MOSFET or E- MOSFET.

The minimum value of gate-to-source voltage VGS that is required to form the inversion
layer (N-type) is termed the gate-to-source threshold voltage VGST. For VGS below VGST,
the drain current ID = 0. But for VGS exceeding VGST an N-type inversion layer connects

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the source to drain and the drain current ID is large. Depending upon the device being x
used, VGST may vary from less than 1 V to more than 5 V.

JFETs and DE-MOSFETs are classi ed as the depletion-mode devices because their
conductivity depends on the action of depletion layers. E-MOSFET is classi ed as an
enhancement-mode device because its conductivity depends on the action of the
inversion layer. Depletion-mode devices are normally ON when the gate-source voltage
VGS = 0, whereas the enhancement-mode devices are normally OFF when VGS = 0.

Characteristics of an EMOSFET.

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Drain Characteristics-EMOSFET

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Drain characteristics of an N-channel E-MOSFET are shown in gure. The lowest curve is
the VGST curve. When VGS is lesser than VGST, ID is approximately zero. When VGS is
greater than VGST, the device turns- on and the drain current ID is controlled by the gate
voltage. The characteristic curves have almost vertical and almost horizontal parts. The
almost vertical components of the curves correspond to the ohmic region, and the
horizontal components correspond to the constant current region. Thus E-MOSFET can
be operated in either of these regions i.e. it can be used as a variable-voltage resistor
(WR) or as a constant current source.

EMOSFET-Transfer Characteristics

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Figure shows a typical transconductance curve. The current IDSS at VGS <=0 is very x
small, being of the order of a few nano-amperes. When the VGS is made positive, the
drain current ID increases slowly at rst, and then much more rapidly with an increase in
VGS. The manufacturer sometimes indicates the gate-source threshold voltage VGST at
which the drain current ID attains some de ned small value, say 10 u A. A current ID (0N,
corresponding approximately to the maximum value given on the drain characteristics
and the values of VGS required to give this current VGs QN are also usually given on the
manufacturers data sheet.

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The equation for the transfer characteristic does not obey equation. However it does
follow a similar “square law type” of relationship. The equation for the transfer
characteristic of E-MOSFETs is given as:

ID=K(VGS-VGST)2

Schematic Symbols of EMOSFET.

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EMOSFET-Schematic symbols

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Schematic symbols for an N-channel E-MOSFET are shown in gure. For zero value of
VGS, the E-MOSFET is OFF because there is no conducting channel between source and
drain. Each of schematic symbols shown in gures, has broken channel line to indicate
this normally OFF condition. As we know that for VGS exceeding the threshold voltage
VGST, an N-type inversion layer, connecting the source to drain, is created. In each of the
schematic symbols, the arrow points to this inversion layer, which acts like an N-
channel when the device is conducting. In each case, the fact that the device has an
insulated gate is indicated by the gate not making direct contact with the channel. The
schematic symbol shown in gure shows the source and substrate internally connected,
while the other symbol shown in gure shows the substrate connection brought out
separately from the source.

The schematic symbols for a P-channel E-MOSFET are also shown. In these cases the
arrow points outwards.

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