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MOSFET
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MOSFET

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is

capable of voltage gain and signal power gain.

The MOSFET is the core of integrated circuit designed as thousands of these

can be fabricated in a single chip because of its very small size.

Widely used for switching and amplifying electronic signals in the electronic
devices.

The MOSFET is a three terminal device such as source, gate, and drain. Two
types
1) Enhancement MOSFET.
2) Depletion MOSFET.
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Construction:
Enhancement MOSFET (E - MOSFET)
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Enhancement MOSFET (E - MOSFET)

 The E-MOSFET operates only in the enhancement mode

and has no depletion mode.
 The substrate extends completely to the SiO2 layer.
FY - Department of Engineering, Sciences and Humanities E – MOSFET…
FY - Department of Engineering, Sciences and Humanities
E – MOSFET…
 E – MOSFET

 For an n-channel device, a positive gate voltage above a

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threshold value induces a channel by creating a thin layer

of negative charges in the substrate region adjacent to the
SiO2 layer.
 The conductivity of the channel is enhanced by increasing
the gate-to-source voltage and thus pulling more
electrons into the channel area.
 For any gate voltage below the threshold value, there is no
channel.
 E–MOSFET characteristics

 The E-MOSFET uses only channel enhancement.

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n-channel device requires a positive gate-to-source voltage, and a p-

channel device requires a negative gate-to-source voltage.
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Construction:
Depletion MOSFET(D–MOSFET )
 Depletion MOSFET(D–MOSFET )
 The drain and source are diffused into the substrate material and then
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connected by a narrow channel adjacent to the insulated gate.

 Both n-channel and p-channel devices are shown in the figure.
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Biasing..
D-MOSFET…
FY - Department of Engineering, Sciences and Humanities D–MOSFET…

 The D-MOSFET can be operated in either of two modes, the

depletion mode or the enhancement mode, and is sometimes

called a depletion/enhancement MOSFET.
Since the gate is insulated from the channel, either a
positive or a negative gate voltage can be applied.
The n-channel MOSFET operates in the depletion mode
when a negative gate-to-source voltage is applied and in the
enhancement mode when a positive gate-to-source voltage is
applied.
These devices are generally operated in the depletion mode.
 D–MOSFET characteristics

D-MOSFET can operate with either positive or negative gate

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voltages.
 MOSFET Operation

Structure & Cross sectional View

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OFF State:
• p-n- junction
is reverse-
biased

• off-state
voltage
appears across
n- region
 MOSFET Operation
ON State:
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• p-n- junction is
slightly reverse
biased
• positive gate
voltage
induces
conducting
channel
• drain current
flows through
n- region and
conducting
channel
• on resistance = total
resistances of n-
region, conducting
channel,source and
drain contacts, etc.
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Static Characteristics of Power MOSFET
 Features and applications of power MOSFET

Voltage-driven device, simple drive circuit Majority-

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carrier device, fast switching speed, high operating

frequency (could be hundreds of kHz)
Majority-carrier device, better thermal stability
On-resistance increases rapidly with rated blocking voltage
o Usually used at voltages less than 500V and power
less than 10kW
o 1000V devices are available, but are useful only at
low power levels(100W)
Part number is selected on the basis of on-
resistance rather than current rating
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The body diode of power MOSFET
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MOSFET equivalent Circuit
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Typical application ckt
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IGBT
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Insulated Gate Bipolar Junction Transistor
A Hybrid of MOSFET and BJT
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Insulated Gate Bipolar Junction Transistor
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IGBT: Symbol
FY - Department of Engineering, Sciences and Humanities Static Characteristics
 Properties
 Becoming the device of choice in 500 to 1700V+
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applications, at power levels of 1-1000kW

Positive temperature coefficient at high current —easy
to parallel and construct modules
Forward voltage drop: diode in series with on-
resistance 2- 4 V typical
Easy to drive —similar to MOSFET
Slower than MOSFET, but faster than Darlington, GTO,
SCR
Typical switching frequencies: 3-30kHz
IGBT technology is rapidly advancing:
 3300 V devices: HVIGBTs
 150 kHz switching frequencies in 600 V devices
 Typical Application
 Induction Heater
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BLDC / AC motor drives

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