Reviews of Transistor Devices

Bipolar Junction Transistor (BJT) Devices

Field Effect Transistor (FET) Devices
Review on Bipolar Junction Transistor (BJT) Devices
Review on Bipolar Junction Transistor (BJT) Devices
Bipolar Transistor Construction
Review on Field Effect Transistor (FET) Devices
Review on Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
JFET Modes of Operation
Common Source (CS) Configuration
• Most common modes of operation
• High input impedance
• High voltage gain
• Used in audio frequency amplifier
• Output signal 180o “out-of-phase” with the input
JFET Modes of Operation
Common Gate (CG) Configuration
• Input terminal: Source
• Output terminal: Drain
• Low input impedance
• High output impedance
• Used in high frequency and in impedance matching circuits
• Output signal 0o “In-phase” with the input
JFET Modes of Operation
Common Drain (CD) Configuration
• Input terminal: Gate
• Output terminal: Source
• High input impedance
• Low output impedance
• Near-unity voltage gain
• Used in buffer amplifiers, also called source follower
• Output signal 0o “In-phase” with the input
Field Effect Transistor (FET) Biasing
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices

=Idss
-Idss
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices
Field Effect Transistor (FET) Devices

Transfer Characteristic curve and Drain curve for Common source JFET Amplifier
Field Effect Transistor (FET) Devices

IDSS = 5mA
Vp = -5V
MOSFET
• MOSFET stands for Metal Oxide Semiconductor
Field Effect Transistor.
• It is a type of Field Effect Transistor and it is a
voltage-controlled device.
• It is also called an Insulated Gate Field Effect
Transistor (IGFET).
• It is used for switching or amplifying electronic
signals in electronic devices.
• It is the most commonly used transistor and it can
be used in both analog and digital circuits.
 Difference between JFET and MOSFET
Parameter JFET
JFET stands for Junction Field Effect
Full form
Transistor.
JFET is a three terminal device, where
Terminals the terminals are named – Source (S),
Drain (D) and Gate (G).
Mode of operation JFET operates only in depletion mode.
JFET has a gate terminal which is not
Gate terminal
insulated from the channel.
JFET has a continuous channel. The
Channel
channel exists permanently.
MOSFET
MOSFET stands for Metal Oxide
Semiconductor Field Effect Transistor.
MOSFET is also a four terminal device,
where the terminals are – Source (S), Drain
(D), Gate (G) and Body or Substrate (B).
MOSFET can be operated in both
enhancement mode and depletion mode.
The gate terminal of the MOSFET is
insulated from thin layer of metal-oxide.
MOSFET has a continuous channel only in
the depletion type, but not in the
enhancement type. Thus, the channel exists
permanently in depletion type, but not in
enhancement type.
 Difference between JFET and MOSFET
Parameter JFET MOSFET
MOSFETs are of four types: P-channel
enhancement MOSFET, P-channel
JFETs are of two type: N-channel JFET
Types depletion MOSFET, N-channel
and P-channel JFET.
enhancement MOSFET and N-channel
depletion MOSFET.
JFET has a high input impedance which is MOSFET has very high input impedance of
Input impedance
of the order of 109 ΩΩ. the order of 1014 ΩΩ.
MOSFET is more susceptible to damage
JFET is less susceptible to damage as it
Susceptible to damage because the presence of metal oxide
has high input capacitance.
reduces input capacitance.
The manufacturing process of JFET is
Manufacturing process Manufacturing of MOSFET is complex.
simple and less sophisticated.
The drain resistance of JFET is high and The drain resistance of MOSFET is low of
Drain resistance
ranges from 105 Ω to 106 Ω. the order of 1 Ω to 50 Ω.
 Difference between JFET and MOSFET
Parameter JFET
The manufacturing cost of a JFET is less
Manufacturing cost
than MOSFET.
In JFET, the Gate terminal is connected
directly to the channel, and the voltage
Gate terminal
applied to the Gate terminal controls the
current flow.
Characteristics curve JFET has more flat characteristics curve.
In JFET, the conductivity of the device is
Conductivity control controlled by the reverse biasing of the
gate.
Signal handling capacity The signal capacity of the JFET is less.
MOSFET
The addition of metal oxide increases the
manufacturing cost of MOSFET. Thus,
MOSFET is expensive than JFET.
In MOSFET, the Gate terminal is isolated
from the channel, and the voltage applied
to the Gate terminal controls the current
flow, which creates an electric field across
the oxide layer.
MOSFET has relatively less flat
characteristics curve.
In MOSFET, the conductivity is controlled
by the charge carriers induced in the
channel.
MOSFET has more signal handling capacity
than JFET.
D-MOSFET
Depletion Mode - Metal Oxide Semiconductor
Field Effect Transistor
N-Channel D-MOSFET Construction
N-Channel D-MOSFET Construction
Drain and Transfer Characteristics for n-channel D-MOSFET

Transfer Characteristics Curve Drain Characteristics Curve

P-Channel D-MOSFET Construction
E-MOSFET
Enhancement Mode - Metal Oxide
Semiconductor Field Effect Transistor
N-Channel E-MOSFET Construction
N-channel E-MOSFET I-V Characteristics

With a fixed VDS drain-source voltage connected across the EMOSFET,

we can plot the values of drain current, ID with varying values of VGS to
obtain a graph of the MOSFET’s forward DC characteristics. These
characteristics give the transconductance, gm of the transistor.