Results in Physics 54 (2023) 107140

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Results in Physics
journal homepage: www.elsevier.com/locate/rinp

Electron transport in a stressed moiré bigraphene structure

Daulet Sergeyev a, b, *, Ainur Duisenova b, Andrei Solovjov c, Narmin Ismayilova d, e
a
T. Begeldinov Aktobe Aviation Institute, Kazakhstan
b
K. Zhubanov Aktobe Regional University, Kazakhstan
c
B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine, Kharkiv, Ukraine
d
Institute of Physics, Ministry of Science and Education, Baku, Azerbaijan
e
Western Caspian University Baku, Baku, Azerbaijan

A R T I C L E I N F O A B S T R A C T

Keywords Within the framework of density functional theory in combination with the method of nonequilibrium Green’s
Bilayer graphene functions, the transport characteristics (band structure, transmission spectrum, current–voltage characteristic,
Moiré structure and differential conductivity) of unstressed, stressed, and strongly stressed moiré bigraphene nanodevices with
Current–voltage characterization, differential
interlayer distances of 3.4 Å, 2.85 Å, and 1.7 Å, respectively, and consisting of two layers of graphene, where one
conductivity
of the layers is connected to electrodes (active graphene) and the other layer is electrically neutral (passive
graphene) have been determined. It is established that, when passive graphene is twisted to certain angles before
the moiré pattern is obtained (~4◦ and ~ 12◦ ), the energy gap is opened, the value of range 1.66–1.82 eV and
3.78–4.69 eV in the unstressed state (in the stressed state 2.27–2.67 eV and 4.28–4.93 eV), respectively. It is
shown that the transmission spectrum of bilayer graphene has features in the form of peak structures; with
decreasing intergraphene distance these structures begin to blur and their quasiperiodic behavior is partially
broken. The current–voltage characteristic of such nanostructures has areas with negative differential conduc­
tivity. Such nonlinear behavior of transport characteristics of bigraphene moiré structures can be used for the
construction of electronic components of nanoelectronics on their basis.

Introduction on the surface of another 2D material, for example, on the surface of

It is well-known that graphite represents a stack of graphene sheets
connected to each other by weak van der Waals (vdW) forces [1–3]. The
mechanical splitting of graphite and the obtaining a single layer of
graphene (graphite monolayer) led to the discovery of other two-
dimensional graphene-like materials [4–6]. It was found out that the
role of the vdW force becomes significant in the transition from 3D
layered material to distinct 2D layers. Theoretically, the properties of
graphene have been studied in sufficient detail, where its unique elec­
trophysical properties have been revealed (see, for example, [7–9]).
However, one of the disadvantages of pure graphene is the absence of a
bandgap, i.e., graphene is a gapless semiconductor with a linear energy
spectrum [10]. Due to the absence of an energy gap in the energy
spectrum of carriers, the use of graphene for the realization of electronic
components based on it is strongly limited. Different ways of opening the
energy gap have been found to use graphene as an electronic material
[11–13]. One of the ways to open the gap is the deposition of graphene
hexagonal boron nitride [14]. Such properties as stiffness in plane and
bulk module have been studied using energy-strain correlation, for
example in [15] the results showed very competitive stiffness and bulk
modulus values of two-dimensional graphene and boron nitride deco­
rated with platinum. In work [16] it is shown that vdW heterostructures
formed by boron nitride nanoribbons with zigzag edges and graphene
nanoribbons with zigzag edges represent semiconductors with spin
splitting. In the work [17], it has been shown that the chemical ab­
sorption of lactan on the surface of ψ-graphene occurs, and its energy is
four times higher than the absorption energy in graphene. Therefore,
ψ-graphene can be an excellent absorbent for lactate molecules. Mean­
while, oxygen molecules can significantly affect the electronic proper­
ties of penta-graphene in the adsorption case, whereas hydrogen
molecule has no effect [18]. There is a way to open a slot in bilayer
graphene (“bigraphene”) due to the influence of electric field [19]. It
was also found that in bigraphene when the layers are twisted to a
certain (magic) angle Θ superlattice with moiré patterns is created, and

* Corresponding author.
E-mail addresses: serdau82@gmail.com (D. Sergeyev), ainura_duisenova@mail.ru (A. Duisenova), solovjov@ilt.kharkov.ua (A. Solovjov), ismayilova_narmin_84@
mail.ru (N. Ismayilova).

https://doi.org/10.1016/j.rinp.2023.107140
Received 31 July 2023; Received in revised form 17 October 2023; Accepted 29 October 2023
Available online 2 November 2023
2211-3797/© 2023 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-
nc-nd/4.0/).
D. Sergeyev et al.
the translation period of which depends on Θ [20]. The electronic
properties of such moiré patterned bigraphene structures are signifi­
cantly different from graphene [21–23]. The effect of bias in moiré
tunnel junctions, can better account for the superposition of periods and
the corresponding coherence in moiré tunnel junctions. Physically, the
attenuation of the peak intensity is due to the displacement disruption of
the periodicity of the potential. It was found that as the barrier thickness
increases, the peak intensity will decrease significantly and be more
significantly suppressed by the bias [24].
It was shown in [25], that in two-layer graphene twisted at a small
angle, assembled from discrete monocrystals of graphene as grown by
the chemical vapor deposition (CVD) method can provide high-quality
transport properties determined by the moiré potential. It has been
established that in the small twist angles (less than 4◦ ) the interlayer
bonding energy changes monotonically, without local minimum energy
and stable structural states [26]. In papers [27–29] it has been shown
that a nanostructure consisting of two layers of graphene stacked on
each other at a special angle has revealed superconductivity because of
the maximum density of states at the energy of the flat band, and also
distinct degeneracies of the Landau level are observed. In [30] it was
found that the current in ϒ-graphene nanotubes is very negligible at low
bias voltages, but increases sharply at voltages above a threshold
voltage, also [31] showed that the rectification behavior of γ-graphene
nanotubes is mainly due to the asymmetric distribution of the electron
transmission function in the conduction band and valence band.
It is known that in the interaction of carbon atoms located in various
graphene-like systems, the main role is played by the long-range
attractive vdW interaction (the main contribution to which is made by
the dispersion interaction). Usually, the classical Lennard-Jones poten­
tial is used to describe such an interaction between graphene films in the
equilibrium state:
(( ) ) structures will be further referred to as stressed and strongly stressed,
σ 12 (σ)6
U(r) = 4ε − respectively. It is known that carbon atoms in graphene are bound by
r r
where ε varies from 2.96 meV to 4.66 meV, and σ is equal to 3.4 Å. Note
that the model of Kolmogorov-Crespi et al. is also used to estimate the
interlayer interaction [32].
In [33–35] (experimentally and using ab initio calculations), it was
shown that the attracting vdW interaction is not the only one in the
systems under consideration, and the repulsive interaction due to the
overlap of electronic orbitals between weakly interacting subsystems
also makes a noticeable contribution to the bonding energy of graphene
layers. Currently, the properties of nanomaterials are intensively studied
under extreme conditions (under the influence of high pressure, high
temperature, and others). Sometimes, such conditions radically change
the properties of materials. For example, superconductivity is observed
in hydrides under high pressure [36]. Sometimes, such conditions
radically change the properties of materials. For example, in hydrides
superconductivity observed under high pressure [37–39] changes in the
stoichiometry of sodium chloride (at a pressure above 20 GPa) [40]. In
[41,42], diamond and virtual indentors were used to determine the
mechanical properties of graphite, as well as to study the formation of
interlayer sp3 bonds at high pressures. The use of electrostatic forces was
proposed for graphite deformation.
Thus, a feature of graphene films is the presence of interactions with
different scales of spatial action: vdW interactions between graphene
layers, and also a very strong covalent interaction between carbon atoms
in graphene. Let us assume that under high pressure it is possible to
approximate graphene films to strong short-range bonds which radius of
action is of the order of 0.15–0.2 nm. In this case, how will such a
nanosystem behave? This work is devoted to revealing the transport
properties of such strained bigraphene nanosystems. To the transport
properties of such stressed bigraphene nanosystems, this work is
devoted. The considered moiré bigraphene nanodevices consist of two
layers of graphene, where the lower graphene layer is established
2
Results in Physics 54 (2023) 107140
electrical contact with the electrodes, and the surface layer is connected
with the lower layer by vdW forces and remains electrically neutral
(Fig. 1).
The geometry of the structure
The geometry of the considered nanodevices presents a structure
consisting of two layers of graphene, where one graphene layer (active
layer) is directly connected to the electrodes and the other free graphene
(passive layer) is located on the surface of the active layer and connected
with it by vdW forces (Fig. 1 a). Other nanodevices are obtained by
twisting the passive graphene layer by ~ 4.039◦ and ~ 12.117◦ until
getting a clear moiré interference pattern arising from the superposition
of the two lattice structures (Fig. 1 b, c). (In the following, for ease of
description, we will show the angles of twisting as ~ 4◦ and ~ 12◦ ,
respectively.) When the layers are displaced, periodically arranged re­
gions with different packing types (AA- and AB-packing) appear in the
bigraphene structure. In Fig. 1, the AA-packing region is marked green.
Typically, the distance between graphene layers in graphite is ~ 3.4 Å
and is supported by weak vdW bonding. Within the framework of this
work such a bigraphene structure (where the distance between the
layers is ~ 3.4 Å) is called an unstressed structure. Under the influence
of various external forces this distance can be changed. This is possible
both due to mechanical influence and electrostatic influence [41,42].
Note that under strong pressure the electrical properties of materials
change dramatically.
The decrease in the intergraphene distance in such nanodevices
should noticeably effect on their electrical transport properties. To
reveal this type of deformation on the properties of the nanostructure,
we have considered a nanostructure with an intergraphene distance of
~ 2.85 Å and ~ 1.7 Å (Fig. 1 a, b, c, bottom fragment). Such nano­
very strong short-acting covalent bonds, which radius of action is about
1.5–2 Å [43]. In this paper, graphene layers with a distance of 1.7 A are
selected as a strongly stressed system, where carbon atoms of different
layers are connected by a covalent bond. The existence of such a system
is possible under high pressure.
The investigated nanostructure consists of 1800 atoms and has three
regions with a total size of 73.86 Å: the central, left and right electrode
regions. The central region includes the active part of the nanodevice in
the form of a twisted bigraphene, where quasiparticle scattering take
place in a region with a size of ~ 59.06 × 41.2 Å. The length of the
passive layer is 34.454 Å. The electrodes of the device are obtained by
broadening the main region along the C axis by ~ 7.4 Å.
The distance between the graphene ribbon and the repeating ribbons
in the side cells is chosen to be 15 Å to avoid errors associated with the
“edge” effect of periodic coupling.
The method of calculation
The optimization of the geometry of bigraphene nanodevices and the
description of the interatomic interaction was carried out within the
framework of density functional theory (DFT), the generalized gradient
approximation GGA-PBE [44] was used as the exchange–correlation
functional, which allows the most accurate description of such struc­
tures. During the optimisation of the nanostructures, the atomic
configuration parameters were relaxed until the forces on all atoms of
the molecule became less than a given threshold value of 0.05 eV/Å.
The computer modelling of electrical characteristics of bigraphene
nanodevices was performed within the framework of the Hückel method
combined with the method of non-equilibrium Green’s Functions
(NEGF) [45,46]. Modelling of the electrotransport properties of the
nanojunction was implemented in Atomistix ToolKit with Virtual
NanoLab [47]. (The main equations of this method are described in
detail in our previous works [48–50]). For the calculation of the
D. Sergeyev et al. Results in Physics 54 (2023) 107140

Fig. 1. Geometry of the investigated moiré bigraphene structure: (a) bigraphene structure without twist; (b) 4◦ twisted; (c) 12◦ twisted. The stressed bigraphene
structure is shown at the bottom, where the distance between graphene planes is reduced from 3.5 Å to 2.85 Å and 1.7 Å, respectively. (The contours of the moiré
patterns obtained by twisting are highlighted in green (AA-packing).). (For interpretation of the references to colour in this figure legend, the reader is referred to the
web version of this article.)

3
D. Sergeyev et al. Results in Physics 54 (2023) 107140

current–voltage characteristic (CVC) and differential conductivity, band integration with k-point sampling (3, 3, 100). For the band dia­
firstly, the transmission spectrum (function) T(ε) of the considered gram k-point is equal to (25, 25, 1). For the calculations we used a grid
bigraphene nanodevice was determined: with a cut-off energy equal to 75 Hartree. For the solution of this
[ ] [ ] problem, the self-consistent field criterion was made to be 10-6 eV/atom.
T(ε) = tr ΓL GΓR G† = tr ΓR GΓL G† (1)
The calculations were performed in a Supermicro server computer with
the following parameters: Intel(R) Xeon(R) Silver processor, 512 GB
where ΓL(R) (ε) is the broadening matrix (broadening function) of the left RAM, number of cores 64.
(right) electrode, G(ε),G† (ε) are the delayed and leading Green’s func­
tions, ε is the energy. The CVC of the nanostructure is calculated on the The results and discussion
basis of the Landauer equation, which determines the dependence of the
electric current on the transmission spectrum: To identify the bigraphene structures, its band structure was calcu­
∫
2e +∞
[ (
ε − μR
) (
ε − μL
)] lated (Fig. 2). As can be seen from Fig. 2, the features of the band
I(VL , VR , TL , TR ) = T(ε) f − f dε (2) structure of the k-point at the Fermi level in the strained bilayer gra­
h −∞ kB T R kB TL
phene system are preserved. Further reduction of the distance between
where e is electron charge, h is Planck’s constant, f(ε) is the Fermi en­ graphene layers (up to ~ 1.7 Å) will lead to a radical change of the band
ergy distribution function of quasiparticles, kB is Boltzmann’s constant, structure (Fig. 2, third column). We suppose that this is due to the
TL , TR are the current temperatures and μR , μL are the electrochemical change of the bonding between the carbon atoms of passive and active
potentials of the right and left electrodes. graphene from vdW to covalent.
The differential conductivity of the nanostructure was obtained by The occurrence of AA- and AB-packing during layer displacement in
calculation of the self-consistent current at the series of applied bias and the bigraphene structure leads to a change in the energy and transport
performing the numerical differentiation. characteristics. Such a change is also observed in the band diagram of
( 1 ) ( 2 ) such objects. As can be seen, the features of the k-point of the band di­
σ (Vbias , TL , TR ) =
I Vbias , TL , TR − I Vbias , TL , TR
(3) agram when passive graphene is twisted to certain angles (~4◦ and ~
12◦ ) for the stressed moiré system are preserved, while the band dia­
1 2
Vbias − Vbias
gram of the strongly stressed system is radically different from the
The calculations were performed using a Poisson solver and Brillouin

Fig. 2. Band structure of unstressed (first column), stressed (second column), and strongly stressed (third column) moiré bigraphene structures: (a) without twist; (b)
4◦ twisted; (c) 12◦ twisted.

4
D. Sergeyev et al.
previous systems.
In [51], based on the analysis of band diagrams of moiré bigraphene
structures, it is revealed that in such systems the Fermi velocity near the
Dirac point is renormalized. With the increase of the disorientation
angle Θ it may be considered the decrease in the Fermi velocity (see e.g.
[52]). This effect is explained by the emergence of flat band due to the
formation of strongly localized states in the AA-packing region.
From the band diagram, we can see that at moiré angles the energy
gap opens up. Usually, using this gap, the parameter Δ2 is estimated for
determining the transport characteristics by semiempirical methods
(inset of Fig. 2 b). We have determined the magnitude of this energy gap
of unstressed and stressed moiré structures with different methods (see
Table 1). As can be seen, the value of the gap of the unstressed moiré
structure at Θ = 4◦ (Θ = 12◦ ) varies from 1.66 eV to 1.82 eV (3.78 eV to
4.69 eV), while that of the stressed moiré structure varies from 2.27 eV
to 2.67 eV (4.28 eV to 4.93 eV) at Θ = 4◦ (Θ = 12◦ ).
The evolution of the transmission spectrum of unstressed, stressed,
and strongly stressed bigraphene structures with different disorientation
angles is shown in Fig. 3 a, b, c. The dependence of the transmittance
function on the energy of single-layer graphene has a traditional step-
like shape, and in the case of placing a passive layer of graphene on
its surface, the transmittance spectrum acquires a peak structure and the
transport of quasiparticles through such a system decreases by an order
of magnitude.
The peak structures of bilayer graphene resemble the Landau levels
in the density of states (DOS) of graphene [53,54]. This is consistent,
since DOS and T(ε) are directly proportional T(ε) = D(ε − U)2πγ1 γ2 /γ
(here U- self-consistent potential, γ- Luttinger parameter). The peak
structures of the spectrum of unstressed graphene occur at the following
quasi-periodic energy values: − 1.9 eV, − 1.7 eV, − 0.9 eV, − 0.6 eV,
− 0.14 eV, 0 eV, 0.22 eV, 0.79 eV, 1.1 eV, 1.57 eV, 1.83 eV. When the
graphene distance is reduced by 2.85 Å, the peak structures start to blur,
and a partial violation of their quasi-periodicity is also observed. How­
ever, we observe that the passage of quasiparticles through such struc­
ture improves at Θ = 0◦ and 4◦ .
In the strongly stressed state of the considered system the trans­
mission spectrum is suppressed by an order of magnitude. At “moiré”
twists of the passive graphene layer, the values of the transmission
function still decrease, which shows the weak electrotransport proper­
ties of the system.
A comparison of the transmission spectra of passivated hydrogen
atom and non-passivated single-layer graphene is shown in Fig. 3 d. As
can be seen, the spectrum of graphene not passivated by hydrogen atoms
is shifted by ~ 0.56 eV with respect to the spectrum of the passivated
graphene. (Therefore, for further calculation of the electrotransport
characteristics, we will choose graphene structures passivated by
hydrogen atoms).
Figs. 4, 5, 6 show the results of the calculated CVC (a) and differential
conductance (b) of the unstressed, stressed, and strongly stressed moiré
structures with different disorientation angles. (The CVC and differential
conductance of the considered nanoobjects are calculated based on
equations (2), (3).)
As can be seen from Fig. 5, the CVC of the unstressed bigraphene
structure without twist (Θ = 0◦ ) resembles the CVC of a two-terminal
Table 1
The value of the energy gap calculated by different methods.
DFT- DFT- DFT- Hückel
LDA GGA mGGA method
Unstressed structure at Θ = 1.657 1.654 eV 1.756 eV 1.82 eV
4◦ eV
Unstressed structure at Θ = 3.775 3.827 eV 4.18 eV 4.69 eV
12◦ eV
Stressed structure at Θ = 4◦ 2.45 eV 2.44 eV 2.63 eV 2.27 eV
Stressed structure at Θ = 4.28 eV 4.284 eV 4.73 eV 4.928 eV
12◦
5
Results in Physics 54 (2023) 107140
switching device [55], where in the voltage interval of − 0.7 ÷ 0.7 V
there is no current flowing through the structure (OFF-mode), and
beyond this interval there is a quasi-monotonic increase in current up to
90 μA (ON-mode). The dI/dV spectrum of the structure resembles the
dynamic conduction spectrum of tunneling objects, with pronounced
symmetric two peaks at − 1.52 V and 1.52 V, respectively, as well as
features in the form of dips at − 2.1 V and 2.1 V, respectively. Note that
no negative differential conductance (NDC) is observed in the charac­
teristics of this structure [56].
At the angle of twist of passive graphene Θ = 4◦ , a significant change
in the electrical characteristics of the nanosystem is observed:
completely disappears the cutoff mode (OFF-mode) in the range of bias
voltage from 0 V to 1.1 V, a moderate increase in the current up to ~ 10
μA, then a sharp increase in the current up to ~ 185 μA, the appearance
of a weak area of NDC. The following changes appear on the dI/dV
spectrum of the nanostructure: at the voltage of − 2.1 V and 2.1 V, the
features observed at Θ = 0◦ in the form of dips are transformed into a
peak structure with a magnitudes of 130 μS and 135 μS, respectively; at
the bias voltage of − 0.76 V and 0.71 V, the spectrum features appear in
the form of dips, and a peak feature with a magnitude of 4 μS appears at
− 0.1 V; the NDC of − 1 μS appears at − 0.76 V. The appearance of an
additional peak at zero voltage resembles the tunneling spectrum of
superconducting transitions. [57,58].
Further increase of the “moiré” angle up to Θ = 12◦ will lead to the
following changes in the characteristics of the nanosystem: in the range
of bias voltage from 1.35 V to 3 V a linear growth of current up to ~ 220
μA is observed; in the range of 0.4 ÷ 1.3 V, the CVC takes an N-shaped
form, forming a section of the NDC (see the inset of Fig. 4); the NDC − 1.8
μS at − 0.71 V and 0.8 V appears.
The electrical characteristics of the stressed bigraphene structure
have some differences from the unstressed structure (Fig. 5). Let us
consider the case when Θ = 0◦ . The current grows according to a
parabolic law up to 180 μA. On the spectrum of dynamic conductivity at
− 2.2 V and 2.2 V, features in the form of a maximum (140 μS) are
observed, in the interval 1 ÷ 1.4 V (similarly at − 1.4 ÷ -1 V), features of
the spectrum in the form of a bend appear. At the angle of twist Θ = 4◦ , a
slight deviation from the previous state occurs. The dI/dV spectrum at
− 7.5 V and 7.8 V shows features in the form of a dip and at zero voltage a
feature in the form of a maximum (40 μS). Changing the angle of twist to
Θ = 12◦ , those features in the case of the unstressed state of the film are
practically preserved. The dI/dV spectrum becomes asymmetric. The
− 15 μS of dI/dV spectrum appears only at a positive voltage of 0.8 V, and
at a negative voltage the dI/dV spectrum is suppressed.
A significant change in the electrical characteristics occurs when the
distance between the graphene is strongly reduced to the level of co­
valent bonding (Fig. 6). The nonlinearity of the CVC is still preserved,
and it becomes quasi-linear at moiré angles of 4◦ , 12◦ . The dynamic
conductivity spectrum (Θ = 0◦ ) retains a symmetric shape and has
features in the form of a weakly expressed peak at − 1.1 V and 1 V and a
dip at zero bias voltage, while at angles of 4◦ , 12◦ the symmetry of the
spectrum is strongly broken and it presents a quasi-chaotic change in
conductivity from 10 μS to 52 μS. In such nanosystems, NDC does not
appear.
The results of calculations of CVC of unstressed bigraphene struc­
tures qualitatively consistent with experimental [59] and theoretical
results [60,61], where the change of moiré angle Θ = 1.2◦ , 0.88◦ was
taken into account by renormalization of the Fermi velocity, and the
influence of superperiod with parameter of the order of several nano­
meters was taken into account by modulating the height of barriers
(barrier height 0.2 eV, band width 0.142 nm, delta parameter 0.02 eV).
The occurrence of NDC makes the considered structures attractive to be
used as elements of nanogenerators. Nonlinear behavior of transport
characteristics of bigraphene moiré structures has potential application
for construction of nanoelectronics electronic devices on their basis.
As can be seen from the calculations, the dI/dV-spectrum of bigra­
phene nanosystem at Θ = 4◦ , 12◦ at zero bias voltage has an additional
D. Sergeyev et al. Results in Physics 54 (2023) 107140

Fig. 3. Transmission spectrum of the moiré bigraphene structure with different angles of disorientation: (a) unstressed; (b) stressed; (c) strongly stressed; (d)
comparison of the spectra of passivated hydrogen atom and non-passivated single-layer graphene.

Fig. 4. CVC (a) and differential conductivity (b) of unstressed moiré bigraphene structure with different disorientation angles. (For comparison, the dashed line
shows the CVC and differential conductance of single-layer graphene.).

peak, forming a V-shaped spectrum with two minima, and at Θ = 0◦ we investigated.

observe a V-shaped spectrum with one minimum. This behavior of the
dynamic conductivity spectrum can be applied to the identification of
moiré nanostructures.
Conclusions
In summary, using numerical modeling methods main electro­
physical characteristics (the band structure, transmission spectrum,
CVC, and differential conductivity) of unstressed, stressed and strongly
stressed moiré bi-graphene nanodevices consisting of two layers of
graphene, where one layer of graphene is electrically contacted with
electrodes and the other remains electrically neutral, have been
It is revealed that the peculiarities of the band structure of the k-point
at the Fermi level in the stressed bilayer graphene system are the same,
but in the strongly stressed state it changes radically, probably, it is
connected with the changes of the bond between carbon atoms from
vdW to covalent. It has been established that when passive graphene is
twisted to certain angles (~4◦ and ~ 12◦ ) in the unstressed (and
stressed) state, the energy gap opens up, which values varies from 1.66
to 1.82 eV and 3.78–4.69 eV (2.27–2.67 eV and 4.28–4.93 eV),
respectively. It has been shown that the transmission spectrum of bilayer
graphene has a peak structure and it is lower by an order of magnitude
than the spectrum of single-layer graphene, and also when the graphene
distance is reduced by 2.85 Å, the peak structures begin to blur and their

6
D. Sergeyev et al.
Fig. 5. CVC (a) and differential conductivity (b) of a stressed moiré bigraphene structure with different disorientation angles. (For comparison, the dashed line shows
the CVC and differential conductance of single-layer graphene.).
Fig. 6. CVC (a) and differential conductivity (b) of a strongly stressed moiré bigraphene structure with different disorientation angles. (For comparison, the dashed
line shows the CVC and differential conductance of single-layer graphene.).
quasi-periodic behavior is partially disturbed. It is found that in the
unstressed state at twisting of passive graphene at Θ = 4◦ in the range of
bias voltage from 0 V to 1. 1 V there is a moderate increase in the value
of current up to ~ 10 μA, then a sharp increases in the current up to ~
185 μA with the appearance of a weakly expressed section of NDC, and
at Θ = 12◦ in the range of bias voltage from 1.35 V to 3 V there is a linear
increase in current up to ~ 220 μA; the CVC take N-shaped form in the
range 0.4 ÷ 1.3 V, forming a pronounced section of NDC (-1.8 μS at
− 0.71 V and 0.8 V). These changes also appear in the dI/dV spectrum of
the nanostructure. It is also found that in the stressed state at Θ = 4◦
there is a slight deviation from the unstressed state, and at Θ = 12◦ the
dI/dV-spectrum becomes asymmetric, and the NDC of − 15 μS occurs
only at a positive voltage of 0.8 V, and at a negative voltage the NDC is
suppressed. These results may be useful for calculations of new prom­
ising electronic devices of nanoelectronics.
CRediT authorship contribution statement
Daulet Sergeyev: . Ainur Duisenova: Formal analysis, Software,
Visualization. Andrei Solovjov: Formal analysis. Narmin Ismayilova:
Formal analysis.
Declaration of Competing Interest
The authors declare that they have no known competing financial
interests or personal relationships that could have appeared to influence
the work reported in this paper.
7
Results in Physics 54 (2023) 107140
Data availability
Data will be made available on request.
Acknowledgments
This research has is funded by the Science Committee of the Ministry
of Education and Science of the Republic of Kazakhstan (Grant No
AP14869773).
The author is grateful to the reviewer for valuable remarks that
improved the content of this work.
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