You are on page 1of 10

Results in Physics 54 (2023) 107104

Contents lists available at ScienceDirect

Results in Physics
journal homepage: www.elsevier.com/locate/rinp

Tunable dual-functional metasurface for wideband cross-polarization


conversion and wideband absorption
Chandu DS a ,∗, K.B.S. Sri Nagini a , Ping Jack Soh b , S.S. Karthikeyan c
a
School of Electronics Engineering, VIT-AP University, Amaravati, Andhra Pradesh, India
b
Faculty of Information Technology and Electrical Engineering, University of Oulu, Finland
c
Electronics and Communication Engineering, NIT Tiruchirappalli, India

ARTICLE INFO ABSTRACT

Keywords: This work presents a tunable and wideband dual-functional metasurface (DFM) operating in the terahertz
Cross-polarization converter regime with highest overlap bandwidth (OBW). The structure consists of a double-split ring resonator and
Dual-functional a meandered square ring resonator based on VO2 to achieve reflective cross-polarization conversion and
Double-split ring
absorption functionalities, respectively. When the phase changing material VO2 is in its metallic state, the
Meandered square ring
metasurface acts as a perfect absorber with a peak absorption of ≥ 90% over the operating band of 2.3–4.01
Silicon
Tunable
THz. When VO2 is in its insulating state, the metasurface acts as a reflective cross-polarization converter
Vanadium dioxide over a wideband from 1–4.1 THz with high polarization conversion ratio of ≥ 90%. The proposed DFM has a
Wideband stable response up to 45◦ of incidence in the polarization converter state and 60◦ of angular stability under the
absorber state. Further, tunability is achieved by integrating photoconductive silicon and controlling the optical
pump intensity in the double-split ring and meandered . square ring resonators. The proposed metasurface finds
its applications in security, detection and THz communication systems.

Introduction challenging to design metasurfaces with absorption and polarization


conversion characteristics due to the requirement of overlapping band-
Metasurfaces have evolved significantly over the last decade espe- width (OBW). Also, compared to single layered structure, the overlap
cially in the field of Terahertz (THz) photonic devices for manipulating bandwidth of the double layer structure is high [41] and by mul-
and controlling the characteristics of electromagnetic waves. They have tilayered devices to provide multifunctionalities with high capacity,
been used prominently in THz communications [1], biomedical de- device integration, high speed of operation and minaturization. Hence-
vices [2], and optical systems including metalens [3], optical filters [4], forth, unless otherwise mentioned, DFM is typically a dual-functional
polarization converters [5–7], THz absorbers [8] and beam splitters [9]. metasurface which exhibits absorption and linear-to-cross polarization
Numerous tunable metasurfaces have been developed [10–16] that can conversion functions.
dynamically modify their electromagnetic properties in response to In literature, resonator-based DFMs are mostly incorporated with a
external excitations. Recently, dual-functional metasurfaces (DFMs) are phase changing material. For example, DFMs can be designed by filling
gaining wide research attention due to the advantages of switchabil-
the gaps of orthogonal split ring resonators with photo-conductive
ity, compactness, integration cost effectiveness. Dual-functional meta-
silicon (Si) [29]. However, such structure suffers narrow bandwidth
surfaces have been designed on transmissive and reflective modes.
at the >90% absorption range and there is no OBW between the
In transmissive dual functionality of beam shaping and polarization
two functions. Wideband DFMs can be designed by tuning the Fermi
conversion is achieved by using all dielectric metasurface [17]. Dual-
energy levels of continuous and patterned graphene layers but these
functional metasurfaces could be realized the THz region to achieve
structures are not stable to oblique angles of incidence [30]. Vanadium
switchability between various functionalities such as: (i) linear to cir-
dioxide (VO2 ) is another commonly used material in DFMs due to
cular (LTC) and circular to linear (CTL) polarization conversion [18],
(ii) polarization and absorption or reflection [19,20], (iii) LTC and its inherent advantage of ultrafast response to thermal, electrical and
linear-cross polarization (LTX) conversion [21–23], (iv) THz absorp- optical excitation with a timescale of 100 fs. [43].
tion and LTC polarization conversion [24–28] and (v) THz absorption For example, tailored DFMs with square shaped VO2 patches and
and LTX conversion [29–42]. Among these dual-functionalities, it is SiO2 spacers [31] and arc-shaped VO2 resonators [32] achieved OBWs

∗ Corresponding author.
E-mail address: chandu.ds@vitap.ac.in (C. DS).

https://doi.org/10.1016/j.rinp.2023.107104
Received 19 August 2023; Received in revised form 1 October 2023; Accepted 18 October 2023
Available online 24 October 2023
2211-3797/© 2023 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
C. DS et al. Results in Physics 54 (2023) 107104

Fig. 1. (a) Geometric-view (b) cross-sectional view of the unit cell of the tunable dual functional metasurface.

Fig. 2. Top and bottom planes of (a) layer 1 which consists of meandered square ring and double split ring resonators and the gap is filled with Silicon, (b) layer 2 consists of
full coated vanadium dioxide and gold on the top and bottom planes, respectively and (c) proposed metasurface.

of ≥0.5 THz, with a large unit-cell size of 150 μm. On the other with square meandered VO2 ring embedded with photoconductive Si
hand, array of slotted metal rings and T-shaped VO2 resonators on a material. This structure is designed to be symmetric with the aim of
three layered dielectric resulted in a highly miniaturized unit-cell [33]. achieving near perfect absorption characteristics. The bottom plane
However, the OBW is only limited to 0.26 THz and there is a trade-off of a layer 1 is designed with circular split-ring made of gold with a
between the unit-cell size and bandwidth. Recently, a six-layer minia- conductivity of 4.56 × 107 S/m, thickness of 0.2 μm and it is integrated
turized DFM structure with gold gap-rings and VO2 surfaces achieved with photoconductive Si as shown in Fig. 2(a). Due to its anisotropic
a OBW of 1.22 THz but the structure has poor angular stability [35]. property, it provides cross polarization conversion characteristics. Sim-
A bifunctional metasurface based on germanium antimony-tellurium ilarly, the top plane of layer 2 is completely filled with VO2 and the
(GST) has proposed based on the combination of disk and metallic bottom plane is coated with gold as shown in Fig. 2(b). The top and
strip to achieve polarization conversion and absorption characteris- bottom planes of both these layers are separated by polyimide dielectric
tics [36]. From these existing works, it is understood that realization material with a relative permittivity of 3.5 and a dielectric loss tangent
of miniaturized THz based metasurfaces with dual-functionality and of 0.008. The entire structure is a combination of layer 1 and layer
high performance characteristics over a wide frequency range with 2 as illustrated in Fig. 2(c). A full wave electromagnetic simulator is
maximum intersection of operating bands is still a challenge. Moreover, used for simulation, where the periodic boundary conditions are set
to the best knowledge of the authors, none of the existing works in the along the x and y direction and the Floquet port is applied along the
open literature have dual-functionality and tunability features. z-direction. The optimized geometric parameters are: 𝑝 = 30 μm, ‴1
In this paper, a tunable dual-functional metasurface based on VO2 = 26 μm, ‴2 = 4.5 μm, 𝑤1 = 10 μm, 𝑟1 = 14.5 μm, 𝑟2 = 12 μm, 𝑑1 =
and photoconductive Si in the terahertz region is proposed. The meta- 8 μm, ℎ1 = ℎ3 = ℎ4 = ℎ6 = 0.2 μm, and ℎ2 = ℎ5 = 6 μm. The Drude
surface can be switched from a reflective cross-polarization converter model [45] is used to describe the relative permittivity of VO2 given
state to a perfect absorber state by controlling the temperature of VO2 . by Eq. (1)
The tunability of individual function can be obtained by varying the 𝜔2𝑝 (𝜎)
optical pump beam power incident on the photoconductive Si. The pro- 𝜀(𝜔) = 𝜀′ + 𝜀′′ = 𝜀∞ − (1)
posed metasurface provides the wideband performance characteristics 𝜔2 + 𝑖𝛾𝜔
in the operating bands with a maximum overlap bandwidth of 1.71 The dielectric permittivity at infinite frequency (𝜀∞ ) is 12, the
THz. In practical applications of 6G network/systems [44], there is an collision frequency (𝛾) is 5.75 × 1013 rad/s. The plasma frequency
urgent need to develop dual functional devices with dynamic switching which is dependent on conductivity [45] can be described by Eq. (2)
of the two functions, as well as dynamic tuning of performance at the 𝜎𝜔2𝑝 (𝜎◦ )
same time, which offers a wide range of possible applications in sensors, 𝜔2𝑝 (𝜎) = (2)
𝜎◦
detectors, solar cells, etc.
where, 𝜎◦ = 3 × 103 Ω/cm and 𝜔𝑝 (𝜎◦ ) = 1.4 × 1015 rad/s. From Eq. (1)
Dual functional metasurface design and (2), it can be said that varying the phases of VO2 leads to different
conductivities. When VO2 is in insulating state, its conductivity is 10
The geometry and side-view of the proposed DFM is shown in S/m and a dielectric permittivity of 9. Whereas, in the conducting
Fig. 1(a) and (b), respectively. The top plane of layer 1 is designed state VO2 has a conductivity of 2 × 105 S/m. Practically, temperature

2
C. DS et al. Results in Physics 54 (2023) 107104

Fig. 3. Schematic of the vacuumed cryostat.


Fig. 4. Decomposition of y-polarized incident 𝐸𝑖𝑦 and x-polarized reflected 𝐸𝑟𝑥 electric
field components along u-and v-directions which provides incident (𝐸𝑖𝑢 , 𝐸𝑖𝑣 ) and
reflected (𝐸𝑟𝑢 , 𝐸𝑟𝑣 ) electric field components in the uv-coordinate system.
changes can dynamically alter the conductivity of VO2 within various
layers. The Janis cryostat shown in Fig. 3 allows to perform the thermal
tuning characterization of the sample [46]. Inside the Janis cryostat,
there is a resistive heater. This heater is used to control the overall resonator disappears and it exhibits anisotropic properties and acts as
temperature of the cryostat. By adjusting the power supplied to the a reflective cross-polarization converter.
heater, the user can raise or lower the temperature of the cryostat to the To understand the polarization conversion, consider a y-polarized
desired level. As observed in Fig. 3, the proposed DFM (called as sam- incident electromagnetic wave along the z-direction. The incident EM
ple) is fixed onto the copper cold finger of the cryostat. The cold finger wave is decomposed into two orthogonal u and v components along the
is designed such that it can transfer and maintain temperatures, thereby u and v-axis which makes an angle of +45◦ and −45◦ , respectively with
exposing the sample to the controlled environment. To monitor the respect to y-axis as shown in Fig. 4. At z = 0, the incident y-polarized
temperature of the sample during experiments, a thermistor is installed EM wave can be represented by Eq. (4)
on the copper cold finger, a few wavelengths away from the sample.
𝐸𝑖 = 𝑦𝐸
̂ 𝑖 = (𝑢𝐸
̂ 𝑖𝑢 + 𝑣𝐸
̂ 𝑖𝑣 ) (4)
It provides real-time feedback on the temperature of the cold finger
and the sample. The overall operation of the Janis cryostat involves The reflected x-polarized electric field of the EM wave can be described
controlling the resistive heater to achieve and maintain the desired by Eq. (5)
temperature within the cryostat chamber. The thermistor continuously
measures the temperature of the cold finger, ensuring that it remains 𝐸𝑟 = (𝑢𝐸
̂ 𝑟𝑢 + 𝑣𝐸
̂ 𝑟𝑣 ) (5)
stable and within the specified temperature range. The reflected wave can be represented in terms of the
On the other hand, photoconductivity Si with relative permittivity co-polarization components (𝑅𝑢𝑢 , 𝑅𝑣𝑣 ) and cross-polarization compo-
of 11.7 is used for tunability. The conductivity of Si will be varied nents (𝑅𝑢𝑣 , 𝑅𝑣𝑢 ) along u and v-axes given by Eq. (6)
with the variation in external pump beam power. Excess photo-carriers
are generated when the optical pump beam is incident on the Silicon ̂ 𝑢𝑢 𝐸𝑖𝑢 𝑒𝑗𝜙𝑢𝑢 + 𝑅𝑢𝑣 𝐸𝑖𝑣 𝑒𝑗𝜙𝑢𝑣 ) + 𝑣(𝑅
𝐸𝑟 = 𝑢(𝑅 ̂ 𝑣𝑣 𝐸𝑖𝑣 𝑒𝑗𝜙𝑣𝑣 + 𝑅𝑣𝑢 𝐸𝑖𝑢 𝑒𝑗𝜙𝑣𝑢 ) (6)
surface as long as the pump beam power is greater than its band gap
where, 𝜙𝑢𝑢 , 𝜙𝑣𝑣 , 𝜙𝑢𝑣 and 𝜙𝑣𝑢 are phase differences between the corre-
energy. The change in conductivity of Si with beam power [47] can be
sponding components.
described by using Eq. (3)
The two conditions that must be satisfied in order to achieve cross-
𝜎𝑆𝑖 = 4.863 × 10−4 × 𝐼 2 + 0.1856 × 𝐼 + 1.569 (3) polarization conversion are: (i) The magnitudes of co-polarization and
cross-polarization reflection coefficients of the u- and v-components
where, 𝐼 is the energy flux of the optical beam. Without the illumina-
must be |𝑅𝑢𝑢 | = |𝑅𝑣𝑣 | ≈ 1 and |𝑅𝑢𝑣 | = |𝑅𝑣𝑢 | ≈ 0. For the proposed
tion of the optical pump beam, the conductivity of Si is 1 S/m and
structure, the magnitude of u and v components are close to 1 and 0,
with optical pump beam illumination, the conductivity increases up
respectively as shown in Fig. 5(a). (ii) The phase difference between
to 1 × 105 S/m. When the pump light intensity is 0, the conductivity
u and v-components (𝜙𝑣𝑣 − 𝜙𝑢𝑢 ) = 180◦ , to satisfy the condition for
of photoconductive silicon is 1 S/m, and it increases significantly to
orthogonality between the u and v-components. It can be observed from
1 × 105 S/m when the intensity of the pump light is 249 μJ/cm2 .
Fig. 5(b), that a phase difference of 180◦ ± 37◦ is maintained over the
By using the optical excitation, the intensity required for VO2 is 8
operating bandwidth from 1–4.1 THz. At resonant frequencies 𝑓1 = 1.6
mJ/cm2 [48], which is considerably greater than the intensity required
THz, 𝑓2 = 2.7 THz and 𝑓3 = 3.7 THz, the phase difference is 180◦ , which
for photoconductive silicon. Therefore, the excitation of photocon-
satisfies the orthogonality condition. Hence, the proposed metasurface
ductive silicon with the pump light has almost no effect on VO2 .
provides the cross-polarization conversion.

Result analysis and tunability


Wideband cross-polarization converter

Working principle The co-polarized reflection coefficients are shown in Fig. 6(a). The
closely spaced resonant frequencies provides a wideband polarization
When the temperature T < 340 K, VO2 will remain in the insulating conversion from 1–4.1 THz. The co-polarized reflection coefficient 𝑅𝑦𝑦
state and the conducting elements in the DFM consist of only the is obtained using y-polarized reflected (𝐸𝑟𝑦 ) and incident (𝐸𝑖𝑦 ) wave
double-split ring gold resonator with the splits filled with photocon- can be obtained by using Eq. (7)
ductive Si in layer 1 and a fully coated bottom gold layer in layer 2. |𝐸𝑟𝑦 |
Due to the existence of the splits, the symmetry of the circular ring 𝑅𝑦𝑦 = (7)
|𝐸𝑖𝑦 |

3
C. DS et al. Results in Physics 54 (2023) 107104

Fig. 5. (a) Reflection coefficients of co-polarized and cross-polarized uv components so that the magnitudes of the corresponding components are close to 1 and 0, respectively,
(b) absolute phase difference between the reflected u and v components at normal incidence is maintained within 180◦ ± 37◦ .

Fig. 6. (a) Reflection coefficients of co-polarized (𝑅𝑦𝑦 ) and cross-polarized (𝑅𝑥𝑦 ) components of the incident y-polarized electromagnetic wave, (b) The PCR for normal incidence
of the y-polarized EM wave, and (c) angular stability.

described by using Eq. (9)


|𝑅𝑥𝑦 |2
𝑃 𝐶𝑅 = (9)
|𝑅𝑥𝑦 |2 + |𝑅𝑦𝑦 |2
The PCR at resonant frequencies 1.6 THz, 2.6 THz and 3.7 THz
are 99.99%, 99.79% and 97.66% respectively, as shown in Fig. 6(b).
Within the operating band the PCR is >90%. The polarization converter
performance characteristics can be analyzed for various incident angles
as illustrated in Fig. 6(a). The lower and higher resonating modes are
not sensitive for incident angles up to 45◦ . But it is noted that there is
a significant change in PCR for angles of incidence above 60◦ . Thus,
the proposed metasurface achieved angular stability up to 45◦ , where
the polarization converter maintains a PCR of >80%. Fig. 7 shows
the absorbance in the polarization conversion mode. The value of the
absorbance is less than 25% within the operating band of 1 – 4.1 THz
Fig. 7. Absorbance in the polarization conversion mode. of the reflective cross-polarization converter. This shows the efficiency
of dual-mode conversion for the proposed metasurface.
The tunability of the proposed polarization converter is achieved
and the cross-polarized reflection coefficients (𝑅𝑥𝑦 & 𝑅𝑦𝑥 ) are given by by utilizing photoconductive Si. When the conductivity of Si is 1 S/m,
Eq. (8) it acts as an insulator and breaks the symmetry of the ring resonator.
The magnitude of co-polarized reflection coefficients decreases and the
|𝐸𝑟𝑥 | cross-polarized reflection coefficients increase, so that the polarization
𝑅𝑥𝑦 = (8)
|𝐸𝑖𝑦 | conversion ratio is high. When the conductivity of Si is increased to 105
S/m, Si acts as a metallic conductor and structure becomes symmetrical
where, 𝐸𝑟𝑥 and 𝐸𝑖𝑦 are the x-polarized reflected and y-polarized in- ring resonator. Thus the magnitude of co- and cross-polarized reflection
cident waves, respectively. The efficiency of the cross polarization coefficients opposite, the corresponding PCR becomes very low. It can
converter can be analyzed by using polarization conversion ratio (PCR) be observed from Fig. 8, the PCR is >80% for insulating state and it is

4
C. DS et al. Results in Physics 54 (2023) 107104

Working principle

The absorber functionality is achieved mainly due to the top VO2


layer and the upper polyimide layer and the middle VO2 layer. To
better understand the mechanism of the absorber, the concept of
impedance matching is used. The relative impedance of the metasurface
is described as the ratio of effective impedance of the absorber to that of
the free space impedance to achieve perfect absorption characteristics
of the metasurface. The relative impedance of the absorber can be
calculated by using Eq. (10)

(1 + 𝑆11 )2 − (𝑆21 )2
𝑍= (10)
(1 − 𝑆11 )2 − (𝑆21 )2
The real and imaginary values of relative impedance of the absorber
are approximately to 1 and 0, respectively, with in the operating band
2.3–4.01 THz as shown in Fig. 10(b).

Fig. 8. Tunability of polarization converter for different conductivities of Si. Absorptivity and tunability

The absorptivity of the metasurface can be calculated as A = 1


− R(𝜔) − T (𝜔) = 1 − |𝑆21 |2 − |𝑆11 |2 , where, R(𝜔) and T (𝜔) are the
reflective and transmissive coefficients of the metasurface, respectively.
There is no transmission of energy through the metasurface, |𝑆21 |2 = 0.
Thus, the absorptivity of the metasurface is modified as A = 1 − R(𝜔).
It can be observed from Fig. 11(a), at resonant frequency of 3.14 THz,
the absorptivity is 99.68% and is 90% with in the entire operating
frequency range (2.3–4.01 THz). The performance of the absorber for
different angles of incidence are shown in Fig. 11(b). It can be seen
that the proposed metasurface has absorption angular stability of up to
60◦ . The tunability of the proposed absorber can be obtained by adding
photoconductive Si to the single meander of the square resonator. By
varying the optical pump beam power, the absorber achieved the tun-
able characteristics for different conductivities as shown in Fig. 12. As
the conductivity of the photoconductive Si decreases, the symmetry of
the meandered ring is broken and the structure exhibits poor absorption
characteristics.

Analysis of the DFM and sample fabrication process


Fig. 9. Absorption characteristics of Absorber 1, Absorber 2, and Absorber 3. (For
interpretation of the references to color in this figure legend, the reader is referred to The physical mechanism of the proposed metasurface can be ana-
the web version of this article.) lyzed by using electric field and current distributions of the conducting
layers. It can be observed from Fig. 13, the maximum electric field
distribution is concentrated along the double-split ring resonator for
<60% for metallic state of Si. Therefore, integrating Si to the structure VO2 in insulating state. When VO2 is in conducting state, the maximum
provides the tunability of the metasurface within the operating band. electric field distribution is on the square meander structure. The direc-
tion of current on the top and bottom conducting layers are flowing in
Tunable wideband absorber opposite directions at 1.6 THz and 3.7 THz, which is referred as the
magnetic resonance. At a resonant frequency of 2.7 THz, the currents
Design approach for maximum OBW
are parallel, which leads to electric resonance. Thus, the metasurface
acts as reflective cross polarization converter due to the plasmonic
When the temperature 𝑇 > 340 K, VO2 is in metallic state and
resonance.
the metasurface acts as an absorber. Since the operating band of
polarization converter is from 1–4.1 THz, in order to achieve maximum
Parametric analysis
overlap between the frequency bands, it is desired that the operating
range of the absorber also falls in the same frequency band. Initially,
a square ring resonator (Absorber 1) with inner and outer dimensions The performance characteristics of metasurface depends on the
of 27 μm and 29 μm, respectively, is designed. The absorption range is dimensions of the structure. The impact of geometrical parameters on
2.72–4.46 THz and the overlap of the frequency bands is very low as PCR is analyzed by using radius of inner conductor (𝑟2 ) and split gap
shown in Fig. 9. Due to this reason, the square resonator is meandered of ring-resonator (𝑑1 ). From Fig. 14(a), it can be observed that as the
(Absorber 2) with one turn of length 4.5 μm and width 10 μm, so that radius of the inner conductor is increased from 10 μm to 14 μm, there
it provides the red shift by an amount of 0.59 THz, with an operating is a red shift in the highest resonant frequency from 4.34 to 3.67 THz,
range from 2.3–4.01 THz. Further, adding one more turn to the square so that the bandwidth will be decreased. For 𝑟2 > 12 μm, there is an
resonator (Absorber 3) resulted in narrow operating bandwidth from effect on PCR which is dropped to 70%. On the other hand, for 𝑟2 <
2.39–3.72 THz as shown in Fig. 9. Therefore, Absorber 2 is chosen as a 12 μm the bandwidth is decreased to 2.5 THz. When split-gap of the
optimized structure which provides simultaneous wideband operation ring resonator is increased from 4 μm to 12 μm, there is change in the
and maximum overlap of operating bands for the DFM as shown in lowest resonant frequency. But the highest resonant frequency is blue
Fig. 10(a). shifted from 3.5 to 4.4 THz, and there is no significant change in PCR

5
C. DS et al. Results in Physics 54 (2023) 107104

Fig. 10. (a) Reflection coefficient of polarization converter and absorber, (b) Relative impedance of absorber.

Fig. 11. (a) Absorptivity and reflectivity of absorber, (b) Angular stability of absorber for various angle of incidences which provides the stability up to 60◦ .

which is >80% as shown in Fig. 14(b). Thus, the optimized values of


𝑟2 and 𝑑1 are chosen as 12 μm and 8 μm, respectively, to achieve best
bandwidth and PCR performance characteristics simultaneously.
The effect of performance characteristics of absorber can be ana-
lyzed by varying the geometrical parameters of the structure. When
the length of the inner square ring resonator (𝑙1 ) is varied from 24
to 28 μm, there is no change in the highest resonant frequency, but
there is a change in reflection from −15 dB to −35 dB which effects
the absorptivity of the metasurface as shown in Fig. 15(a). When the
length of the square meander is 𝑙2 < 4.5 μm, there is significant blue
shift in the highest frequency which effects the maximum overlapping
frequency band as shown in Fig. 15(b). For 𝑙2 > 4.5 μm, there is a small
effect in bandwidth. Thus the optimized values of 𝑙1 and 𝑙2 are chosen as
27 μm and 4.5 μm, respectively, in order to achieve perfect absorptivity
and maximum overlap bandwidth.
Table 1 compares the performance of the proposed tunable and DFM
with the other existing works. The DFM in this work provides improved
performance in terms of maximum overlapping bandwidth between the
functionalities with a compact unit cell. Despite the small unit cell size,
Fig. 12. Tunability of absorber for different conductivities of Si. the metasurface in [33] suffers from low OBW. Several other existing
DFMs exhibit either poor OBW or limited by the angular stability issues.
The proposed DFM operates with integrated wideband polarization
conversion and absorption characteristics with the highest OBW and
maximum angular stability in both the cases. More importantly, the

6
C. DS et al. Results in Physics 54 (2023) 107104

Fig. 13. Electric field of polarization converter, absorber and current distributions of polarization converter at three resonance frequencies 1.6 THz, 2.7 THz and 3.7 THz on the
double split ring resonator and ground.

Fig. 14. Parametric analysis of reflective cross-polarization converter. Effect of r2 and (b) Effect of d2 . (For interpretation of the references to color in this figure legend, the
reader is referred to the web version of this article.)

Fig. 15. Parametric analysis of absorber. (a) variation of l1 and (b) variation of l2 . (For interpretation of the references to color in this figure legend, the reader is referred to
the web version of this article.)

7
C. DS et al. Results in Physics 54 (2023) 107104

Fig. 16. Fabrication process of the dual functional polarization converter and absorber.

Table 1
Performance comparison of dual-functional metasurface with existing works of unitcell size ≤ 100 μm.
Ref UC FR (THz) OBW AS (◦ ) Material/
(μm) Abs PC (%) Abs PC IT(Y/N)
[29] 30 3.12–3.36 2.01–2.56 0 60 45 Si/N
[42] 90 1.07–1.19 1.43–1.51 0 NG NG VO2 /N
[38] 30 1.5–2.3 2.12–3.58 8.6 60 45 VO2 /N
[33] 10 0.67–0.95 0.69–1.38 36.6 NG NG VO2 /N
[40] 35 0.88–2.1 0.97–1.47 40.9 60 40 G/N
[37] 60 1.03–2.62 1.81–2.39 36.47 50 15 VO2 /N
[30] 100 1.74–3.52 1.54–2.55 40.91 50 25 G/N
[35] 60 3.33–5.62 2.54–4.55 39.61 40 30 VO2 /N
TW* 30 2.3–4.01 1–4.1 55.16 60 45 VO2 /Y

TW indicates this work, UC-Unitcell, FR-Frequency range, OBW-Overlap bandwidth, AS-Angular stability, IT-Independent tunability, Si-Silicon,
VO2 -Vanadium dioxide, GST-Germanium antimony-tellurium, G-Graphene, NG-Not given, Y-Yes, N-No

existing DFMs are not tunable, whereas the dynamic feature of ad- 16(f). The photo-resist is uniformly spin-coated on the gold film, while
justing the operating frequency and applications (tunability) provides the evaporation deposition of a 0.2 μm thick gold film on the VO2 film is
robustness to the proposed DFM in this work. carried out as shown in 16(g). Silicon arcs for tunability are achieved
using electron beam lithography as shown in 16(h). The spin-coating
Fabrication process technique process is repeated for the second substrate to produce a
polyimide layer with a thickness of 6 μm. On the second polyimide
Sputtering and lithography are used for the fabrication process of layer, the VO2 film is again prepared, and the photoresist is uniformly
the proposed metasurface as shown in Fig. 16. First, using sputtering spun on the VO2 film. By using lithography technology, the VO2 pattern
technique, gold is deposited onto quartz, and then 0.2 μm gold is coated
with silicon structure is finally etched as shown in 16(i).
onto the quartz as shown in 16(a), (b), (c). The polyimide solution is
uniformly spin-coated on the gold as shown in 16(d), and after being
heated to a high temperature, a solid polyimide layer that is 6 μm thick Conclusion
is created as shown in 16(e). The spin-coating technique is also used to
create the VO2 film on the polyimide layer, and the wet film is dried A dual-functional and tunable metasurface based on phase changing
under nitrogen protection to create the 0.2 μm thick film as shown in materials VO2 and Si is proposed. By adjusting the optical pump beam

8
C. DS et al. Results in Physics 54 (2023) 107104

power and temperature, the metasurface achieved both the tunabil- [16] So S, Mun J, Park J, Rho J. Revisiting the design strategies for metasurfaces:
ity and dual-functionality characteristics, respectively. The absorption Fundamental physics, optimization, and beyond. Adv Mater 2022;2206399.
[17] Li J, Zheng C, Li J, Wang G, Liu J, Yue Z, Hao X, Yang Y, Li F, Tang T, et al.
characteristics are achieved by using square meandered resonator,
Terahertz wavefront shaping with multi-channel polarization conversion based
which provides a peak absorption of >90%, when VO2 serves as con- on all-dielectric metasurface. Photonics Res 2021;9(10):1939–47.
ductor. The reflective cross-polarization conversion is obtained by using [18] Wang J, Zhou J, Guo K, Shen F, Zhou Q, Guo Z, et al. High-efficiency
the double-split ring resonator along the anisotropic axis when the VO2 terahertz dual-function devices based on the dielectric metasurface. Superlattices
is in the insulator state. The combination of the closely spaced resonant Microstruct 2018;120:759–65.
[19] Li J, Li J, Yang Y, Li J, Zhang Y, Wu L, Zhang Z, Yang M, Zheng C, Li J,
frequencies provides the wideband characteristics of the polarization et al. Metal-graphene hybrid active chiral metasurfaces for dynamic terahertz
converter. The DFM achieved an overlap bandwidth of 1.71 THz with wavefront modulation and near field imaging. Carbon 2020;163:34–42.
an extremely small unit cell size of 30 μm and the structure is angularly [20] Li J, Zhang Y, Li J, Yan X, Liang L, Zhang Z, Huang J, Li J, Yang Y, Yao J. Ampli-
stable up to at least 45◦ in both the functionalities. tude modulation of anomalously reflected terahertz beams using all-optical active
pancharatnam–berry coding metasurfaces. Nanoscale 2019;11(12):5746–53.
[21] Pan W, Li Y, Zhang Z, Zhang B, Li H. Design and analysis of a multi-band
CRediT authorship contribution statement and dual-functional terahertz wave polarization converter based on asymmetric
cross-shaped metasurface. Opt Commun 2022;129171.
Chandu DS: Conceptualization, Investigation, Methodology, Soft- [22] Yuan X, Chen J, Wu J, Yan X, Zhang Y, Zhang X. Graphene-based tunable
ware, Supervision, Writing – original draft. K.B.S. Sri Nagini: Concep- linear and linear-to-circular polarization converters in the THz band. Results
Phys 2022;37:105571.
tualization, Data curation, Methodology, Resources, Writing – original
[23] Bilal R, Baqir M, Choudhury P, Ali M, Rahim A. On the specially designed fractal
draft. Ping Jack Soh: Supervision, Validation, Writing – review & metasurface-based dual-polarization converter in the THz regime. Results Phys
editing. S.S. Karthikeyan: Supervision, Validation, Writing – review 2020;19:103358.
& editing. [24] Yan D, Meng M, Li J, Li J, Li X. Vanadium dioxide-assisted broadband absorption
and linear-to-circular polarization conversion based on a single metasurface
design for the terahertz wave. Opt Express 2020;28(20):29843–54.
Declaration of competing interest [25] Cao M, Wang J, Yuen MM, Yan D. Realization of multifunctional metamate-
rial structure based on the combination of vanadium dioxide and graphene.
The authors declare that they have no known competing finan- Nanomaterials 2022;12(16):2883.
cial interests or personal relationships that could have appeared to [26] He J, Zhu Q, Zhou Y, Wang J, Cai G, Li M, Dong J. Lightweight switch-
able bifunctional metasurface based on VO2: High-efficiency absorption and
influence the work reported in this paper.
ultra-wideband circular polarization conversion. Optik 2022;257:168837.
[27] Dutta R, Mitra D, Ghosh J. Dual-band multifunctional metasurface for ab-
Data availability sorption and polarization conversion. Int J RF Microw Comput-Aided Eng
2020;30(7):e22200.
No data was used for the research described in the article. [28] Cheng Y, Chen H, Zhao J, Mao X, Cheng Z. Chiral metamaterial absorber with
high selectivity for terahertz circular polarization waves. Opt Mater Express
2018;8(5):1399–409.
References [29] Yu D, Dong Y, Ruan Y, Li G, Li G, Ma H, Deng S, Liu Z. Photo-excited
switchable terahertz metamaterial polarization converter/absorber. Crystals
[1] Bai X, Zhang F, Sun L, Cao A, Zhang J, He C, Liu L, Yao J, Zhu W. 2021;11(9):1116.
Time-modulated transmissive programmable metasurface for low sidelobe beam [30] Li Z, Yang R, Wang J, Zhao Y, Tian J, Zhang W. Multifunctional metasurface for
scanning. Research 2022;2022. broadband absorption, linear and circular polarization conversions. Opt Mater
[2] Rahman BA, Viphavakit C, Chitaree R, Ghosh S, Pathak AK, Verma S, Sakda N. Express 2021;11(10):3507–19.
Optical fiber, nanomaterial, and thz-metasurface-mediated nano-biosensors: A [31] Song Z, Zhang J. Achieving broadband absorption and polarization conversion
review. Biosensors 2022;12(1):42. with a vanadium dioxide metasurface in the same terahertz frequencies. Opt
[3] Qin C, Fan W, Wu Q, Jiang X. Polarization insensitive achromatic terahertz Express 2020;28(8):12487–97.
metalens based on all-dielectric metasurfaces. Opt Commun 2022;512:128061. [32] Zhang H, He X, Zhang D, Zhang H. Multitasking device with switchable and
[4] Kim T-H, Kim S, Jeon YP, Ahn JH, Lee BW, Park G-S, Park J, Kim YJ, Park SY, tailored functions of ultra-broadband absorption and polarization conversion. Opt
Yoo YJ. Ultra-wideband transmission filter based on guided-mode resonances in Express 2022;30(13):23341–58.
two terahertz metasurfaces. Opt Express 2022;30(23):42738–48. [33] Li Y, Zeng L, Zhang H, Zhang D, Xia K, Zhang L. Multifunctional and tunable
[5] Pati SS, Sahoo S. Single/dual/triple broadband metasurface based polarisation metastructure based on VO 2 for polarization conversion and absorption. Opt
converter with high angular stability for terahertz applications. Micromachines Express 2022;30(19):34586–600.
2022;13(9):1547. [34] Sun Y, Wang Y, Ye H, Li J, Fan H, Yu L, Yu Z, Liu Y, Wu T. Switchable bifunc-
[6] Nagini KS, Chandu D. TeraHertz wideband cross-polarization conversion meta- tional metasurface based on VO2 for ultra-broadband polarization conversion and
surface based on double split-ring resonator. AEU - Int J Electron Commun perfect absorption in same infrared waveband. Opt Commun 2022;503:127442.
2023;154826. [35] Niu J, Yao Q, Mo W, Li C, Zhu A. Switchable bi-functional metamaterial based
[7] Nagini KS, Chandu D. Wideband and tunable reflective cross-polarization con- on vanadium dioxide for broadband absorption and broadband polarization in
version metasurface for TeraHertz applications. IEEE Photon J 2022;14(5):1–8. terahertz band. Opt Commun 2023;527:128953.
[8] Wu B, Liu X, Fu G, Liu G, Liu Z, Chen J. Bi-channel switchable broadband [36] Chen J, Chen X, Liu K, Zhang S, Cao T, Tian Z. A thermally switchable
terahertz metamaterial absorber. IEEE Photon Technol Lett 2022. bifunctional metasurface for broadband polarization conversion and absorption
[9] Deng W, Chen L, Yuan S, Wang Y, Wang R, Wang Z, Yu Y, Wu X, Zhang X. based on phase-change material. Adv Photonics Res 2022;2100369.
Silicon-based integrated terahertz polarization beam splitters. J Lightwave [37] Peng Z, Zheng Z, Yu Z, Lan H, Zhang M, Wang S, Li L, Liang H, Su H. Broadband
Technol 2022;40(1):170–8. absorption and polarization conversion switchable terahertz metamaterial device
[10] Ko B, Badloe T, Rho J. Vanadium dioxide for dynamically tunable photonics. based on vanadium dioxide. Opt Laser Technol 2023;157:108723.
ChemNanoMat 2021;7(7):713–27. [38] Lian X, Ma M, Tian J, Yang R. Study on a bifunctional switchable metasurface
[11] Badloe T, Kim J, Kim I, Kim W-S, Kim WS, Kim Y-K, Rho J. Liquid crystal- with perfect absorption and polarization conversion based on VO2 and graphene
powered mie resonators for electrically tunable photorealistic color gradients in THz region. Diam Relat Mater 2023;110060.
and dark blacks. Light Sci Appl 2022;11(1):118. [39] Miao X, Xiao Z, Cui Z, Zheng T, Wang X. Dual-functional metamaterial with
[12] Badloe T, Kim I, Kim Y, Kim J, Rho J. Electrically tunable bifocal metalens ultra-broadband polarization conversion and narrowband absorption based on
with diffraction-limited focusing and imaging at visible wavelengths. Adv Sci vanadium dioxide. Optik 2023;281:170810.
2021;8(21):2102646. [40] Wei H, Ji T, Huang J. Graphene-based active tunable metasurfaces for
[13] Badloe T, Kim Y, Kim J, Park H, Barulin A, Diep YN, Cho H, Kim W-S, Kim Y-K, dynamic terahertz absorption and polarization conversion. J Renew Mater
Kim I, et al. Bright-field and edge-enhanced imaging using an electrically tunable 2023;11(2):731–43.
dual-mode metalens. ACS Nano 2023;17(15):14678–85. [41] Nagini KS, Chandu D. Dual functional metasurface with broadband polarization
[14] Ko B, Badloe T, Yang Y, Park J, Kim J, Jeong H, Jung C, Rho J. Tunable conversion and perfect absorption. Mater Today: Proc 2023.
metasurfaces via the humidity responsive swelling of single-step imprinted [42] Xing M, Teng Y. Switchable dual-function terahertz metamaterial device based
polyvinyl alcohol nanostructures. Nat Commun 2022;13(1):6256. on vanadium dioxide. Coat 2023;13(4):753.
[15] Kim J, Seong J, Yang Y, Moon S-W, Badloe T, Rho J. Tunable metasurfaces [43] Huang J, Li J, Yang Y, Li J, Zhang Y, Yao J, et al. Active controllable dual
towards versatile metalenses and metaholograms: a review. Adv Photonics broadband terahertz absorber based on hybrid metamaterials with vanadium
2022;4(2):024001. dioxide. Opt Express 2020;28(5):7018–27.

9
C. DS et al. Results in Physics 54 (2023) 107104

[44] Dang S, Amin O, Shihada B, Alouini M-S. What should 6G be? Nat Electron [47] Cheng Y, Gong R, Zhao J. A photoexcited switchable perfect metamaterial
2020;3(1):20–9. absorber/reflector with polarization-independent and wide-angle for terahertz
[45] Perucchi A, Baldassarre L, Postorino P, Lupi S. Optical properties across the waves. Opt Mater 2016;62:28–33.
insulator to metal transitions in vanadium oxide compounds. J Phys: Condens [48] Xu J, Tang J, Cheng Y, Chen M, Wang H, Xiong J, Wang T, Wang S,
Matter 2009;21(32):323202. Zhang Y, Wen H, et al. Multifunctional analysis and verification of lightning-type
[46] Li H, Peng H, Ji C, Lu L, Li Z, Wang J, Wu Z, Jiang Y, Xu J, Liu Z. electromagnetic metasurfaces. Opt Express 2022;30(10):17008–25.
Electrically tunable mid-infrared antennas based on VO2. J Modern Opt
2018;65(15):1809–16.

10

You might also like