DREAM INSTITUTE OF TECHNOLOGY

Campus: Thakurpukur, B. H. Road, Kolkata – 700 104.

A REPORT ON
(PN junction diode and its operation under NO-BIAS condition.)
FOR THE COURSE
SUBJECT NAME-ELECTRONICS DEVICE
SUBJECT CODE: - EC-301

SUBMITTED BY:
NAME- MEHEBUB ISLAM.
. COLLEGE ROLL NO. – EC/22L/10
DEPT.- ELECTRONICS & COMMUNICATION ENGINEERING

YEAR- 2ND (Lateral), SEMESTER- 3RD

DATE OF SUBMISSION: - 20/11/2022

What is a P-N junction Diode?
A P-N junction diode is a piece of silicon that has two terminals. One of the
terminals is doped with P-type material and the other with N-type material.
The P-N junction is the basic element for semiconductor diodes. A
Semiconductor diode facilitates the flow of electrons completely in one
direction only – which is the main function of semiconductor diode. It can
also be used as a Rectifier.

PN Junction Diode Theory

There are two operating regions: P-type and N-type. And based on
the applied voltage, there are three possible “biasing” conditions
for the P-N Junction Diode, which are as follows:

Zero Bias – No external voltage is applied to the PN junction diode.

Forward Bias– The voltage potential is connected positively to the
P-type terminal and negatively to the N-type terminal of the Diode.
Reverse Bias– The voltage potential is connected negatively to
the P-type terminal and positively to the N-type terminal of the
Diode.
 Zero bias P-N junction
In n-type semiconductor materials, pentavalent impurities are
added while in p-type semiconductor materials, trivalent
impurities are added. If the impurities added to p-type and n-
type semiconductor materials are not uniform then at one
region large number of charge carriers are present while at
another region small number of charge carriers are present.
Due to this non uniform doping charge carriers at high
concentration region repel from each other and move towards
the low concentration region to achieve uniform concentration
all over the material.
Charge carriers crossing the junction
The p-n Junction in which no external voltage is applied is
called zero bias p-n junction. Zero bias p-n Junction is also
called as unbiased p-n junction.

Let us consider a zero bias p-n junction as shown in below

figure, at n-type semiconductor large number of free
electrons is present while at p-type semiconductor small
number of free electrons is present. Hence, the concentration
of electrons at n-type semiconductor is high while the
concentration of electrons at p-type semiconductor is low.

Due to this high concentration of electrons at n-side, they

get repelled from each other. Hence they try to move
towards the low concentration region. Also, since free
electrons and holes at the junction are very close to each
other. According to coulomb’s law there exist an
electrostatic force of attraction between the opposite
charges.

Hence, the free electrons from the n-side are attracted

towards the holes at the p-side. Thus, the free electrons
move from n-region (high concentration region) to p-region
(low concentration region).

At p-type semiconductor large number of holes is present

while at n-type semiconductor small number of holes is
present. Hence, the concentration of holes at p-type
semiconductor is high while the concentration of holes at n-
type semiconductor is low. Also, since electrons and holes at
the junction are very close to each other. According to
coulomb’s law there exist an electrostatic force of attraction
between the opposite charges.
Hence, the holes from the p-side are attracted towards the
free electrons at the n-side. Thus, the holes move from p-
region (high concentration region) to n-region (low
concentration region).

Formation of positive and negative ion

The free electrons crossing the junction provide the extra
electrons to the p-side atoms by filling the holes in the p-side
atoms. The atom which gains extra electron has more number
of electrons than protons. We know that, when the atom gains
an extra electron from the outside atom it will become a
negative ion. Negative ions are also called as acceptors because they accept
extra electrons from outside atoms.

Thus, each free electron that crosses the junction to fill the
holes in the p-side creates negative ions on the p-side.

Similarly each free electron that left the n-side atom to fill the
holes in the p-side atom creates a hole at n-side atom. The
atom which loses an electron has more number of protons
than electrons. We know that, when the atom loses an
electron it will becomes a positive ion. Positive ions are also
called as donors because they donate extra electrons to the
outside atoms.

Thus, each free electron that left the n-side parent atom and
crosses the junction to fill the holes in the p-side atom creates
positive ion at n-side.