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June 2001
FDS4935
Dual 30V P-Channel PowerTrench MOSFET
General Description Features
This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V RDS(ON) = 23 mΩ @ VGS = –10 V
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management RDS(ON) = 35 mΩ @ VGS = –4.5 V
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V). • Low gate charge (15nC typical)
DD1 5 4
DD1
DD2 6 Q1 3
D2
D
7 2
SO-8 G1 Q2
S1 G 8 1
G2 S
S2 S
Pin 1 SO-8 S
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –24 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = –25 V, VDS = 0 V –100 nA
IGSSR Gate–Body Leakage, Reverse VGS = 25 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C
4.4 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = –10 V, ID = –7 A 19 23 mΩ
On–Resistance VGS = –4.5 V, ID = –5.5 A 28 35
VGS= –10 V, ID = –7 A, TJ=125°C 26 34
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –30 A
gFS Forward Transconductance VDS = –5 V, ID = –7 A 19 S
Dynamic Characteristics
Ciss Input Capacitance VDS = –15 V, V GS = 0 V, 1233 pF
Coss Output Capacitance f = 1.0 MHz 311 pF
Crss Reverse Transfer Capacitance 152 pF
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
50
VGS = -10V -5.0V 2.4
-6.0V -4.5V
DRAIN-SOURCE ON-RESISTANCE
2.2
40 VGS = -3.5V
-ID, DRAIN CURRENT (A)
-4.0V 2
RDS(ON), NORMALIZED
30 1.8
-4.0V
-3.5V
1.6
-4.5V
20
1.4 -5.0V
-3.0V -6.0V
1.2
10
-10V
1
0 0.8
0 1 2 3 4 5 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)
1.6 0.08
ID = -7A
DRAIN-SOURCE ON-RESISTANCE
1.4
0.06
RDS(ON), NORMALIZED
1.2
0.04
TA = 125oC
1
0.02
0.8 TA = 25oC
0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)
50 100
VDS = -5.0V VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
TA = -55oC 25oC
10
40
-ID, DRAIN CURRENT (A)
125oC TA = 125oC
1
30
25oC
0.1
20 -55oC
0.01
10
0.001
0 0.0001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)
10 2000
VDS = -5V f = 1 MHz
ID = -8.8A
-VGS, GATE-SOURCE VOLTAGE (V)
1800
-10V VGS = 0 V
8 1600
CAPACITANCE (pF)
-15V 1400
CISS
6 1200
1000
4 800
600
2 400
COSS
200 CRSS
0 0
0 4 8 12 16 20 24 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)
100 50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT 100µs SINGLE PULSE
1ms RθJA = 135°C/W
40 TA = 25°C
-ID, DRAIN CURRENT (A)
10 10ms
100ms
1s 30
10s
1
DC
20
VGS = -10V
SINGLE PULSE
0.1
RθJA = 135oC/W 10
TA = 25oC
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
D = 0.5
r(t), NORMALIZED EFFECTIVE
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I2