FDMS6681Z

MOSFET– POWERTRENCH),
P-Channel
-30 V, -122 A, 3.2 mW
General Description
The FDMS6681Z has been designed to minimize losses in load www.onsemi.com
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest rDS(on) and ESD
protection.
D 5 4 G
Features
• Max rDS(on) = 3.2 mW at VGS = −10 V, ID = −21.1 A D 6 3 S

• Max rDS(on) = 5.0 mW at VGS = −4.5 V, ID = −15.7 A D 7 2 S

• Advanced Package and Silicon Combination for Low rDS(on)
D 8 1 S
• HBM ESD Protection Level of 8 kV Typical (Note 3)
• MSL1 Robust Package Design
• RoHS Compliant
Pin 1
Applications S
SS
G
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management D
DD
D
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Top Bottom
Symbol Parameter Ratings Unit
VDS Drain to Source Voltage −30 V Power 56 (PQFN8)
CASE 483AE
VGS Gate to Source Voltage ±25 V
ID Drain Current − Continuous TC = 25°C (Note 5) −122 A
MARKING DIAGRAM
− Continuous TC = 100°C −77
(Note 5)
$Y&Z&3&K
− Continuous TA = 25°C −21.1
FDMS
(Note 1a)
6681Z
− Pulsed (Note 4) −600
PD Power dissipation TC = 25°C 73 W
Power dissipation TA = 25°C (Note 1a) 2.5 $Y = ON Semiconductor Logo
TJ, Operating and Storage Junction Temperature −55 to °C &Z = Assembly Plant Code
TSTG Range +150 &3 = Numeric Date Code
&K = Lot Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be FDMS6681Z = Specific Device Code
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS See detailed ordering and shipping information on page 2
Symbol Parameter Ratings Unit of this data sheet.

RqJC Thermal Resistance, Junction to Case 1.7 °C/W

RqJA Thermal Resistance, Junction to Ambient 50
(Note 1a)

© Semiconductor Components Industries, LLC, 2009 1 Publication Order Number:

May, 2019 − Rev. 3 FDMS6681Z/D
 FDMS6681Z

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking Device Package Shipping{
FDMS6681Z FDMS6681Z Power 56 3000 Units/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = −250 mA, VGS = 0 V −30 V

DBV DSS Breakdown Voltage Temperature ID = −250 mA, referenced to 25°C 20 mV/°C
Coefficient
DT J
IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V −1 mA
IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 mA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = −250 mA −1 −1.7 −3 V

DV GS(th) Gate to Source Threshold Voltage ID = −250 mA, referenced to 25°C −7 mV/°C
Temperature Coefficient
DT J
rDS(on) Static Drain to Source On Resistance VGS = −10 V, ID = −22.1 A 2.7 3.2 mW
VGS = −4.5 V, ID = −15.7 A 4.0 5.0
VGS = −10 V, ID = −22.1 A, 3.9 5.0
TJ = 125°C

gFS Forward Transconductance VDD = −10 V, ID = −22.1 A 143 S

DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −15 V, VGS = 0 V, f = 1MHz 7803 10380 pF
Coss Output Capacitance 1540 2050
Crss Reverse Transfer Capacitance 1345 2020
SWITCHING CHARACTERISTICS
td(on) Turn*On Delay Time VDD = −15 V, ID = −22.1 A, 15 24 ns
VGS = −10 V, RGEN = 6 W
tr Rise Time 38 61
td(off) Turn*Off Delay Time 260 416
tf Fall Time 197 316
Qg Total Gate Charge VGS = 0 V to −10 V 172 241 nC
Qg Total Gate Charge VGS = 0 V to −5 V 97 136
VDD = −15 V,
Qgs Gate to Source Charge iD = −22.1 A 22
Qgd Gate to Drain “Miller” Charge 46
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = −2.1 A (Note 2) 0.68 1.2 V
VGS = 0 V, IS = −22.1 A (Note 2) 0.79 1.25
trr Reverse Recovery Time IF = −22.1 A, di/dt = 100 A/ms 44 71 ns
Qrr Reverse Recovery Charge 39 63 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FDMS6681Z

NOTES:
1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.

a) 50°C/W when mounted on b) 125°C/W when mounted on

a 1 in2 pad of 2 oz copper. a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Pulsed ID please refer to Figure 12 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal
electro−mechanical application board design.

TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted

90 5
PULSE DURATION = 80 ms
VGS = −3.5 V VGS = −3 V DUTY CYCLE = 0.5% MAX
Normalized Drain to Source
75 4
−ID, Drain Current [A]

VGS = −4 V
On−Resistance
VGS = −3.5 V
60 VGS = −4.5 V
3
VGS = −10 V
45 VGS = −4.5 V
VGS = −4 V
2
30
VGS = −3 V
1
15 VGS = −10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0 0
0 1 2 3 0 15 30 45 60 75 90
−VDS, Drain to Source Voltage [V] −ID, Drain Current [A]

Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance

vs. Drain Current and Gate Voltage
1.6 12
ID = −22.1 A
PULSE DURATION = 80 ms
VGS = −10 V
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source

rDS(on) ,Drain to Source

1.4
On−Resistance [mW]

9
ID = −22.1 A
On−Resistance

1.2
6
TJ = 125°C
1.0

3
0.8 TJ = 25°C

0.6 0
−75 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, Junction Temperature [5C] −VGS, Gate to Source Voltage [V]

Figure 3. Normalized On Resistance Figure 4. On−Resistance vs. Gate

vs. Junction Temperature to Source Voltage

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 FDMS6681Z

TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted (continued)

90 100
PULSE DURATION = 80 ms VGS = 0 V

−IS, Reverse Drain Current [A]

DUTY CYCLE = 0.5% MAX
75 10
VDS = −5 V
−ID, Drain Current [A]

60 TJ = 150°C
1
TJ = 150°C
45 TJ = 25°C

0.1
30
TJ = 25°C

0.01
15 TJ = −55°C TJ = −55°C

0 0.001
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 1.2
−VGS, Gate to Source Voltage [V] −VSD, Body Diode Forward Voltage [V]

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward

Voltage vs. Source Current

10 20000
ID = −22.1 A
−VGS, Gate to Source Voltage [V]

8 10000
VDD = −10 V
Capacitance [pF]

Ciss

6
VDD = −15 V

4
VDD = −20 V Coss

f = 1 MHz
2 Crss
1000 VGS = 0 V

0 600
0 50 100 150 200 0.1 1 10 30
Qg, Gate Charge [nC] −VDS, Drain to Source Voltage [V]

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain

to Source Voltage

100 140

50 120
−IAS, Avalanche Current [A]

TJ = 25°C VGS = −10 V

−ID, Drain Current [A]

100

80
TJ = 100°C

60 VGS = −4.5 V

TJ = 125°C 40

20
RqJC = 1.7°C/W
1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
tAV, Time in Avalanche [ms] TC, Case Temperature [5C]

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs. Case Temperature

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 FDMS6681Z

TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted (continued)

10−4 1000
VGS = 0 V 10 us
Ig, Gate Leakage Current [A]

10−5
100

−ID, Drain Current [A]

100 us

10−6 TJ = 150°C
THIS AREA IS 1 ms
10 LIMITED BY rDS(on)
10−7 10 ms
TJ = 25°C
DC
1 SINGLE PULSE
10−8 TJ = MAX RATED
CURVE BENT TO RqJC = 1.7°C/W
MEASURE DATA TC = 25°C
10−9 0.1
0 5 10 15 20 25 30 0.1 1 10 80
VGS, Gate to Source Voltage [V] −VDS, Drain to Source Voltage [V]

Figure 11. Igss vs. Vgss Figure 12. Forward Bias Safe Operating Area

100000
SINGLE PULSE
P(PK), Peak Transient Power [W]

RqJC = 1.7°C/W
TC = 25°C
10000

1000

100

10
10−5 10−4 10−3 10−2 10−1 1
t, Pulse Width [s]

Figure 13. Single Pulse Maximum Power Dissipation

2
1 DUTY CYCLE−DESCENDING ORDER
Transient Thermal Resistance
r(t), Normalized Effective

D = 0.5
0.2
0.1 PDM
0.1 0.05
0.02
0.01 t1
t2

0.01 NOTES:
ZqJC (t) = r(t) × RqJC
SINGLE PULSE RqJC = 1.7°C/W
PEAK TJ = PDM × ZqJC (t) + TC
Duty cycle, D = t1/t2
0.001
10−5 10−4 10−3 10−2 10−1 1
t, Pulse Width [s]

Figure 14. Transient Thermal Response Curve

POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in
the United States and/or other countries.

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

PQFN8 5X6, 1.27P

CASE 483AE
ISSUE C
DATE 21 JAN 2022

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13655G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: PQFN8 5X6, 1.27P PAGE 1 OF 1

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