FDMC7692 N-Channel Power Trench® MOSFET

FDMC7692
N-Channel Power Trench® MOSFETGeneral Description
30 V, 13.3 A, 8.5 m: This N-Channel MOSFET is produced using ON
Features Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
„ Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.3 A device is well suited for Power Management and load switching
„ Max rDS(on) = 11.5 m: at VGS = 4.5 V, ID = 10.6 A applications common in Notebook Computers and Portable
Battery Packs.
„ High performance technology for extremely low rDS(on)
Application
„ Termination is Lead-free and RoHS Compliant
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook

Top Bottom

Pin 1
G D 5 4 G
S
S
S D 6 3 S

D D 7 2 S
D
D D 8 1 S
D

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16
ID -Continuous TA = 25 °C (Note 1a) 13.3 A
-Pulsed 40
EAS Single Pulse Avalanche Energy (Note 3) 58 mJ
Power Dissipation TC = 25 °C 29
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RTJC Thermal Resistance, Junction to Case 4.3
°C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC7692 FDMC7692 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2011 Semiconductor Components Industries, LLC. 1 Publication Order Number:

October-2017, Rev.3 FDMC7692/D
 FDMC7692 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V
'BVDSS Breakdown Voltage Temperature
ID = 250 PA, referenced to 25 °C 16 mV/°C
'TJ Coefficient
VDS = 24 V, VGS = 0 V 1
IDSS Zero Gate Voltage Drain Current PA
TJ = 125 °C 250
IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 3.0 V
'VGS(th) Gate to Source Threshold Voltage
ID = 250 PA, referenced to 25 °C -6 mV/°C
'TJ Temperature Coefficient
VGS = 10 V, ID = 13.3 A 7.2 8.5
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 10.6 A 9.5 11.5 m:
VGS = 10 V, ID = 13.3 A, TJ = 125 °C 9.5 12.0
gFS Forward Transconductance VDD = 5 V, ID = 13.3 A 60 S

Dynamic Characteristics
Ciss Input Capacitance 1260 1680 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 480 635 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 65 100 pF
Rg Gate Resistance 0.9 2.4 :

Switching Characteristics
td(on) Turn-On Delay Time 9 18 ns
tr Rise Time VDD = 15 V, ID = 13.3 A, 4 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 : 21 33 ns
tf Fall Time 3 10 ns
Total Gate Charge VGS = 0 V to 10 V 21 29 nC
Qg(TOT)
Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V 10 14 nC
Qgs Total Gate Charge ID = 13.3 A 5 nC
Qgd Gate to Drain “Miller” Charge 3 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 13.3 A (Note 2) 0.86 1.2
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 1.9 A (Note 2) 0.75 1.2
trr Reverse Recovery Time 24 38 ns
IF = 13.3 A, di/dt = 100 A/Ps
Qrr Reverse Recovery Charge 7 14 nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.

a. 53 °C/W when mounted on b.125 °C/W when mounted on

a 1 in2 pad of 2 oz copper a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, I AS = 21 A.

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 FDMC7692 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
40 4.0
PULSE DURATION = 80 Ps

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VGS = 10 V 3.5
30 VGS = 6 V VGS = 3.5 V
ID, DRAIN CURRENT (A)

VGS = 4.5 V 3.0

NORMALIZED
VGS = 4 V
VGS = 3.5 V 2.5
20 VGS = 4 V
2.0
VGS = 4.5 V
10 1.5
VGS = 3 V
1.0
VGS = 6 V VGS = 10 V
0 0.5
0 1 2 3 4 0 10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 40
ID = 13.3 A ID = 13.3 A PULSE DURATION = 80 Ps
DRAIN TO SOURCE ON-RESISTANCE

SOURCE ON-RESISTANCE (m:)

VGS = 10 V DUTY CYCLE = 0.5% MAX
1.4
rDS(on), DRAIN TO 30
NORMALIZED

1.2
20
1.0
TJ = 125 oC
10
0.8
TJ = 25 oC
0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

40 60
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX 10
30
ID, DRAIN CURRENT (A)

VDS = 5 V
1
TJ = 150 oC
TJ = 150 oC TJ = 25 oC
20
0.1
TJ = 25 oC

10
0.01 TJ = -55 oC

TJ = -55 oC
0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

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 FDMC7692 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10 3000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 13.3 A
Ciss
8

CAPACITANCE (pF)
1000
VDD = 10 V
6 Coss
VDD = 15 V VDD = 20 V
4
100
2 Crss
f = 1 MHz
VGS = 0 V
0 20
0 3 6 9 12 15 18 21 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

20 50
IAS, AVALANCHE CURRENT (A)

40

ID, DRAIN CURRENT (A)

10

TJ = 25 oC 30
VGS = 10 V

TJ = 100 oC 20
VGS = 4.5 V
TJ = 125 oC
10 Limited by Package
o
RTJC = 5.0 C/W
1 0
0.01 0.1 1 10 30 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

50 1000
P(PK), PEAK TRANSIENT POWER (W)

VGS = 10 V
100 Ps
10
ID, DRAIN CURRENT (A)

1 ms 100

1 10 ms
THIS AREA IS
100 ms
LIMITED BY rDS(on) 10
SINGLE PULSE 1s
0.1 SINGLE PULSE
TJ = MAX RATED
10 s
RTJA = 125 C/W o RTJA = 125 oC/W
DC 1
TA = 25 oC TA = 25 oC
0.01 0.5
-4 -3 -2 -1
0.01 0.1 1 10 100 10 10 10 10 1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

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 FDMC7692 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

2
r(t), NORMALIZED EFFECTIVE TRANSIENT

DUTY CYCLE-DESCENDING ORDER

1
D = 0.5
THERMAL RESISTANCE

0.2
0.1
0.05 PDM
0.1
0.02
0.01
t1
t2
NOTES:
0.01
ZθJA (t) = r(t) x RθJA
RθJA = 125 °C/W
SINGLE PULSE Peak TJ = PDM x ZθJA (t) + TA
Duty Cycle, D = t1 / t2
0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

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