FDMC6679AZ P-Channel PowerTrench® MOSFET

November 2013

FDMC6679AZ
P-Channel PowerTrench® MOSFET
-30 V, -20 A, 10 mΩ
Features General Description
„ Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
„ Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A package technologies have been combined to offer the lowest
„ HBM ESD protection level of 8 kV typical(note 3) rDS(on) and ESD protection.

„ Extended VGSS range (-25 V) for battery applications Applications

„ High performance trench technology for extremely low rDS(on)
„ Load Switch in Notebook and Server
„ High power and current handling capability
„ Notebook Battery Pack Power Management
„ Termination is Lead-free and RoHS Compliant

Top Bottom

Pin 1 D 5 4 G
G
S
S D 6 3 S
S

D 7 2 S
D
D
D D 8 1 S
D

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
Drain Current -Continuous (Package limited) TC = 25 °C -20
-Continuous (Silicon limited) TC = 25 °C -51
ID A
-Continuous TA = 25 °C (Note 1a) -11.5
-Pulsed -32
Power Dissipation TC = 25 °C 41
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 3.0
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC6679AZ FDMC6679AZ MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMC6679AZ Rev.D3
 FDMC6679AZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -30 V
ΔBVDSS Breakdown Voltage Temperature
ID = -250 μA, referenced to 25 °C 29 mV/°C
ΔTJ Coefficient
VDS = -24 V, -1
IDSS Zero Gate Voltage Drain Current μA
VGS = 0 V, TJ = 125 °C -100
IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 μA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -1 -1.8 -3 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = -250 μA, referenced to 25 °C -7 mV/°C
ΔTJ Temperature Coefficient
VGS = -10 V, ID = -11.5 A 8.6 10
rDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -8.5 A 12 18 mΩ
VGS = -10 V, ID = -11.5 A, TJ = 125 °C 12 15
gFS Forward Transconductance VDS = -5 V, ID = -11.5 A 46 S

Dynamic Characteristics
Ciss Input Capacitance 2985 3970 pF
VDS = -15 V, VGS = 0 V,
Coss Output Capacitance 570 755 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 500 750 pF

Switching Characteristics
td(on) Turn-On Delay Time 12 21 ns
tr Rise Time VDD = -15 V, ID = -11.5 A, 14 25 ns
td(off) Turn-Off Delay Time VGS = -10 V, RGEN = 6 Ω 63 100 ns
tf Fall Time 46 73 ns
Qg Total Gate Charge VGS = 0 V to -10 V 65 91 nC
Qg Total Gate Charge VGS = 0 V to -5 V VDD = -15 V, 37 52 nC
Qgs Gate to Source Charge ID = -11.5 A 8.7 nC
Qgd Gate to Drain “Miller” Charge 17 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = -11.5 A (Note 2) 0.83 1.30
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = -1.6 A (Note 2) 0.71 1.20
trr Reverse Recovery Time 31 49 ns
IF = -11.5 A, di/dt = 100 A/μs
Qrr Reverse Recovery Charge 16 28 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 53 °C/W when mounted on b.125 °C/W when mounted on

a 1 in2 pad of 2 oz copper a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.

©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDMC6679AZ Rev.D3
 FDMC6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

32 4
VGS = -10 V PULSE DURATION = 80 μs

DRAIN TO SOURCE ON-RESISTANCE

VGS = -6 V VGS = -3 V
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
-ID, DRAIN CURRENT (A)

24
3
VGS = -4 V

NORMALIZED
VGS = -3.5 V VGS = -3.5 V
16
VGS = -3 V 2 VGS = -4.5 V
VGS = -4 V

PULSE DURATION = 80 μs 1
DUTY CYCLE = 0.5% MAX VGS = -6 V VGS = -10 V
0
0 1 2 3 0 8 16 24 32
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs. Drain Current and Gate Voltage

1.6 50
ID = -11.5 A PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

ID = -11.5 A
SOURCE ON-RESISTANCE (mΩ)
VGS = -10 V DUTY CYCLE = 0.5% MAX
1.4 40
rDS(on), DRAIN TO
NORMALIZED

1.2 30

1.0 20
TJ = 125 oC

0.8 10
TJ = 25 oC

0.6 0
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs. Gate to

vs. Junction Temperature Source Voltage

32 40
PULSE DURATION = 80 μs
-IS, REVERSE DRAIN CURRENT (A)

VGS = 0 V
DUTY CYCLE = 0.5% MAX 10
-ID, DRAIN CURRENT (A)

24 VDS = -5 V
1 TJ = 150 oC
TJ = 25 oC
16
0.1
TJ = 25 oC TJ = -55 oC

8
0.01 TJ = -55 oC
TJ = 150 oC

0 0.001
1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs. Source Current

©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMC6679AZ Rev.D3
 FDMC6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

10 10000
-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -11.5 A

8 Ciss

CAPACITANCE (pF)
VDD = -15 V
6
VDD = -10 V VDD = -20 V
1000 Coss
4

Crss
2 f = 1 MHz
VGS = 0 V

0 100
0 10 20 30 40 50 60 70 0.1 1 10 30
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain

to Source Voltage

50 60
-IAS, AVALANCHE CURRENT (A)

-ID, DRAIN CURRENT (A) 50

TJ = 25 oC
40
VGS = -10 V
30

TJ = 100 oC VGS = -4.5 V

20
TJ = 125 oC

10 Limited by Package
o
RθJC = 3.0 C/W
1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs. Case Temperature

100 10
-2

VGS = 0 V
-Ig, GATE LEAKAGE CURRENT (A)

-3
10
-ID, DRAIN CURRENT (A)

10
1 ms
-4
10
10 ms
1 THIS AREA IS 10
-5

LIMITED BY rDS(on) 100 ms TJ = 125 oC

-6
SINGLE PULSE 10
0.1 1s TJ = 25 oC
TJ = MAX RATED
10 s
RθJA = 125 oC/W 10
-7
DC
TA = 25 oC
0.01 -8
0.01 0.1 1 10 100 10
0 5 10 15 20 25 30 35
-VDS, DRAIN to SOURCE VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe Figure 12. Igss vs. Vgss
Operating Area

©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMC6679AZ Rev.D3
 FDMC6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

1000
VGS = -10 V
P(PK), PEAK TRANSIENT POWER (W)

100

10

SINGLE PULSE
o
RθJA = 125 C/W
1
o
TA = 25 C
0.3
-3 -2 -1
10 10 10 1 10 100 1000
t, PULSE WIDTH (sec)

Figure 13. Single Pulse Maximum Power Dissipation

2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
NORMALIZED THERMAL

0.1
IMPEDANCE, ZθJA

0.05
0.1 0.02
PDM
0.01

t1

0.01 t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.001
-3 -2 -1
10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Junction-to-Ambient Transient Thermal Response Curve

©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMC6679AZ Rev.D3
 FDMC6679AZ P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout

3.30+0.10 A
0.10 C (3.40)
B 2.37
2X 8 5
0.45(4X)

2.152
(1.70)
3.30+0.10
(0.402)
KEEP OUT
AREA
(0.648)
0.70(4X)
PIN#1 QUADRANT
0.10 C 1
TOP VIEW 4
0.65 0.42(8X)
2X
1.95

0.8 MAX
0.10 C
(0.20) RECOMMENDED LAND PATTERN

0.08 C 0.05
0.00

SEATING SIDE VIEW

PLANE

2.27+0.05
PIN #1 IDENT
(0.79) A. DOES NOT CONFORM TO JEDEC
1 4 REGISTRATION MO-229
0.50+0.05
B. DIMENSIONS ARE IN MILLIMETERS.
(4X)
(1.15) (0.35) C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. LAND PATTERN RECOMMENDATION IS
R0.15
2.00+0.05 BASED ON FSC DESIGN ONLY
0.30+0.05
(3X) E. DRAWING FILE NAME : MKT-MLP08Srev2
F. FAIRCHILD SEMICONDUCTOR
8 5
0.65 0.35+0.05 (8X)
0.10 C A B
1.95 0.05 C

BOTTOM VIEW

©2009 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMC6679AZ Rev.D3
 FDMC6679AZ P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ® tm
®*
®
BitSiC™ Global Power ResourceSM PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
MicroFET™ SMART START™
® μSerDes™
MicroPak™ Solutions for Your Success™
®
Fairchild ® MicroPak2™ SPM
Fairchild Semiconductor® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
® mWSaver ®
SuperSOT™-3 Ultra FRFET™
FACT
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC® SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR ®
SupreMOS ® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2009 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDMC6679AZ Rev.D3