Analog Power AMD540CE

P & N-Channel 40-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY
high cell density trench process to provide low VDS (V) rDS(on) m(Ω) ID (A)
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC 46 @ VGS = 4.5V 28
40
converters and power management in portable and 36 @ VGS = 10V 33
battery-powered products such as computers, 48 @ VGS = -4.5V -28
printers, PCMCIA cards, cellular and cordless -40
telephones. 38 @ VGS = -10V -33

D1 S
2
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe G G
DPAK saves board space
1 2

• Fast switching speed S

1 D2
• High performance trench technology S1 G1 D S2 G2 N-Channel MOSFET P-Channel MOSFET

ESD Protected
2000V
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 40 -40
V
Gate-Source Voltage VGS 20 -20
a o
Continuous Drain Current TA=25 C ID 33 -33
b
A
Pulsed Drain Current IDM ±40 ±40
a
Continuous Source Current (Diode Conduction) IS 30 -30 A
a o
Power Dissipation TA=25 C PD 50 50 W
o
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 -55 to 175 C

THERMAL RESISTANCE RATINGS

Parameter Symbol Maximum Units
a RθJA o
Maximum Junction-to-Ambient 50 C/W
o
Maximum Junction-to-Case RθJC 3.0 C/W

Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature

1 Publication Order Number:

PRELIMINARY DS-AMD540CE_F
Analog Power AMD540CE

o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Ch Min Typ Max Unit
Static
VGS = VDS, ID = 250 uA N 1
Gate-Threshold Voltage VGS(th) V
VGS = VDS, ID = -250 uA P -1
VGS = -20 V, VDS = 0 V P ±100
Gate-Body Leakage IGSS nA
VGS = 20 V, VDS = 0 V N ±100
VDS = -24 V, VGS = 0 V P -1
Zero Gate Voltage Drain Current IDSS uA
VDS = 24 V, VGS = 0 V N 1
VDS = 5 V, VGS = 10 V N 20
On-State Drain CurrentA ID(on) A
VDS = -5 V, VGS = -10 V P -50
VGS = 10 V, ID = 33 A 36
N
VGS = 4.5 V, ID = 28 A 46
Drain-Source On-ResistanceA rDS(on)
38 mΩ
VGS = -10 V, ID = -33 A
P
VGS = -4.5 V, ID = -28 A 48
VDS = 15 V, ID = 33 A N 40
Forward TranconductanceA gfs
VDS = -15 V, ID = -33 A P 31 S
Dynamic
N 12
Total Gate Charge Qg P 13
N-Channel VDS=15V, VGS=4.5V,
N 3.3
Gate-Source Charge Qgs ID=33A P-Channel P 5.8 nC
VDS=-15V, VGS=-4.5V, ID=-33A N 4.5
Gate-Drain Charge Qgd
P 12
Switching
N 20
Turn-On Delay Time td(on) N-Chaneel P 15
VDD=15V, VGS=10V, ID=1A , N 9
Rise Time tr RGEN=25Ω, P 16
P-Channel N 70 nS
Turn-Off Delay Time td(off) VDD=-15V, VGS=-10V, ID=-1A P 62
RGEN=15Ω N 20
Fall-Time tf P 46

Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.

2 Publication Order Number:

PRELIMINARY DS-AMD540CE_F
Analog Power AMD540CE

Typical Electrical Characteristics (N-Channel)

50
60 25oC
45
10V 6V T A = -55oC
50 40
125oC

ID - Drain Current (A)

35
4V
ID - Drain Current (A)

40
30

30 25

20
20
15
3V
10 10

5
0
0
0 0.5 1 1.5 2 2.5 3 3 4 5 6 7 8 9
V GS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

0.2
Ciss, Coss and Crss measurement of AM4541C Die1
0.18 NMOS
0.16
900
rDS(ON) - On-resistance(ohm)

0.14 800
0.12 700
Capacitance (nC)

0.1 4.5V 600

500 Ciss
0.08
400 Coss
0.06 Crss
300
0.04 200
10V
0.02 100
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20
Vds(V)
ID - Drain Current (A)

On Resistance vs. Drain Current Capacitance

10 1.8
VD= 15V
ID= 6.5A VGS = 10V

8 1.6
r DS(ON) - On-Resistance (Ohm)

1.4
6
(Normalized)
VGS(V)

1.2
4
1

2
0.8

0 0.6
0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150
QG, Total Gate Charge (nC) o
T J - Junction Temperature ( C)

Gate Charge On-Resistance vs. Junction Temperature

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PRELIMINARY DS-AMD540CE_F
Analog Power AMD540CE

Typical Electrical Characteristics (N-Channel)

0.05
100 0.045
0.04

rDS(on) - On-Resistance (Ohm)

10
0.035
IS - Source CURRENT (A)

1 0.03
T A = 125oC 0.025
0.1
0.02
25oC
0.01 0.015
0.01
0.001
0.005
0.0001 0
0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage(V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

50
SINGLE PULSE
RqJA = 125oC/W
4.7 TA = 25oC
P(pk), PEAK TRANSIENT POWER (W)

ID = 250µA 40
4.5
4.3
4.1 30
V GS(th) Variance (V)

3.9
3.7
20
3.5
3.3
3.1
10
2.9
2.7 0
-50 -25 0 25 50 75 100 125 150
o
0.001 0.01 0.1 1 10 100
TJ - Temperature ( C)
t1, TIME (SEC)

Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

1
D = 0.5

0.2 Rq J A (t) = r(t) + Rq J A

0.1 Rq J A = 1 2 5 o C/W
0.1
0.0
P(p k)
0.02
0.01 t1
0.01 t2

TJ - TA = P * Rq J A(t )
S INGLE P ULS E Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIM E (s e c )
Figure 11. Transient Thermal Response Curve

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PRELIMINARY DS-AMD540CE_F
 Analog Power AMD540CE

Typical Electrical Characteristics (P-Channel)

60
60
6V through 10V 4.5V

50
50
4V
IDS Drain Current (A)

ID Drain Current (A)

40
40
25C
30 3.5V 30

20
20
3V

10 10

0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6
VDS(V) VGS Gate to Source Voltage (V)

Output Characteristics Transfer Characteristics

2400
0.1 2200 Ciss
4.5V
0.09 2000

0.08 1800
Capacitance (pF)
RDS(ON) resistance ( Ω)

1600
0.07 6V
1400
0.06
1200
0.05 1000
10V Coss
0.04 800

0.03 600
400
0.02 Crs
200
0.01
0
0 0 5 10 15 20
0 10 20 30 40 50 60
VDS (V)
ID Drain Current (A)
On Resistance Vs Vgs Voltage Capacitance

1.6
10
VD= 10V
VGS = - 10V
1.5
ID= 10A
rDS(ON) - On-Resistance (Ohm)

8 1.4
1.3
(Normalized)

6 1.2
VGS (V)

1.1
4 1
0.9
2 0.8
0.7
0 0.6
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
QG, Total Gate Charge (nC) o
TJ - Junction Temperature ( C)

Gate Charge On-Resistance vs. Junction Temperature

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Analog Power AMD540CE

Typical Electrical Characteristics (P-Channel)

0.1
0.09
Id=10A
100 0.08

RDS(ON) Resistance (Ω)

0.07
10
0.06
IS - Source Current (A)

T A = 125oC
1
0.05
25oC
0.1 0.04
0.03
0.01
0.02
0.001
0.01
0.0001 0
0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10
V SD - Source-to-Drain Voltage (V)
VGS Gate to Source Voltage(V)

Source-Drain Diode Forward Voltage On-Resistance with Gate to Source Voltage

50
SINGLE PULSE
RqJA = 125C/W
P(pk), PEAK TRANSIENT POWER (W)
2
ID = -250µA 40 TA = 25C
1.9
1.8
1.7 30
V GS(th) Variance (V)

1.6
1.5
20
1.4
1.3
1.2 10

1.1
1 0
-50 -25 0 25 50 75 100 125 150
0.001 0.01 0.1 1 10 100 1000
o
TJ - Temperature ( C)
t1, TIME (sec)

Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation

Normalized Thermal Transient Junction to Ambient

1
D =0.5
0.2 Rq J A(t) = r(t) + Rq J A
0.1 Rq J A = 1 2 5 o C/W
0.1 0.05
P (pk)
0.02
t1
0.01 t2
0.01
TJ - TA = P * Rq J A(t)
S INGLE P ULS E Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , TIM E (s ec)
Figure 11. Transient Thermal Response Curve

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Analog Power AMD540CE

7 Publication Order Number:

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