FDPC8016S PowerTrench® Power Clip

October 2013

FDPC8016S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features General Description
Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a
„ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
„ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
Q2: N-Channel
SyncFETTM (Q2) have been designed to provide optimal power
„ Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A efficiency.
„ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A
Applications
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses „ Computing

„ MOSFET integration enables optimum layout for lower circuit „ Communications

inductance and reduced switch node ringing „ General Purpose Point of Load
„ RoHS Compliant

PIN1 PIN1 PAD10

V+(HSD)

HSG LSG HSG LSG

GR SW GR SW
SW
PAD9
GND(LSS) SW
V+ V+ SW

V+ SW V+ SW

Top Power Clip 5X6 Bottom

Pin Name Description Pin Name Description Pin Name Description

1 HSG High Side Gate 3,4,10 V+(HSD) High Side Drain 8 LSG Low Side Gate
2 GR Gate Return 5,6,7 SW Switching Node, Low Side Drain 9 GND(LSS) Low Side Source

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Q1 Q2 Units
VDS Drain to Source Voltage 25Note5 25 V
VGS Gate to Source Voltage ±12 ±12 V
Drain Current -Continuous TC = 25 °C 60 100
ID -Continuous TA = 25 °C 20Note1a 35Note1b A
-Pulsed TA = 25 °C (Note 4) 75 140
EAS Single Pulse Avalanche Energy (Note 3) 73 216 mJ
Power Dissipation for Single Operation TC = 25 °C 21 42
PD W
Power Dissipation for Single Operation TA = 25 °C 2.1Note1a 2.3 Note1b
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 6.0 3.0
RθJA Thermal Resistance, Junction to Ambient 60Note1a 55Note1b °C/W
RθJA Thermal Resistance, Junction to Ambient 130Note1c 120Note1d

©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
05OD/15OD FDPC8016S Power Clip 56 13 ” 12 mm 3000 units

Electrical Characteristics TJ = 25 °C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
ID = 250 μA, VGS = 0 V Q1 25
BVDSS Drain to Source Breakdown Voltage V
ID = 1 mA, VGS = 0 V Q2 25
ΔBVDSS Breakdown Voltage Temperature ID = 250 μA, referenced to 25 °C Q1 24
mV/°C
ΔTJ Coefficient ID = 10 mA, referenced to 25 °C Q2 28
VDS = 20 V, VGS = 0 V Q1 1 μA
IDSS Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V Q2 500 μA
VGS = 12 V/-8 V, VDS= 0 V Q1 ±100 nA
IGSS Gate to Source Leakage Current
VGS = 12 V/-8 V, VDS= 0 V Q2 ±100 nA

On Characteristics
VGS = VDS, ID = 250 μA Q1 0.8 1.3 2.5
VGS(th) Gate to Source Threshold Voltage V
VGS = VDS, ID = 1 mA Q2 1.1 1.5 2.5
ΔVGS(th) Gate to Source Threshold Voltage ID = 250 μA, referenced to 25 °C Q1 -4
mV/°C
ΔTJ Temperature Coefficient ID = 10 mA, referenced to 25 °C Q2 -3
VGS = 10V, ID = 20 A 2.8 3.8
VGS = 4.5 V, ID = 18 A Q1 3.4 4.7
VGS = 10 V, ID = 20 A,TJ =125 °C 3.9 5.3
rDS(on) Drain to Source On Resistance mΩ
VGS = 10V, ID = 35 A 1.1 1.4
VGS = 4.5 V, ID = 32 A Q2 1.3 1.7
VGS = 10 V, ID = 35 A ,TJ =125 °C 1.5 1.9
VDS = 5 V, ID = 20 A Q1 182
gFS Forward Transconductance S
VDS = 5 V, ID = 35 A Q2 241

Dynamic Characteristics
Q1 1695 2375
Ciss Input Capacitance Q1: pF
Q2 4715 6600
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1 495 710
Coss Output Capacitance pF
Q2 1195 1675
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ Q1 54 100
Crss Reverse Transfer Capacitance pF
Q2 159 290
Q1 0.1 0.4 1.2
Rg Gate Resistance Ω
Q2 0.1 0.5 1.5

Switching Characteristics
Q1 8 16
td(on) Turn-On Delay Time ns
Q2 13 24
Q1:
Q1 2 10
tr Rise Time VDD = 13 V, ID = 20 A, RGEN = 6 Ω ns
Q2 4 10

Q2: Q1 24 38
td(off) Turn-Off Delay Time ns
Q2 38 61
VDD = 13 V, ID = 35 A, RGEN = 6 Ω
Q1 2 10
tf Fall Time ns
Q2 3 10
Q1 25 35
Qg Total Gate Charge VGS = 0 V to 10 V nC
Q1 Q2 67 94
V = 13 V, ID Q1 11 16
Qg Total Gate Charge VGS = 0 V to 4.5 V DD nC
= 20 A Q2 31 44
Q2 Q1 3.4
Qgs Gate to Source Gate Charge VDD = 13 V, ID nC
Q2 10
= 35 A Q1 2.2
Qgd Gate to Drain “Miller” Charge nC
Q2 6.3

©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

VGS = 0 V, IS = 20 A (Note 2) Q1 0.8 1.2
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 35 A (Note 2) Q2 0.8 1.2
Q1 Q1 25 40
trr Reverse Recovery Time ns
IF = 20 A, di/dt = 100 A/μs Q2 33 53
Q2 Q1 10 20
Qrr Reverse Recovery Charge nC
IF = 35 A, di/dt = 200 A/μs Q2 31 50
Notes:

1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

b. 55 °C/W when mounted on

a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
a 1 in2 pad of 2 oz copper

SF
SS
SS
SF

DS
DF
DS
DF

G
G

c. 130 °C/W when mounted on a d. 120 °C/W when mounted on a

minimum pad of 2 oz copper minimum pad of 2 oz copper
SF
SS
DS
DF
G
SF
SS
DF
DS
G

2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 216 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 39 A.
4. Pulsed Id limited by junction temperature, td<=10 us. Please refer to SOA curve for more details.
5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.

©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

75 5
VGS = 10 V PULSE DURATION = 80 μs

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5% MAX
60 4
ID, DRAIN CURRENT (A)

VGS = 2.5 V
VGS = 4.5 V

NORMALIZED
45 3
VGS = 3.5 V
VGS = 3 V
30 2 VGS = 3 V
VGS = 2.5 V

15 1
PULSE DURATION = 80 μs
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
DUTY CYCLE = 0.5% MAX
0 0
0.0 0.2 0.4 0.6 0.8 1.0 0 15 30 45 60 75
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs. Drain Current and Gate Voltage

1.6 12
ID = 20 A PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

1.5
SOURCE ON-RESISTANCE (mΩ)
VGS = 10 V DUTY CYCLE = 0.5% MAX
1.4 9
rDS(on), DRAIN TO

ID = 20 A
1.3
NORMALIZED

1.2
6
1.1
TJ = 125 oC
1.0
3
0.9
TJ = 25 oC
0.8
0.7 0
-75 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs. Gate to

vs. Junction Temperature Source Voltage

75 100
PULSE DURATION = 80 μs
IS, REVERSE DRAIN CURRENT (A)

VDS = 5 V VGS = 0 V
DUTY CYCLE = 0.5% MAX
60 10
ID, DRAIN CURRENT (A)

45 1
TJ = 150 oC
TJ = 150 oC TJ = 25 oC
30 0.1
TJ = 25 oC

15 0.01
TJ = -55 oC
TJ = -55 oC

0 0.001
1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs. Source Current

©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

10 10000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 20 A

8
VDD = 13 V

CAPACITANCE (pF)
1000 Ciss
6
VDD = 10 V
Coss
4
VDD = 15 V 100

2 f = 1 MHz
VGS = 0 V Crss

0 10
0 6 12 18 24 30 0.1 1 10 25
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain

to Source Voltage

30 70

60
IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

TJ = 25 oC
50
10 VGS = 10 V
40
TJ = 100 oC
VGS = 4.5 V
30

20
TJ = 125 oC o
RθJC = 6.0 C/W
10

1 0
0.001 0.01 0.1 1 10 100 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs. Case Temperature

500 5000
P(PK), PEAK TRANSIENT POWER (W)

SINGLE PULSE
100 o
RθJC = 6.0 C/W
ID, DRAIN CURRENT (A)

10 μs 1000 o
TC = 25 C

10 100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms 100
SINGLE PULSE 10 ms
1 TJ = MAX RATED DC
RθJC = 6.0 oC/W
CURVE BENT TO
TC = 25 oC MEASURED DATA
0.1 10
-5 -4 -3 -2 -1
0.1 1 10 80 10 10 10 10 10 1
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted

2
r(t), NORMALIZED EFFECTIVE TRANSIENT

DUTY CYCLE-DESCENDING ORDER

1
D = 0.5
THERMAL RESISTANCE

0.2 PDM
0.1
0.05
0.02
0.1 t1
0.01
t2

NOTES:
SINGLE PULSE ZθJC (t) = r(t) x RθJc
RθJC = 6.0 oC/W
DUTY FACTOR: D = t1/ t2
0.01 TJ -TC = PDM x ZθJC(t)

0.005
-5 -4 -3 -2 -1
10 10 10 10 10 1
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Case Transient Thermal Response Curve

©2013 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted

140 6.0

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10 V PULSE DURATION = 80 μs
120 VGS = 2.5 V DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
ID, DRAIN CURRENT (A)

100 4.5
VGS = 3.5 V

NORMALIZED
80 VGS = 3 V
3.0
60 VGS = 2.5 V VGS = 3 V

40
1.5
20 PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX VGS = 3.5 V VGS = 4.5 V VGS = 10 V
0 0.0
0.0 0.2 0.4 0.6 0.8 0 20 40 60 80 100 120 140
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 14. On- Region Characteristics Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage

1.6 5
ID = 35 A PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

1.5
SOURCE ON-RESISTANCE (mΩ)
VGS = 10 V DUTY CYCLE = 0.5% MAX
4
1.4
ID = 35 A
rDS(on), DRAIN TO

1.3
NORMALIZED

3
1.2
1.1
2
1.0 TJ = 125 oC

0.9 1
0.8 TJ = 25 oC
0.7 0
-75 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 16. Normalized On-Resistance Figure 17. On-Resistance vs. Gate to

vs. Junction Temperature Source Voltage

140 200
100
IS, REVERSE DRAIN CURRENT (A)

VDS = 5 V VGS = 0 V
120
TJ = 25 oC 10
ID, DRAIN CURRENT (A)

100
TJ = 125 oC
TJ = 125 oC
80 1
TJ = -55 oC
60 TJ = 25 oC
0.1
40
TJ = -55 oC
0.01
20 PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0 0.001
1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode

Forward Voltage vs. Source Current

©2013 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted

10 10000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 35 A
8 Ciss
VDD = 13 V

CAPACITANCE (pF)
1000
6
Coss
VDD = 10 V

4
VDD = 15 V 100
f = 1 MHz Crss
2
VGS = 0 V

0 10
0 20 40 60 80 0.1 1 10 25
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain
to Source Voltage

50 160

140
IAS, AVALANCHE CURRENT (A)

TJ = 25 oC ID, DRAIN CURRENT (A)

120
VGS = 10 V
100
10
TJ = 100 oC 80
Limited by Package
60
o
RθJC = 3.0 C/W VGS = 4.5 V
TJ = 125 oC 40

20

1 0
0.001 0.01 0.1 1 10 100 1000 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)

Figure 22. Unclamped Inductive Figure 23. Maximum Continuous Drain

Switching Capability Current vs. Case Temperature

1000 10000
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)

o
RθJC = 3.0 C/W
10 μs
ID, DRAIN CURRENT (A)

100 TC = 25 C
o
1000
100 μs
10 THIS AREA IS
LIMITED BY rDS(on) 1 ms
10 ms 100
SINGLE PULSE
1 TJ = MAX RATED DC
RθJC = 3.0 oC/W
CURVE BENT TO
TC = 25 oC MEASURED DATA
0.1 10
-5 -4 -3 -2 -1
0.1 1 10 80 10 10 10 10 10 1
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 24. Forward Bias Safe Figure 25. Single Pulse Maximum
Operating Area Power Dissipation

©2013 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted

2
r(t), NORMALIZED EFFECTIVE TRANSIENT

DUTY CYCLE-DESCENDING ORDER

1
D = 0.5
THERMAL RESISTANCE

0.2
0.1 PDM
0.05
0.1 0.02
0.01
t1
t2

NOTES:
ZθJC (t) = r(t) x RθJc
0.01 SINGLE PULSE RθJC = 3.0 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
0.003
-5 -4 -3 -2 -1
10 10 10 10 10 1
t, RECTANGULAR PULSE DURATION (sec)

Figure 26. Junction-to-Case Transient Thermal Response Curve

©2013 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Typical Characteristics (continued)

SyncFETTM Schottky body diode

Characteristics

Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8016S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.

-2
40 10

IDSS, REVERSE LEAKAGE CURRENT (A)

35
30 -3 TJ = 125 oC
10
25 TJ = 100 oC
CURRENT (A)

20 -4
di / dt = 200 A/μS 10
15
10
-5
5 10
TJ = 25 oC
0
-6
-5 10
50 100 150 200 250 300 350 400 0 5 10 15 20 25
TIME (ns) VDS, REVERSE VOLTAGE (V)

Figure 27. FDPC8016S SyncFETTM Body Figure 28. SyncFETTM Body Diode Reverse
Diode Reverse Recovery Characteristic Leakage vs. Drain-source Voltage

©2013 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
Dimensional Outline and Pad Layout

5.00
4.56
4.20
5.10 A
0.10 C 4.90
2X 1.27
PKG
B 4 3 2 1
CL
3.30
4 1
2.48
2.08
1.01

6.60
6.10 0.00 0.40
PKG CL 5.90 2.65 0.83
1.43
1.98
2.48
0.82
3.30

PIN #1 5 8 0.10 C 5 6 7 8
2X
INDICATOR TOP VIEW 0.75

SEE

1.01
1.53

0.00

1.08
1.48
1.53
2.29
DETAIL A
RECOMMENDED LAND PATTERN

SIDE VIEW
0.10 C A B
3.15±.05 0.05 C
3.81
1.27
0.51

5 6 7 8

0.65±.05 1.57±.05
NOTES: UNLESS OTHERWISE SPECIFIED
0.65±.05
2.46±.05
1.37±.05 A) DOES NOT FULLY CONFORM TO
0.53±.05 JEDEC REGISTRATION, MO-229,
0.91±.05 DATED 11/2001.
B) ALL DIMENSIONS ARE IN
0.48±.05
0.49±.05 MILLIMETERS.
4 3 2 1
C) DIMENSIONS DO NOT INCLUDE
0.51±.05 BURRS OR MOLD FLASH. MOLD
3.90±.05
FLASH OR BURRS DOES NOT
4.22±.05
EXCEED 0.10MM.
5.00±.05
D) DIMENSIONING AND TOLERANCING
BOTTOM VIEW PER ASME Y14.5M-1994.
E) DRAWING FILE NAME:
0.10 C

0.08 C
C
0.80 0.30 0.05
0.70 0.20 0.00
SEATING
PLANE
(SCALE: 2X)

©2013 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com

FDPC8016S Rev.C7
 FDPC8016S PowerTrench® Power Clip
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ® tm
®*
®
BitSiC™ Global Power ResourceSM PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
MicroFET™ SMART START™
® μSerDes™
MicroPak™ Solutions for Your Success™
®
Fairchild ® MicroPak2™ SPM
Fairchild Semiconductor® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
® mWSaver ®
SuperSOT™-3 Ultra FRFET™
FACT
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC® SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR ®
SupreMOS ® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

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FDPC8016S Rev.C7