FDD5353 N-Channel Power Trench® MOSFET

April 2015

FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features General Description
 Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
 Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
been especially tailored to minimize the on-state resistance and
 100% UIL Tested yet maintain superior switching performance.
 RoHS Compliant Application
 Inverter
 Synchronous rectifier
 Primary switch

D
G
G
S
D
TO-P-2A52
K
(T O -252)
S

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 60 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous TC = 25°C 50
ID -Continuous TA = 25°C (Note 1a) 11.5 A
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 253 mJ
Power Dissipation TC = 25°C 69
PD W
Power Dissipation TA = 25°C (Note 1a) 3.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.8
°C/W
RJA Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDD5353 FDD5353 D-PAK (TO-252) 13’’ 16mm 2500 units

©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD5353 Rev.1.4
 FDD5353 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V 60 V
BVDSS Breakdown Voltage Temperature
ID = 250A, referenced to 25°C 77 mV/°C
TJ Coefficient
IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 48V, 1 A
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A 1.0 1.8 3.0 V
VGS(th) Gate to Source Threshold Voltage
ID = 250A, referenced to 25°C -8 mV/°C
TJ Temperature Coefficient
VGS = 10V, ID = 10.7A 10.1 12.3
rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 9.5A 12.1 15.4 m
VGS = 10V, ID = 10.7A, TJ = 125°C 16.7 20.3
gFS Forward Transconductance VDD = 5V, ID = 10.7A 41 S

Dynamic Characteristics
Ciss Input Capacitance 2420 3215 pF
VDS = 30V, VGS = 0V,
Coss Output Capacitance 215 285 pF
f = 1MHz
Crss Reverse Transfer Capacitance 120 180 pF
Rg Gate Resistance f = 1MHz 1.7 

Switching Characteristics
td(on) Turn-On Delay Time 11 20 ns
tr Rise Time VDD = 30V, ID = 10.7A, 6 11 ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 6 36 58 ns
tf Fall Time 4 10 ns
Qg Total Gate Charge VGS = 0V to 10V 46 65 nC
VDD = 30V,
Qg Total Gate Charge VGS = 0V to 4.5V 23 32 nC
ID = 10.7A
Qgs Gate to Source Charge 7 nC
Qgd Gate to Drain “Miller” Charge 9 nC

Drain-Source Diode Characteristics

VGS = 0V, IS = 10.7A (Note 2) 0.8 1.3
VSD Source to Drain Diode Forward Voltage V
VGS = 0V, IS = 2.6A (Note 2) 0.7 1.2
trr Reverse Recovery Time 28 45 ns
IF = 10.7A, di/dt = 100A/s
Qrr Reverse Recovery Charge 21 34 nC
Notes:
1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RJCis guaranteed by design while RJA is determined by the user’s board design.

a) 40°C/W when mounted on a b) 96°C/W when mounted

1 in2 pad of 2 oz copper on a minimum pad.

2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
3: EAS of 253mJ is based on starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V. 100% test at L = 0.1mH, IAS = 41A.

©2013 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDD5353 Rev.1.4
 FDD5353 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
100 3.0

DRAIN TO SOURCE ON-RESISTANCE

VGS = 10V
VGS = 3V VGS = 3.5V
80 VGS = 4.5V 2.5
ID, DRAIN CURRENT (A)

VGS = 4V
VGS = 4V

NORMALIZED
60 2.0
VGS = 3.5V VGS = 4.5V
40 1.5
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
20 1.0 VGS = 10V
VGS = 3V PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
0 0.5
0 1 2 3 4 5 0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

2.0 40
PULSE DURATION = 80s
DRAIN TO SOURCE ON-RESISTANCE

ID = 10.7A
1.8

SOURCE ON-RESISTANCE (m)

VGS = 10V DUTY CYCLE = 0.5%MAX
32
1.6 rDS(on), DRAIN TO
ID = 10.7A

1.4
NORMALIZED

24
1.2 TJ = 125oC
16
1.0

0.8
8 TJ = 25oC
0.6

0.4 0
-75 -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

100 200
PULSE DURATION = 80s 100
IS, REVERSE DRAIN CURRENT (A)

VGS = 0V
DUTY CYCLE = 0.5%MAX
80
10
ID, DRAIN CURRENT (A)

VDS = 5V
TJ = 150oC
60
1 TJ = 25oC
TJ = 150oC
40 0.1
TJ = 25oC
20 0.01 TJ = -55oC
TJ = -55oC
0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2013 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDD5353 Rev.1.4
 FDD5353 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 10000
VGS, GATE TO SOURCE VOLTAGE(V)

ID = 10.7A
VDD = 20V Ciss
8

CAPACITANCE (pF)
1000
6 Coss
VDD = 30V

4
VDD = 40V 100
Crss
2 f = 1MHz
VGS = 0V

0 10
0 10 20 30 40 50 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

100 60

50
IAS, AVALANCHE CURRENT(A)

ID, DRAIN CURRENT (A)

VGS = 10V
40
TJ = 25oC Limited by Package
10 30
VGS = 4.5V
20
TJ = 125oC o
RJC = 1.8 C/W
10

1 0
0.01 0.1 1 10 100 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

5
200 10
P(PK), PEAK TRANSIENT POWER (W)

100
VGS = 10V
ID, DRAIN CURRENT (A)

4
10
100µs
SINGLE PULSE
10
RJC = 1.8oC/W
3
THIS AREA IS 10 TC = 25oC
LIMITED BY rDS(on) 1ms
1 SINGLE PULSE 2
TJ = MAX RATED 10ms 10
o
RJC = 1.8 C/W DC
TC = 25oC
0.1 10
-6 -5 -4 -3 -2 -1
1 10 100 200 10 10 10 10 10 10 1
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDD5353 Rev.1.4
 FDD5353 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZJC

0.1
0.1 0.05
0.02 PDM
0.01

0.01 t1
t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o
RJC = 1.8 C/W PEAK TJ = PDM x ZJc x RJc + TC
0.001
5E-4
-6 -5 -4 -3 -2 -1
10 10 10 10 10 10 1
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

2
1 DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL

D = 0.5
0.1
IMPEDANCE, ZJA

0.2
0.1 PDM
0.05
0.01 0.02
0.01
t1
t2
SINGLE PULSE NOTES:
0.001 o
DUTY FACTOR: D = t1/t2
RJA = 96 C/W
PEAK TJ = PDM x ZJA x RJA + TA
(Note 1b)

0.0001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Transient Thermal Response Curve

©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDD5353 Rev.1.4
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No Identification Needed
Obsolete
Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Not In Production
The datasheet is for reference information only.
Rev. I74

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