University of Houston

College of Technology
Computer Engineering Technology and Electrical Power
Technology

ELET 2105 – Semiconductor Devices and Circuits Laboratory

Experiment 1
Series and Parallel Diode Configuration

Laboratory Report written by:

© – 2017 University of Houston, College of Technology ELET Labs

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 Table of Contents

1 Purpose...............................................................................................................................................4

2 Equipment and Components..........................................................................................................4

3 Pre-Lab...............................................................................................................................................4

4 Laboratory procedures.....................................................................................................................4

4.1 Diode Forward Drop measurement.........................................................................................4

4.2 Series Configuration..................................................................................................................5

4.3 Parallel Configuration................................................................................................................7

4.4 Positive Logic AND Gate...........................................................................................................9

5 Knowledge Evaluation:..................................................................................................................11

6 References:.......................................................................................................................................12

1 Purpose
Primary object of this experiment is to learn various diode characteristics, analyze networks
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with diodes in a series or parallel configuration as well as calculate and measure the circuit
voltages of various diode circuits. In final section, team have to develop one of the application
using diode. This experiment also introduces the equipments that we are going to use in this
lab such as the Digital Multimeter (DMM), Function Generator, Digital Signal Oscilloscope
(DSO) and DC Power Supply.

2 Equipment and Components

 Digital Multi-meter (DMM)
 DC Power Supply
 Resistors: 1KΩ, 2.2KΩ
 Diodes : Germanium Diode – 1N34A, Silicon Diode – 1N4007

3 Pre-Lab
You do not have pre-lab assignment for this experiment.

4 Laboratory procedures
4.1 Diode Forward Drop measurement
Use DMM diode test feature to find out measured value of diode VD (Ge) .288 V
forward voltage drop. If the diode-checking capability or curve VD (Si) .537 V
tracer is not available, assume V T = 0.7 V for Silicon and V T = 0.3 V for Germanium.

Figure 1 - Firing Voltage characteristics for Silicon and Germanium Diode

4.2 Series Configuration

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 a. Record the measured value of resistor in the network shown in figure 2 and
construct the same.

Figure 2 – Simple R-D Network R 2.165 k Ω

b. Using the firing voltages of the VT (Theoretical) 4.3 V

silicon and germanium diodes as VO (Calculated) 4.26 V
measured in Part 4.1 and the ID (Calculated) = VO/R 1.96 mA
measured resistance for R, calculate the theoretical values of V O and ID.

c.Measure the voltages V D and V O , VD (Measured) .61 V

using the DMM. Calculate the
VO (Measured) 4.26 V
current I D from measured values.
Compare with the results of Part ID (Measured) = VO/R 1.96 mA
2(b).

d. Record the measured value of R1 (Measured) 2.165 k Ω

resistor in the network shown in R2 (Measured) 1.012 k Ω
figure 3 and construct the same.

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 Figure 3 – Diode network with two resistors

e. Using the measured values of VD VT (Theoretical) 4.3 V

and the measured resistance values VO (Calculated) 1.34 V
for R1 and R2, calculate the theoretical ID (Calculated) = VO/R2 1.32 mA
values of VO and ID.

f. Measure the voltages VD and VO, VD (Measured) .59 V

using the DMM. Calculate the current VO (Measured) 1.35 V
ID from measured values. Compare ID (Measured) = VO/ R2 .58 A
with the results of Part e.

g. Reverse the silicon diode in Fig. 3.4 VT 5 V

and calculate the theoretical values of
VO (Calculated) 0 V
VD, V0, and ID.
ID (Calculated) = VO/ R2 0 A

h. Measure VD and VO for the conditions VD (Measured) 4.87 V

of Part 2(g). Calculate the current I D VO (Measured) 0 V
from measured values. Compare ID (Measured) = VO/R2 0 A
with the results of Part g.

i. Record the measured value of resistor in the network shown in figure 4 and
construct the same.

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 R 2.165 k Ω

Figure 4 – Network with two diodes in series

j. Using the firing voltages of the V1 (Calculated) 1 V
silicon and germanium diodes as VO (Calculated) 4 V
measured in Part 1, calculate the
theoretical values of V 1 (across both ID (Calculated) = VO/R 1.8 mA
diodes), VO, and ID

k. Measure V 1 and V O , and compare V1 (Measured) 1.08 V

to the results of Part j. Calculate VO (Measured) 3.78 V
the current ID from measured values ID (Measured) = VO/R 1.7 mA
and compare to the level of Part j.

4.3 Parallel Configuration

a. Record the measured value of R 2.165 k Ω
resistor in the network shown in
figure 5 and construct the same.

Figure 5 – Network with two diode in parallel

b.Using the firing voltages of the silicon VO (Calculated) .3 V

and germanium diodes as measured VR (Calculated) 4.7 V
in Part 4.1, calculate the theoretical
values of V O and V R.

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 c. Measure VO and VR and compare VO (Measured) 492 mV
with the results of Part b. VR (Measured) 4.37 V

d.Record the measured value of resistor in the network shown in figure 6 and
construct the same.

R1 (Measured) 2.165 k Ω
R2 (Measured) 1.012 k Ω

Figure 6 – Network with resistor and diode in parallel

e. Using firing angle of silicon diode as

measured in Part 4.1, calculate the VD (Theoretical) .7 V
VR1 (Calculated) 4.3 V
theoretical values of VO, VR1 and ID.
ID (Calculated) 1.95 mA

f. Measure VO and VR1. Using the VO (Measured) .59 V

measured value of VO and VR1, VR1 (Measured) 4.27 V
calculate IR2 and IR1 and determine ID. ID (Measured) 1.97 mA
Compare to the results od Part 3

g. Record the measured value of resistor in the network shown in figure 7 and
construct the same.

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 R 2.165 k Ω

Figure 7 – Network with two diodes in antiparallel

h. Using the firing voltage of the silicon

VO (Measured) .7 V
and germanium diode as measured
VR (Measured) 4.3 V
in part 4.1, calculate the theoretical
values of VO and VR

i. Measure VO and VR and compare with VO (Measured) .607 V

the result of part h. VR (Measured) 4.26 V

4.4 Positive Logic AND Gate

a. Record the measured value of resistor in the network shown in figure 7 and
construct the same.

Figure 8 – Application of diode network as Positive Logic AND Gate

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 R 2.165 k Ω

b. Using the VT for both diodes as measured in Part 4.1, calculate the theoretical value of
VO
VO (Calculated) 4.3 V
c. Measure VO and compare to Part b.
VO (Measured) 4.2 V

d. Apply 5V to each input terminal of figure 8 and calculate theoretical value of V O

VO (Calculated) 0 V

e. Measure VO and compare to the results of part d

VO (Measured) 0 V

f. Set both inputs to zero in figure 8 (by connecting both inputs to circuit ground) and
calculate the theoretical value of Vo.
VO (Calculated) 3.6 V

g. Measure Vo and compare to the results of part f

VO (Measured) 4.23 V

h. Verify above result with following Truth Table of Positive Logic AND Gate –
Input 1 Input 2 Output
0 0 0
0 1 0
1 0 0
1 1 1

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5 Knowledge Evaluation:
Answer the following questions; highlight the answer with Red -
1. What is desirable property of a diode?
a. Maximum Reverse Voltage Blocking Capacity
b. Maximum Forward Voltage Drop
c. Minimum Reverse Current
d. Minimum Forward Current
e. Both a & c
f. Both b & d
2. If we are measuring resistance of a diode, what does a high resistance in forward and
reverse biased diode indicates?
(Hint - Reading in DMM is Over Range)
a. A Good Diode
b. An Open Diode
c. Open DMM Probe
d. Both b & c
3. If junction temperature of a diode increases, forward voltage drop of the diode:
a. Increases
b. Decreases
c. Decreases if operated within its operating temperature range and fused if exceeds.
d. Remains stable
4. Forward DC current carrying capacity of diode:
a. Increases with increasing temperature
b. Decreases with increasing temperature
c. Decreases with decreasing temperature
d. Temperature has no effect on diode’s forward current carrying capacity.
5. If DC current in the diode network shown in figure 2 is 100mA which of the diode should
we use? (Hint – See datasheet in References)
a. 1N4007
b. 1N34A
c. Anyone can be used
d. None of the above
6. Which parameter of diode dictates AC voltage-blocking capability of diode?
a. PIV (Peak Inverse Voltage / Peak Reverse Voltage)
b. VF (Forward Voltage Drop)
c. Maximum DC blocking voltage
d. Both a & c

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6 References:
1. Fundamental of Analog Circuit – Thomas L Floyd, David M. Buchla

2. Microelectronic Circuits - Adel Sedra, Kenneth C. Smith

3. The Art of Electronics – Thomas Hayes, Paul Horowitz

4. Introductory Circuit Analysis – Robert Boylestad

5. Datasheet – 1N4007 : https://www.vishay.com/docs/88503/1n4001.pdf

1N34A : http://www.nteinc.com/specs/original/1N34A.pdf

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