STUDENT KIT LAB

MODULE
Program: CEEE260 Semester: 2
Ownership: Discipline of Electronics
Date
Version: 1.0 March 2022
Issued:
Course
ELECTRONICS ENGINEERING TECHNOLOGY
Name:
Course Code: EEE452
Mode of
✔ Face to Face Virtual
Delivery:

P-N JUNCTION DIODE CHARACTERISTICS

Authors
Prepared by: Ts. Dr. Ili Shairah Abdul Halim Date: Mar 2022
Ts. Dr. Ili Shairah Abdul Halim
1st Revision: Date: Oct 2022
Tuan Norjihan Tuan Yaakub
2nd Revision: Date:
 ASSESSMENT DETAILS
Module: L1
Experiment
P-N Junction Diode Characteristics
Title:

At the end of the course, students should be able to:

CO1: Analyze the electrical and electronics characteristics basic

operating concepts of semiconductor devices, BJT and FET with its
Course application circuits. (C4)
Outcomes: CO2: Perform the understanding of electronic circuits through
experiments to provide valid conclusions. (P4)
CO2: Display proficiency in the understanding of electronic circuits
using appropriate software tools and equipment in conducting
experiments. (P4)

Upon completion of this experiment, students should have the

Module
following: MO1. Ability to plot I-V characteristics of the diode.
Outcomes:
MO2. Ability to find knee voltage for the diode.
MO3. Ability to determine the DC and AC resistance of the diode.

Perform the following tasks:

Instructions:
1) Submit the report in a group as instructed by Instructor.
2) The group shall not be more than five (5) persons.

1) Do not connect power to a circuit until the circuit is finished and

you have carefully checked your work.
2) Do not turn on a circuit while power is applied.
Safety 3) If you smell anything burning, immediately disconnect the
Instructions: power and examine your circuit to discover what went wrong.
4) Be careful around large capacitors; they can continue to hold
voltage long after they are disconnected from power.
5) Keep your work area dry.
1. THEORETICAL BACKGROUND

1.1 P-N junction I-V characteristics

Figure 1: I-V Characteristic for Ge, Si and GaAs diodes [1]

The general characteristic of a semiconductor diode is shown in Figure 1. In these curves, the
center of the knee (known as 𝑉𝐾) of the curve is about 0.3 V for Ge, 0.7 V for Si, and 1.2 V for
GaAs. This I-V characteristic is referred to as the Shockley equation for forward and reverse bias
regions:
𝑉𝐷
𝐼𝐷 = 𝐼𝑆(𝑒𝑛𝑉𝑇 −1 )
where:

 𝐼𝑠 is the reverse saturation current.

 𝑉𝐷 is the applied forward-bias voltage across the diode.
 𝑛 is an ideality factor, which is a function of the operating conditions and physical
construction; it ranges between 1 and 2 depending on a wide variety of factors.

The voltage 𝑉𝑇 in the Shockley equation is called the thermal voltage and is determined by:

𝑉𝑇 = 𝑘𝑇𝐾
𝑞
where:
 𝑘 is Boltzmann’s constant = 1.38 × 10−23 𝐽/𝐾
 𝑇𝐾 is the absolute temperature in kelvins = 273 + the temperature in °𝐶
 𝑞 is the magnitude of electronic charge 1.6 × 10−19 𝐶
1.2 Resistance Levels
The slope in the I-V curve indicates the resistive behavior. A resistor is added in the equivalent
circuit in Figure 2 to represent this behavior. There are three types of resistance:

 DC (static) resistance
 AC (dynamic) resistance
 Average AC resistance

Figure 2: Components in diode equivalent circuit [1]

ID Qpt
ID Qpt ∆ID
∆ID

VD

∆VD ∆VD
(a) (b) (c)

Figure 3: Graphical determination for diode (a) DC resistance (b) AC resistance, and (c)
Average AC resistance

1.2.1 DC Resistance
DC resistance is defined as a point on the I-V characteristic. For a specific applied DC voltage
(𝑉𝐷) the diode has a specific current (𝐼𝐷) and a specific resistance (𝑅𝐷) as shown in Figure 3(a).
Hence 𝑅𝐷 can be calculated by:
𝑉𝐷
𝑅𝐷 =
𝐼𝐷
1.2.2 AC Resistance
AC resistance is defined by a tangent line at the Q-point as shown in Figure 3(b). In equation
form:

Δ𝑉𝑑
𝑟𝑑 =
Δ𝐼𝑑
Where Δ represents a finite change in the quantity.

In the forward bias region, the resistance depends on the amount of current (𝐼𝐷) in the diode:

26𝑚𝑉
𝑟𝑑′ = + 𝑟𝐵
𝐼𝐷

 The voltage across the diode is fairly constant (26 mV for 25°𝐶).
 𝑟𝐵 ranges from a typical 0.1Ω for high power devices to 2 Ω for low power and general-
purpose diodes. In some cases, 𝑟𝐵 can be ignored.
In the reverse bias region, the resistance is effectively infinite. The diode acts like an open.

1.2.3 Average AC Resistance

Average AC resistance is defined by a straight line between limits of operation. It can be
calculated using the current and voltage values for two points on the diode characteristic curve as
shown in Figure 3(c). In equation form:
Δ𝑉𝑑
𝑟𝑎𝑣 = |
Δ𝐼 𝑝𝑡.𝑡𝑜 𝑝𝑡.
𝑑

2. PRE-LAB WORK

NOTE: Students/Group Leader has to get your Instructor to approve all your PRE-LAB work
before commencing the experiment. Submit the pre-lab work together with the report.

Read this document, especially the Experimental Work section. Search the internet and grasp as
much as possible the material before going to the lab. Students should understand the basic BJT
characteristics by answering the following questions:

1) How does the depletion region form in the PN junction?

2) Define what is maximum forward current and maximum reverse voltage?
3) Determine the maximum forward current and maximum reverse voltage for the diode
used in the experiment. Refer to diode datasheet.
4) How does the PN-junction diode act as a switch?
5) What is the effect of temperature in the diode reverse characteristics?
3. EQUIPMENT

Component Value / Quantity Breadboard 1

Type
220 Ω 1 Equipment
Resistor 1 kΩ 1 Oscilloscope
Diode 1N4002 2 Multimeter
LED Red 1 DC Power Supply

4. EXPERIMENTAL WORK

4.1 Silicon diode characteristic

R1

1 kΩ +
ID
Vin 1N4002 VD

Figure 4

4.1.1 Forward Biased Condition

a) Connect the circuit as shown in Figure 4 using silicon P-N Junction diode.
b) Vary 𝑉𝑖𝑛 in steps of 0.1V up to 5V and note down the corresponding readings of
𝐼𝐷 and 𝑉𝐷. Please do not exceed the ratings of the diode! This may lead to
damaging the diode. Check the diode datasheet for diode ratings. Step size is
not fixed because of the nonlinear curve and vary the X-axis variable (e.g., if
output variation increases, then decrease the input step size).
c) Tabulate the forward currents obtained for different forward voltages in Table 1.

R1

1 kΩ +
ID
Vin 1N4002 VD

Figure 5
 4.1.2 Reverse Biased Condition
a) Connect the circuit as shown in Figure 5 using silicon P-N Junction diode.
b) Vary 𝑉𝑖𝑛 in steps of 0.1V up to 5V and note down the corresponding readings of 𝐼𝐷
and 𝑉𝐷. Please do not exceed the ratings of the diode! This may lead to
damaging the diode. Check the diode datasheet for diode ratings. Step size is
not fixed because of the nonlinear curve and vary the X-axis variable (e.g., if
output variation increases, then decrease the input step size).
c) Tabulate the reverse currents obtained for different reverse voltages in Table
2Table 1.
4.1.3 Plot the 𝐼𝐷 − 𝑉𝐷 characteristic graph with the results from both Table 1 and Table 2.
4.1.4 Calculate the DC, AC and average AC resistance levels.

4.2 LED characteristic

R1

220 Ω +
ID
Vin LED VD

Figure 6

4.2.1 Forward Biased Condition

a) Connect the circuit as shown in Figure 6 using Light Emitting Diode (LED).
b) Vary 𝑉𝑖𝑛 gradually in steps of 0.2V up to 5V and note down the corresponding
readings of 𝐼𝐿𝐸𝐷 and 𝑉𝐿𝐸𝐷. Please do not exceed the ratings of the LED! This
may lead to damaging the LED. Check the LED datasheet for LED ratings.
Step size is not fixed because of the nonlinear curve and vary the X-axis variable
(e.g., if output variation increases, then decrease the input step size).
c) Tabulate the forward currents obtained for different forward voltages in Table 3.

R1

220 Ω +
ID
Vin LED VD

Figure 7
4.2.2 Reverse Biased Condition
a) Connect the circuit as shown in Figure 7 using Light Emitting Diode (LED).
b) Vary 𝑉𝑖𝑛 gradually in steps of 0.2V up to 5V and note down the corresponding
readings of 𝐼𝐿𝐸𝐷 and 𝑉𝐿𝐸𝐷. Please do not exceed the ratings of the LED! This
may lead to damaging the LED. Check the LED datasheet for LED ratings.
Step size is not fixed because of the nonlinear curve and vary the X-axis variable
(e.g., if output variation increases, then decrease the input step size).
c) Tabulate the reverse currents obtained for different reverse voltages in Table 4.
4.2.3 Plot the 𝐼𝐿𝐸𝐷 and 𝑉𝐿𝐸𝐷. characteristic graph with the results from both Table 3 and
Table 4.
4.2.4 Calculate the DC, AC and average AC resistance levels.
5. RESULTS

5.1 Silicon diode characteristic

Table 1
Forward voltage across the Forward current across the
𝑉𝑖𝑛
diode 𝑉𝐷 (V) diode 𝐼𝐷 (A)
0.1V 0.13V 0.1mA
0.2V 0.22V 0.2mA
0.3V 0.36V 0.2mA
0.4V 0.43V 0.2mA
0.5V 0.46V 0.2mA
0.6V 0.50V 0.3mA
0.7V 0.52V 0.4mA
0.9V 0.54V 0.5mA
1.1V 0.56V 0.7mA

Table 2
 Reverse voltage across the Reverse current across the
𝑉𝑖𝑛 diode 𝑉𝐷 (V) diode 𝐼𝐷 (A)
0.1V - 0.11V 0.1mA
0.2V -0.22V 0.1mA
0.3V -0.30V 0.1mA
0.4V -0.48V 0.1mA
0.5V -0.52V 0.1mA
0.6V -0.65V 0.1mA
0.7V -0.74V 0.1mA
0.9V -1.0V 0.1mA
1.1V -1.07V 0.1mA

From the graph:

Knee voltage (𝑉𝐾) = 0.50v

DC forward resistance = 1666ohm

AC forward resistance = 200ohm
Average AC forward resistance = 150ohm
DC reverse resistance = 0ohm
AC reverse resistance = 0ohm
Average AC reverse resistance = 0ohm

DC Forward Resistor Rd =Vd/Id

=0.50v/0.1mA
=1666mA
AC Forward Resistor
=Vmin =0.46V ,Idmin =0.2Ma
=Vmax =0.56V,Idmax =0.7Ma
=0.56v-0.46v=0.1v
=0.7v-0.2v=0.5vmA
=0.1/0.5=200ohm

=Kav=0.56v-0.50v=0.06v
=0.7mA-0.3mA=0.4mA
=0.06/0.4mA=150ohm

5.2 LED characteristic

Table 3
Forward voltage across Forward current across
𝑉𝑖𝑛
the the
diode 𝑉𝐿𝐸𝐷 (V) diode 𝐼𝐿𝐸𝐷 (A)
1.0 V 1.06V 0.2mA
1.6V 1.60V 0.2mA
1.7V 1.69V 0.3mA
1.8V 1.78V 0.6mA
1.9V 1.79V 0.9mA
2.0V 1.82V 0.12mA
2.1V 1.84V 0.15mA
2.2V 1.86V 0.20mA
2.3V 1.87V 0.24mA
2.4V 1.88V 2.4mA
 Table 4
Reverse voltage across Reverse current
𝑉𝑖𝑛
the diode 𝑉𝐿𝐸𝐷 (V) across the
diode 𝐼𝐿𝐸𝐷 (A)
1.0 V -1.05V 0.26mA
1.6V -1.59V 0.26mA
1.7V -1.71V 0.26mA
1.8V -1.84V 0.26mA
1.9V -1.87V 0.26mA
2.0V -1.97V 0.26mA
2.1V -2.08V 0.26mA
2.2V -2.18V 0.26mA
2.3V -2.26V 0.26mA
2.4V -2.42V 0.26mA

From the graph:

Knee voltage (𝑉𝐾) = 1.78v
DC forward resistance = 5.93Kohm
AC forward resistance = 47.61ohm
Average AC forward resistance = 90.47ohm
DC reverse resistance = 0ohm
AC reverse resistance = 0ohm
Average AC reverse resistance = 0ohm
Dc Forward Resistence =Rd=Vd/Id

=1.78v/0.3mA
=5.93Kohm

Ac forward resistance =Vmin=1.78v,Idmin =0.3mA

=Vmax=1.88v,Idmax =2.4mA
=1.88v-1.78v=0.1v
=2.4mA-0.3mA=2.1mA
=0.1mA/2.1mA=47.61ohm

=Rav =1.88v-1.69v =0.19v

=2.4mA-0.3mA =2.1mA
=0.19v/2.1mA =90 .47ohm
 6. DISCUSSIONS

1. What factors affected the accuracy of your measurements in this experiment for both
forward-biased and reverse-biased cases?
From the expreriment,the setup for forward-biased are the p-side of diode are stick to the positive
side and N-side are permanently to the negative side of battery.Next,the external voltage are sent
across the P-N junction of diode.
2. Calculate the maximum power dissipation of the diode in Table 1 and LED in Table 3.
Table 1 = 0.392W Table 3 = 4.512W
3. Explain how to identify the cathode of an unmarked diode using a multimeter.
Select diode mode and connect positive test lead which is in red color to the one side of
diode .Connect negative test lead which is in black color to another terminal of diode. If the
digital multimeter reading is from 50 , it is indicating the diode forward voltage drop as 650
milli-volts. Then the lead connected to the RED wire is anode.

7. QUIZ

A set of questions will be presented by the instructor, and students are expected to answer all
questions before concluding the experiment. This could be in the form of a written or oral quiz.

8. CONCLUSION

In the conclusion,we have learned that diode are a semiconductor component which is apartially conductor
that like conductor or an insulator based on the output voltage,current,tempreture or environment.From the
analysis that we are made,both forward and reverse bias can arrive at one fact PN Junction diode only
conduct xurrent in one direction for an example just look at forward bias.During forward bias,diode
conducts current with increase voltage.From my opinion,The result an be improve by using the proper clip
instead of using a normal alligator clips.This is because students will get the exactly result when using a
proper clips.

9. REFERENCES

1. Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 11th
Edition, Pearson 2013, ISBN: 9780132622264
2. Hernando Lautaro Fernandez-Canque, Analog Electronics Applications: Fundamentals
of Design and Analysis, CRC Press 2017, ISBN: 9781498714952
3. Albert Malvino, David J. Bates, Electronic Principles, 8th Edition, McGraw-Hill
Education 2016, ISBN: 9780073373881
4. Thomas L. Floyd, Electronic Devices, 9th Edition, Prentice Hall 2012, ISBN:
9780132549851

END