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NVBG030N120M3S
Features
• Typ. RDS(on) = 29 mW @ VGS = 18 V Gate (Pin 1)
Single Pulse Drain−to−Source Avalanche EAS 220 mJ NVBG030N120M3S D2PAK−7L 800 / Tape
Energy (IL(pk) = 21 A, L = 1 mH) (Note 5) & Reel
Maximum Temperature for Soldering (10 s) TL 270 °C †For information on tape and reel specifications,
including part orientation and tape sizes, please
Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specification
device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D.
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. The maximum current rating is based on typical RDS(on) performance.
4. Repetitive rating, limited by max junction temperature.
5. EAS of 220 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 21 A,
VDD = 100 V, VGS = 18 V.
THERMAL CHARACTERISTICS
Parameter Symbol Max Unit
Junction−to−Case − Steady State (Note 2) RqJC 0.43 °C/W
Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 40
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 1200 V − − 100 mA
Gate−to−Source Leakage Current IGSS VGS = +22/−10 V, VDS = 0 V − − ±1 mA
ON−STATE CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 15 mA 2.04 2.4 4.4 V
Recommended Gate Voltage VGOP −3 − +18 V
Drain−to−Source On Resistance RDS(on) VGS = 18 V, ID = 30 A, TJ = 25°C − 29 39 mW
VGS = 18 V, ID = 30 A, TJ = 175°C − 58 −
(Note 7)
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NVBG030N120M3S
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NVBG030N120M3S
TYPICAL CHARACTERISTICS
200 2.0
VGS = 20 V to 15 V 12 V
1.5 VGS = 15 V to 20 V
12 V
120
80
1.0
40
0 0.5
0 2 4 6 8 10 0 20 40 60 80
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5 400
ID = 30 A ID = 30 A
RDS(ON), NORMALIZED DRAIN−TO−
2.0
300
1.5 250
200
1.0 150
100
0.5 TJ = 150°C
50
TJ = 25°C
0 0
−75 −50 −25 0 25 50 75 100 125 150 175 200 4 8 12 16 20
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source
Temperature Voltage
100 500
VDS = 10 V RG = 4.7 W
VDD = 800 V Etot
80 400 VGS = 18/−3 V
ID, DRAIN CURRENT (A)
TC = 25°C
Eon
60 300
TJ = 175°C
40 200
TJ = 25°C
Eoff
20 100
TJ = −55°C
0 0
0 3 6 9 12 15 18 10 15 20 25 30
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, COLLECTOR CURRENT (A)
Figure 5. Transfer Characteristics Figure 6. Switching Loss vs. Collector Current
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NVBG030N120M3S
TYPICAL CHARACTERISTICS
500 400
RG = 4.7 W VDD = 800 V
Etot Etot
ID = 30 A ID = 15 A
400 VGS = 18/−3 V VGS = 18/−3 V
SWITCHING LOSS (mJ)
300 Eon
200
200
Eoff
100 Eoff
100
0 0
600 650 700 750 800 0 2 4 6 8 10
VDD, DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W)
Figure 7. Switching Loss vs. Drain−to−Source Figure 8. Switching Loss vs. Gate Resistance
Voltage
300 18
VGS = −3 V ID = 30 A VDD = 400 V
IS, REVERSE DRAIN CURRENT (A)
15
100 VDD = 800 V
12
9
VGS (V)
VDD = 600 V
TJ = 175°C 6
10
TJ = 25°C 3
0
TJ = −55°C
1 −3
0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 110 120
VSD, BODY DIODE FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
Figure 9. Reverse Drain Current vs. Body Figure 10. Gate−to−Source Voltage vs. Total
Diode Forward Voltage Charge
10K 100
CISS
IAV, AVALANCHE CURRENT (A)
25°C
1K
CAPACITANCE (pF)
150°C
COSS
100 10
CRSS
10
f = 1 MHz
VGS = 0 V
1 1
0.1 1 10 100 800 0.0001 0.001 0.01 0.1 1 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, AVALANCHE TIME (ms)
Figure 11. Capacitance vs. Drain−to−Source Figure 12. Unclamped Inductive Switching
Voltage Capability
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NVBG030N120M3S
TYPICAL CHARACTERISTICS
80 1000
RqJC = 0.43°C/W
70 TJ = Max Rated
VGS = 18 V 100 Single Pulse
60 TC = 25°C 10 ms
50 10
100 ms
40
10 ms
30 1 1 ms
20 RqJC = 0.43°C/W
0.1 RDS(on) Limit
100 ms/DC
10 Thermal Limit
Package Limit
0 0.01
25 50 75 100 125 150 175 0.1 1 10 100 1000
TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Continuous Drain Figure 14. Safe Operating Area
Current vs. Case Temperature
25K
P(PK), PEAK TRANSIENT POWER (w)
RqJC = 0.43°C/W
10K Single Pulse
TC = 25°C
1K
100
10
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE WIDTH (sec)
Figure 15. Single Pulse Maximum Power
Dissipation
2
1
THERMAL RESISTANCE (°C/W)
ZqJC, EFFECTIVE TRANSIENT
20%
0.1
10%
5%
2%
1%
0.01 PDM Notes:
Single Pulse RqJC = 0.43°C/W
t1 Peak TJ = PDM x ZqJC(t) + TC
t2 Duty Cycle, D = t1 / t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 16. Junction−to−Case Transient Thermal Response
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NVBG030N120M3S
PACKAGE DIMENSIONS
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NVBG030N120M3S
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NVBG030N120M3S