NTMFS5C673NL

Power MOSFET
60 V, 9.2 mW, 50 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
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• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS RDS(ON) MAX ID MAX
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
9.2 mW @ 10 V
Parameter Symbol Value Unit 60 V 50 A
13 mW @ 4.5 V
Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain TC = 25°C ID 50 A D (5)
Current RqJC
(Notes 1, 3) Steady TC = 100°C 35

Power Dissipation State TC = 25°C PD 46 W

RqJC (Note 1)
TC = 100°C 23 G (4)

Continuous Drain TA = 25°C ID 14 A

Current RqJA S (1,2,3)
(Notes 1, 2, 3) Steady TA = 100°C 10
State N−CHANNEL MOSFET
Power Dissipation TA = 25°C PD 3.6 W
RqJA (Notes 1 & 2)
TA = 100°C 1.8
MARKING
Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 290 A DIAGRAM
Operating Junction and Storage Temperature TJ, Tstg −55 to °C D
+175 1
S D
Source Current (Body Diode) IS 52 A DFN5 S 5C673L
(SO−8FL) S AYWZZ
Single Pulse Drain−to−Source Avalanche EAS 81 mJ CASE 488AA G D
Energy (IL(pk) = 2 A)
STYLE 1 D
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s) 5C673L = Specific Device Code
A = Assembly Location
Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year
device. If any of these limits are exceeded, device functionality should not be
W = Work Week
assumed, damage may occur and reliability may be affected.
ZZ = Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 3.2 °C/W ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
Junction−to−Ambient − Steady State (Note 2) RqJA 42 package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

October, 2015 − Rev. 0 NTMFS5C673NL/D
 NTMFS5C673NL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V

Drain−to−Source Breakdown Voltage V(BR)DSS/ 28
mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25 °C 10
VDS = 60 V mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 35 mA 1.2 2.0 V
Threshold Temperature Coefficient VGS(TH)/TJ −4.5 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 25 A 7.7 9.2
mW
VGS = 4.5 V ID = 25 A 11 13
Forward Transconductance gFS VDS = 15 V, ID = 25 A 37 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS 880
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 25 V 450 pF
Reverse Transfer Capacitance CRSS 11
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V; ID = 25 A 4.5
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V; ID = 25 A 9.5
Threshold Gate Charge QG(TH) 1.0 nC
Gate−to−Source Charge QGS 2.0
VGS = 4.5 V, VDS = 30 V; ID = 25 A
Gate−to−Drain Charge QGD 0.8
Plateau Voltage VGP 2.9 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time td(ON) 9.0
Rise Time tr VGS = 4.5 V, VDS = 30 V, 50
ns
Turn−Off Delay Time td(OFF) ID = 25 A, RG = 2.5 W 13
Fall Time tf 3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.9 1.2
V
IS = 25 A TJ = 125°C 0.8
Reverse Recovery Time tRR 28
Charge Time ta VGS = 0 V, dIs/dt = 100 A/ms, 14 ns
Discharge Time tb IS = 25 A 14
Reverse Recovery Charge QRR 18 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.

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 NTMFS5C673NL

TYPICAL CHARACTERISTICS

40 40
VGS = 3.6 V to 10 V
35 3.2 V 35 VDS = 3 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

30 30

25 3.0 V 25

20 20
2.8 V
15 15
TJ = 25°C
10 2.6 V 10

5 2.4 V 5 TJ = 125°C
TJ = −55°C
0 0
0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

40 20
TJ = 25°C
TJ = 25°C
35 18
ID = 25 A
30 16

25 14 VGS = 4.5 V

20 12

15 10
VGS = 10 V
10 8

5 6
3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage

2.25 100,000
TJ = 175°C
RDS(on), NORMALIZED DRAIN−TO−

VGS = 10 V
2.00
ID = 25 A 10,000
SOURCE RESISTANCE

IDSS, LEAKAGE (nA)

1.75
TJ = 125°C
1000
1.50
TJ = 85°C
1.25 100

1.00
10
0.75

0.50 1
−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTMFS5C673NL

TYPICAL CHARACTERISTICS

10000 10

VGS, GATE−TO−SOURCE VOLTAGE (V)

QT
9

CISS 8
C, CAPACITANCE (pF)

1000
7
COSS
6
100 5
4 QGS QGD

3
10 VDS = 30 V
VGS = 0 V CRSS 2
TJ = 25°C TJ = 25°C
1 ID = 25 A
f = 1 MHz
1 0
0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge

100 100
tr VGS = 0 V
IS, SOURCE CURRENT (A)

10
t, TIME (ns)

td(off)
10
td(on)
1

VGS = 4.5 V
tf VDS = 30 V
ID = 25 A TJ = 125°C TJ = 25°C TJ = −55°C
1 0.1
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100

1 ms
IPEAK, DRAIN CURRENT (A)

100 500 ms
ID, DRAIN CURRENT (A)

10 ms 10
10 TJ (initial)= 25°C
TC = 25°C
VGS ≤ 10 V TJ (initial)= 100°C
1
Single Pulse 1

0.1 RDS(on) Limit

Thermal Limit
Package Limit
0.01 0.1
0.1 1 10 100 1.E−06 1.E−05 1.E−04 1.E−03 1.E−02
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Drain Current vs. Time in
Safe Operating Area Avalanche

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 NTMFS5C673NL

TYPICAL CHARACTERISTICS
RqJA, EFFECTIVE TRANSIENT THERMAL

100

50% Duty Cycle

10 20%
RESISTANCE (°C/W)

10%
5%
2%
1
1%

0.1

Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (sec)
Figure 13. Thermal Response

DEVICE ORDERING INFORMATION

Device Marking Package Shipping†
NTMFS5C673NLT1G 5C673L DFN5 1500 / Tape & Reel
(Pb−Free)

NTMFS5C673NLT3G 5C673L DFN5 5000 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)
CASE 488AA
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
A q 0_ −−− 12 _

0.10 C GENERIC
SIDE VIEW MARKING DIAGRAM*
DETAIL A
1
b 8X XXXXXX
0.10 C A B AYWZZ
e/2
0.05 c e
L
1 4 XXXXXX = Specific Device Code
A = Assembly Location
K
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
PIN 5 M 2X
(EXPOSED PAD) L1 0.495 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
1.530 Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
G D2 may not follow the Generic Marking.
2X
BOTTOM VIEW 0.475
3.200
4.530

STYLE 1: STYLE 2: 2X
1.330
PIN 1. SOURCE PIN 1. ANODE
2. SOURCE 2. ANODE
0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
4X
1.000 1.270
4X 0.750 PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1

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