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 FQP27P06 P-Channel QFET® MOSFET
FQP27P06
P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 mΩ
Features
Description • - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V,
ID = - 13.5 A
This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary • Low Gate Charge (Typ. 33 nC)
planar stripe and DMOS technology. This advanced
• Low Crss (Typ. 120 pF)
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching • 100% Avalanche Tested
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, • 175C Maximum Junction Temperature Rating
audio amplifier, DC motor control, and variable switching
power applications.

S


G
●
G ●

D TO-220 ▶ ▲
S ●


Absolute Maximum Ratings TC = 25°C unless otherwise noted D
Symbol Parameter FQP27P06 Unit
VDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25°C) -27 A
- Continuous (TC = 100°C) -19.1 A
IDM Drain Current - Pulsed (Note 1) -108 A
VGSS Gate-Source Voltage  25 V
EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ
IAR Avalanche Current (Note 1) -27 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.8 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter FQP27P06 Unit
RJC Thermal Resistance, Junction-to-Case, Max. 1.25 °C/W
RCS Thermal Resistance, Case-to-Sink, Typ. 0.5 °C/W
RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

©2001 Semiconductor Components Industries, LLC. Publication Order Number:

October-2017,Rev.3 FQP27P06/D
 FQP27P06 P-Channel QFET® MOSFET
Elerical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit


Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -60 -- -- V
BVDSS Breakdown Voltage Temperature
ID = -250 A, Referenced to 25°C -- -0.06 -- V/°C
/ TJ Coefficient
IDSS VDS = -60 V, VGS = 0 V -- -- -1 A
Zero Gate Voltage Drain Current
VDS = -48 V, TC = 150°C -- -- -10 A
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V
RDS(on) Static Drain-Source
VGS = -10 V, ID = -13.5 A -- 0.055 0.07 
On-Resistance
gFS Forward Transconductance VDS = -30 V, ID = -13.5 A -- 12.4 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V, -- 1100 1400 pF
Coss Output Capacitance f = 1.0 MHz -- 510 660 pF
Crss Reverse Transfer Capacitance -- 120 155 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 18 45 ns
VDD = -30 V, ID = -13.5 A,
tr Turn-On Rise Time -- 185 380 ns
RG = 25 
td(off) Turn-Off Delay Time -- 30 70 ns
tf Turn-Off Fall Time (Note 4) -- 90 190 ns
Qg Total Gate Charge VDS = -48 V, ID = -27 A, -- 33 43 nC
Qgs Gate-Source Charge VGS = -10 V -- 6.8 -- nC
Qgd Gate-Drain Charge (Note 4) -- 18 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- -27 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -108 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -27 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -27 A, -- 105 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s -- 0.41 -- C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature

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2
 FQP27P06 P-Channel QFET® MOSFET
Typical Characteristics
2 2
10 VGS
10
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V

-ID , Drain Current [A]

-ID, Drain Current [A]

- 5.5 V 1
10
- 5.0 V
1
10 Bottom : - 4.5 V 175℃

0 25℃
10

-55℃
0 ※ Notes :
10 ※ Notes :
1. VDS = -30V
1. 250μ s Pulse Test
2. 250μ s Pulse Test
2. TC = 25℃
-1
10
10
-1 0
10 10
1 2 4 6 8 10

-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

0.24 10
2
Drain-Source On-Resistance

0.20
-IDR , Reverse Drain Current [A]

0.16 10
1
RDS(on) [],

VGS = - 10V

0.12
VGS = - 20V

0.08 10
0

175℃ 25℃
0.04 ※ Notes :
※ Note : TJ = 25℃ 1. VGS = 0V
2. 250μ s Pulse Test

0.00 -1
10
0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

3000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2500 10
-VGS, Gate-Source Voltage [V]

VDS = -30V
Coss
2000 8
Capacitance [pF]

VDS = -48V
Ciss ※ Notes :
1. VGS = 0 V
1500 2. f = 1 MHz 6

1000 4
Crss

500 2
※ Note : ID = -27 A

0 0
10
-1
10
0
10
1 0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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3
 FQP27P06 P-Channel QFET® MOSFET
Typical Characteristics (Continued)

1.2 2.5
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
-BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
1.5

1.0

1.0

0.9 ※ Notes :
1. VGS = 0 V 0.5 ※ Notes :
2. ID = -250 μA 1. VGS = -10 V
2. ID = -13.5 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

30
Operation in This Area
is Limited by R DS(on)
25
2
10
100 s
-ID, Drain Current [A]

-ID, Drain Current [A]

1 ms 20
10 ms
1
10 DC
15

10
0
10
※ Notes :
o
1. TC = 25 C 5
o
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 25 50 75 100 125 150 175

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

0
10

D = 0 .5
Zθ JC(t), Thermal Response

※ N o te s :
1 . Z θ J C ( t ) = 1 .2 5 ℃ /W M a x .
0 .2
2 . D u t y F a c to r , D = t 1 / t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
-1
10
0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

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4
 FQP27P06 P-Channel QFET® MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL
VDS t on t off
td(on) tr td(off)
VGS VDD tf

RG VGS
10%

-10V DUT

90%
VDS

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
tp Time
ID

RG VDD VDS (t)

VDD
ID (t)
-10V DUT
IAS
tp BVDSS

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5
 FQP27P06 P-Channel QFET® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

VDS

DUT _

I SD
L

Driver
RG
Compliment of DUT
(N-Channel) VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

Body Diode Reverse Current

I SD
( DUT ) IRM

di/dt

IFM , Body Diode Forward Current

VDS VSD
( DUT )

Body Diode VDD

Forward Voltage Drop

Body Diode Recovery dv/dt

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6
 FQP27P06 P-Channel QFET® MOSFET
Package Dimensions

TO-220

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7
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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