DMN4800LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features Mechanical Data

• Low On-Resistance • Case: SOP-8L
• 14mΩ @ VGS = 10V • Case Material: Molded Plastic, “Green” Molding Compound.
• 20mΩ @ VGS = 4.5V UL Flammability Classification Rating 94V-0
• Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020D
• Fast Switching Speed • Terminals Connections: See Diagram
•
NEW PRODUCT

• Low Input/Output Leakage Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Lead Free By Design/RoHS Compliant (Note 1)
• Marking Information: See Page 5
• "Green" Device (Note 2)
• Ordering Information: See Page 5
• Qualified to AEC-Q101 Standards for High Reliability
• Weight: 0.072g (approximate)

S D

S D

S D

G D

TOP VIEW TOP VIEW

Internal Schematic

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±25 V
Drain Current (Note 3) Steady TA = 25°C 9
ID A
State TA = 70°C 7
Pulsed Drain Current (Note 4) IDM 50 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit
Total Power Dissipation (Note 3) PD 1.46 W
Thermal Resistance, Junction to Ambient RθJA 86 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.

DMN4800LSS 1 of 6 July 2009

Document number: DS31736 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN4800LSS

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
NEW PRODUCT

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) 0.8 1.2 1.6 V VDS = VGS, ID = 250μA
11 14 VGS = 10V, ID = 9A
Static Drain-Source On-Resistance RDS (ON) ⎯ mΩ
14 20 VGS = 4.5V, ID = 7A
Forward Transconductance gfs ⎯ 8 ⎯ S VDS = 10V, ID = 9A
Diode Forward Voltage (Note 5) VSD ⎯ 0.72 0.94 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 798 ⎯ pF
VDS = 10V, VGS = 0V
Output Capacitance Coss ⎯ 128 ⎯ pF
f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 122 ⎯ pF
Gate Resistance RG ⎯ 1.37 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg ⎯ 8.7 ⎯
Gate-Source Charge Qgs ⎯ 1.7 ⎯ nC VGS = 5V, VDS = 15V, ID = 9A
Gate-Drain Charge Qgd ⎯ 2.4 ⎯
Turn-On Delay Time td(on) ⎯ 5.03 ⎯
Rise Time tr ⎯ 4.50 ⎯ VDD = 15V, VGEN = 10V,
ns
Turn-Off Delay Time td(off) ⎯ 26.33 ⎯ RL = 15Ω, RG = 6.0Ω, ID = 1A
Fall Time tf ⎯ 8.55 ⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.

30 30
VGS = 10V

25 VGS = 4.5V 25 VDS = 5V

ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)

20 20
VGS = 3.0V

15 15

10 10
VGS = 2.5V TA = 150°C
TA = 125°C TA = 85°C
5 5
TA = 25°C

TA = -55°C
VGS = 2.0V
0 0
0 0.5 1 1.5 2 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic

DMN4800LSS 2 of 6 July 2009

Document number: DS31736 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN4800LSS

0.08 0.03
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS = 4.5V

0.07
TA = 150°C

0.06 TA = 125°C
0.02
0.05 VGS = 2.5V TA = 85°C
NEW PRODUCT

0.04
TA = 25°C

0.03
0.01
TA = -55°C
0.02
VGS = 4.5V
0.01

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.8 0.03

RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω)

ON-RESISTANCE (NORMALIZED)

1.6 0.025
RDSON, DRAIN-SOURCE

1.4 0.02

VGS = 4.5V
ID = 10A
1.2 0.015

1.0 0.01
VGS = 4.5V VGS = 10V
ID = 10A ID = 11.6A

0.8 0.005
VGS = 10V
ID = 11.6A
0.6 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature

1.6 20
VGS(TH), GATE THRESHOLD VOLTAGE (V)

TA = 25°C

16
IS, SOURCE CURRENT (A)

1.2 ID = 1mA

ID = 250µA 12

0.8

0.4
4

0 0
-50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current

DMN4800LSS 3 of 6 July 2009

Document number: DS31736 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN4800LSS

10,000 10

VGS, GATE-SOURCE VOLTAGE (V)

8
C, CAPACITANCE (pF)

1,000
Ciss 6 ID = 11.6A
NEW PRODUCT

ID = 9A

Coss
4
100
Crss

10 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
VDS, DRAIN-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)
Fig. 9 Typical Total Capacitance Fig. 10 Total Gate Charge

10,000
T A = 150°C
IDSS, LEAKAGE CURRENT (nA)

1,000
T A = 125°C

100

T A = 85°C

10

TA = 25°C

T A = -55°C
1
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage

1
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5

D = 0.3

0.1
D = 0.1
D = 0.9
D = 0.05

RθJA(t) = r(t) * RθJA

D = 0.02 RθJA = 85°C/W
0.01
D = 0.01
P(pk)
t1
D = 0.005 t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response

DMN4800LSS 4 of 6 July 2009

Document number: DS31736 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN4800LSS

Ordering Information (Note 6)

Part Number Case Packaging

DMN4800LSS-13 SOP-8L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information
NEW PRODUCT

Top View
8 5

Logo
N4800LS Part no.
YY WW

Week: 01 ~ 52
Year: “09” = 2009
1 4

Package Outline Dimensions

SOP-8L
Dim Min Max
A - 1.75
0.254

A1 0.10 0.20
E1 E A2 1.30 1.50
Gauge Plane
A1 Seating Plane A3 0.15 0.25
L b 0.3 0.5
D 4.85 4.95
Detail ‘A’
E 5.90 6.10
E1 3.85 3.95
h 7°~9°
45°
e 1.27 Typ
h - 0.35
A2 A A3
Detail ‘A’ L 0.62 0.82
θ 0° 8°
e b All Dimensions in mm
D

Suggested Pad Layout

Dimensions Value (in mm)

X 0.60
Y 1.55
C1 C1 5.4
C2 1.27
C2

DMN4800LSS 5 of 6 July 2009

Document number: DS31736 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN4800LSS

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
NEW PRODUCT

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

DMN4800LSS 6 of 6 July 2009

Document number: DS31736 Rev. 5 - 2 www.diodes.com © Diodes Incorporated