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5.5 | SUMMARY
■ The two basic transport mechanisms are drift, due to an applied electric field, and diffu-
sion, due to a density gradient.
■ Carriers reach an average drift velocity in the presence of an applied electric field, due
to scattering events. Two scattering processes within a semiconductor are lattice scatter-
ing and impurity scattering.
■ The average drift velocity is a linear function of the applied electric field for small val-
ues of electric field, but the drift velocity reaches a saturation limit that is on the order
of 10 7 cm/s at high electric fields.
■ Carrier mobility is the ratio of the average drift velocity and applied electric field. The
electron and hole mobilities are functions of temperature and of the ionized impurity
concentration.
■ The drift current density is the product of conductivity and electric field (a form of
Ohm’s law). Conductivity is a function of the carrier concentrations and mobilities. Re-
sistivity is the inverse of conductivity.
■ The diffusion current density is proportional to the carrier diffusion coefficient and the
carrier density gradient.
■ The diffusion coefficient and mobility are related through the Einstein relation.
■ The Hall effect is a consequence of a charged carrier moving in the presence of perpen-
dicular electric and magnetic fields. The charged carrier is deflected, inducing a Hall volt-
age. The polarity of the Hall voltage is a function of the semiconductor conductivity type.
The majority carrier concentration and mobility can be determined from the Hall voltage.