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4N25, 4N26, 4N27, 4N28

Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection

FEATURES
1 6 B
• Isolation test voltage 5000 VRMS
A
• Interfaces with common logic families
C 2 5 C • Input-output coupling capacitance < 0.5 pF
NC 3 4 E
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
21842
APPLICATIONS
i179004-5

• AC mains detection
• Reed relay driving
DESCRIPTION • Switch mode power supply feedback
The 4N25 family is an industry standard single channel • Telephone ring detection
phototransistor coupler. This family includes the 4N25,
• Logic ground isolation
4N26, 4N27, 4N28. Each optocoupler consists of gallium
arsenide infrared LED and a silicon NPN phototransistor. • Logic coupling with high frequency noise rejection

AGENCY APPROVALS
• UL1577, file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
• FIMKO: EN 60950, EN 60065, EN 60335

ORDER INFORMATION
PART REMARKS
4N25 CTR > 20 %, DIP-6
4N26 CTR > 20 %, DIP-6
4N27 CTR > 10 %, DIP-6
4N28 CTR > 10 %, DIP-6

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT


INPUT
Reverse voltage VR 5 V
Forward current IF 60 mA
Surge current t ≤ 10 μs IFSM 3 A
Power dissipation Pdiss 100 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V
Emitter base breakdown voltage VEBO 7 V
IC 50 mA
Collector current
t ≤ 1 ms IC 100 mA
Power dissipation Pdiss 150 mW

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725


132 Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT


COUPLER
Isolation test voltage VISO 5000 VRMS
Creepage distance ≥7 mm
Clearance distance ≥7 mm
Isolation thickness between emitter and
≥ 0.4 mm
detector
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175
VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
Isolation resistance
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 125 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj 125 °C
max.10 s dip soldering:
Soldering temperature (2) distance to seating plane Tsld 260 °C
≥ 1.5 mm
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).

ELECTRICAL CHARACTERISTICS (1)


PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage (2) IF = 50 mA VF 1.3 1.5 V
Reverse current (2) VR = 3 V IR 0.1 100 μA
Capacitance VR = 0 V CO 25 pF
OUTPUT
Collector base breakdown voltage (2) IC = 100 μA BVCBO 70 V
Collector emitter breakdown voltage (2) IC = 1 mA BVCEO 30 V
Emitter collector breakdown voltage (2) IE = 100 μA BVECO 7 V
4N25 5 50 nA
4N26 5 50 nA
ICEO(dark) (2) VCE = 10 V, (base open)
4N27 5 50 nA
4N28 10 100 nA
VCB = 10 V,
ICBO(dark) (2) 2 20 nA
(emitter open)
Collector emitter capacitance VCE = 0 CCE 6 pF
COUPLER
Isolation test voltage (2) Peak, 60 Hz VIO 5000 V
Saturation voltage, collector emitter ICE = 2 mA, IF = 50 mA VCE(sat) 0.5 V
Resistance, input output (2) VIO = 500 V RIO 100 GΩ
Capacitance, input output f = 1 MHz CIO 0.6 pF
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.

Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com


Rev. 1.8, 07-Jan-10 133
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

CURRENT TRANSFER RATIO (1)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT


4N25 CTRDC 20 50 %
4N26 CTRDC 20 50 %
DC current transfer ratio VCE = 10 V, IF = 10 mA
4N27 CTRDC 10 30 %
4N28 CTRDC 10 30 %
Note
(1) Indicates JEDEC registered values.

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise and fall times VCE = 10 V, IF = 10 mA, RL = 100 Ω tr, tf 2 μs

TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified

1.4 1.5
Normalized to:
1.3 VCE = 10 V, IF = 10 mA, TA = 25 °C
VF -Forward Voltage (V)

TA = - 55 °C NCTR - Normalized CTR


CTRCE(sat) VCE = 0.4 V
1.2
1.0
TA = 25 °C
1.1 TA = 50 °C

1.0
0.5
0.9
TA = 85 °C NCTR(SAT)
0.8 NCTR

0.7 0.0
0.1 1 10 100 0.1 1 10 100
i4n25_01 IF - Forward Current (mA) i4n25_03 IF - LED Current (mA)

Fig. 1 - Forward Voltage vs. Forward Current Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current

1.5 1.5
Normalized to: Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 °C VCE = 10 V, IF = 10 mA, TA = 25 °C
NCTR - Normalized CTR

NCTR - Normalized CTR

CTRCE(sat) = 0.4 V CTRCE(sat) VCE = 0.4 V

1.0 1.0
TA = 25 °C TA = 70 °C

0.5 0.5

NCTR(SAT) NCTR(SAT)
NCTR
NCTR
0.0 0.0
0 1 10 100 0.1 1 10 100
i4n25_02 IF - LED Current (mA) i4n25_04 IF - LED Current (mA)

Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current LED Current

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725


134 Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

1.5 1.5
Normalized to: Normalized to:

NCTRcb - Normalized CTRcb


VCE = 10 V, IF = 10 mA, TA = 25 °C VCB = 9.3 V, IF = 10 mA, TA = 25 °C
NCTR - Normalized CTR

CTRCE(sat) VCE = 0.4 V

1.0 1.0
TA = 85 °C

0.5 0.5
25 °C
NCTR(SAT) 50 °C
NCTR 70 °C

0.0 0.0
0.1 1 10 100 0.1 1 10 100
i4n25_05 IF - LED Current (mA) i4n25_08 IF - LED Current (mA)

Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
LED Current

35 10
Normalized to:
ICE - Collector Current (mA)

30
Normalized Photocurrent IF = 10 mA, TA = 25 °C
25
50 °C 1
20
70 °C
15
25 °C 85 °C
0.1
10 Nib, TA = - 20 °C
Nib, TA = 20 °C
5 Nib, TA = 50 °C
Nib, TA = 70 °C
0 0.01
0 10 20 30 40 50 60 0.1 1 10 100
i4n25_06 IF - LED Current (mA) i4n25_09 IF - LED Current (mA)

Fig. 6 - Collector Emitter Current vs. Fig. 9 - Normalized Photocurrent vs. IF and Temperature
Temperature and LED Current

105 1.2
70 °C
ICEO - Collector Emitter (nA)

104
NhFE - Normalized hFE

1.0
103 25 °C
10 2 - 20 °C
VCE = 10 V 0.8
101 Normalized to:
IB = 20 µA, VCE = 10 V,
Typical TA = 25 °C
100
0.6
10- 1

10- 2 0.4
- 20 0 20 40 60 80 100 1 10 100 1000
i4n25_10 Ib - Base Current (µA)
i4n25_07 Tamb- Ambient Temperature (°C)

Fig. 7 - Collector Emitter Leakage Current vs. Temperature Fig. 10 - Normalized Non-Saturated hFE vs.
Base Current and Temperature

Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com


Rev. 1.8, 07-Jan-10 135
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

1.5
NhFE(sat) - Normalized Saturated hFE

Normalized to: VCC = 5 V


VCE = 10 V, Ib = 20 µA
70 °C 50 °C TA = 25 °C
1.0 f = 10 kHz RL
DF = 50 %
25 °C
VO
- 20 °C
0.5
IF = 10 mA
VCE = 0.4 V

0.0
1 10 100 1000 i4n25_14
i4n25_11 Ib - Base Current (µA)

Fig. 11 - Normalized hFE vs. Base Current and Temperature Fig. 14 - Switching Schematic

1000 2.5
tPLH- Propagation Delay (µs)

IF = 10 mA, TA = 25 °C
tPHL - Propagation Delay (µs)

VCC = 5.0 V, Vth = 1.5 V


tPHL
100 2.0

10 1.5
tPLH

1 1.0
0.1 1 10 100
i4n25_12 RL - Collector Load Resistor (kΩ)

Fig. 12 - Propagation Delay vs. Collector Load Resistor

IF

tD
VO tR
tPLH

VTH = 1.5 V

tPHL tS tF

i4n25_13

Fig. 13 - Switching Timing

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725


136 Rev. 1.8, 07-Jan-10
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

PACKAGE DIMENSIONS in millimeters

7.62 typ.
7.12 ± 0.3

6.5 ± 0.3

3.5 ± 0.3
4.5 ± 0.3

4.5 ± 0.3
2.8 ± 0.15
0.5 ± 0.1

1.2 ± 0.1 0.25

6 5 4
7.62 to 9.5 typ.

14771_2 1 2 3

PACKAGE MARKING
4N25

V YWW 24
21764-25

Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com


Rev. 1.8, 07-Jan-10 137
Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com


Revision: 18-Jul-08 1

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