CQY80N, CQY80NG

Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection

FEATURES
B C E • Isolation materials according to UL94-VO
6 5 4
• Pollution degree 2 (DIN/VDE 0110/resp.
IEC 60664)
• Special construction: therefore, extra low
coupling capacity of typical 0.3 pF, high common
mode rejection
1 2 3
• Low temperature coefficient of CTR
A (+) C (-) NC
• Climatic classification 55/100/21 (IEC 60068 part 1)
V
D E • Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
18537_5
• Isolation test voltage (partial discharge test voltage)
17201_4
Vpd = 1.6 kV
DESCRIPTION • Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
The CQY80N(G) series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a • Rated recurring peak voltage (repetitive)
6 pin plastic dual inline package. VIORM = 600 VRMS (848 V peak)
• Creepage current resistance according to VDE 0303/
AGENCY APPROVALS IEC 60112 comparative tracking index: CTI = 275
• UL1577, file no. E52744, double protection • Thickness through insulation ≥ 0.75 mm
• BSI: BS EN 41003, BS EN 60065, BS EN 60950 • Compliant to RoHS directive 2002/95/EC and in
• DIN EN 60747-5-5 (VDE 0884) accordance to WEEE 2002/96/EC
• FIMKO (SETI): EN 60950, certificate no. FI25155
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884)

ORDER INFORMATION
PART REMARKS
CQY80N CTR > 50 %, DIP-6
CQY80NG CTR > 50 %, DIP-6
Note
G = leadform 10.16 mm; G is not marked on the body.

Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.9, 13-Oct-09 263
CQY80N, CQY80NG
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT
Reverse voltage VR 5 V
Forward current IF 60 mA
Power dissipation Pdiss 70 mW
Junction temperature Tj 125 °C
Forward surge current tp ≤ 10 µs IFSM 1.5 A
OUTPUT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 70 mW
Junction temperature Tj 125 °C
COUPLER
Isolation test voltage (RMS) t = 1 min VISO 5000 VRMS
Total power dissipation Ptot 250 mW
Ambient temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 125 °C
Soldering temperature (2) 2 mm from case, t ≤ 10 s Tsld 260 °C
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.

ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF 1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 32 V
Emitter collector voltage IE = 100 µA VECO 7 V
VCE = 20 V, IF = 0 A,
Collector emitter leakage current ICEO 10 200 nA
E=0
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V
VCE = 5 V, IF = 10 mA,
Cut-off frequency fc 110 kHz
RL = 100 Ω
Coupling capacitance f = 1 MHz Ck 0.3 pF
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IC/IF VCE = 5 V, IF = 10 mA CTR 50 90 %

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83533

264 Rev. 1.9, 13-Oct-09
 CQY80N, CQY80NG
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

MAXIMUM SAFETY RATINGS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current IF 130 mA
OUTPUT
Power dissipation Pdiss 265 mW
COUPLER
Rated impulse voltage VIOTM 6 kV
Safety temperature Tsi 150 °C
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.

INSULATION RATED PARAMETERS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
100 %, ttest = 1 s Vpd 1.6 kV
routine test
Partial discharge test voltage - tTr = 60 s, ttest = 10 s, VIOTM 6 kV
lot test (sample test) (see figure 2) Vpd 1.3 kV
VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Insulation resistance
VIO = 500 V, Tamb = 150 °C
RIO 109 Ω
(construction test only)

275
Ptot - Total Power Dissipation (mW)

VIOTM
250 t1, t2 = 1 to 10 s
225 t3 , t4 =1s
Psi (mW)
200 ttest = 10 s
175 tstres = 12 s
150 VPd
125 VIOWM
100 VIORM
Isi (mA)
75
50
25
0 0
t3 ttest t4
0 25 50 75 100 125 150 175
t1 tTr = 60 s t2 t stres
95 10923 Tamb - Ambient Temperature (°C) 13930
t

Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC 60747

Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.9, 13-Oct-09 265
CQY80N, CQY80NG
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
VS = 5 V, IC = 5 mA, RL = 100 Ω,
Delay time td 4 µs
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
Rise time tr 7 µs
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
Fall time tf 6.7 µs
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
Storage time ts 0.3 µs
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
Turn-on time ton 11 µs
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
Turn-off time toff 7 µs
(see figure 3)
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
Turn-on time ton 25 µs
(see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
Turn-off time toff 42.5 µs
(see figure 4)

IF

0
tp t
+5V IC
IF IF
0 100 %
IC = 5 mA; Adjusted through
input amplitude 90 %

RG = 50 Ω
tp
= 0.01
T 10 %
tp = 50 µs 0
Channel I tr
Oscilloscope td ts tf t

Channel II RL ≥ 1 MΩ t on t off

50 Ω 100 Ω CL ≥ 20 pF tp Pulse duration ts Storage time

td Delay time tf Fall time
14943 tr Rise time t off (= ts + tf) Turn-off time
t on (= td + tr) Turn-on time 96 11698

Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times

IF IF +5V
0
IC
RG = 50
tp
= 0.01
T
tp = 50 µs

Channel I
Oscilloscope
RL 1 M
Channel II CL 20 pF
50 1k

14944

Fig. 4 - Test Circuit, Saturated Operation

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83533

266 Rev. 1.9, 13-Oct-09
 CQY80N, CQY80NG
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Ptot - Total Power Dissipation (mW)

300 10 000

ICEO - Collector Dark Current,

Coupled device VCE = 20 V
250 IF = 0

with Open Base (nA)

1000
200
Phototransistor
150 100
IR-diode
100
10
50

0 1
0 40 80 120 0 25 50 75 100
96 11700 Tamb - Ambient Temperature (°C) 95 11026 Tamb - Ambient Temperature (°C)

Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature

1000 1

ICB- Collector Base Current (mA)

IF - Forward Current (mA)

VS = 5 V
100
0.1

10

0.01
1

0.1 0.001
0 0.4 0.8 1.2 1.6 2.0 1 10 100
96 11862 VF - Forward Voltage (V) 95 11052 IF - Forward Current (mA)

Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Collector Base Current vs. Forward Current
CTRrel - Relative Current Transfer Ratio

1.5 100
1.4 VCE = 5 V VCE = 5 V
IC - Collector Current (mA)

IF = 10 mA
1.3
10
1.2
1.1
1.0 1
0.9
0.8
0.1
0.7
0.6
0.5 0.01
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80 0.1 1 10 100
96 11920 Tamb - Ambient Temperature (°C) 95 11053 IF - Forward Current (mA)

Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 11 - Collector Current vs. Forward Current

Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.9, 13-Oct-09 267
CQY80N, CQY80NG
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

100 1000

CTR - Current Transfer Ratio (%)

IF = 50 mA 20 mA
IC - Collector Current (mA)

10 mA VCE = 5 V
10 100
5 mA

2 mA
1 10
1 mA

0.1 1
0.1 1 10 100 0.1 1 10 100
95 11054 VCE - Collector Emitter Voltage (V) 95 11057 IF - Forward Current (mA)

Fig. 12 - Collector Current vs. Collector Emitter Voltage Fig. 15 - Current Transfer Ratio vs. Forward Current

1.0 50

ton/toff - Turn-on/Turn-off Time (µs)

toff
VCEsat - Collector Emitter
Saturation Voltage (V)

0.8 40

0.6 30

CTR = 50 % used ton

0.4 20
Saturated operation
0.2 10 VS = 5 V
20 % used RL = 1 kΩ
0 10 % used
0
1 10 100 0 5 10 15 20
95 11055 IC - Collector Current (mA) 95 11017 IF - Forward Current (mA)
Fig. 13 - Collector Emitter Saturation Voltage vs. Collector Current Fig. 16 - Turn-on/off Time vs. Forward Current

1000 20
ton/toff - Turn-on/Turn-off Time (µs)

VCE = 5 V Non-saturated
ton operation
hFE - DC Current Gain

800 VS = 5 V
15
RL = 100 Ω

600 toff
10

400

5
200

0 0
0.01 0.1 1 10 100 0 2 4 6 8 10
95 11056 IC - Collector Current (mA) 95 11016 IC - Collector Current (mA)

Fig. 14 - DC Current Gain vs. Collector Current Fig. 17 - Turn-on/off Time vs. Collector Current

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83533

268 Rev. 1.9, 13-Oct-09
 CQY80N, CQY80NG
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

PACKAGE DIMENSIONS in millimeters

DIP-6

7.62 typ.
7.12 ± 0.3

6.5 ± 0.3

3.5 ± 0.3

4.5 ± 0.3

4.5 ± 0.3
2.8 ± 0.5
0.5 ± 0.1

1.2 ± 0.1 0.25

6 5 4
7.62 to 9.5 typ.

14771_2 1 2 3

DIP-6, 400 mil

7.62 typ.
7.12 ± 0.3

6.5 ± 0.3
3.5 ± 0.3

4.5 ± 0.3
2.8 ± 0.5

4.5 ± 0.3

0.5 ± 0.1
0.25
1.2 ± 0.1
10.16 (typ.)
6 5 4

14771_1 1 2 3

PACKAGE MARKING
CQY80N

V YWW 24
21764-28

Document Number: 83533 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.9, 13-Oct-09 269
 Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1