1 Which one of the following theory considering the movement of electron in periodic

potential
a) classical free electron theory
b) quantum free electron theory
c) Brillouin Zone Theory
d) Free electron theory
2 The probability of finding an electron at an energy level having Fermi energy is
a) >1
b) <1
c) 0
d) = 0.5
3 Which one of the following material have direct band gap
a) Silicon
b) Germanium
c) Aluminium arsenide
d) Gallium arsenide
4 The product of ψ ψ* revealed the ___ of the electron
a) Position
b) Momentum
c) Energy
d) Fermi level
5 Which one of the following is a three particle transition
a) Photon transition
b) Phonon transition
c) Band to band transition
d) Auger transition
6 A n-type semiconductor having lower work function than a metal will create ___during the
contact.
a) Schottky junction
b) Ohmic junction
c) Thermionic junction
d) P-N junction
7 The Fermi level of a p-type semiconductor at room temperature lies
a) In the middle of forbidden gap
b) Near to conduction band edge
c) Near to valence band edge
d) Inside the valence band
8 A polaron is a quasi-particle indicating ___
a) Carrier drift
b) Lattice distortion
c) Carrier dirft + lattice distortion
d) Carrier diffusion
9 A transition of electron from valence band to acceptor level is considered as
a) Band to band transition
b) Free carrier transition
 c) Impurity level to band transition
d) Intra band transition
10 A phase space is a hypothetical space and it contains___coordinates
a) 3
b) 2
c) 6
d) 8
11 Usually the free carrier transition in semiconductors results in ____emission or absorption.
a) Photon
b) Phonon
c) Photon and phonon together
d) X-ray
12 Determine the Fill Factor (FF) of the solar cell, if Short-Circuit Current (Isc) = 2.75 A,
Open-Circuit Voltage (Voc) = 0.6V, Current at Maximum Power (Im) = 2 A and Voltage at
Maximum Power (Vm) = 0.5 V
a) 0.906
b) 0.806
c) 1.206
d) 0.606
13 According to the theory of Hilibrand and Gold formula for PN junction capacitance, the
extrapolation helps to identify the
a) Electric field
b) Fermi level
c) doping concentration
d) built in voltage
14 In a hot probe technique, the voltage generated when charge carriers diffuse is due to ------
--
(a) Pressure gradient
(b) Mass gradient
(c) Temperature gradient
(d) Volume gradient
15 Technology Computer-Aided Design is one of a type under
a) Numerical modelling
b) Analytical modelling
c) A type of Monte-Carlo method
d) device fabrication
16 The Boltzmann Transport equation helps to identify the ___of an electron.
a) Energy
b) Momentum
c) Probability function
d) Spin
17 In quantum well systems, the thickness of a material should be on the order of the
a) velocity of the electron
b) De Broglie wavelength of electron
c) mass of the electron
 d) momentum of the electron
18 The notation for zig zag carbon nanotube can be written as
a) (n, 0)
b) (n, n)
c) (n, m)
d) (0, 0)
19 Which one of the following method employs ionized gases for deposition purpose?
a) e-beam evaporation
b) Thermal evaporation
c) Atmospheric CVD
d) Sputtering
20 Kakuchi Bands observed in transmission electron microscope are related to
a) Phase of the crystal
b) Bandgap of the sample
c) Conductivity of the sample
d) Atomic spacings of the sample
1 The electron occupation probability in the Fermi level is equal to
a) > 0.5
b) < 0.5
c) 0.5
d) 1
2 Calculate the Fermi function for energy KBT above Fermi level
a) 0.628
b) 0.782
0.428
d) 0.268
3 The maximum energy of electrons in the reciprocal lattice is termed
as
a) Fermi level
b) Fermi surface
c) Fermi function
d) conduction surface
4 The product of ψ ψ* revealed the ___ of the electron
e) Position
f) Momentum
g) Energy
h) Fermi level
5 The Kronig-Penney model explains the electron motion in
a) Free space
b) Periodic square well potential
c) One dimensional potential
d) vacuum
6 Which one of the following is responsible for creating electro
phosphorescence in OLEDs
a) Singlet excitons
 b) triplet excitons
c) charge transfer excitons
d) excimers
7 A semiconductor with lower work function than a metal will create
___during the contact.
a) Schottky junction
b) ohmic junction
c) thermionic junction
d) p-n junction
8 Calculate the wavelength of light emission from GaAs whose band
gap is 1.44 eV,
a) 828 nm
b) 628 nm
c) 862 nm
d) 682 nm
9 Which one of the following can be employed to prepare p-type Si
a) tetra valent impurity
b) both penta and tetravalent impurity
c) pentavalent impurity
d) trivalent impurity
10 In photodiodes the carrier generation regions are mentioned as
Lp+Ln+W, here Ln and Lp are
a) quasit-neutral regions
b) depletion region on p/n sides
c) diffusion lengths of electron/hole
d) mean lifetime of electron/hole
11 A transition of electron from valence band to acceptor level is
considered as
a) band to band transition
b) free carrier transition
c) impurity level to band transition
d) intra band transition
12 The Fermi’s golden rule helps to identify the
e) velocity of light
f) momentum of electrons
g) absorption energy of electron
h) transition rate per unit volume
13 Determine the Fill Factor FF of the solar cell, if Short-Circuit
Current (Isc) = 2.75 A, Open-Circuit Voltage (Voc) = 0.6V, Current
at Maximum Power (Im) = 2 A and Voltage at Maximum Power
(Vm) = 0.5V
e) 0.906
f) 0.806
g) 1.206
h) 0.606
14 The density of states of photons are proportional to
a) Square of their energy
b) cube of their energy
c) square root of their energy
d) cube root of their energy
15 The power of a solar cell is always
a) positive
b) negative
c) zero
d) zero to a positive value
16 The estimated range of resistances under two point probe method is
a) 10-7 to 104 Ώ
b) 10-3 to 105 Ώ
c) 102 to 109 Ώ
d) 10-1 to 102 Ώ

17 In four probe method, the inner two contacts will be connected with
a) Ammeter
b) Galvanometer
c) Voltmeter
d) Current source
18 Tauc plot is used to calculate the____of semiconductors
a) Fermi level
b) Bandgap
c) Mobility
d) Conductivity \
19 Deep-level transient spectroscopy measures the ___ transients as a
function of temperature
a) Capacitance
b) Voltage
c) Current
d) doping
20 The amount of current observed in reverse bias condition in a P-N
junction is related
a) diffusion of majority carriers
b) drift of minority carriers
c) diffusion of minority carriers
d) photon current
21 The notation for zig zag carbon nanotube can be written as
a) (n, 0)
b) (n, n)
c) (n, m)
d) (0, 0)
22 The equation governing the X-ray diffraction is termed as
a) London equation
 b) Beer-Lamberts Law
c) Bragg’s equation
d) Fermi’s golden rule
23 Kakuchi Bands observed in Transmission electron microscope are
related to
a) Phase of the crystal
b) Bandgap of the sample
c) Conductivity of the sample
d) Atomic spacings of the sample
24 The glow of plasma discharge helping to depositing a material is
called as
a) Pulsed laser ablation
b) Vacuum evaporation
c) Sputtering deposition
d) Cathodic arc deposition
25 The increment of bandgap while decreasing the size of a material is
due to the effect of
a) Surface plasmon resonance
b) Quantum confinement
c) Conductivity increment
d) Poor absorption
1 According to the theory of Hilibrand and Gold formula for PN
junction capacitance, the extrapolation helps to identify the
a) Electric field
b) Fermi level
c) Doping concentration
d) Built in voltage
2 In four probe method, the inner two contacts will be connected with
a) Ammeter
b) Galvanometer
c) Voltmeter
d) Current source
3 The amount of current observed in reverse bias condition in a P-N
junction is related to
a) Diffusion of majority carriers
b) Drift of minority carriers
c) Diffusion of minority carriers
d) photon current
4 Which one of the following method is employed to solve Boltzmann
transport equation?
a) TCAD
b) Analytical modelling
c) Monte carlo method
d) DFT
5 UV-vis spectroscopy is worked under the principle of
a) photoluminescence
b) Ohms law
c) electron scattering
d) Beer-Lambert’s law
6 The type of Machine learning employed in robots to achieve
decision making is called as
a) supervised learning
b) Reinforcement learning
c) unsupervised learning
d) Deep learning
7 The elastically scattered electrons in TEM is beneficial for
a) understanding composition
b) understanding thickness of sample
c) understanding crystal planes
d) understanding the atomic spacings
8 The notation for zig zag carbon nanotube can be written as
i) (n, 0)
j) (n, n)
k) (n, m)
d) (0, 0)
9 The increment of bandgap while decreasing the size of a
nanomaterial is due to the effect of
a) Surface plasmon resonance
b) Quantum confinement
c) Conductivity increment
d) Poor absorption
10 Which one of the following method employs ionized gases for
deposition purpose?
a) e-beam evaporation
b) Thermal evaporation
c) Atmospheric CVD
d) Sputtering
11 In a _____ the material size is reduced in two directions and the
electron can move freely in one direction only.
a) Bulk
b) Quantum dot
c) Quantum well
d) Quantum wire
1 The resistance of a material is directly proportional to the --
a) Length
b) Area of cross section
c) Volume
d) Square of the Length
2 ____________ can be used to determine the concentration of
absorbance in the solution.
a) UV – Visible spectroscopy
b) Infrared spectroscopy
c) Atomic Force Microscopy
d) Scanning Electron Microscopy.
3 In hall effect electron placed in magnetic field, it experience
____force proportional to strength of field.
a) Lenz
b) Faradays
c) Lorentz
d) Gauss
4 In Hot point probe measurement if hot side is negative, the sample is
___type
a) P
b) N
c) PN
d) NP
5 C-V measurements are capable of yielding information about the
______________ and concentration of charge carriers
a) Drift potential
b) Diffusion potential
c) Bonding
d) Crystal structure

6 In 1D, D(E) is proportional to_______

a) E-1/2
b) E1/2
c) E0
d) 0
7 Scanning electron microscopy helps us _____.
a) see the surface texture of a sample
b) see the inside of a sample
c) see the atoms of a sample
d) see the electrons of a sample
8 Which of the following is NOT a type of carbon nanotube structure?
a) Chiral
b) Zigzag
c) Armchair
d) Helix
9 Nanostuctures have sizes in between ____________
a) 1 – 100 Ǻ
b) 1 -100 nm
c) 200-300 nm
d) 500-1000 nm
10 An example for 0D material __________
a) Nanowire
b) Nanorod
c) Nanosheet
d) Nanoparticle
11 The physical parameter that is probed in AFM resulting from
different interactions is________
a) Charge
b) Force
c) Potential
d) Current
1 The Fermi level of a p-type semiconductor at room temperature
lies
a) In the middle of forbidden gap
b) Near to conduction band edge
c) Near to valence band edge
d) Inside the valence band
Ans: C
2 Which one of the following is responsible for creating electro
fluorescence in OLEDs?
a) Singlet excitons
b) Triplet excitons
c) Charge transfer excitons
d) Excimers
Ans: A
3 Which one of the following is a three particle transition
a) Photon transition
b) Phonon transition
c) Band to band transition
d) Auger transition
Ans: D
4 During the forward bias condition in PN junction___increases
exponentially with voltage.
e) Drift current
f) Photo current
g) Diffusion current
h) Both drift and diffusion currents
Ans: C
5 Which one of the following semiconductor is not a good choice
for making LEDs?
(a) GaAs
(b) Si
(c) InP
(d) GaP
Ans: B
6 A n-type semiconductor having lower work function than a metal
will create ___during the contact.
a) Schottky junction
b) Ohmic junction
c) Thermionic junction
d) P-N junction
Ans: A
7 The density of states of photons are proportional to
e) Square of their energy
f) Cube of their energy
g) Square root of their energy
 h) Cube root of their energy
Ans: A
8 A phase space is a hypothetical space and it
contains___coordinates
a) 3
b) 2
c) 6
d) 8
Ans: C
9 The emission energy of a semiconductor is always corresponds to
the __
a) Fermi level
b) Band gap
c) Work function
d) Carrier concentration
Ans: B
10 Usually the free carrier transition in semiconductors results in
____emission or absorption.
a) Photon
b) Phonon
c) Photon and phonon together
d) X-ray
Ans: B
11 The Fermi’s golden rule helps to identify the
a) Velocity of light
b) Momentum of electrons
c) Absorption energy of electron
d) Transition rate per unit volume
Ans: D

1 The energy difference between vacuum level to the conduction

band edge is termed as
a) Work function
b) Fermi energy
c) Electron affinity
d) Ionization potential
Ans: C
2 Which one of the following parameter influence only the external
quantum efficiency of LEDs?
 a) Forward bias voltage
b) Radiative recombination process
c) Lifetime of electron-hole pairs
d) Critical angle at device interfaces
Ans: D
3 Which one of the following impurity can be employed to prepare a
n-type Si
a) Arsenic
b) Gallium
c) Boron
d) Germanium
Ans: A
4 During the reverse bias condition, the drift component of the
current in PN junction
a) Increases
b) Decreases
c) Depends on the voltage
d) Constant
Ans: D
5 A polaron is a quasi-particle indicating ___
a) Carrier drift
b) Lattice distortion
c) Carrier dirft+lattice distortion
d) Carrier diffusion
Ans: C
6 A heterojunction OLED will have ___organic semiconductors.
a) 2
b) 3
c) 1
d) More than 3
Ans: A
7 Joint density of states of photon in semiconductor is directly
proportional to
a) Work function
b) Band gap
c) Fermi level
d) Electric field
Ans: B
8 The process of inducing radiative emission from a molecule with a
help of another photon is called
a) Stimulated emission
b) Stimulated absorption
c) Spontaneous emission
d) Carrier generation
Ans: A
9 A transition of electron from valence band to acceptor level is
considered as
a) Band to band transition
b) Free carrier transition
c) Impurity level to band transition
d) Intra band transition
Ans: C
10 Einstein coefficients are the ratio between ___ and ___
a) Spontaneous emission, absorption
b) Spontaneous emission, stimulated emission
c) Stimulated absorption, stimulated emission
d) Stimulated absorption, absorption
Ans: B

11 Which one of the following is an intra band transition,

a) Band to band transition
b) Impurity level to band transition
c) Free carrier transition
d) Phonon transition
Ans: C