TECHNOLOGICAL UNIVERSITY (THANLYIN)

DEPARTMENT OF ELECTRONIC ENGINEERING

IV EC Tutorial I
ECE-41031 Industrial Electronics and Control I (EC)
Date: 1.2.2024 Time: 2:10 PM to 3:00 PM
1. Describe the correct answer from the following multiple-choice questions. (10 marks)
(i) In a P-N-P-N diode, breakover voltage is marked by
(a) a sudden increase in current.
(b) a sudden decrease in current.
(c) the diode getting burnt off.
(d) none of the above.
(ii) An SCR has
(a) four layers.
(b) three-terminals.
(c) two layers.
(d) all of the above.
(iii) An SCR can be constructed by sandwiching two transistors.
(a) one of the P-N-P type and the other N-P-N type.
(b) both of the P-N-P type.
(c) both of the N-P-N type.
(d) all of the above.
(iv) An SCR may be turned off by
(a) reducing its anode-cathode voltage.
(b) removing the gate voltage pulse.
(c) reducing the current below the holding value.
(d) none of the above.
(v) A triac can be considered as a combination of
(a) two diodes.
(b) two transistors.
(c) two SCRs.
(d) one diode and one SCR.
(vi) An SCR is used for control in
(a) dc circuits only.
(b) ac circuits only.
(c) both ac and dc circuits.
(d) none of the above.
(vii) Which of the following P-N-P-N devices does not have a gate terminal?
(a) Triac
(b) SCS
(c) SUS
(d) Diac

1
 (viii) A snubber circuit is used in the SCR control circuits to overcome the effects of
(a) transients in the dc supply.
(b) corona.
(c) electromagnetism.
(d) heating caused by the high voltage ac supply.
(ix) In a three-phase half-wave rectifier, each SCR conducts for a duration of
(a) 180°.
(b) 60°.
(c) 120°.
(d) 30°.
(x) In a three-phase full-wave fully-controlled bridges rectifier, each SCR conducts for a
duration of
(a) 120°.
(b) 60°.
(c) 45°.
(d) 30°.

2. The transistor in the circuit of Figure 1 has the following data: (15 marks)
VCE, sat = 1.5 V; hFE = 50; VBE, sat = 1.8 V.
(a) Determine the minimum value of Vin necessary to ensure a satisfactory ON-state.
(b) Determine the total ON-state power dissipation in the switch and calculate the values of its
collector dissipation and base dissipation components.
(c) A transient overvoltage spike occurs in this circuit because of external causes, resulting in
VCC going up from 100 V to 150 V for a short interval. Since the collector current is limited
by IB, assume that there is no significant change in IC. What will be the power dissipation in
the device under these conditions?

Figure 1