No. of Printed Pages : 03 Roll No. .......................

18C21
B. Tech. EXAMINATION, 2020

(Third Semester)

(C Scheme) (Main & Re-appear)

(ECE)

ECE201C

ELECTRONIC DEVICES

Time : 2½ Hours] [Maximum Marks : 75

Before answering the question-paper candidates

should ensure that they have been supplied to correct
and complete question-paper. No complaint, in this
regard, will be entertained after the examination.

Note : Attempt Five questions in all, selecting at

least one question from each Unit.

(2)M-18C21 1
1. (a) Briefly explain the behaviour of P-N
junction diode in forward and reverse
bias mode and draw its volt ampere
characteristics.
(b) Discuss the working of Zener diode as
voltage regulator.

2. Explain the following terms :

(i) Reverse recovery time
(ii) Switching characteristics of diode
(iii) Law of mass action
(iv) Hall effect
(v) Depletion layer and diffusion capacitance.

3. (a) Describe the circuit arrangement for

obtaining the input and output
characteristics of common base transistor.
(b) Discuss the following of a half wave
rectifier :
(i) Peak inverse voltage
(ii) Transformer utilization factor
(iii) Efficiency.
(2)M-18C21 2
4. (a) What are the applications of clamping
circuit ? Discuss the working of practical
clamper circuit.
(b) Describe the operation of a PNP
transistor.

5. What is the need of transistor biasing ? Discuss

various techniques of transistor biasing.

6. (a) Derive the expressions for various

h-parameters of BJT in CE configuration.
(b) Discuss Miller's theorem.

7. (a) Discuss the working of MOSFET in

common gate configuration.
(b) Explain the working of UJT.

8. Write technical notes on the following :

(i) Photodiode
(ii) IGBT.

(2)M-18C21 3 180