Solar cell simulation

Below is a summary of the PN union model and also a guide to the algorithm used to
perform the simulations shown in this repository. The equations were taken from the work of
the researcher Arturo Morales Acevedo and collaborators, who provides an explanation of
the model in https://www.sciencedirect.com/science/article/pii/S1665642317300950.

1. PN unión model
The simulation consists in determining the total current density produced by the cell, using
next expressions and taking into account the application of an external voltage. The
analytical solution is subject to two overlapping scenarios in the general solution: when the
cell is in darkness (Jdark) and when it is in illumination (Jph). Thus, the current density of the
cell (Jcell) is expressed as:

𝐽𝑐𝑒𝑙𝑙(𝑉) = 𝐽𝑝ℎ(𝑉) − 𝐽𝑑𝑎𝑟𝑘(𝑉) (3.4)

The current densities in lighting and darkness are given by:

λ𝑚𝑎𝑥
' ' '
𝐽𝑝ℎ(𝑉) = ∫ ⎡⎢𝐽𝑛(λ) + 𝐽𝑝(λ) + 𝐽𝑠𝑐𝑟(λ)⎤⎥𝑑λ (3.5)
λ𝑚𝑖𝑛 ⎣ ⎦

( ) ( )
𝑞𝑉 𝑞𝑉
𝑘𝐵𝑇 2𝑘𝐵𝑇
𝐽𝑑𝑎𝑟𝑘(𝑉) = 𝐽0 𝑒 − 1 + 𝐽00 𝑒 −1 (3.6)

In both equations the dependence with respect to voltage V is indicated, which is necessary
for the construction of the J vs V diagrams that characterize the behavior of a solar cell.
There are multiple variables involved. In equation 3.5, the dependence of Jph (photocurrent
density) with respect to three terms is observed: the first two, Jn 'and Jp' are the current
densities for electrons and holes due to diffusion in the quasi - neutrality; the third term Jscr
'is the current density due to entrainment in the space-charge region. Equation 3.6, seeks to
obtain the Jdark dark current density using two relevant terms: the first, J0 is the dark
saturation current due to diffusion and the second, J00 the dark saturation current due to
generation - recombination in the space-cargo region. Each of these stated values ​are
calculated from other expressions, shown below.

● Photocurrent density limited by ambipolar diffusion

( )
'
𝐽𝑝(λ) =
𝑞𝑁0(1−𝑅)𝑇α1𝐿𝑝
⎛
𝑆𝑝𝐿𝑝
𝐷𝑝
+α1𝐿𝑝−𝑒
−α1 𝑊𝑛−𝑥𝑛
( 𝑆𝑝𝐿𝑝
𝐷𝑝
cosh ( 𝑊𝑛−𝑥𝑛
𝐿𝑝 ) +sinh ( 𝑊𝑛−𝑥𝑛
𝐿𝑝 )) − α1𝐿𝑝𝑒
(
−α1 𝑊𝑛−𝑥𝑛 )
⎞ (3.7)
(α 𝐿 −1)
2 2
1 𝑝
⎝
𝑆𝑝𝐿𝑝
𝐷𝑝 ( )
sinh
𝑊𝑛−𝑥𝑛
𝐿𝑝
+cosh ( 𝑊𝑛−𝑥𝑛
𝐿𝑝 ) ⎠
( ) ( )
'
𝐽𝑛(λ) =
𝑞𝑁0(1−𝑅)𝑇α2𝐿𝑛 (−α1𝑊𝑛−α2𝑥𝑝)
𝑒 ⎛α 𝐿 −
𝑆𝑛𝐿𝑛
𝐷𝑛 ( ( )
cosh
𝑊𝑝−𝑥𝑝
𝐿𝑛
−𝑒 )
−α2 𝑊𝑝−𝑥𝑝
+sinh ( 𝑊𝑝−𝑥𝑝
𝐿𝑛 ) +α2𝐿𝑛𝑒
−α2 𝑊𝑝−𝑥𝑝

⎞ (3.8)
(α 𝐿 −1)
2 2
2 𝑛
⎝
2 𝑛 𝑆𝑛𝐿𝑛
𝐷𝑛
sinh ( ) 𝑊𝑝−𝑥𝑝
𝐿𝑛
+cosh ( 𝑊𝑝−𝑥𝑝
𝐿𝑛 ) ⎠

● Photocurrent density due to drift in the space-charge region

 (
−α1 𝑊𝑛−𝑥𝑛 ) −α1𝑥𝑛 −α1𝑥𝑛 −α2𝑥𝑝
'
𝐽𝑠𝑐𝑟(λ) = 𝑞𝑁0(1 − 𝑅)𝑇𝑒 ((1 − 𝑒 )+ 𝑒 (1 − 𝑒 )) (3.9)

● Dark saturation currents

𝐽0(𝑉) = 𝐽0𝑝(𝑉) + 𝐽0𝑛(𝑉) (3.10)

𝐽00(𝑉) = 𝑞 ( 𝑥𝑛𝑛𝑖,𝑛
τ𝑝
+
𝑥𝑝𝑛𝑖,𝑝
τ𝑛 ) (3.11)

( )
𝑆𝑝𝐿𝑝 𝑤𝑛−𝑥𝑛 𝑤𝑛−𝑥𝑛
𝑞𝐷𝑝𝑝0 𝐷𝑝
cosh 𝐿𝑝
+sinh 𝐿𝑝
𝐽0𝑝 = 𝐿𝑝 𝑆𝑝𝐿𝑝 𝑤𝑛−𝑥𝑛 𝑤𝑛−𝑥𝑛 (3.12.a)
𝐷𝑝
𝑠𝑖𝑛ℎ 𝐿𝑝
+𝑐𝑜𝑠ℎ 𝐿𝑝

( )
𝑆𝑛𝐿𝑛 𝑤𝑝−𝑥𝑝 𝑤𝑝−𝑥𝑝
𝑞𝐷𝑛𝑛0 𝐷𝑛
𝑐𝑜𝑠ℎ 𝐿𝑛
+sinh 𝐿𝑛
𝐽0𝑛 = 𝐿𝑛 𝑆𝑛𝐿𝑛 𝑤𝑝−𝑥𝑝 𝑤𝑝−𝑥𝑝 (3.12.b)
𝐷𝑛
𝑠𝑖𝑛ℎ 𝐿𝑛
+ cosh 𝐿𝑛

● Depletion region
1
) (
( 2ε𝑝ε𝑛𝑁𝑑 𝑉𝑏𝑖−𝑉
)
2
𝑥𝑝(𝑉) = 𝑞𝑁 ε 𝑁 +ε 𝑁
𝑎( 𝑛 𝑑 𝑝 𝑎)

1
) (
( 2ε𝑝ε𝑛𝑁𝑎 𝑉𝑏𝑖−𝑉
)
2
𝑥𝑛(𝑉) = 𝑞𝑁 ε 𝑁 +ε 𝑁
𝑑( 𝑛 𝑑 𝑝 𝑎)

● Built-in potential

𝑉𝑏𝑖 =
∆𝐸𝑐−∆𝐸ν
2
+ 𝑘𝐵𝑇 ln 𝑙𝑛 ( ) 𝑁𝑎𝑁𝑑
𝑛𝑖,𝑝𝑛𝑖,𝑛
+
𝑘𝑏𝑇
2
ln 𝑙𝑛 ( 𝑁𝑐,𝑝𝑁ν,𝑛
𝑛𝑐,𝑛𝑛ν,𝑝 ) (3.14)

Replacing the properties or values ​of the materials in the equations previously shown, in
addition to carrying out the necessary numerical integration processes. It is possible to
determine the current produced (Jcell). To construct the J-V curve, the described models
must be simulated, using different voltage values.
After obtaining the pairs (J, V) it is possible to determine the other variables of interest that
characterize the behavior of the cell, such as the power density (P), the open circuit voltage
(Voc), the current density in short circuit (Jsc), fill factor (FF) and efficiency (η).

𝑃𝑀𝑃𝑃 = 𝐽𝑀𝑃𝑃𝑉𝑀𝑃𝑃 (3.18)

𝐽𝑀𝑃𝑃𝑉𝑀𝑃𝑃
𝐹𝐹 = 𝐽𝑠𝑐𝑉𝑜𝑐
(3.19)

𝐽𝑠𝑐𝑉𝑜𝑐𝐹𝐹
η= 𝑃𝐼𝑛𝑐
(3.20)

2. Algorithm
The functions shown in the flow chart are described below, along with their respective input
and output values.

● Built-in Potential Vbi (equation 3.14).

Input: ΔEc, ΔE v, Na, Nd, nin, nip, Ncp, Ncn, Nvc, Nvn.
Output: Vbi.

The ΔEc, ΔEv values are obtained from Anderson's rule, using the electron
affinity values (χ) and the band gap (Eg) of each of the materials.

● Depletion Region xn y xp (equations 3.13.a and 3.13.b).

Input: Vbi, V, εp, εp, Na, Nd.
Output: xn, xp.

The calculation of the photocurrent must take into account that the values Jn’, Jp’ and Jscr’ are
variables that correspond to the derivatives of current densities and their values depend on
the wavelength. Then, a set of values is obtained as a function of λ.

● Photocurrent Jp’ (equation 3.7).

Input: xn, Wn, Lp, Sp, Dp, α1, R, T, N0.
Output: list Jp’

● Photocurrent Jn’ (equation 3.8).

Input: xp, Wn, Wp, Ln, Sn, Dn, α1, α2, N0.
Output: list Jn’.

● Photocurrent Jscr’ (equation 3.9).

Input: xn, xp, Wn, α1, α2, R, N0.
 Output: list Jscr’.

● Photocurrent Jph (equation 3.5).

Input: Jn’, Jp’, Jscr’.
Output: Jph.

The lists of values provided in the input are integrated numerically using the
trapezoidal method.

For the current density functions in the dark, the values J0 and J00 are initially calculated.
The J0 value requires two additional functions to perform its calculation.

● Saturation current density J0.

o Function J0p (equation 3.12.a).
Input: Sp, Lp, Dp, p0, xn, wn.
Output: J0n.
o Function J0n (equation 3.12.b).
Input: Sn, Ln, Dn, n0, xp, wp.
Output: J0n.
o Function J0 (equation 3.10).
Input: J0n, J0p, V.
Output: J0.

● Saturation current density J00 (equation 3.11).

Input: xn, xp, nin, nip, τp, τn.
Output: J00.

● Dark current density Jdark (equation 3.6).

Input: V, J0, J00.
Output: Jdark.