TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TLP521-1, TLP521-2, TLP521-4 TECHNICAL DATA GaAs IRED & PHOTO-TRANSISTOR ear PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY ‘The TOSHIBA TLPS2I-1, -2 and ~4 consist of a photo-transistor optically coupled to # gallium arsenide infrared emitting diode, ‘The TLP521-2 offers two isolated channels in an eight lead plastic DIP package, while the TLPOZI-4 provides four isolated channels in 4 slaveen plustle DIP package. © Collector-Emitter Voltage : © Current Transfer Ratio Rank GB : 100% (Min) '¢ Toolotion Voltage + 2600Vema (Min.) © UL Recognized : ULISTT, File No. B67349 PIN CONFIGURATIONS (TOP VIEW) TUP521-1 TLP 521-2 TLP52I~4 Unit in mm FrserT Fy __ weight -0269 JEDEC = IAS = TOSHIBA 11-552 Freez ,_ weight 05t9 Faas Tats Piet 2 32 72 6 L:aNope al 6a “ 2: CATHODE = Fx] SieMITTER 4d p 54 13 4: COLLECTOR 1,9: ANODE 12 2) 4; CATHODE 4 5)7: EMITTER a 6, 8; COLLECTOR 4 f 1 sl ° 43,57: ANODE 24.6.8: CATHODE 9,11, 13, 15: EMITTER 10, 12, 14, 18 : COLLECTOR [seDRC = BIA = rosmTBA 11-1004 fears. wean iite [SDRC = fBIAT = TOSHIBA _11-20A2 © Rema garam tome yaa ae rata eta Sasa eae a TPSSEMICONDUCTOR TLP521-1, TLP521-2, TLP521-4 TOSHIBA TECHNICAL DATA vary MAXIMUM RATINGS (Ta = 25°C) TATING cuaracrnnsne | svatow unr Taper Tipea« Fesand Com i 70 0 a cq Forward Current Deaing | alp°O| _~ara=oO) | ——aam=as@) [mar 8 [Pate Forvard Curent Tee 0 puke TOO) i [eves Votage VE . ¥ [ncton Tempers 7 7 75 [sso iniir Valtgs | Vong 7 v __ ills olledar Voligs [Vee 7 v 8 fontstor Curent Te 60 ak Blogs pre =| no wm wm mW F Denne Cheat Toeaso) | aPC! a1 a0 mw/ [sncion Tempera 7 5 7 Brags Tempera Rangs ——| “Tag 5-05 o parting Tempertare Range —| Tope =55=100 c fea Sliering Temprstre | Ty 25010 we) © sal Package Power Disipon | Py a i Ww ta Pkg Bower Ditton Fa =25 as [mwre ton Volnge Wy BOOCAC Tin RNS COR] Wate | Vie Note 1: Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together.SEMICONDUCTOR TLP521-1, TLP521-2, TLP521-4 TOSHIBA TECHNICAL DATA ws JURRENT TRANSFER RATIO) CLASSI. (V(io TR) yer | FICATION MARKING OF 1 [IP=5mA, Vop=sV, Te CLASSIFICATION MUN. MAX, x 50 600 BLANK, ¥, Y™, G G™, B, BS, GB Rank Y 50 150 ye rups21 [Rank GR 100 300 G, = Rank BL. 200 600 BBS Rank GB 100 ‘600 G, GB, BS, GB ‘TLPS21-2 A 30 ‘600 BLANK, GR, BL, GB murssi4 [Rank GB 100 600 GR, BL, GB “1: Bx, Rank GB : TLPS21-1 (GB) Note : Application type name for certification test, please use standard product type name, te, ‘TLP521-1 (GB) : TLP521-1, TLP521-2 (GB) : TLP521-2 easSEMICONDUCTOR TLP521-1, TLP521-2, TLP521-4 TOSHIBA TECHNICAL DATA ovaen INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta =25°C) cuaracteristic | SYMBOL "TBST CONDITION aun, [ Typ. [MAX. [UNIT a [eswad Voltage We [ip=tma io [aie] 1a] ¥ & [Roverse Current in |[va=5v —[—|[ [a [Capacitance cr |V~0, f-1Mis — | oo |— Tr [Cottector-mitiar 7 [Breakdown Voltage __|Y (BR) CEO}IC=0.5mA Si | [¥ % limitter-Collector : Fy Meomncdie~o:imn *|-|-| + Q Ve — [10 [00 [aa § |Collector Dark Curren oe 3 |Cotector Dark Current | Iczo = [2] 60] aa ICapacitance [Cottector to Emitter) | COB -[] °)- | COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) cuaracreristic | SYMBOL "TBST CONDITION aun, [ Typ. [MAX. [UNIT urrent Transfer Ratio Tote |P=9mA, VoR=5V 50 | — | 600 | Cerrone ws our Rank GB 300 | — | 600 Saturated CTR Ip (gay |? 2 VOR OAV aa ‘ tote as) Rank GB so] —[— Collector miter = v Saturation Voltage Yor (sat) [Io=24ma) Tp=tmA ~|- |] ISOLATION CHARACTERISTICS (Ta =25%O) cuaracreristic | SYMBOL "TEST CONDITION an. | Typ. [MAX. [UNIT [Capacitance To fe dnput to Output) Cs [Vero fines — | | = | F Isolation Resistance Re |Vg=500V, RES 60% = fie [= Tao Isolation Voltage BVg [AC 1 minute 2500 | — | — [Vrms TPSSEMICONDUCTOR TLP521-1, TLP521-2, TLP521-4 TOSHIBA TECHNICAL DATA wary SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTBRISTIC | SYMBOL | TEST CONDITION | AN, [TWP JAK [ONT as Tine = — Fal Tie ‘¢ STS], ‘Turn-on Time ton — 3 _ |“ Turnof Tine on =Tat= Turon Tine ‘ON =[2t= “ Ry =1.8K0 ig) : Storage Tine REESE TE = is [J « Turvoff Tine ‘ome = as t= Fig SWITCHING TIME TEST ciRcUT Ip Rp Vec ir ‘ Vor pave Vor | | ov wow. tore RECOMMENDED OPERATING CONDITIONS cHaracteristic | symBo | man. | TyP. [Max.|UNIT] [Supply Voliage Yoo |— |e] ]¥ Forward Current Ip — [a6 [20 [ma [Collector Current To — [1 [10 [ma [Operating Temperature Toe | 25) — | 85 | C TPSSEMICONDUCTOR TLP521-1, TLP521-2, TLP521-4 TOSHIBA TECHNICAL DATA Cry TuPsar-2 vets I= ve HPi2id ip — te 5 5 a i & ol a Be FE Ee al Be al i 2 Bo a sume TEMPERATURE 6 60 AE HMPRRATERE 5 mur murat Po = Te HBB po =e © ol 3 = 2") 2 a - AMBIENT TEMPERATURE. Ta (0) AMBIENT TEMPERATURE Ts (0) mp Jep = De ool PANE typ = 0 a Be z Ee ee eT a a DUTY CYCLE RATIO. Dp DUTY CYCLE RATIO Dp TPSSEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP521-1, TLP521-2, TLP521-4 Cry POLSEFORNARD CURRENT np ind) = ees 8 Ip - Ve ep - Ver. PULSE WIDTHS REEVE FREQUENCY ease PULSE FORWARD VOLTAGE. Yep «) lo - Vor CoLLECTORSMITTER VOLTAGE Vox AVp/ATe ~ Ip FORWARD CURRENT Ip) ozo = Te AMBIENT TEMPERATURE. Te) Ie ~ Vor ‘COLLECTOREMITTER VOLTAGE Ver) TS:SEMICONDUCTOR TLP521-1, TLP521-2, TLP521-4 TOSHIBA TECHNICAL DATA Cry Ig/tr — 1p i 2 : nee 5 a ce-sv . Vor) ~ 10 & ey ee E rorwann ccmaast ty on) E 8 EB 3 8 AMBIENT TEMPERATURE. Ta 60) SmTCHING MME Gs) Anne TewrEATURE TH co) LOAD RESISTANCE B, 12) TS: