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    The document describes simulations performed in NGSPICE to plot the DC characteristics of NMOS and PMOS transistors. It includes simulations to generate the input characteristics, output characteristics, and families of curves for both NMOS and PMOS transistors by sweeping the voltages applied and varying device parameters. The aim is to understand the behavior of MOSFETs by analyzing the relationships between gate voltage, drain current, and other variables.

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    112107005_Lab_1

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    The document describes simulations performed in NGSPICE to plot the DC characteristics of NMOS and PMOS transistors. It includes simulations to generate the input characteristics, output characteristics, and families of curves for both NMOS and PMOS transistors by sweeping the voltages applied and varying device parameters. The aim is to understand the behavior of MOSFETs by analyzing the relationships between gate voltage, drain current, and other variables.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    3 views8 pages

    Lab 1

    Uploaded by

    abc abc
    The document describes simulations performed in NGSPICE to plot the DC characteristics of NMOS and PMOS transistors. It includes simulations to generate the input characteristics, output characteristics, and families of curves for both NMOS and PMOS transistors by sweeping the voltages applied and varying device parameters. The aim is to understand the behavior of MOSFETs by analyzing the relationships between gate voltage, drain current, and other variables.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 8

    CMOS Lab 1

    Aim:
    To plot DC characteristics of NMOS and PMOS transistors using NGSPICE.
    Code and Output:
    1. NMOS Input Characteristics
    .include tsmc_180nm.txt
    vin 1 0 1.8
    vdd 2 0 1.8
    Mn 2 1 0 0 cmosn W = 200n L = 180n
    .control
    run
    dc vin 0 1.8 10m
    plot -i(vdd)
    .endc
    .end
    2. Family of NMOS Input Characteristics
    .include tsmc_180nm.txt
    vin 1 0 1.8
    vdd 2 0 1.8
    Mn 2 1 0 0 cmosn W = 200n L = 180n
    .control
    run
    dc vin 0 1.8 10m vdd 0 1.8 0.1
    plot -i(vdd)
    .endc
    .end
    3. NMOS Output Characteristic
    .include tsmc_180nm.txt
    vin 1 0 1.8
    vdd 2 0 1.8
    Mn 2 1 0 0 cmosn W = 200n L = 180n
    .control
    run
    dc vdd 0 1.8 10m
    plot -i(vdd)
    .endc
    .end
    4. Family of NMOS Output Characteristics
    .include tsmc_180nm.txt

    vin 1 0 1.8
    vdd 2 0 1.8
    Mn 2 1 0 0 cmosn W = 200n L = 180n

    .control
    run
    dc vdd 0 1.8 10m vin 0 1.8 0.1
    plot -i(vdd)
    .endc
    .end
    5. PMOS Input Characteristics
    .include tsmc_180nm.txt

    vin 1 0 -1.8
    vdd 2 0 -1.8
    Mp 2 1 0 0 cmosp W = 200n L = 180n

    .control
    run
    dc vin -1.8 0 10m
    plot i(vdd)
    .endc
    .end
    6. Family of PMOS Input Characteristics
    .include tsmc_180nm.txt

    vin 1 0 -1.8
    vdd 2 0 -1.8
    Mp 2 1 0 0 cmosp W = 200n L = 180n

    .control
    run
    dc vin -1.8 0 10m vdd -1.8 0 0.1
    plot i(vdd)
    .endc
    .end
    7. PMOS Output Characteristics
    .include tsmc_180nm.txt

    vin 1 0 -1.8
    vdd 2 0 -1.8
    Mp 2 1 0 0 cmosp W = 200n L = 180n

    .control
    run
    dc vdd -1.8 0 10m
    plot i(vdd)
    .endc
    .end
    8. Family of PMOS Output Characteristics
    .include tsmc_180nm.txt

    vin 1 0 -1.8
    vdd 2 0 -1.8
    Mp 2 1 0 0 cmosp W = 200n L = 180n

    .control
    run
    dc vdd -1.8 0 10m vin -1.8 0 0.1
    plot i(vdd)
    .endc
    .end

    ARYAN BATHIA
    112107005
    A BATCH

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