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  • BJT-CE Input Characteristics

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    This document describes an experiment to measure the input characteristics of a BJT transistor. The experiment varies the base-emitter voltage from 0.16V to 0.94V in increments while measuring the corresponding base current. As the base-emitter voltage increases, the base current also increases. The collector-emitter voltage is held at 2.2V during the experiment.

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    This document describes an experiment to measure the input characteristics of a BJT transistor. The experiment varies the base-emitter voltage from 0.16V to 0.94V in increments while measuring the corresponding base current. As the base-emitter voltage increases, the base current also increases. The collector-emitter voltage is held at 2.2V during the experiment.

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    9 views1 page

    BJT-CE Input Characteristics

    Uploaded by

    noelprojects11
    This document describes an experiment to measure the input characteristics of a BJT transistor. The experiment varies the base-emitter voltage from 0.16V to 0.94V in increments while measuring the corresponding base current. As the base-emitter voltage increases, the base current also increases. The collector-emitter voltage is held at 2.2V during the experiment.

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    © All Rights Reserved
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    BJT- CE INPUT CHARACTERISTICS

    INSTRUCTION CONTROLS

    EXPERIMENTAL TABLE Rh1 Ohms 100


    Rh2 Ohms 22
    Collector-Emitter Voltage
    2.200 V
    Serial
    No. Base-Emitter
    Base Add to Table Plot Clear
    Voltage
    Current(μA)
    V
    2
    1 0.1600 2.549 1 3
    0 4
    2 0.2400 2.853
    20 IC 4.236
    3 0.2800 3.019 10 30
    0 40
    4 0.3400 3.286
    IB 34.86
    5 0.4000 3.577
    6 0.4200 3.680 4 6
    2 8
    1
    7 0.5800 4.615 0 10
    8 0.6600 5.170 0 2
    VCE 2.200
    9 0.7000 5.472 VBE 2.000 Rh2
    Rh1
    VBB VCC
    10 0.7600 5.958
    11 0.8200 6.489
    12 0.8600 6.868
    13 0.9000 7.270
    14 0.9400 7.695

    GRAPH PLOT
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    Copyright © 2011 Indian Institute of


    Technology Kharagpur, Licensing Terms

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