Compact Terahertz Surface Plasmon Switch inside a Two Dimensional

Electron Gas Layer

Mohammad Ali Khorrami, Samir EI-Ghazaly, Shui-Qing Yu, Hammed Naseem

Dep. of Electrical Engineering, University of Arkansas, Fayetteville, 3217 Bell Engineering Center,
Fayetteville, AR72701

Abstract - The possibility of realizing a terahertz (THz) comparable performances with respect to the other state of the
switch by employing Surface Plasmons (SPs) along a Two
art THz detection techniques [7]. However, active steering of
Dimensional Electron Gas (2DEG) layer of a hetero-structure is
SPs is required before the promise of a complete THz
presented. It is shown that SP's properties may be easily
controlled by changing the motion of the electrons inside the plasmonic circuit becomes achievable.
2DEG. The electron drift velocity is controlled by applying an In this paper, we present a novel method to obtain a THz
external bias voltage at the 2DEG's ends. A compact and efficient plasmonic switch inside the 2DEG layer of a hetero-structure.
THz switch with high OnlOFF signal ratio is reported using this
Lately, it has been reported that SPs' wave properties such as
concept. The control voltage of the switch is considerably low. A
propagation constants and phase velocities can be controlled
multi-physic simulator, based on numerical solution of Maxwell's
and Boltzmann's equations, is developed to analyze the switch by changing the bias voltage applied at the 2DEG's ends [6].
appropriately. This micro-meter size plasmonic switch The electric field induced by the bias voltage accelerates the
demonstrates a very promising method for navigating the sub­ electrons of the 2DEG. This motion alters how effectively
wavelength THz signals inside future plasmonic circuits.
electrons and wave interact with each other and consequently;
Index Terms - Active circuit, Boltzmann's equation,
SPs' wave properties will change vastly. In particular, two
Maxwell's equation, surface plasmon, terahertz.
normal SP modes along an unbiased hetero-structure will
divide into four new modes as the electrons' drift motion is
I. INTRODUCTION included [6]. It can be shown that the SP mode that propagates
against the electron stream is very lossy. Here, the
Recently, many researches are aimed at THz frequency
modification of SPs' properties, caused by the biasing, is
range, the less explored section of electromagnetic spectrum
employed to introduce a new concept for switching SPs. In
located between microwave and optical ranges. Operation of
order to simulate the proposed device, a full wave analysis
microwave devices in THz range is limited by the maximum
method first proposed in the study of high frequency
achievable electron velocity inside semiconductors. On the
transistors, so called global modeling [9] is employed.
other side, lower frequency edge of photonics is about 20 THz
In the following, a brief overview of the analytic method [6]
[1]. Besides, photonic devices are very bulky and their
and global modeling [9] is presented. Also, details of the
integration into modem nano-meter size packages is
simulated structure and designed plasmonic switch are
troublesome. In order to address these issues, application of
reported. Results and performance of the simulated switch are
Surface Plasmons (SPs) or propagating bound oscillations of
presented in section III.
electrons and EM field at a metal surface [2], is proposed [1]­
[3]. The SPs offer wavelengths that are several orders of
magnitude smaller than the radiative mode counterpart, and II. OVERVIEW OF THE MODELING TECHNIQUES AND DETAILS
phase velocities which are at least one order of absolute value OF THE SIMULATED DEVICE
larger than the electron velocity maximum.
Consider a 2DEG sheet with surface charge density no
Mostly, researches in the plasmonic area are focused in
confined inside a hetero-structure (Fig 1). The 2DEG's length
optical ranges where noble metals such as gold and silver are
is LJ while it is infinitely wide (along y axis). The hetero­
being used. However, SPs are not bound to the surface of the
structure is represented by two lossless semiconductors with
metals in THz frequency ranges and hence; those desired
similar dielectric constants E EoI;-, Eo 8.85xl0-J2(F/m).
properties are not observed anymore. In THz frequencies,
= =

Here, ground state spread of the 2DEG along z axis is assumed

application of highly doped semiconductor [4] or noble metals
to be negligible compared to SP decay length in this direction
with engineered surfaces [5] are proposed. Propagation of SPs
and therefore; only electron motion along x axis is taken into
along doped semiconductors suffers from large losses
account.
therefore; utilization of Two Dimensional Electron Gas
In [6], an analytical solution of Maxwell's and Boltzmann's
(2DEG) layers of hetero-structures with low SP losses is more
equations is presented as several assumptions are considered
popular [6]-[8]. Implementing THz plasmonic sources and
to make the analysis achievable. This method provides a
detectors, inside 2DEG layers of solid state devices such as
detailed characterization of TMX mode with time and position
High Electron Mobility Transistor (HEMT), is very appealing.
variations ofeimt-yx , where y=a+jf3. Noting that y, a, f3 and OJ
Novel plasmonic detectors inside 2DEG layers have shown

978-1-4673-1088-8/12/$31.00 ©2012 IEEE

Authorized licensed use limited to: SASTRA. Downloaded on March 20,2024 at 04:27:37 UTC from IEEE Xplore. Restrictions apply.
are propagation, attenuation, phase constants and angular of them will match the allowed SP mode's phase constant. In
frequency, respectively. As shown in [6], two normal SP this manner, this specific SP propagates toward -x. The SP
modes along the unbiased 2DEG with dispersion relations: launcher is placed next to the PEC modeling drain so that it
?
=+Jor
•
only excites -x moving SPs.
rl,2 -
(1)
2a
divides into four new modes inside the biased 2DEG with III. RESULTS AND DISCUSSION
dispersion relations:
Inserting the 2DEG's properties and the transport
Alr,4 + Azr,3 + A3r,2 + A4r' + As 0 (2)
parameters into (1), propagation constants of SPs inside the
=

4 ·
where Al = Vo , Az = -2vo3IT.m - 4Jwvo3, A3 - -6W2 Vo2 + Vo2/Lm2 unbiased 2DEG are concluded: YI,2=±107x( O.16+j1.95) , These
_

+ 6wvo2IT.m + 4a2, A4 = 4jvow3 + 6voW2 / Lm - 2jvowlT.m2, As =
4
w w2IT.m2 - 2jw3lT.m, q=1.6xlO-19(C) and a = noq2/4Em*. Also,
_
't and m* are electron momentum relaxation time and
el;ctron effective mass, respectively.
Global modeling [9] provides a numerical solution of the
moments of Boltzmann's equation (momentum and charge
conservation) and Maxwell's equations. In this manner,
interactions between EM fields and moving electrons are
characterized. This numerical method eliminates several
assumptions taken in the analytical model and makes the
simulation more realistic.
In order to model the plasmonic switch inside the global
modeling simulator [9], the structure in Fig. 1 is employed. A
2-D Finite Difference Time Domain (FDTD) code is
developed that calculates field values inside a portion of the
semiconductor and air. For excitation, a magnetic current
sheet is placed above the structure so that evanescent modes
do not reach the device and hence; only planar waves hit the
device surface. Also, perfect match layers are applied to all
boundaries except the ones at source and drain. In these two
ends, a perfect electric conductor represents ohmic contacts. A
multi-grid mesh is applied along z axis to handle the negligible
modes will divide into four new modes (2) inside the biased
2DEG with propagation constants: Y;=108x ( O.03+j1.65) ,
Y; =108x( O.44-jO.05) Y; =WSx (-OA-jO.02) and
y�=WSx( O.07+jO.1l) . Considering the SPs' phases constants
th
along the biased 2DEG, it is concluded that the I SI and the 4
modes are propagating toward +x while the other two modes
are moving in the opposite direction. Noticing the propagation
n
constants of the -x moving SPs', it is realized that the 2 d
mode is a growing mode while the 3rd one faces losses as it
propagates. By positioning the SP launcher next to drain, it is
expected that both -x moving SPs become excited. However,
only the 3rd mode is launched inside our structure and will be
employed as follows. Comparing the magnitude of the
attenuation constants in the un-biased device and the 3rd mode
of the biased 2DEG, it is clear that the 3rd mode propagates
with several orders of magnitude larger losses. Therefore, one
can switch off SPs' propagation by controlling the bias
voltage. The signal attenuation of the switch in the ON state is
approximately 13dB//lm while it is about 340dB/ /lm in the
OFF state.
PML
---------------------,

thickness of the 2DEG. The 2DEG is represented by one unit

I
cell thick electric current source inside the FDTD simulator. I I
Mesh sizes along x axis and time step dt are defined to satisfy I I
the stability criteria of both EM and transport solvers. A I I
I Air
I
2DEG thickness d and surface charge density no is considered I E,.=l I
here. The 2DEG is located h below the surface of an PML I
I
pML
2
AIGaAs/GaAs hetero-structure that is represented by a LI =1.5/lffi
dielectric Er with thickness hI . It is assumed that the 2DEG is
terminated by two ohmic contacts with fixed equilibrium
charge density Nc = no/d. The source contact is grounded
while the drain contact is connected to a control voltage. The
control voltage switches between 0 in ON state and 40(mV) in
Sou rain
OFF state of the plasmonic switch. Transport parameters are:
m* = O.063xmo (mo=9.lxlO-3Ikg) and Lm = 2ps.
Due to the intrinsic phase difference between the incident PML
wave and the SPs, a special technique is required to launch the
Fig. 1. 2-D schematic of the simulated structure (figure not scale).
SPs. In this work, a zero thickness perfect electric conductor
layer, called SP launcher, is placed on the top surface of the
device next to the drain. The length of the SP launcher Lp is
chosen very small compared to the wavelength of the incident
field and therefore; considerable amount of the incident wave
diffracts from the edges of the SP launcher. The diffracted
wave experiences different phase constants which at least one

978-1-4673-1088-8/12/$31.00 ©2012 IEEE

Authorized licensed use limited to: SASTRA. Downloaded on March 20,2024 at 04:27:37 UTC from IEEE Xplore. Restrictions apply.
 o.1 ,.-----.----.--..--,
employing a hetero-structure with better quality and lower
0.6
o.o� a) SPs 0.4
SP launche� I electron scatterings. Also, a high efficiency plasmon launcher
z(lJlnr��� '\. 0.2
·0.15
should be designed. Beside, a sophisticated matching network
·0.2 ·0.2 placed at input and output is required before employing the
. 0.25�----:': .6-X----:'
0.3:-----::0":- 9 -
O. :- - --,1:':.2----}
0
( fII11 )
1 .5 switch inside a plasmonic circuit. It seems that the switching
2.5 speed is mainly controlled by the time response of the circuit
SPlaunche�
that drives the bias. Therefore, the switching speed is expected
1.5 to be in the order of nano second. In spite of these challenges,
0.5 the basic method reported here provides promising potentials
0.3 0.6 9 for the design of active THz devices with micro-meter
X fII11
( ) 0. 1.2
dimensions.
Fig. 2 Normalized x component of electric fields inside parts of
the device and air at xz-plane a) SPs are propagating along the 2DEG
as bias voltage is zero (ON state). b) SPs are attenuated as bias is set ACKNOWLEDGEMENT
to 40(mV) (OFF state).
Research was sponsored by the Army Research Laboratory
and was accomplished under Cooperative Agreement Number
W911NF-10-2-0072. The views and conclusions contained in
this document are those of the authors and should not be
interpreted as representing the official policies, either
expressed or implied, of the Army Research Laboratory or the
U. S. Government. The U. S. Government is authorized to
....
c:
� ·0.4
reproduce and distribute reprints for Government purposes not
o m
Co withstanding any copyright notation herein.
E ·0.6
m
o
<.)
>< .0.8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
REFERENCES
x (J..lrn)
[I] Lee and M C. Wanke, "Searching for solid-state terahertz
Fig. 3 Calculated x component of electric field at z = 120nm. technology", Science, vol. 3 16, pp. 64-65, 2007.
Phase and attenuation constants of SPs in the ON state are estimated [2] K. F. MacDonald, Z. L. Samson, M. I. Stockman and N. I.
7 Zheludev, "Ultrafst active plasmonics", Nature Photonics, vol.
as: �= 1.96x 10 (Rad/m) and exp(-ax320nm) = -0. 2 1/-0.37 or a =
7 3, pp. 55-58,Jan. 2009
0. 17x10 (np/m).
[3] E. Ozbay, "Plasmonics: Merging photonics and electronics at
nanoscale dimensions", Science, vol. 3 1 1, pp. 189-193, Jan.
Fig. 2.a shows ac electric field distribution inside the un­ 2006.
biased device (V ds 0) at a specific time instant of simulation
= [4] S. A. Maier, Plasmonics: Fundamentals and applications.
Springer, 2007, ch. 6.
to. As calculated, SPs are propagating along the un-biased
[5] Z. Fu, Q. Gan, Y. J. Ding and F. J. Bartoli, "From waveguiding
2DEG toward -x. As the bias voltage changes to V ds =

to spatial localization ofTHz waves within a plasmonic metallic

40(mV), electrons are accelerated by the bias field and hence; grating", IEEE J. Sel. Topics Quantum Electron., vol. 14, no. 2,
d
the 3r mode is launched. In Fig. 2.b, electric field distribution pp. 486-490, Apr. 2008.
of SPs at time to inside the biased device is presented. [6] M. A. Khorrami, S. EI-Ghazaly, S. Q. Yu, H. Naseem,
"Analytical modeling of THz wave propagation inside ungated
Comparing these field distributions, it is shown how
two dimensional electron gas layers", Int. IEEE Microw. Symp.,
effectively this switching technique is able to disconnect the
Baltimore,Jun. 20 1 1.
flow of SPs. In Fig. 3, the electric field distributions along the [7] G. C. Dyer, G. R. Aizin, J. L. Reno, E. A. Shaner and S. 1.
2DEG of both biased and unbiased structures are compared. Allen, "Novel tunable millimeter-wave grating-gated plasmonic
SPs' properties along the unbiased 2DEG clearly follow the detectors", IEEE J. Sel. Topics Quantum Electron., vol, 17, no.
I, pp. 85-91, Feb. 20 1 1.
analytical modeL
[8] T. A. Elkhatib, V. Y. Kachorovskii, W. J. Stillman, D. B.
Veksler, K. N. Salama, X. Zhang and M. Shur, "Enhanced
plasma wave detection of terahertz radiation using multiple high
IV. CONCLUSION
electron-mobility transistors connected in series," IEEE Trans.
In this paper, an active method for controlling SP signal at Microw. Theory & Tech., vol. 58, no. 2, pp. 331-339, 20\ O.
[9] R. O. Grondin, S. EI-Ghazaly and S. Goodnick, "A review of
THz frequencies is demonstrated. It is shown that by changing
global modeling of charge transport in semiconductors and full­
the bias voltage across the device ends, a SP switch is viable
wave electromagnetics", IEEE Trans. Microw. Theory & Tech.,
in a very compact dimension. However, further investigations vol. 47, no. 6, pp. 8 17-829, Jun. 1999.
are required before implementing the idea proposed here.
First, large attenuation in the ON state should be addressed by

978-1-4673-1088-8/12/$31.00 ©2012 IEEE

Authorized licensed use limited to: SASTRA. Downloaded on March 20,2024 at 04:27:37 UTC from IEEE Xplore. Restrictions apply.