DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

BC107; BC108; BC109

NPN general purpose transistors
Product specification 1997 Sep 03
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification

NPN general purpose transistors BC107; BC108; BC109

FEATURES PINNING
• Low current (max. 100 mA) PIN DESCRIPTION
• Low voltage (max. 45 V). 1 emitter
2 base
APPLICATIONS 3 collector, connected to the case
• General purpose switching and amplification.

DESCRIPTION handbook, halfpage

1 3
2
NPN transistor in a TO-18; SOT18 metal package.
2
PNP complement: BC177.
3 MAM264
1

Fig.1 Simplified outline (TO-18; SOT18)

and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter
BC107 − 50 V
BC108; BC109 − 30 V
VCEO collector-emitter voltage open base
BC107 − 45 V
BC108; BC109 − 20 V
ICM peak collector current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 300 mW
hFE DC current gain IC = 2 mA; VCE = 5 V
BC107 110 450
BC108 110 800
BC109 200 800
fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − MHz

1997 Sep 03 2
Philips Semiconductors Product specification

NPN general purpose transistors BC107; BC108; BC109

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC107 − 50 V
BC108; BC109 − 30 V
VCEO collector-emitter voltage open base
BC107 − 45 V
BC108; BC109 − 20 V
VEBO emitter-base voltage open collector
BC107 − 6 V
BC108; BC109 − 5 V
IC collector current (DC) − 100 mA
ICM peak collector current − 200 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 300 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 175 °C
Tamb operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 0.5 K/mW
Rth j-c thermal resistance from junction to case 0.2 K/mW
Note
1. Transistor mounted on an FR4 printed-circuit board.

1997 Sep 03 3
Philips Semiconductors Product specification

NPN general purpose transistors BC107; BC108; BC109

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 20 V − − 15 nA
IE = 0; VCB = 20 V; Tj = 150 °C − − 15 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V − − 50 nA
hFE DC current gain IC = 10 µA; VCE = 5 V
BC107A; BC108A − 90 −
BC107B; BC108B; BC109B 40 150 −
BC108C; BC109C 100 270 −
hFE DC current gain IC = 2 mA; VCE = 5 V
BC107A; BC108A 110 180 220
BC107B; BC108B; BC109B 200 290 450
BC108C; BC109C 420 520 800
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV
IC = 100 mA; IB = 5 mA − 200 600 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV
IC = 100 mA; IB = 5 mA; note 1 − 900 − mV
VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 550 620 700 mV
IC = 10 mA; VCE = 5 V; note 2 − − 770 mV
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2.5 6 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 9 − pF
fT transition frequency IC = 10 mA; VCB = 5 V; f = 100 MHz 100 − − MHz
F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
BC109B; BC109C f = 30 Hz to 15.7 kHz − − 4 dB
F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
BC107A; BC108A f = 1 kHz; B = 200 Hz − − 10 dB
BC107B; BC108B; BC108C
BC109B; BC109C − − 4 dB

Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.

1997 Sep 03 4
Philips Semiconductors Product specification

NPN general purpose transistors BC107; BC108; BC109

PACKAGE OUTLINE

Metal-can cylindrical single-ended package; 3 leads SOT18/13

j α seating plane

B w M A M B M

1
b

k
D1
2

A D A L

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A a b D D1 j k L w α

5.31 0.47 5.45 4.70 1.03 1.1 15.0

mm 2.54 0.40 45°
4.74 0.41 5.30 4.55 0.94 0.9 12.7

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT18/13 B11/C7 type 3 TO-18 97-04-18

1997 Sep 03 5
Philips Semiconductors Product specification

NPN general purpose transistors BC107; BC108; BC109

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Sep 03 6
Philips Semiconductors Product specification

NPN general purpose transistors BC107; BC108; BC109

NOTES

1997 Sep 03 7
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SCA55
Date of release: 1997 Sep 03 Document order number: 9397 750 02817
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

    Order this document
SEMICONDUCTOR TECHNICAL DATA by BC307/D

 
 
PNP Silicon

COLLECTOR 
1

2
BASE

3
EMITTER

1
MAXIMUM RATINGS 2
3
BC BC BC
Rating Symbol 307 308C 309 Unit CASE 29–04, STYLE 17
Collector – Emitter Voltage VCEO –45 –25 –25 Vdc TO–92 (TO–226AA)

Collector – Base Voltage VCBO –50 –30 –30 Vdc

Emitter – Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –100 mAdc
Total Device Dissipation @ TA = 25°C PD 350 mW
Derate above 25°C 2.8 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.0 Watts
Derate above 25°C 8.0 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case RqJC 125 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC307 V(BR)CEO –45 — — Vdc
(IC = –2.0 mAdc, IB = 0) BC308C –25 — —
BC309B –25 — —
Emitter – Base Breakdown Voltage BC307 V(BR)EBO –5.0 — — Vdc
(IE = –100 mAdc, IC = 0) BC308C –5.0 — —
BC309B –5.0 — —
Collector–Emitter Leakage Current ICES
(VCES = –50 V, VBE = 0) BC307 — –0.2 –15 nAdc
(VCES = –30 V, VBE = 0) BC308C — –0.2 –15
BC309B — –0.2 –15

(VCES = –50 V, VBE = 0) TA = 125°C BC307 — –0.2 –4.0 µA

(VCES = –30 V, VBE = 0) TA = 125°C BC308C — –0.2 –4.0

BC309B — –0.2 –4.0

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
     

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = –10 µAdc, VCE = –5.0 Vdc) BC307B/309B — 150 —
BC307C/308C — 270 —

(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307 120 — 800

BC308C 120 — 800

(IC = –100 mAdc, VCE = –5.0 Vdc) BC307B/309B 200 290 460
BC307C/308C 420 500 800

BC307B/309B — 180 —
BC307C/308C — 300 —
Collector – Emitter Saturation Voltage VCE(sat) Vdc
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.10 –0.3
(IC = –10 mAdc, IB = see Note 1) — –0.30 –0.6
(IC = –100 mAdc, IB = –5.0 mAdc) — –0.25 —
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = –10 mAdc, IB = –0.5 mAdc) — –0.7 —
(IC = –100 mAdc, IB = –5.0 mAdc) — –1.0 —
Base–Emitter On Voltage VBE(on) –0.55 –0.62 –0.7 Vdc
(IC = –2.0 mAdc, VCE = –5.0 Vdc)

DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product fT MHz
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) BC307 — 280 —
BC308C — 320 —
BC309B — 360 —
Common Base Capacitance Ccbo — — 6.0 pF
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 Vdc, BC309 — 2.0 4.0
RS = 2.0 kΩ, f = 1.0 kHz) BC307 — 2.0 10
(IC = –0.2 mAdc, VCE = –5.0 Vdc, BC308C — 2.0 10
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) BC309B — 2.0 4.0

1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

      

2.0 –1.0
VCE = –10 V TA = 25°C
hFE, NORMALIZED DC CURRENT GAIN 1.5 –0.9
TA = 25°C VBE(sat) @ IC/IB = 10
–0.8

V, VOLTAGE (VOLTS)
1.0 –0.7 VBE(on) @ VCE = –10 V
–0.6
0.7
–0.5
0.5 –0.4
–0.3

0.3 –0.2
VCE(sat) @ IC/IB = 10
–0.1
0.2 0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

400 10
300 Cib
7.0
200

C, CAPACITANCE (pF)
150 VCE = –10 V 5.0 TA = 25°C
TA = 25°C
100
80 3.0
60 Cob
2.0
40
30

20 1.0
–0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40
IC, COLLECTOR CURRENT (mAdc) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Current–Gain — Bandwidth Product Figure 4. Capacitances

1.0 150
r b′, BASE SPREADING RESISTANCE (OHMS)
hob, OUTPUT ADMITTANCE (OHMS)

0.5 VCE = –10 V

f = 1.0 kHz 140
0.3 VCE = –10 V
TA = 25°C f = 1.0 kHz
130 TA = 25°C

0.1
120
0.05
0.03
110

0.01 100
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Output Admittance Figure 6. Base Spreading Resistance

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

     

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD

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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
◊ BC307/D
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

 DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A
NPN switching transistors
Product specification 1997 May 29
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification

NPN switching transistors 2N2222; 2N2222A

FEATURES PINNING
• High current (max. 800 mA) PIN DESCRIPTION
• Low voltage (max. 40 V). 1 emitter
2 base
APPLICATIONS 3 collector, connected to case
• Linear amplification and switching.

DESCRIPTION handbook, halfpage

1 3
2
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A. 2

3 MAM264
1

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter
2N2222 − 60 V
2N2222A − 75 V
VCEO collector-emitter voltage open base
2N2222 − 30 V
2N2222A − 40 V
IC collector current (DC) − 800 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
hFE DC current gain IC = 10 mA; VCE = 10 V 75 −
fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222 250 − MHz
2N2222A 300 − MHz
toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 250 ns

1997 May 29 2
Philips Semiconductors Product specification

NPN switching transistors 2N2222; 2N2222A

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
2N2222 − 60 V
2N2222A − 75 V
VCEO collector-emitter voltage open base
2N2222 − 30 V
2N2222A − 40 V
VEBO emitter-base voltage open collector
2N2222 − 5 V
2N2222A − 6 V
IC collector current (DC) − 800 mA
ICM peak collector current − 800 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
Tcase ≤ 25 °C − 1.2 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 200 °C
Tamb operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 350 K/W
Rth j-c thermal resistance from junction to case 146 K/W

1997 May 29 3
Philips Semiconductors Product specification

NPN switching transistors 2N2222; 2N2222A

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current
2N2222 IE = 0; VCB = 50 V − 10 nA
IE = 0; VCB = 50 V; Tamb = 150 °C − 10 µA
ICBO collector cut-off current
2N2222A IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA
IEBO emitter cut-off current IC = 0; VEB = 3 V − 10 nA
hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 −
IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 150 mA; VCE = 1 V; note 1 50 −
IC = 150 mA; VCE = 10 V; note 1 100 300
hFE DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C
2N2222A 35 −
hFE DC current gain IC = 500 mA; VCE = 10 V; note 1
2N2222 30 −
2N2222A 40 −
VCEsat collector-emitter saturation voltage
2N2222 IC = 150 mA; IB = 15 mA; note 1 − 400 mV
IC = 500 mA; IB = 50 mA; note 1 − 1.6 V
VCEsat collector-emitter saturation voltage
2N2222A IC = 150 mA; IB = 15 mA; note 1 − 300 mV
IC = 500 mA; IB = 50 mA; note 1 − 1 V
VBEsat base-emitter saturation voltage
2N2222 IC = 150 mA; IB = 15 mA; note 1 − 1.3 V
IC = 500 mA; IB = 50 mA; note 1 − 2.6 V
VBEsat base-emitter saturation voltage
2N2222A IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V
IC = 500 mA; IB = 50 mA; note 1 − 2 V
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 8 pF
Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz
2N2222A − 25 pF
fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz
2N2222 250 − MHz
2N2222A 300 − MHz
F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
2N2222A f = 1 kHz; B = 200 Hz − 4 dB

1997 May 29 4
Philips Semiconductors Product specification

NPN switching transistors 2N2222; 2N2222A

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Switching times (between 10% and 90% levels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns
td delay time − 10 ns
tr rise time − 25 ns
toff turn-off time − 250 ns
ts storage time − 200 ns
tf fall time − 60 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

ndbook, full pagewidth VBB VCC

RB RC
(probe) Vo (probe)
oscilloscope oscilloscope
450 Ω 450 Ω
R2
Vi DUT

R1

MLB826

Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

1997 May 29 5
Philips Semiconductors Product specification

NPN switching transistors 2N2222; 2N2222A

PACKAGE OUTLINE

Metal-can cylindrical single-ended package; 3 leads SOT18/13

j α seating plane

B w M A M B M

1
b

k
D1
2

A D A L

0 5 10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A a b D D1 j k L w α

5.31 0.47 5.45 4.70 1.03 1.1 15.0

mm 2.54 0.40 45°
4.74 0.41 5.30 4.55 0.94 0.9 12.7

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT18/13 B11/C7 type 3 TO-18 97-04-18

1997 May 29 6
Philips Semiconductors Product specification

NPN switching transistors 2N2222; 2N2222A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 May 29 7
Philips Semiconductors – a worldwide company
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© Philips Electronics N.V. 1997
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SCA54
Date of release: 1997 May 29 Document order number: 9397 750 02161
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

  Order this document
SEMICONDUCTOR TECHNICAL DATA by 2N3905/D

    

PNP Silicon
 
*Motorola Preferred Device
COLLECTOR
3

2
BASE

1
EMITTER
1
MAXIMUM RATINGS 2
3
Rating Symbol Value Unit
CASE 29–04, STYLE 1
Collector – Emitter Voltage VCEO 40 Vdc TO–92 (TO–226AA)
Collector – Base Voltage VCBO 40 Vdc
Emitter – Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Power Dissipation @ TA = 60°C PD 250 mW
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS(1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to RqJA 200 °C/W
Ambient
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) V(BR)CEO 40 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 40 — Vdc
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 10 mAdc, IC = 0)
Base Cutoff Current IBL — 50 nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current ICEX — 50 nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v
2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3905 30 —
2N3906 60 —

(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 40 —

2N3906 80 —

(IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 50 150

2N3906 100 300

(IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 30 —

2N3906 60 —

(IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 15 —

2N3906 30 —

Collector – Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 mAdc, IB = 1.0 mAdc) — 0.25
(IC = 50 mAdc, IB = 5.0 mAdc — 0.4
Base – Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) — 0.95

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3905 200 —
2N3906 250 —
Output Capacitance Cobo — 4.5 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.5 8.0
2N3906 2.0 12
Voltage Feedback Ratio hre X 10– 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 0.1 5.0
2N3906 0.1 10
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 50 200
2N3906 100 400
Output Admittance hoe mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N3905 1.0 40
2N3906 3.0 60
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) 2N3905 — 5.0
2N3906 — 4.0

SWITCHING CHARACTERISTICS
Delay Time ((VCC = 3.0 Vdc,, VBE = 0.5 Vdc,, td — 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr — 35 ns
Storage Time 2N3905 ts — 200 ns
2N3906 — 225
(VCC = 3.0 Vdc, IC = 10 mAdc,
Fall Time IB1 = IB2 = 1.0 mAd 2N3905 tf — 60 ns
2N3906 — 75

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
3V 3V
+9.1 V < 1 ns

275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0 Cobo
Q, CHARGE (pC)

1000
700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)

100 100
70 70
TIME (ns)

50 tr @ VCC = 3.0 V 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time Figure 6. Fall Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

5.0 12
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 W IC = 0.5 mA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA 6
2.0
4 IC = 50 mA

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 mA 2

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)

Figure 7. Figure 8.

h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)

300 100
hoe, OUTPUT ADMITTANCE (m mhos)

70

50
h fe , DC CURRENT GAIN

200

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Current Gain Figure 10. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
– 55°C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

1.0 1.0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)

TJ = 25°C VBE(sat) @ IC/IB = 10

0.5 +25°C TO +125°C
0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0
0.6 – 55°C TO +25°C

– 0.5
0.4 +25°C TO +125°C
– 1.0
VCE(sat) @ IC/IB = 10 – 55°C TO +25°C
0.2 qVB FOR VBE(sat)
– 1.5

0 – 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. “ON” Voltages Figure 16. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

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6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N3905/D
 BF245A/BF245B/BF245C
BF245A/BF245B/BF245C

N-Channel Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50.

1 TO-92
1. Gate 2. Source 3. Drain

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-Source Voltage -30 V
IGF Forward Gate Current 10 mA
PD Total Device Dissipation @TA=25°C 350 mW
Derate above 25°C 2.8 mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA -30 V
VGS Gate-Source BF245A VDS = 15V, ID = 200µA -0.4 -2.2 V
BF245B -1.6 -3.8
BF245C -3.2 -7.5
VGS(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 10nA -0.5 -8 V
IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA
On Characteristics
IDSS Zero-Gate Voltage Drain Current
BF245A VGS = 15V, VGS = 0 2 6.5 mA
BF245B 6 15
BF245C 12 25
On Characteristics
gfs Common Source Forward VGS = 15V, VGS = 0, f = 1KHz 3 6.5 mmhos
Transconductance

©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003

 BF245A/BF245B/BF245C
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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©2003 Fairchild Semiconductor Corporation Rev. I2