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𝑒.𝑉
𝐽(𝑉) = 𝐽0 . [𝑒 𝑘𝐵.𝑇 − 1] − 𝐽𝑝ℎ
𝑒.(𝑉−𝐽𝑅𝑠 ) 𝑉 − 𝐽𝑅𝑠
(𝑉) = 𝐽0 . [𝑒 𝑛.𝑘𝐵 .𝑇 − 1] + − 𝐽𝑝ℎ
𝑅𝑃
3) Write down the equation for determining the Voc when knowing Jsc and J0.
4) Write down the diode equation for a Shottky type junction. Explain J0 for a Shottky
type junction. Which parameters are controlling the size of J0 in a Shottky junction?
J0 represents the reverse saturation current density, which is the current density that flows when
the diode is biased in the reverse direction. This current is due to the thermally generated
minority carriers (electrons or holes) that can tunnel through the barrier at the interface
between the metal and the semiconductor.
J0 in a Schottky junction is mainly controlled by the barrier height and width at the interface
between the metal and the semiconductor, as well as the temperature of the device. A higher
barrier height and/or width leads to a smaller J0, while a higher temperature leads to a larger
J0.