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Physics Passing Package for II P U students -2021-2022

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CHAPTER: 03: CURRENT ELECTRICITY
:Two mark questions:
1. On what factors does the resistance of a conductor depend? (A-2018E)
i) Length of conductor
ii) Area of cross of conductor
iii) Temperature of conductor
iv) Nature of conductor
2. Mention the factors on which resistivity of a metal depend.
i) Temperature of conductor
ii) Nature of conductor
3. Write the expression for drift velocity in terms of current, explain the terms used. (A-2019)
𝐼
𝑣𝑑 = 𝑛 𝐴 𝑒

where I: Current in conductor

n: Number of electrons per unit volume
A : Area of cross of conductor
e: Charge on electron
4. Define emf and internal resistance of a cell. (A-2021)
The emf of a cell is defined as the pd between the terminal of the cell in an open circuit.
The resistance offered by the cell to the flow of current through is called the internal resistance of cell.
5. State and explain Ohm’s law. ( A-2017)
Statement: The current through a conductor is directly proportional to the pd. across its ends, provided the
temperature and other physical conditions remain constant.
Explanation: 𝐼∝𝑉 𝑜𝑟 𝑉∝𝐼
𝑉 = 𝑅 𝐼 where R is a constant of proportionality called electric resistance of the conductor.
6. State Kirchhoff’s rules of electric network. (A-2018)
Kirchhoff’s Junction rule:
Statement: At any junction, the sum of currents entering the junction is equal to the sum of currents leaving
the junction
Kirchhoff’s loop rule:
Statement: The algebraic sum of all voltages i.e, the potential drops across all resistors and emf’s of all cells
in any loop is zero.
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7. Define mobility. Mention its SI unit. (S-2017)

Ans: The mobility is defined as the magnitude drift velocity of electrons per unit electric field applied.
SI unit of mobility is 𝒎𝟐 /𝑽𝑺.
8. Define the terms ‘Drift velocity and ‘mobility’ of free electrons. (S-2020)
Drift velocity is defined as the average velocity with which free electrons are drifted in a conductor opposite
to the external electric field.
Mobility is defined as the magnitude drift velocity of electrons per unit electric field applied.
9. What is ohmic device? Give one example.(S-2017)
The device which obey the Ohm’s law is called ohmic divice.
Ex: Galvanometer, Ammeter, Voltmeter
10. Represent graphically the variation of resistivity with absolute temperature for copper nichrome metals
and semiconductor.(S-2018)

Figure (a): Variation of resistivity (𝜌) of copper as a function of absolute temperature ( T )

Figure (b): Variation of resistivity (𝜌) of nichrome as a function of absolute temperature ( T )
Figure (c): Variation of resistivity (𝜌) of semiconductor as a function of absolute temperature ( T )
11. Mention two uses of potentiometer.
i) Comparison of emf’s of cells
ii) Determination of internal resistance of a cell
12. What is non-ohmic device? Give one example.
The device which do not obey the Ohm’s law is called non-ohmic device.
Ex: Semiconductors, Vacuum tubes,

:Three mark questions:

1. Derive an expression for drift velocity of free electrons in a conductor. ( A-2016 & S-2016)
Free electrons move randomly within the conductor. Thus the average velocity of electrons is zero.
𝑣⃗𝑖 = 0……………..(1)

When an external electric field 𝐸⃗⃗ is applied across the ends of the conductor, each electron
experiences a force. It is given by
𝐹⃗ = −𝑒𝐸⃗⃗
𝑚𝑎⃗ = −𝑒𝐸⃗⃗
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−𝑒𝐸⃗⃗
 𝑎⃗ = ……………….(2)
𝑚
where e – electronic charge, 𝑎⃗ – acceleration of the electron, m – mass of the electron.
Electrons are accelerated for an average time interval ‘τ’ called relaxation time. The average final
velocity of all electrons is called drift velocity. It is denoted by the symbol 𝑣⃗𝑑 .
𝑣⃗𝑑 = 𝑣⃗𝑖 + 𝑎⃗𝜏

−𝑒𝐸⃗⃗
𝑣⃗𝑑 = 0 + ( )𝜏
𝑚
⃗⃗⃗
𝒆𝑬
⃗⃗𝒅 = − 𝝉 ……………(3)
𝒗 𝒎

2. Derive the relation 𝑗⃗ = 𝜎 𝐸⃗⃗ with terms having usual meaning. (S-2017)
Consider a conductor of length ‘𝑙’ and area of cross section ‘A’. Let V be the potential difference
between the ends of the conductor and I be the current flowing through it.
According to Ohms’ law, we have
𝑉 = 𝐼𝑅 ………(1)
𝜌𝑙
where R is the resistance of the conductor and it is given by, 𝑅 = 𝐴
𝐼𝜌𝑙
∴ 𝑉= 𝐴
𝐼
𝑉 = 𝑗𝜌𝑙…………….(2) (∵ 𝐴 = 𝑗 )
If E is the electric field across the ends of the conductor, then.
𝑉 = 𝐸𝑙
∴ 𝐸𝑙 = 𝑗𝜌𝑙
∴ 𝐸 = 𝑗𝜌
𝐸
𝑗=
𝜌
1
𝑗 = 𝜎𝐸 ……….(3) (∵ 𝜌 = 𝜎 ) This is equivalent of Ohm’s law.

3. Derive 𝐼 = 𝑛 𝐴 𝑒 𝑣𝑑 where the symbols have their usual meaning

Length of conductor = 𝑙
Area of conductor = A
The number of free electrons / unit volume = n
Volume of the conductor = 𝐴 𝑙
Number of free electrons in the conductor = 𝑛𝐴𝑙
Total charge in the conductor = 𝑄 = (𝑛𝐴𝑙) × 𝑒 …… (1)
Let an electric field E be applied on the conductor. Free electrons are drifted. Hence the current flows
through the conductor.
Time taken by the electrons to travel the length of the conductor is given by,
𝑙
𝑡=𝑣 …(2) where vd – drift velocity of electrons.
𝑑
𝑄
By definition, current 𝐼= 𝑡
𝑛𝐴𝑙𝑒
 𝐼=
(𝑙⁄𝑣𝑑 )

 𝐼 = 𝑛𝑒𝐴𝑣𝑑 …………. (3)

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4. Assuming the expression for the drift velocity, derive the expression for conductivity of a material 𝜎 =
𝑛 𝑒2 𝜏
, where symbols have their usual meaning. (S-2015.S-2018, A-2020)
𝑚

The equivalent form of Ohm’s law is

𝑗 = 𝜎𝐸 ……………..(1)
In terms of drift velocity, current density is
𝑒𝐸
𝑗 = 𝑛𝑒𝑣𝑑 But 𝑣𝑑 = − 𝑚 𝜏
𝑒𝐸
∴ 𝑗 = 𝑛𝑒 𝑚 𝜏
𝑛𝑒 2 𝜏
Or 𝑗=( ) 𝐸 ……………(2)
𝑚

From equations (1) and (2), we have

𝒏𝒆𝟐 𝝉
𝝈= ……………(3)
𝒎

1
Since the resistivity, 𝜌 = 𝜎, we have
𝒎
𝝆 = 𝒏𝒆𝟐 𝝉 …………..(4)

5. Mention any three limitations of Ohm’s law. (A-2021)

i) The relation between 𝑉 𝑎𝑛𝑑 𝐼 is non linear.
ii) The relation between 𝑉 𝑎𝑛𝑑 𝐼 depends on the sign of 𝑉.
iii) The relation between 𝑉 𝑎𝑛𝑑 𝐼 is not unique.
Five mark questions:
1. What is equivalent resistance? Obtain the expression for the equivalent resistance of two resistors
connected in series.

Fig 1 Fig 2
The net pd across the combination is given by,
𝑉 = 𝑉1 + 𝑉2 ………. (1)
But by Ohm’s law, 𝑉 = 𝐼𝑅 i.e., 𝑉1 = 𝐼𝑅1 and 𝑉2 = 𝐼𝑅2
 𝑉 = 𝐼𝑅1 + 𝐼𝑅2
 𝑉 = 𝐼 [𝑅1 + 𝑅2 ] …………… (2)
Equivalent resistor: The single resistor which draws the same current as combination at same potential
Let the combination be replaced by an equivalent resistor RS, which draws the same current I at the
same pd V as shown in the fig (2). Then
𝑉 = 𝐼𝑅𝑆 ……………….. (3)
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From equations (2) and (3), we have

𝐼𝑅𝑆 = 𝐼[𝑅1 + 𝑅2 ]
 𝑅𝑆 = 𝑅1 + 𝑅2 ………… (4)

If n number of resistors is connected in series, we have

𝑅𝑆 = 𝑅1 + 𝑅2 + ⋯ … … . +𝑅𝑛 ………… (5)

2. What is equivalent resistance? Derive the expression for equivalent resistance of two resistors connected
in parallel. ( A-2014, A-2015)

Fig 1 Fig 2
The net current through the combination is given by,
𝐼 = 𝐼1 + 𝐼2 ………. (1)
𝑉
But by Ohm’s law 𝐼 = 𝑅
𝑉 𝑉
𝐼1 = 𝑅 , and 𝐼2 = 𝑅
1 2

𝑉 𝑉
 𝐼 =𝑅 +𝑅
1 2

1 1
 𝐼 = 𝑉 [𝑅 + 𝑅 ] ……. (2)
1 2

Equivalent resistor: The single resistor which draws the same current as combination at same potential.
Let the combination be replaced by an equivalent resistor Rp, which draws the same current I at the
same pd V as shown in the fig (2). Then
𝑉
𝐼 = 𝑅 ………………… (3)
𝑃

From equations (2) and (3), we have

𝑉 1 1
= 𝑉 [𝑅 + 𝑅 ]
𝑅𝑃 1 2

1 1 1
 = 𝑅 + 𝑅 ………… (4)
𝑅𝑃 1 2

1 1 1 1
If n number of resistors is connected in parallel, we have = 𝑅 + 𝑅 + ⋯ … … . . + 𝑅 ……(5)
𝑅𝑃 1 2 𝑛

3. Derive an expression for equivalent emf and equivalent internal resistance when two cells of different
emf’s and internal resistances are connected in series. (A-2017E, S-2020)

Let 𝑉𝐴 , 𝑉𝐵 and 𝑉𝐶 be the potentials at points A, B and C respectively.

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Pd between first cell 𝑉𝐴𝐵 = 𝑉𝐴 − 𝑉𝐵 = 𝜀1 − 𝐼𝑟1 …………….(1)

Pd between second cell 𝑉𝐵𝐶 = 𝑉𝐵 − 𝑉𝐶 = 𝜀2 − 𝐼𝑟2 …………….(2)
Pd between A and C, 𝑉𝐴𝐶 = 𝑉𝐴 − 𝑉𝐶
= (𝑉𝐴 − 𝑉𝐵 ) + (𝑉𝐵 − 𝑉𝐶 )
= (𝜀1 − 𝐼𝑟1 ) + (𝜀2 − 𝐼𝑟2 )
= (𝜀1 + 𝜀2 ) − (𝐼𝑟1 + 𝐼𝑟2 )
= (𝜀1 + 𝜀2 ) − 𝐼(𝑟1 + 𝑟2 )…………..(3)
Let the series combination of two cells be replaced by a single cell between A and C as shown in the
fig. Let 𝜀𝑒𝑞 be its emf and 𝑟𝑒𝑞 be its internal resistance.
𝑉𝐴𝐶 = 𝜀𝑒𝑞 − 𝐼𝑟𝑒𝑞 ……………(4)
From equations (3) and (4), we have
𝜀𝑒𝑞 = 𝜀1 + 𝜀2 ……………(5)

𝑟𝑒𝑞 = 𝑟1 + 𝑟2 …………… (6)

4. Obtain the expression for equivalent emf and the effective internal resistance of two cells connected in
parallel such that the currents are flowing in the same direction. (A-2018, A-2019)

 𝐼 = 𝐼1 + 𝐼2 ……………….(1)
Let 𝑉1 and 𝑉2 be the potentials at 𝐵1 and 𝐵2 respectively.
Pd between first cell, 𝑉 = 𝑉1 − 𝑉2 = 𝜀1 − 𝐼1 𝑟1
𝜀1 −𝑉
⟹ 𝐼1 = …………….(2)
𝑟1

Pd between second cell, 𝑉 = 𝑉1 − 𝑉2 = 𝜀2 − 𝐼2 𝑟2

𝜀2 −𝑉
⟹ 𝐼2 = …………….(3)
𝑟2

 Equation (1) becomes

𝜀1−𝑉 𝜀2−𝑉
𝐼= +
𝑟1 𝑟2

𝜀 𝑉 𝜀 𝑉
= 𝑟1 − 𝑟 + 𝑟2 − 𝑟
1 1 2 2

𝜀 𝜀 𝑉 𝑉
= ( 𝑟1 + 𝑟2 ) − (𝑟 + 𝑟 )
1 2 1 2
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𝜀 𝜀 1 1
= ( 𝑟1 + 𝑟2 ) − 𝑉 (𝑟 + 𝑟 )
1 2 1 2

𝜀1𝑟2 +𝜀2𝑟1 𝑟 +𝑟
=( ) − 𝑉 ( 𝑟1 𝑟 2 )
𝑟1 𝑟2 1 2

𝑟 +𝑟 𝜀1𝑟2 +𝜀2 𝑟1
𝑉 ( 𝑟1 𝑟 2 ) = ( )−𝐼
1 2 𝑟1 𝑟2

𝜀1 𝑟2 +𝜀2𝑟1 𝑟 𝑟 𝑟 𝑟
𝑉=( ) (𝑟 1+ 2𝑟 ) − 𝐼 (𝑟 1+ 2𝑟 )
𝑟1 𝑟2 1 2 1 2

𝜀1 𝑟2 +𝜀2𝑟1 𝑟 𝑟
𝑉=( ) − 𝐼 (𝑟 1+ 2𝑟 ) ………….(4)
𝑟1 + 𝑟2 1 2

Let the parallel combination of two cells be replaced by a single cell between 𝐵1 and 𝐵2 . Let 𝜀𝑒𝑞 be
its emf and 𝑟𝑒𝑞 be its internal resistance. Then
𝑉 = 𝜀𝑒𝑞 − 𝐼𝑟𝑒𝑞 ……………(5)
From equations (4) and (5), we have
𝜀1𝑟2 +𝜀2 𝑟1
𝜀𝑒𝑞 = ……………(6)
𝑟1 + 𝑟2

𝑟 𝑟
𝑟𝑒𝑞 = 𝑟 1+ 2𝑟 ……………(7)
1 2

5. Derive the condition for balance of Wheatstone’s bridge using Kirchhoff’s rules. (S-2015 , A-2016 , S-
2016, A-2017, A-2018E, S-2019
Applying KJR to the junction B and D, we have

𝐼2 = 𝐼4 + 𝐼𝑔 …………. (1)
𝐼3 = 𝐼1 + 𝐼𝑔 …………. (2)
Applying KLR to loops ABDA and BCDB, we have
−𝐼2 𝑅2 − 𝐼𝑔 𝐺 + 𝐼1 𝑅1 = 0 ………. (3)
−𝐼4 𝑅4 + 𝐼3 𝑅3 + 𝐼𝑔 𝐺 = 0 ……… (4)

The network is said to be balanced, if 𝑰𝒈 = 𝟎

The equations (1), (2), (3) and (4) become
𝐼2 = 𝐼4 ………… (5)
𝐼1 = 𝐼3 ………… (6)
−𝐼2 𝑅2 + 𝐼1 𝑅1 = 0
𝐼1 𝑅1 = 𝐼2 𝑅2
𝐼1 𝑅
= 𝑅2 --------------- (7)
𝐼2 1

−𝐼4 𝑅4 + 𝐼3 𝑅3 = 0
𝐼3 𝑅3 = 𝐼4 𝑅4
𝐼3 𝐼 𝑅
= 𝐼1 = 𝑅4 --------------- (8)
𝐼4 2 3
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From equations (7) and (8), we have

𝑹𝟐 𝑹𝟒
= …………. (9)
𝑹𝟏 𝑹𝟑

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CHAPTER-14: SEMICONDUCTOR ELECTRONICS

:Two marks questions:

1. Distinguish between intrinsic and extrinsic semiconductors.

Intrinsic semiconductors Extrinsic semiconductors

1.Pure form of semiconductors. 1.Impure form of semiconductors.
2. Number of electrons = Number of holes 2.Number of electrons ≠ Number of holes
3. Conductivity is due to both electrons & 3. Conductivity is due to electrons or holes.
holes.
4. Conductivity is less. 4. Conductivity is more.
5. It is not doped with any impurity. 5. It is doped with either pentavalent or trivalent
impurity.

2. Distinguish between n-type and p-type semiconductors. (A-2017E, A-2017, A-2019)

n-type semiconductors
1. Doped with pentavalent impurity.
2. Number of electrons > Number of holes
3. Electrons are majority carriers
4. Holes are minority carriers
5. Impurity is donor type
p-type semiconductors
1. Doped with trivalent impurity.
2. Number of holes > Number of electrons
3. Holes are majority carriers.
4. Electrons are minority carriers.
5. Impurity is acceptor type.

3. What are intrinsic semiconductors? Name the element used as dopant to obtain P-type
semiconductor. (S-2015)
Ans. The pure form of semiconductor in which conductivity is due to both electrons & holes is called
intrinsic semiconductor.
Dopant element is Indium.
4. What is a photo diode? Mention its one use. (A-2014)

Ans: A photo diode is a p-n junction made up of photo sensitive semiconductor and operates under
reverse bias below break down voltage
Photo diodes are as photodetector to detect optical signals

5. Mention any two applications of photo diode.

Ans. Applications of photo diodes are,
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1. As photodetector to detect optical signals

2. In light operated switches
3. In electronic counters
6. Mention any two applications of light emitting diode.
LED’s are used in
1. Display systems of television, computer, traffic signals etc.,
2. To indicate ON/OFF states
3. IR LED’s are used in remote controls of TV, VCR etc.,
4. Burglar alarm system,
7. Write any two advantages of light emitting diode(LED) over conventional incandescent low power
lamps. (S-2018)
Ans. Advantages of LEDs over incandescent power lamps:
1. Low operational voltage and less power.
2. Fast action and no warm up time required.
3. The emitted light is nearly monochromatic.
4. Long life and ruggedness.
5. Fast on-off switching capability.
8. What is NAND gate? Give its logic symbol. (A-2017)
Ans. NAND-gate is the combination of AND-gate and NOT-gate.

9. Write the circuit symbol and truth table for OR-gate. Truth table
Ans. Circuit symbol:

10. Write the logic symbol and truth table for AND-gate.(A-2018E)
Ans. Circuit symbol: Truth table

11. Write the circuit symbol and truth table for NOT-gate.
Ans. Circuit symbol: Truth table

12. Write the circuit symbol and truth table for NOR-gate.
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Ans. Circuit symbol: Truth table

13. Write the logic symbol and truth table of NAND-gate. (A-2016, A-2017)
Circuit symbol: Truth table

14. Name the universal gates in logic circuits.

Ans: NOR gate and NAND gate
15. Define the terms ‘cut-in voltage’ & reverse saturation current in a p-n junction diode

Cut-in-voltage: In forward bias, the voltage at which the current in semiconductor diode increases sharply is
called cut-in-voltage.
Reverse saturation current: When the diode is reverse biased, the reverse bias voltage produces a very
small current, which almost remains constant with bias. This small current is called reverse saturation
current.
:Three marks questions:
1. How is zener diode used as voltage regulator? (A-2014, S-2017, S-2018)
Ans:

The zener diode is connected in reverse bias to a source of fluctuating dc through a series resistance
𝑅𝑆 . Thus the voltage divides between 𝑅𝑆 and zener diode. The output is obtained across the load resistor 𝑅𝐿
connected in parallel with zener diode.
Working:
If the applied voltage increases, the current through 𝑅𝑆 and zener diode increase. This increases the
voltage drop across 𝑅𝑆 but the voltage drop across zener diode remains constant. Similarly when the input
voltage decreases, the voltage drop across 𝑅𝑆 decreases but the voltage drop across zener diode again
remains constant.

Thus any increase or decrease of the input voltage results in increase or decrease of voltage drop
across 𝑅𝑆 without any change in voltage drop across zener diode. Zener diode provides a constant voltage
from a source whose voltage may fluctuate. Hence the zener diode acts as a voltage regulator.
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2. Distinguish between conductor and semiconductor on the basis of band theory of solids with diagrams.
(A-2015, A-2018E)

Conductors:
Conductors are the materials in which valence band
and conduction band almost overlap (𝐸𝑔 = 0). Thus the
electrons in valence band are almost free to move to
conduction band. Hence large number of electrons is
available for electrical conduction. Therefore, the resistance
is low or conductivity is high.
Semiconductors:
Semiconductors are the materials in which the
Conduction band
energy gap between the valence band the conduction band is
finite but small ( 𝐸𝑔 < 3𝑒𝑉). Because of the small band gap,
at room temperature some electrons from valence band
acquire enough energy to cross energy gap and enter the Valance
conduction band. Therefore small number of electrons can band
move in the conduction band. Hence, the resistance of
semiconductors is not as high as that of the insulators.
3. What is a solar cell? Mention any two its uses.
Ans: A solar cell is a p-n junction which generates emf when solar radiations fall on it.
Uses: Solar cells are used
1. to power electronic devices in satellites and space vehicles.
2. As power supply to some calculators.
4. Mention the criteria for the selection of a material for solar cell fabrication.
Ans: Important criteria are
(i) Band gap
(ii) High optical absorption
(iii) Electrical conductivity
(iv) Availability of the raw material
(v) Cost.
5. What is NAND-gate? Write is logic symbol and truth table. (S-2019)
Ans: The NAND-gate is the combination of AND-gate and NOT-gate.
Logic symbol Truth table

6. Explain conduction band, valance band and energy gap in semiconductors. (A-2019)
Valence band (VB): The energy band which includes the energy levels of the valence electrons is called the
valence band. It may be completely filled or partially filled.
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Conduction band (CB): The energy band above the valence band is called the conduction band. At room
temperature CB may be partially filled but at 0 K, it is completely empty.
Energy gap: The gap between the top of the valence band and bottom of the conduction band is called
energy band gap or energy gap.
7. Mention the three optoelectronic junction devices.
Ans: Three optoelectronic junction devices are
(i) Photo diode
(ii) Light emitting diode
(iii) Solar cells

:Five marks questions:

1. What is rectification? With relevant circuit diagram and waveforms, explain the working of p-n junction
diode as a half wave rectifier. (A-2018E, S-2019, A-2020, A-2021)
The process of converting ac into dc is called rectification.

Fig 1 Fig 2

The circuit of half wave rectifier using a semiconductor diode is shown in fig (1). The diode D in
series with a load resistor 𝑅𝐿 is connected to the secondary of the transformer. The ac voltage to be
rectified is applied to the primary of the transformer. The secondary of a transformer supplies the desired
ac voltage across terminals A and B. The output dc voltage is taken across the load 𝑅𝐿 .
Working:
During the positive half cycle of input ac voltage, the end A becomes positive with respect to the end
B. As a result the diode becomes forward biased and conducts the current. The current flows in the
direction 𝐴𝐷𝑅𝐿 𝐵𝐴.
During the negative half cycle of input ac voltage, the end A becomes negative with respect to the
end B. As a result the diode becomes reverse biased and does not conducts the current.
Thus the current flows through the diode during positive half cycle only. The current flows through the
load 𝑅𝐿 always in the same direction. Hence dc output is obtained. The input and output signals are
shown in fig.2

2. Explain the working of p-n junction diode as a full wave rectifier with circuit diagram. Give input and
output waveforms. (S-2014) OR What is rectification? With relevant circuit diagram and waveforms,
explain the working of p-n junction diode as a full wave rectifier.(S-2015, A-2016, A-2017, S-2017, A-
2018)
The process of converting ac into dc is called rectification.
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The circuit of full wave rectifier using two semiconductor diodes is shown in fig (1). The p- sides of
the two diodes are connected to the ends A and B of a transformer. The n- sides are joined and connected to
one end of the load 𝑅𝐿 . The other end of the load is connected to the center tap C. The secondary of a
transformer is provided with centre taping and so it is called centre-tap transformer. The ac voltage to be
rectified is applied to the primary of the transformer. The output dc voltage is taken across the load 𝑅𝐿 .
Working:
During the positive half cycle of input ac voltage, the end A becomes positive and end B, negative
with respect to the center tap C. As a result the diode 𝐷1 becomes forward biased and 𝐷2 becomes reverse
biased. As a result𝐷1 conducts the current and 𝐷2 does not conduct. The current flows through the load in the
direction 𝐴𝐷1 𝑅𝐿 𝐶𝐴.
During the negative half cycle of input ac voltage, the end A becomes negative and end B, positive
with respect to the center tap C. As a result the diode 𝐷1 becomes reverse biased and 𝐷2 becomes forward
biased. Hence𝐷2 conducts the current and 𝐷1 does not conduct. The current flows through the load in the
direction 𝐵𝐷2 𝑅𝐿 𝐶𝐵.
The current flows through the load 𝑅𝐿 in the same direction during both half cycles. Hence dc output
is obtained. The input and output signals are shown in fig (2)
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CHAPTER: 5: MAGNETISM AND MATTER

:Two mark questions:
1. Give the expression for time period of oscillation when magnetic needle placed in an uniform magnetic
field & explain the terms.
𝑰
𝑻 = 𝟐𝝅√𝒎 𝑩
where I: Moment of inertia of needle
m : Magnetic dipole moment
B : Magnetic field

2. Define magnetization of magnetic material and write its SI unit. (A-2017E)

The magnetisation of a sample is defined as the net magnetic moment per unit volume.
SI unit is 𝑨𝒎−𝟏 .
3. Draw the variation of magnetic field (B) with magnetic intensity (H) when a ferromagnetic material is
subjected to a cycle of magnetisation. ( A-2016)
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4. Write the expression for magnetic potential energy of a magnetic dipole kept in a uniform magnetic field
and explain the terms. (A-2018)
𝑈𝑚 = −𝑚 𝐵 cos 𝜃
where m : Magnetic dipole moment
B : Magnetic field
𝜃 ∶ Angle between magnetic dipole moment and magnetic field
5. What is magnetic susceptibility? For which material is it low and positive? (A-2014)
Magnetic susceptibility of a material is defined as ratio of magnetisation ‘M’ to magnetic intensity ‘H’.
𝑴
𝝌= 𝑯
Paramagnetic material
6. Distinguish between diamagnetism and paramagnetism on the basis of relative permeability and
susceptibility. ( S-2015)
Diamagnetism Paramgnetism
1. The susceptibility is low and negative. 1. The susceptibility is low and positive.

2. Their permeability is slightly less than unity 2. The permeability is greater than unity

7. Define “retentivity” and “coercivity” (A-2020)

The property of magnetic material to retain magnetism even in the absence of magnetizing field is called
retentiviy.
The phenomenon of completely demagnetizing the magnetic material by applying the magnetizing field
in the opposite direction is called coercivity
8. What is hysteresis? Mention the significance of hysteresis curve. (S-2020)
The lagging of magnetic induction B behind magnetic intensity H, when a ferromagnetic sample is taken
through a cycle of magnetisation is called hysteresis.
Significance: The hysteresis loss per unit volume of the sample per cycle of magnetisation is given by the
area of the hysteresis loop.

9. State and explain Curie’s law in magnetism. (S-2018)

Statement: The susceptibility of a ferromagnetic substance is inversely proportional to its absolute
temperature.
1 𝑪
i.e., 𝜒∝𝑇 or 𝝌=𝑻
where ‘C’ is a constant called curie constant. This is known as Curie’s law.
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:Three mark questions:

1. What are i) magnetic declination ii) magnetic dip iii) horizontal component of earth’s field at a place? (A-
2014)
Magnetic declination at a place is defined as the angle between the geographic meridian and magnetic
meridian at that place.
The dip at a place is defined as the angle between the earth’s total magnetic field and a horizontal line drawn
in the magnetic meridian at that place.

The component of earth’s magnetic field along the horizontal direction in the magnetic meridian is called
horizontal component of earth’s magnetic field.
2. State & explain Gauss law in magnetism. (S-2016, S-2019)
Statement: The net magnetic flux through any closed surface is always zero. i.e., 𝑩 = 𝟎

Explanation:

The magnetic flux through small area element (∆𝑆⃗) is given by,

∆𝐵 = 𝐵
⃗⃗ ∙ ∆𝑆⃗

The total magnetic flux through the closed surface (S) is given by,
i.e., 𝐵 = ∑𝑎𝑙𝑙 ∆𝐵

or 𝐵 = ∑𝑎𝑙𝑙 [𝐵
⃗⃗ ∙ ∆𝑆⃗]

According to Gauss law in magnetism, we have

𝐵 = ∑[𝐵
⃗⃗ ∙ ∆𝑆⃗] = 0
𝑎𝑙𝑙

:Five mark questions:

1. What are magnetic field lines? Mention the properties of magnetic field lines.
Definition: A magnetic field line is an imaginary curve along which a free unit pole tends to move.
Properties of magnetic field lines:
1. Magnetic field lines are closed curves which always start in air from the N-pole and end on S-pole and
then return to the N-pole through the interior of the magnet.
2. The tangent to the magnetic field line at any point gives the direction of magnetic field at that point.
3. Two magnetic field lines never intersect.
4. Magnetic field lines are crowded in the region of strong magnetic field and spread out in the region of
weak field.
5. The magnetic field lines of a magnet form continuous closed loops.
2. Show that a current carrying solenoid is equivalent to a bar magnet. (S-2017, A-2018E)
2𝑙: Length of solenoid
𝑎: Radius of solenoid
𝐼: Current through solenoid
𝑃: Point on the axis of solenoid at distance ‘r’ from
centre of solenoid ‘O’
𝑛: Number of turns per unit length of solenoid
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𝑑𝑥: Thickness of circular current element at distance

‘x’ from centre of solenoid ‘O’
𝑛𝑑𝑥: Number of turns on current element of solenoid
The magnetic field at P due to this circular element is given by,
𝜇 2𝜋(𝑛𝑑𝑥)𝐼𝑎 2
𝑑𝐵 = 4𝜋0 [𝑎2+(𝑟−𝑥)2]3/2 ……………(1)
Let P be at a large distance from O. i.e., 𝑟 ≫ 𝑎 and 𝑟 ≫ 𝑥, then
[𝑎2 + (𝑟 − 𝑥 )2 ]3/2 ≅ 𝑟 3
𝜇 2𝜋𝑛𝐼𝑎 2
∴ 𝑑𝐵 = 4𝜋0 𝑑𝑥 ……………..(2)
𝑟3
The magnetic field at P due to whole solenoid can be obtained by integrating eqn (2) between the limits
𝑥 = −𝑙 to 𝑥 = +𝑙.
𝑥=+𝑙 𝜇0 2𝜋𝑛𝐼𝑎 2
∴ 𝐵 = ∫𝑥=−𝑙 𝑑𝑥
4𝜋 𝑟 3
𝜇0 2𝜋𝑛𝐼𝑎 2 +𝑙
= ∫−𝑙 𝑑𝑥
4𝜋 𝑟 3
𝜇0 2𝜋𝑛𝐼𝑎 2
= [𝑥]+𝑙
−𝑙
4𝜋 𝑟 3
𝜇 2𝜋𝑛𝐼𝑎 2
= 4𝜋0 [𝑙 − (−𝑙)]
𝑟3
𝜇0 2𝜋𝑛𝐼𝑎 2
= 4𝜋 [2𝑙]
𝑟3
𝜇 2
= 4𝜋0 𝑟 3 [2𝜋𝑛𝐼𝑎2 𝑙 ]…………..(3)
But (𝑛2𝑙 )(𝐼 )(𝜋𝑎2 ) = 2𝜋𝑛𝐼𝑎2 𝑙 = 𝑚 – magnetic dipole moment.
𝜇 2𝑚
∴ 𝐵 = 4𝜋0 ……………(4)
𝑟3
3. Obtain an expression for period of a magnetic dipole kept in a uniform magnetic field and hence obtain
an expression for magnetic field. (S-2020)
Consider a small magnetic compass needle of magnetic dipole moment 𝑚 ⃗⃗⃗ and moment of inertia ‘I’
placed in a uniform magnetic field 𝐵⃗⃗ 𝑠𝑢𝑐ℎ 𝑡ℎ𝑎𝑡 𝑚 ⃗⃗ . This needle will be under
⃗⃗⃗ 𝑚𝑎𝑘𝑒𝑠 𝑎𝑛 𝑎𝑛𝑔𝑙𝑒, 𝜃 𝑤𝑖𝑡ℎ 𝐵
torque which makes it to oscillate.
The torque acting on the needle is given by,
𝜏 = 𝑚 𝐵 sin 𝜃 → (1)
This torque is known as restoring torque.
𝑑2 𝜃 𝑑2 𝜃
But 𝜏 = 𝐼 𝛼 = 𝐼 ( 𝑤ℎ𝑒𝑟𝑒 = 𝑎𝑛𝑔𝑢𝑙𝑎𝑟 𝑎𝑐𝑐𝑒𝑙𝑒𝑟𝑎𝑡𝑖𝑜𝑛)
𝑑𝑡 2 𝑑𝑡 2

𝑑2 𝜃
Equation (1) becomes, ∴ 𝑚 𝐵 sin 𝜃 = − 𝐼 → (𝟐)
𝑑𝑡 2

Negative sign indicates that restoring torque acts opposite to the direction of the displacement (𝜃) of the
needle.
Since 𝜃 is small, so sin 𝜃 ≈ 𝜃
𝑑2𝜃
𝐼 = −𝑚 𝐵 𝜃
𝑑𝑡 2
𝑑2𝜃 𝑚𝐵
2
=− 𝜃
𝑑𝑡 𝐼
This represents SHM. ( 𝛼 = −𝜔2 θ ).
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The square of the angular frequency is

𝑚𝐵
𝜔2 =
𝐼
2𝜋 2 𝑚 𝐵
[ ] =
𝑇 𝐼

2𝜋 𝑚𝐵
= √
𝑇 𝐼

𝑰
𝑻 = 𝟐𝝅√𝒎 𝑩 𝑇ℎ𝑖𝑠 𝑖𝑠 𝑡ℎ𝑒 𝑒𝑥𝑝𝑟𝑒𝑠𝑠𝑖𝑜𝑛 𝑓𝑜𝑟 𝑝𝑒𝑟𝑖𝑜𝑑 𝑜𝑓 𝑜𝑠𝑐𝑖𝑙𝑙𝑎𝑡𝑖𝑜𝑛 𝑜𝑓 𝑡ℎ𝑒 𝑛𝑒𝑒𝑑𝑙𝑒.

𝟒 𝝅𝟐 𝚰
The magnitude of the magnetic field is, 𝑩= 𝒎 𝑻𝟐

4. Properties / Differences between Diamagnetic, Paramagnetic and Ferromagnetic materials

Diamagnetic materials Paramagnetic materials Ferromagnetic materials
1. The susceptibility is low and 1. The susceptibility is low and 1. The susceptibility is large and
negative. positive. positive.
2. The permeability is slightly 2. The permeability is greater 2. The permeability is very large.
less than unity than unity
3.They do not obey Curie’s law. 3.They obey Curie’s law. 3.They obey Curie’s law.
4.The magnetic field lines are 4.The magnetic field lines are 4.The magnetic field lines are
expelled from material. concentrated inside material. highly concentrated inside
material.
5.They are repelled by a magnet. 5.They are weakly attracted by a 5.They are strongly attracted by a
magnet. magnet.

Weightage of marks:
Ch-3: Current electricity: -----------------12 marks (Excluding problem)
Ch-5: Magnetism and matter: ------------ 09 marks
Ch-14: Semiconductor electronics:------12 marks
Total marks : ------------------------- --- = 33 marks

Prepared by : M L PATIL, Lecturer

Govt P U College for girls Jamkhandi Dist: Bagalkote
Mobile No. : 9448986427
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