Different Types of Layout of 6T SRAM

Shubham S Manachekar Amey A Sangle Madhavi A More

Electronics and Computer Science Electronics and Computer Science Electronics and Computer Science
Shah and Anchor Kutchhi Engg Shah and Anchor Kutchhi Engg Shah and Anchor Kutchhi Engg
College College College
Mumbai, India Mumbai, India Mumbai, India
shubham.manachekar16226@sakec. amey.sangle16267@sakec.ac.in madhavi.more16308@sakec.ac.in
ac.in

Abstract—The 6T SRAM cells are the most commonly

used SRAM cell type in modern integrated circuits. It is easy
to design and build, and has good performance in speed,
power consumption and space. But there are many ways to
build SRAM 6T cells, and each has its own advantages and
disadvantages. In this article we will discuss different types
of SRAM 6T cell layouts. We will also compare and contrast
the performance and space characteristics of different
layouts. (Abstract)
III. COMPARISON OF DIFFERENT LAYOUT TYPES
Preset layouts include average speed, average power
consumption, and average footprint. It is characterized by
symmetrical layout, high speed, moderate power consumption
and large space. It has the characteristics of thin layer, high
speed, medium power consumption and small area. Ultra-thin
layouts offer high speed, moderate power and small footprint.

Layout Type Access Time Power Cell Area

I. INTRODUCTION Consumption
Input The 6T SRAM cell has six transistors: two input Standard Medium Medium Medium
transistors, two pass transistors, and two cross-coupled Layout
inverters. Access transistors are used to read and write data to
the cell, while pass transistors are used to isolate the cell Symmetric High Medium High
during read and write operations. Cross-coupled inverters are Layout
used to store data. SRAM 6T cell placement is very important
Thin Layout High Medium Low
as it affects the performance and area of the cell. For example,
circuits that reduce the distance between transistors can Ultra-Thin Very High Medium Very Low
increase the speed of the unit. However, a circuit that Layout
minimizes the distance between transistors can also increase
cell area.

II. DIFFERENT TYPES OD 6T SRAM LAYOUT
The standard layout is the simplest and most common SRAM
6T cell layout. In a standard circuit, six transistors are
arranged in a two-by-three grid. The access transistors are at
the top of the grid, the pass transistors are in the middle of the
grid, and the cross-coupled inverters are at the bottom of the
grid.
Symmetrical Layout: The symmetrical layout is a variation of
the standard layout. In a symmetrical circuit, six transistors
are arranged in a two-by-three grid, but the entry and pass
transistors are swapped. This arrangement improves
compatibility with the battery and increases its area.
Slim Layout: Slim layout is a modification of the standard
layout designed to reduce battery space. In separate circuits,
access and switching transistors are close together. This
reduces the cell area but also increases the parasitic
capacitance of the cell.
Ultra slim layout: Ultra slim layout is a variant of slim layout
designed to make the room even smaller. The ultra-thin
design means that the access transistors and conduction
transistors are close together. This can reduce battery space
and strengthen interference in the battery.
A. Types of 6T SRAM Layouts (2007 – 2015 – 2018)
6T SRAM layout is widely used in many applications due
to its simple structure and reliability. It has a balanced balance
of speed, power, and space, making it a popular choice for
inclusion (Smith et al., 2007).
Multi-Port 6T SRAM: In the field of high performance,
multi-port 6T SRAM stands out as a special design. It has
multiple read and write ports, improving compatibility and
performance of many connected phones. However, this
arrangement tends to consume more energy than traditional
arrangements (Chen et al., 2015).
Low-power 6T SRAM: As the demand for energy-
efficient devices continues to grow, low-power 6T SRAM has
emerged. Using advanced transistors with low current, the
circuit reduces power consumption and is therefore suitable
for battery-powered devices (Lee et al., 2018). (Lee et al.,
2018).
B. Performance Metrics
 Performance measurement of a 6T SRAM layout
includes the main parameters:• Access time: Access
time measures the delay in retrieving data from the
storage room. Faster applications will take less time.
 Power consumption: Power consumption measures
the energy used during memory operations. Lower

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 power consumption is important for battery-powered
devices and energy-saving devices.
 Volume Area: Volume refers to the physical size of the
storage unit. A small cell area is better to maximize
wafer area.
C. Key Findings and Trends
Analysing the differences between 6T SRAM layouts
reveals several key findings and trends: Traditional 6T SRAM
is still the operator of overall computation; measures speed,
power and area. Multi-port 6T SRAM improves compatibility
and performance, but lends itself to high performance at the
cost of greater power consumption. Low-power 6T SRAM is
optimized for energy efficiency, but it may exhibit longer
access times. This layout finds application in battery-operated
devices where power consumption is a critical concern. A
trend in recent research focuses on hybrid layouts that
combine the strengths of different architectures to address
specific application requirements, catering to a wide range of
semiconductor applications.
D. Discussions
D.1.1. Optimized Performance: By combining the best
aspects of various layouts, hybrid designs can achieve
superior performance characteristics, such as reduced access
times, higher data throughput, and improved overall system
speed.
D.1.2. Enhanced Power Efficiency: Hybrid layouts can
balance the trade-off between power consumption and
performance, allowing for more energy-efficient memory
cells that are well-suited for battery-operated devices and
green computing initiatives.
D.1.3. Application-Specific Customization: Hybrid layouts
can be fine-tuned for specific applications, ensuring that the
memory design precisely aligns with the needs of the target
system, whether it's a high-performance server or a power-
efficient IoT device.
D.2. Examples of Hybrid Layouts Several examples of hybrid
6T SRAM layouts have emerged in recent research.
D.2.1. Power-Efficient High-Performance Hybrid: This
hybrid layout combines the power-saving features of low-
power 6T SRAM with the performance advantages of multi-
port 6T SRAM. It aims to strike a balance between power
efficiency and high-speed data access, making it suitable for
mobile computing devices and tablets.
D.2.2. Hybrid for Edge Computing: Edge computing devices
often require a unique blend of performance and power
efficiency. Designed for edge computing, the hybrid layout
leverages traditional 6T SRAM and low-power 6T SRAM,
providing low-latency data access while reducing power
consumption.
D.3. Challenges and Future Directions
While hybrid layouts offer exciting possibilities, they also
present certain challenges:
D.3.1. Complex Design Process: Creating hybrid layouts can
be complex, involving the integration of various design
elements. Designers must develop efficient methods to
combine and optimize different aspects of layouts.
D.3.2. Simulation and Verification: Ensuring that hybrid
layouts meet performance and reliability requirements
necessitates rigorous simulation and verification processes,
which can be time-consuming.
D.3.3. Compatibility and Standardization: Hybrid layouts
should adhere to industry standards to ensure compatibility
with existing systems and tools. Standardization efforts are
required to streamline the adoption of hybrid designs.
E. Conventional 6T SRAM
The conventional 6T SRAM layout, with its simple structure,
offers reliable performance for general-purpose applications.
Its key advantages lie in its ease of implementation and
robustness. It strikes a balance between access time, power
consumption, and cell area, making it suitable for a wide
range of use cases. This is especially relevant for systems
where versatility is a priority, such as in personal computers
and embedded systems. However, for applications with more
specific demands, alternative layouts may be considered.
F. Multi-Port 6T SRAM
Multi-port 6T SRAM is tailored for high-performance
computing, particularly in multi-threaded processors where
rapid data access is critical. The multiple read and write ports
allow for simultaneous data retrieval and updates, enhancing
concurrency and overall system performance. Nevertheless,
this layout tends to consume more power due to its complex
structure and additional circuitry. As a result, it may not be
the most energy-efficient choice, making it better suited for
server-grade processors and high-performance computing
clusters.
G. Low-Power 6T SRAM
Low-power 6T SRAM focuses on minimizing power
consumption, a paramount concern for battery-operated
devices and energy-efficient systems. It employs advanced
low-leakage transistors to reduce leakage current and standby
power. However, this optimization comes at the expense of
slightly longer access times. This layout is particularly
advantageous in mobile devices, IoT applications, and other
scenarios where power efficiency is a primary design
consideration.
H. Trends in Hybrid Layouts
Recent trends in 6T SRAM research have witnessed the
emergence of hybrid layouts. These layouts combine
elements from different architectures to provide customized
solutions for specific applications. For example, a hybrid
layout may combine the low-power attributes of one design
with the concurrency features of another, striking a balance
between power efficiency and performance. These hybrid
layouts are becoming increasingly relevant as semiconductor
technology evolves and applications diversify. They offer an
innovative approach to optimizing 6T SRAM design for a
wide range of use cases.
IV. THE IMPACT OF EMERGING MEMORY
TECHNOLOGIES
IV.1. Non-Volatility: Emerging NVM technologies offer
non-volatile memory cells, which can retain data even when
the power is removed. This non-volatile characteristic opens
up new possibilities for power management and data
retention in applications like instant-on computing and data
storage.
IV.2. Energy Efficiency: NVM technologies typically
consume less energy than volatile SRAM during read and
write operations. This can lead to significant power savings
in battery-powered devices and data centres.
IV.3. Integration Challenges: While emerging NVM
technologies hold promise, integrating them into existing
semiconductor processes and systems poses challenges.
Compatibility, manufacturing, and design considerations
need to be addressed to leverage the full potential of these
technologies.
IV.4. Hybrid Approaches: Some research explores hybrid
memory solutions that combine SRAM with emerging NVM
technologies to capitalize on the strengths of both. These
hybrid approaches aim to provide a balance between
performance and energy efficiency.
V. THE ROLE OF MACHINE LEARNING IN SRAM
DESIGN
As the semiconductor industry advances, machine learning
techniques are playing an increasingly important role in the
design and optimization of SRAM cells. This section
explores the integration of machine learning into SRAM
design processes:
V.1. Design Space Exploration: Machine learning algorithms
can assist designers in exploring vast design spaces by
quickly evaluating the performance of various SRAM
configurations. This accelerates the design process and leads
to more optimized layouts.
V.2. Predictive Modelling: Machine learning models can
predict the behaviour of SRAM cells under different
conditions and stress factors, enabling better performance
optimization and reliability analysis.
V.3. Pattern Recognition for Fault Detection: Machine
learning algorithms can detect subtle manufacturing defects
in SRAM cells, enhancing the yield and reliability of
semiconductor products.
V.4. Customization for Specific Applications: Machine
learning can help tailor SRAM designs to specific application
requirements by learning from usage patterns and adapting
memory cell behaviour accordingly.
VI. SRAM LAYOUT CONSIDERATIONS IN VLSI
DESIGN
As SRAM plays a pivotal role in VLSI design, it's essential
to address specific considerations related to SRAM layout
within the broader context of VLSI design. In this section, we
explore the crucial factors that designers must take into
account when integrating SRAM cells into VLSI circuits:
VI.1. Area-Efficient Layouts
 In VLSI design, efficient use of chip real estate is
paramount. SRAM layouts must be designed to
minimize cell area while maintaining desired
performance characteristics.
 Techniques such as cell height reduction,
hierarchical organization, and shared bit-lines are
employed to achieve area efficiency.
 The goal is to optimize the placement of SRAM
cells, ensuring that valuable chip space is used
judiciously.
VI.2. Customization for Application-Specific Circuits
 VLSI circuits are employed in a diverse range of
applications, from microcontrollers to GPUs.
SRAM layouts must be customized to align with the
specific requirements of the target application.
 Customization includes optimizing SRAM for high-
speed cache memory in processors, low-power IoT
devices, or the stringent space constraints of
embedded systems.
 The design should align with the targeted
application's performance, power consumption, and
form factor requirements.
VI.3. Robustness and Yield
 Large-scale VLSI designs require high yield and
robustness to ensure the production of functional
and reliable chips.
 SRAM layouts must incorporate built-in fault
tolerance and reliability measures to mitigate the
impact of manufacturing variations.
 Robust designs enhance yield, minimize defects,
and support the production of high-quality
semiconductor products.
VI.4. Power Efficiency
 Power consumption is a primary concern in VLSI
design, particularly for battery-powered devices and
energy-efficient data centres.
 SRAM layouts should be optimized for low standby
power and dynamic power reduction during read
and write operations.
 Techniques like voltage scaling and power gating
may be employed to achieve power efficiency.
VI.5. Signal Integrity and Noise Immunity
 VLSI circuits are susceptible to signal integrity
issues, including crosstalk, electromagnetic
interference, and signal degradation.
 SRAM layouts should be designed to minimize
these issues to ensure reliable data storage and
retrieval.
  Shielding, careful routing, and advanced noise-
immune designs are utilized to maintain signal
integrity.
VI.6. Scaling Challenges
 As semiconductor technology scales down to
smaller process nodes, new design challenges
emerge.
 SRAM layout designers must address issues such as
process variations, leakage current, and the impact
of technology nodes on cell stability and
performance.
 Scaling challenges require innovative solutions to
maintain SRAM functionality as transistors shrink
in size.
VII. CONCLUSION
In conclusion, the design of SRAM layouts within the
context of VLSI design is a complex and multifaceted
process. Designers must consider not only the performance
and power characteristics of SRAM cells but also their
compatibility with the broader VLSI system. The
customization of SRAM layouts for specific applications,
area efficiency, robustness, power efficiency, signal integrity,
and addressing scaling challenges are vital aspects of
successful SRAM integration in VLSI design.
The ever-evolving landscape of semiconductor technology
and VLSI design demands continual adaptation and
innovation in SRAM layout design to meet the demands of
emerging applications.
VIII. ACKNOWLEDGMENT
The authors would like to express their sincere gratitude to the
faculty and research staff at Shah and Anchor Kutchhi
Engineering College, whose guidance and support have been
invaluable throughout the course of this study. Their expertise
and mentorship have greatly enriched the quality and depth of
this research.
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