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Abstract
Lead-free (1 x)BaTiO3 xBi(Mg2/3Ta1/3)O3 [(1 x)BT xBMT, 0 r x r0.1] perovskite solid solutions were synthesized via the conven-
tional solid state reaction technique. Raman spectra and XRD analysis demonstrate that a systematically structural evolution from a tetragonal to
pseudo-cubic phase occurred near 0.01 ox o 0.03. A phenomenon from a normal ferroelectric behavior to diffusive and dispersive relaxor-like
characteristic was also observed. As BMT content further increases (0.06r x r 0.1), the temperature stability of permittivity was markedly
improved (Δε/ε30 1Cr 715%), high relative permittivity ( 1000–2000) and low loss ( r 2%) were obtained over a wide temperature range
from 30 1C to 150 1C at 1 kHz. Moreover, when x ¼ 0.08 and 0.1, Δε/ε30 1C was r 7 10%. These results indicate that (1 x)BT xBMT
ceramics could be suitable for thermally stable dielectric applications.
& 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
http://dx.doi.org/10.1016/j.ceramint.2015.02.036
0272-8842/& 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Please cite this article as: D. Ma, et al., Temperature stability, structural evolution and dielectric properties of BaTiO3–Bi(Mg2/3Ta1/3)O3 perovskite ceramics,
Ceramics International (2015), http://dx.doi.org/10.1016/j.ceramint.2015.02.036
2 D. Ma et al. / Ceramics International ] (]]]]) ]]]–]]]
2. Experimental
Please cite this article as: D. Ma, et al., Temperature stability, structural evolution and dielectric properties of BaTiO3–Bi(Mg2/3Ta1/3)O3 perovskite ceramics,
Ceramics International (2015), http://dx.doi.org/10.1016/j.ceramint.2015.02.036
D. Ma et al. / Ceramics International ] (]]]]) ]]]–]]] 3
Room temperature Raman spectra of (1 x)BT–xBMT octahedra vibrations, which emerges just in the presence of a
(0r x r 0.1) ceramics are shown in Fig. 2. The vibrational ferroelectric phase [29,30]. The bands in the high-wavenumber
modes are indexed in the diagram. Based on the Pokorny work region (4 500 cm 1) are attributed to the vibrations of oxygen
[27], the modes for x ¼ 0 were assigned as a single crystal octahedra. With the increase of B-site substituent content (x),
BaTiO3. In the regions from low to mid-wavenumber, the there are significant changes of the spectral signature, i.e. the
Raman spectrum of pure tetragonal BaTiO3 was characterized one at 180 cm 1 vanishes, and a new mode 1 can be viewed
by a sharp band at 170 cm 1, a “silent” mode at 305 in its place. Mode 1 is assigned with A–O vibrations and its
cm 1, asymmetric broader bands at 270 cm 1, 515 cm 1 emergence indicates that there have Bi3 þ or Ba2 þ cations-
and the high-frequency LO modes at around 715 cm 1 [28]. enriched nano-sized zones (clusters) [31]. The above men-
A1(TO) mode at 270 cm 1 is associated with the polar BO6 tioned changes are particularly conspicuous for xZ 0.03. The
resonance dip at 180 cm 1 emerges just for x ¼ 0 and
x¼ 0.01, but vanishes for x Z 0.03, demonstrating that the
long-range ferroelectric order is destroyed.
Fig. 3 illustrates the surface microstructures of (1-x)BT-
xBMT ceramics sintered at their optimized temperatures. It is
obviously observed that all samples contain few pores. The
grain size was affected extraordinarily by the content of BMT
addition. The grain size of samples becomes smaller and
uniform as x increases from 0.01 to 0.03, which indicates that
the addition of BMT results in the inhibition of the grain
growth. With further increasing the BMT content (x¼ 0.1), the
grain size of samples varies rarely, as shown in Fig. 3(d).
The relative permittivity and dielectric loss of (1 x)BT–
xBMT ceramics as a function of temperature at various frequen-
cies (1 kHz–1 MHz) are plotted in Fig. 4. Pure BT ceramic
exhibits a reasonably sharp Curie peak with tetragonal-cubic
phase transition and is typical of a normal ferroelectric with Curie
point, Tc 130 1C, which is consistent with the previous report
Fig. 2. Room temperature Raman spectra of (1x)BT–xBMT (0.00rx [6]. In this study, Bi3 þ has a slightly smaller radius than that of
r0.10) ceramics. Ba2 þ on the A-site, Mg2 þ (0.72 Å) and Ta5 þ (0.64 Å) have
Fig. 3. The SEM images of (1 x)BT–xBMT ceramics sintered at their optimized temperatures: (a) x¼ 0.01, 1370 1C, (b) x ¼0.03, 1370 1C, (c) x ¼0.08, 1330 1C,
and (d) x¼0.10, 1330 1C.
Please cite this article as: D. Ma, et al., Temperature stability, structural evolution and dielectric properties of BaTiO3–Bi(Mg2/3Ta1/3)O3 perovskite ceramics,
Ceramics International (2015), http://dx.doi.org/10.1016/j.ceramint.2015.02.036
4 D. Ma et al. / Ceramics International ] (]]]]) ]]]–]]]
Fig. 4. Relative permittivity and dielectric loss of (1 x)BT–xBMT (0.00rxr 0.10) as a function of temperature measured at frequencies from 1 kHz to 1 MHz.
Inserts illustrates the ln(1/ε 1/εm) as a function of ln(T Tm) at 10 kHz for (1 x)BT–xBMT ceramics with x ¼0.01 and 0.03. [The symbols: experimental data; the
solid line: fitting to Eq. (1).]
Table 1
Comparison of dielectric properties of 0.94BT–0.06BMT, 0.92BT–0.08BMT
and 0.9BT–0.1BMT at 1 kHz with other works.
Fig. 5. (a) Δε/ε30 1C, (b) relative permittivity (εr) and dielectric loss (Tan δ) as
a function of temperature from 30 to 200 1C at 1 kHz for (1 x)BT–xBMT Fig. 5 demonstrates the temperature stability of permittivity (Δε/
ceramics (x ¼0.06, 0.08 and 0.10), where Δε¼ ε(30 1C–200 1C)–ε30 1C. ε30 1C), relative permittivity (εr) and dielectric loss (tan δ) as a
function of temperature from 30 1C to 200 1C at 1 kHz for (1 x)
larger radii than that of Ti4 þ (0.604 Å) on the B-site. Hence, the
BT–xBMT ceramics (x¼ 0.06, 0.08 and 0.1). It is obviously seen
cations disorder on the A-site and B-site may arouse relaxor-like
that the addition of BMT has a great effect on the dielectric
behavior in the BT-BMT ceramics.
properties of ceramics. With the increase of x, the temperature
The relaxor properties of BT–BMT ceramics can be
stability of permittivity (Δε/ε30 1C) was improved, but the relative
described effectively via a modified Curie–Weiss law [32,33]:
permittivity (εr) was depressed. All compositions possess the
1 1 ðT T m Þγ optimum dielectric performance with small Δε/ε30 1C values (r 7
¼ ð1Þ 15%), high relative permittivity ( 1000–2000) and low dielectric
ε εm C
loss (tan δr0.02) over a broad temperature range from 30 to
where εm is the maximum value of the relative permittivity, and C 150 1C. Especially for the samples of x¼ 0.08 and x¼ 0.1, the
is the Curie constant. γ is a diffusion coefficient, whose value can values of Δε/ε30 1C are within 710%. Table 1 lists the maximum
range from 1 (a normal ferroelectric) to 2 (an ideal relaxor). The relative permittivity, dielectric loss, and the temperature stability of
values of γ for 0.99BT-0.01BMT and 0.97BT–0.03BMTceramics permittivity in the operational temperature range with several
at 10 kHz were gained from the slopes of ln(1/ε–1/εm) versus ln dielectric materials. It can be seen that (1 x)BT–xBMT (0.01r
(T–Tm) plots in Fig. 4(a) (see the insets). The γ value varies from xr0.1) ceramics show small Δε/ε30 1C values and high relative
1.21 to 1.40, indicating a relaxor-like behavior. permittivity ( 1000–2000), especially a significantly lower
Please cite this article as: D. Ma, et al., Temperature stability, structural evolution and dielectric properties of BaTiO3–Bi(Mg2/3Ta1/3)O3 perovskite ceramics,
Ceramics International (2015), http://dx.doi.org/10.1016/j.ceramint.2015.02.036
D. Ma et al. / Ceramics International ] (]]]]) ]]]–]]] 5
dielectric loss (r0.02) over a wide temperature range from 30 to sintered at medium temperature, J. Mater. Sci. Mater. Electron. 25 (2014)
190 1C, which could be a candidate for devices with the advantages 4252–4258.
[11] Y. Sun, H. Liu, H. Hao, S. Zhang, L. Guo, Z. Yu, Effect of
of lower insertion loss.
Na0.5Bi0.5TiO3 on dielectric properties of BaTiO3 based ceramics, Ceram.
Int. 38 (2012) S41–S44.
4. Conclusions [12] L.X. Lin, M.J. Wang, Y.R. Liu, J.X. Chen, N. Zhang, Decisive role of
MgO addition in the ultra-broad temperature stability of multicomponent
Lead-free (1 x)BT–xBMT (0.01rxr0.1) ceramics have BaTiO3-based ceramics, Ceram. Int. 40 (2014) 1105–1110.
been prepared by the solid state processing technique. A system- [13] J. Wang, S.L. Jiang, D. Jiang, J.J. Tian, Y.L. Li, Y. Wang, Micro-
structural design of BaTiO3-based ceramics for temperature-stable multi-
atically structural transition from tetragonal to pseudo-cubic phase layer ceramic capacitors, Ceram. Int. 38 (2012) 5853–5857.
was observed near 0.01oxo0.03. With the further increase of [14] L.X. Li, J.X. Chen, D. Guo, An ultra-broad working temperature dielectric
BMT content (0.06rxr0.1), good temperature stability of material obtained with Praseodymium doped BaTiO3–(Bi0.5Na0.5)TiO3–Nb2O5
permittivity (Δε/ε301C r 715%), high relative permittivity based ceramics, Ceram. Int. 40 (2014) 12539–12543.
( 1000–2000) and low dielectric loss (r2%) were acquired [15] X.L. Chen, Y.L. Wang, F. He, H.F. Zhou, L. Fang, L.J. Liu, Effects of Bi
(Zn0.5 Zr0.5)O3 addition on the structure and electric properties of BaTiO3
over a broad temperature range of 30 1C–150 1C at 1 kHz. These lead-free piezoelectric ceramics, Ceram. Int. 39 (2013) 3747–3751.
results indicate that (1 x)BT–xBMT (x¼ 0.06–0.1) ceramics [16] C. Ma, X. Tan, Morphotropic phase boundary and electrical properties of
could have a potential application for X8R-type [X and 8 are lead-free (1 x)BaTiO3–xBi(Li1/3Ti2/3)O3 ceramics, J. Appl. Phys. 107
the minimum and maximum working temperatures ( 55 to (2010) 124108.
150 1C), respectively. R is maximum temperature coefficient of [17] H. Ogihara, C.A. Randall, S. Trolier-McKinstry, High-energy density
capacitors utilizing 0.7BaTiO3–0.3BiScO3 ceramics, J. Am. Ceram. Soc.
capacitance] capacitors. 92 (2009) 1719–1724.
[18] H. Ogihara, C.A. Randall, S. Trolier-McKinstry, Weakly coupled relaxor
Acknowledgments behavior of BaTiO3–BiScO3 ceramics, J. Am. Ceram. Soc. 92 (2009)
110–118.
This work was supported by National Natural Science [19] B. Xiong, H. Hao, S.J. Zhang, H.X. Liu, M.H. Cao, Structure, Dielectric
properties and temperature stability of BaTiO3–Bi(Mg1/2Ti1/2)O3 perovs-
Foundation of China (Nos. 11364012 and 11464009), Natural kite solid solutions, J. Am. Ceram. Soc. 94 (2011) 3412–3417.
Science Foundation of Guangxi (No. 2013GXNSFAA019291, [20] Q. Zhang, Z.R. Li, F. Li, Z. Xu, Structural and dielectric properties of Bi
2014GXNSFAA118326, and 2014GXNSFAA118312), Project (Mg1/2 Ti1/2)O3–BaTiO3 lead-free ceramics, J. Am. Ceram. Soc. 94
of Guangxi Scientific Research and Technical Development (2011) 4335–4339.
[21] T. Wang, L. Jin, C.C. Li, Q.Y. Hu, X.Y. Wei, Relaxor ferroelectric
(No. 1348020-11), and Project of Outstanding Young Teachers'
BaTiO3–Bi(Mg2/3Nb1/3)O3 ceramics for energy storage application,
Training in Higher Education Institutions of Guangxi. J. Am. Ceram. Soc. 98 (2015) 559–566.
[22] X.L. Chen, J. Chen, D.D. Ma, L. Fang, H.F. Zhou, Thermally Stable
References BaTiO3–Bi(Mg2/3Nb1/3)O3 solid solution with high relative permittivity
in a broad temperature usage range, J. Am. Ceram. Soc, 2014, http://dx.
[1] H. Kishi, Y. Mizuno, H. Chazono, Base-metal electrode-multilayer doi.org/10.1145/1125451.1125557.
ceramic capacitors: past, present and future perspectives, Jpn. J. Appl. [23] K. Suzuki, K. Kijima, Size driven phase transition of barium titanate
Phys. 42 (2003) 1–15. nanoparticles prepared by plasma chemical vapor deposition, J. Mater.
[2] F.D. Morrison, D.C. Sinclair, A.R. West, Doping mechanisms and Sci. 40 (2005) 1289–1292.
electrical properties of La-doped BaTiO3 ceramics, Int. J. Inorg. Mater. [24] T. Li, K. Yang, R. Xue, Y. Xue, Z. Chen, The effect of CuO doping on
3 (2001) 1205–1210. the microstructures and dielectric properties of BaTiO3 ceramics,
[3] Y. Yuan, M. Du, S. Zhang, Z. Pei, Effects of BiNbO4 on the J. Mater. Sci. Mater. Electron. 22 (2011) 838–842.
microstructure and dielectric properties of BaTiO3-based ceramics, [25] C.C. Huang, D.P. Cann, X.L. Tan, N. Vittayakorn, Phase transitions and
J. Mater. Sci. Mater. Electron. 20 (2009) 157–162. ferroelectric properties in BiScO3–Bi(Zn1/2Ti1/2)O3–BaTiO3 solid solu-
[4] J.Y. Chen, W. Jin, Y. Yao, Study of the anomalous grain growth of tions, J. Appl. Phys. 102 (2007) 044103.
BaTiO3 ceramics, Ferroelectrics 142 (1993) 153–159. [26] R.D. Shannon, Crystal physics, diffraction, theoretical and general
[5] J. Kim, T. Noh, S. Jeon, S. Park, H. Chun, H. Lee, Deterioration behavior crystallography, Acta. Cryst. Sec. A 32 (1976) 751–767.
analysis of dysprosium and thulium co-doped barium titanate ceramics [27] J. Pokorny, U.M. Pasha, L. Ben, O.P. Thakur, D.C. Sinclair,nI.,
for multilayer ceramic capacitors, Ceram. Int. 38 (2012) 6837–6842. M. Reaney, Use of Raman spectroscopy to determine the site occupancy
[6] A. Zeb, S.J. Milne, Temperature-stable dielectric properties from 20 1C of dopants in BaTiO3, J. Appl. Phys. 109 (2011) 114110.
to 430 1C in the system BaTiO3–Bi(Mg0.5Zr0.5)O3, J. Eur. Ceram. Soc. 34 [28] U.D. Venkateswaran, V.M. Naik, R. Naik, High-pressure Raman studies
(2014) 3159–3166. of polycrystalline BaTiO3, Phys. Rev. B 58 (1998) 14256–14260.
[7] X.L. Chen, J. Chen, D.D. Ma, L. Fang, H.F. Zhou, High relative [29] P.A. Fleury, P.D. Lazay, Acoustic–soft-optic mode interactions in ferro-
permittivity, low dielectric loss and good thermal stability of BaTiO3–Bi electric BaTiO3, Phys. Rev. Lett. 26 (1971) 1331.
(Mg0.5Zr0.5)O3 solid solution, Ceram. Int. 41 (2015) 2081–2088. [30] R. Farhi, M. El Marssi, A. Simon, A Raman and dielectric study of
[8] L. Li, R. Fu, Q. Liao, L. Ji, Doping behaviors of NiO and Nb2O5 in ferroelectric Ba(Ti1 xZrx)O3 ceramics, Eur. Phys. J. B 9 (1999) 599–604.
BaTiO3 and dielectric properties of BaTiO3-based X7R ceramics, Ceram. [31] J. Kreisel, P. Bouvier, M. Maglione, B. Dkhil, A. Simon, High-pressure
Int. 38 (2012) 1915–1920. Raman investigation of the Pb-free relaxor BaTi0.65Zr0.35O3, Phys. Rev.
[9] Z.Y. Hu, B. Cui, M. Li, L.L. Li, Novel X8R-type BaTiO3-based ceramics B 69 (2004) 092104.
with a high dielectric constant created by doping nanocomposites with [32] G.A. Smolenski, Physical phenomena in ferroelectrics with diffused
Li–Ti–Si–O, J. Mater. Sci. Mater. Electron. 24 (2013) 3850–3855. phase transition, J. Phys. Soc. Jpn. 28 (1970) 26–37.
[10] L.X. Li, Y.R. Liu, M.J. Wang, N. Zhang, J.X. Chen, Enhanced dielectric [33] K. Uchino, S. Nomura, Critical exponents of the dielectric constants in
and electrical properties in CaZrO3-doped X8R BaTiO3-based ceramics diffused-phase-transition crystals, Ferroelectr., Lett. Sect. 44 (1982) 55–61.
Please cite this article as: D. Ma, et al., Temperature stability, structural evolution and dielectric properties of BaTiO3–Bi(Mg2/3Ta1/3)O3 perovskite ceramics,
Ceramics International (2015), http://dx.doi.org/10.1016/j.ceramint.2015.02.036