Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 11
11.1 11.3
(a)  2 1016 
 V   fp  0.0259 ln    0.3653 V
10 
I D  10 15 exp GS   1.5 10 
 2.1Vt

 We find that
For VGS  0.5 V, 2 s


211.7  8.85  10 14 
15
I D  10 exp 
 0.5 

eN a 1.6  10 19 2  1016  
 2.10.0259   2.544 10 cm/V 1 / 2 5

I D  9.83 10 12 A

For VGS  0.7 V, L 
2 s
eN a
 fp  V DS   fp  V DS sat  
I D  3.88 10 10 A (a) V DS sat   VGS  VT  1.0  0.4  0.6 V
For VGS  0.9 V,

L  2.544 10 5 
 
8
I D  1.54 10 A
 0.3653  2  0.3653  0.6
Then the total current is:
 
I T  I D 10 6
L  1.413 10 5 cm  0.1413  m
(b) V DS sat   VGS  VT  1.0  0.4  0.6 V
For VGS  0.5 V, I T  9.83  A
For VGS  0.7 V, I T  0.388 mA 
L  2.544 10 5 
For VGS  0.9 V, I T  15.4 mA 
 0.3653  4  0.3653  0.6 
(b) L  2.816 10 cm  0.2816  m
5

Power: P  I T  V DD (c) V DS sat   VGS  VT  2.0  0.4  1.6 V

Then
For VGS  0.5 V, P  49.2  W

L  2.544 10 5 
For VGS  0.7 V, P  1.94 mW 
 0.3653  2  0.3653  1.6 
For VGS  0.9 V, P  77 mW L  3.46110 6 cm  0.0346  m
_______________________________________ (d) V DS sat   VGS  VT  2.0  0.4  1.6 V

L  2.544 10 5 
 0.3653  4  
11.2
V   0.3653  1.6
exp GS2 
 V  VGS1   L  1.749 10 cm  0.1749  m5
I D2  nVt 
  exp  GS2  _______________________________________
I D1 V   nVt 
exp GS1 
 t 
nV 11.4
I   2 1016 
VGS2  VGS1  nVt ln  D 2   fp  0.0259 ln    0.3653 V
10 
 I D1   1.5 10 
(a) VGS 2  VGS 1  0.0259  ln 10 We find that
 0.0596 V 2 s


211.7  8.85  10 14 
(b) VGS 2  VGS 1  1.50.0259  ln 10 eN a 1.6  10 19 2  1016  
 0.0895 V
 2.544 10 5 cm/V 1 / 2
(c) VGS 2  VGS 1  2.10.0259  ln 10
V DS sat   VGS  VT  2.0  0.4  1.6 V
 0.125 V
_______________________________________
L 
2 s
eN a
 fp  V DS   fp  V DS sat  
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________


(a) L  2.544 10 5  2 s 
211.7  8.85  10 14 

 0.3653  3  0.3653  1.6  eN a


1.6  10 19 4  1016  
5
L  1.10 10 cm  0.110  m  1.799 10 cm/V 1 / 2 5

Now
L
L
 0.10 
0.110
L
(a) L 
2 s
eN a
 fp  V DS sat   V DS
 L  1.10  m

(b) L  2.544 10 5    fp  V DS sat  

 0.3653  5  0.3653  1.6  
(i) L  1.799 10 5

L  2.326 10 5 cm  0.2326  m 
 0.3832  0.655  1  0.3832  0.655 
L 0.2326 L  7.35 10 cm  0.0735  m
6

Now
L
 0.10 
L 
(ii) L  1.799 10 5 
 L  2.326  m
_______________________________________

 0.3832  0.655  2  0.3832  0.655 
L  1.303 10 cm  0.1303  m 5

11.5 
(iii) L  1.799 10 5 
C ox

 ox 
3.9 8.85 10  14
 
 0.3832  0.655  4  0.3832  0.655 
t ox 120 10 8
L  2.205 10 cm  0.2205  m 5

 2.876 10 7 F/cm 2

L 0.2205
Q (b)  0.12 
V FB   ms  ss L L
C ox L  1.84  m
 0.5 
4 10 1.6 10 
10 19
_______________________________________
2.876 10 7
V FB  0.5223 V 11.6
 3 1016 
Now  fp  0.0259 ln    0.3758 V
10 
 max 
Q SD  1.5 10 
VT   V FB  2 fp
C ox 2 s


211.7  8.85  10 14 
We find eN a  1.6  10 19 3  10 16  
 4 1016 
 fp  0.0259 ln    0.3832 V
10 
 2.077 10 cm/V 1 / 2 5

 1.5 10  (a) Ideal,

x dT  

 411.7  8.85  10 0.3832   14
 1/ 2
k W
I D  n  VGS  VT 
2

 
1.6  10 19 4  10 16

   2 L
 0.05  15 
  1.0  0.4
2
 1.575 10 5 cm
 2  0.80 
 max 
QSD
 0.16875 mA
 
 1.6 10 19 4 1016 1.575 10 5   (i) V DS sat   1.0  0.4  0.6 V
 1.008 10 C/cm 7 2

L  2.077 10 5 
So
1.008 10 7

 0.3758  2  0.3758  0.6 
VT   0.5223  20.3832  1.150 10 cm  0.115  m
5
2.876 10 7
 0.595 V  L 
I D    ID
V DS sat   VGS  VT  1.25  0.595  0.655 V  L  L 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

  11.7
0.16875
0.80
 (a)
 0.80  0.115 
k n W
 0.19708 mA (i) I D   VGS  VT 
2


(ii) L  2.077 10 5  2 L
 0.075 
   100.8  0.35
2
 0.3758  4  0.3758  0.6  2 
 2.293 10 cm  0.2293  m
5
 0.07594 mA  75.94  A
 L  (ii) I D  I D 1  V DS 
I D    ID
 L  L   75.93751  0.021.5
   78.22  A
0.16875
0.80

 0.80  0.2293  1 1
(iii) ro  
 0.23655 mA  I D 0.02 75.94 
(b)  0.658 M   658 k 
 0.23655  0.19708  10 3 
1 1
 I D  (b)
ro   
    0.075 
 V DS   42  (i) I D   101.25  0.35
2

 2 
 ro  5.07 10 4   50.7 k 
 0.30375 mA
(c) V DS sat   VGS  VT  2.0  0.4  1.6 V (ii) I D  0.303751  0.021.5

(i) L  2.077 10 5   0.3129 mA

 0.3758  2  0.3758  1.6  (iii) ro 
1
 165 k 
6
 2.819 10 cm  0.02819  m 0.020.30375
_______________________________________
 L 
I D    ID
 L  L  11.8
  Plot
0.16875
0.80
 _______________________________________
 0.80  0.02819 
 0.17491 mA 11.9

(ii) L  2.077 10 5  (a) Assume V DS sat   1 V. Then

 0.3758  4  0.3758  0.6   sat 
V DS sat 
 1.425 10 5 cm  0.1425  m L
We find
 L  L (  m)  sat (V/cm)
I D    ID
 L  L  3 3.33 10 3
 
0.16875
0.80 110 4
 1
 0.80  0.1425  0.5 210 4
 0.20532 mA
1
0.25 410 4
 I D  0.13 7.69 10 4
ro   

 V DS  (b)
 0.20532  0.17491 10 3 
1 Assume  n  500 cm 2 /V-s, we have
     n  sat
 42 
Then
ro  6.577 10 4   65.77 k 
For L  3  m,   1.67 10 6 cm/s
_______________________________________
For L  1  m,   510 6 cm/s
For L  0.5  m,   10 7 cm/s
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

11.10 (a)
 n ox 1 IDL L
k n   n C ox   
t ox ro L  L 2 V DS


4253.98.85 10 14  0.1362 10 1.2 10   6.290 10 
3 4
6

110 10 8
1.2  0.16610  4 2

 1.334 10 4 A/V 2  0.1334 mA/V 2

 9.615 10 6
 k   W 
I D   n  VGS  VT   ro  1.04 10 5   104 k 
2

  
2 L (b)

 0.1334  20 
 0.8  0.45
2 1

 
0.1362 10 3 0.8 10 4
 6.290 10 6
 
 2  1.2  ro 
0.8  0.16610 4 2 
 0.1362 mA
 1.705 10 5
1 I D   L  
    ID   ro  5.865 10 4   58.65 k 
ro V DS V DS  L  L   _______________________________________

 IDL L  L1
V DS 11.11
(a)
2  L 
 I D L 1L  L    
 I D sat  
W n C ox
VGS  VT 2
 V DS  2L
L  10 
 
IDL
    500 6.9 10 8 VGS  1
2

L  L V DS
2
2
Now or
I D sat   0.173VGS  1
2 s
 
2
(mA)
L  fp  V DS   fp  V DS sat 
eN a and

L 2 s 1 I D sat   0.173 VGS  1 (mA) 1 / 2

V DS

eN a 2

  fp  V DS 1 / 2
(b)
1 / 3
  eff 
We find Let  eff   O  

2 s


211.7  8.85  10 14   C 
eN a  1.6  10 19 3  10 16  Where  O  1000 cm 2 /V-s and
 2.077 10 5 cm/V 1 / 2  C  2.5 10 4 V/cm
 3 1016  V
 fp  0.0259 ln    0.3758 V
10 
Let  eff  GS
t ox
 1.5 10 
V DS  V DS sat   V DS  VGS  VT  V DS We find
 0.8  0.45  2  2.35 V
 
C ox  ox  t ox  ox 
3.9 8.85 10 14  
Now t ox C ox 6.9 10 8
L


2.077 10 5 
 6.290 10 6 cm/V
or
o
V DS 2 0.3758  2.35 t ox  500 A

L  2.077  10 5  0.3758  2.35 Then

 0.3758  0.35 
5
 1.660 10 cm  0.166  m
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

VGS  eff  eff I D sat   1.0 

(ii) For V DS  1.0 V,  ds    
 4 10
6

1 -- -- 0  1.25 
2 410 5 397 0.370  3.2 10 6 cm/s
3 6  10 5 347 0.692  
I D  3.452 10 7 3.2 10 6 
4 8 10 5
315 0.989  1.10 mA
5 10  10 5 292 1.27 (iii) For V DS  1.25 V,  ds  410 6 cm/s
 
I D  3.452 10 7 4 10 6 
(c) The slope of the variable mobility curve is
 1.38 mA
not constant, but is continually decreasing.
_______________________________________ (iv) For V DS  2 V,  ds  410 6 cm/s
I D  1.38 mA
11.12 (c) For part (a), V DS sat   2 V
Plot
_______________________________________ For part (b), V DS sat   1.25 V
_______________________________________
11.13

(a) C ox 
3.98.85 10 14  11.14
Plot
200 10 8 _______________________________________
 1.726 10 7 F/cm 2
 C W 11.15
K n  n ox (a) Non-saturation region
2L



475 1.726 10 7 10  1 W 

I D   n C ox   2VGS  VT V DS  V DS
2

21.0  2 L
 4.10 10 4 A/V 2  0.410 mA/V 2 We have

For VGS  VT  2 V, V DS sat   2 V
C
C ox  ox  ox

(i) I D  0.410 220.5  0.5
2
 and
t ox k

 0.7175 mA W  kW , L  kL

(ii) I D  0.410 221.0  1.0
2
 also
 1.23 mA VGS  kVGS , V DS  kVDS

(iii) I D  0.410 221.25  1.25
2
 So
 1.409 mA 1  C  kW 
I D   n  ox 

(iv) I D  0.410 222  2
2
 2  k  kL 


 1.64 mA 
 2kVGS  VT kVDS  kVDS 
2

(b) I D  WC ox VGS  VT  ds Then
  
 10 3 1.726 10 7 2 ds I D   kI D
 3.452 10  A 10 In the saturation region,
1  C  kW 
ds

 3.452 10  mA I D   n  ox  kVGS  VT 

7 2
ds
2  k  kL 
 0.5 
(i) For V DS  0.5 V,  ds    4 10
6
  Then
 1.25  I D   kI D
 1.6 10 6 cm/s (b)
 
I D  3.452 10 7 1.6 10 6  P  I DV DD  kI D kVDD   k 2 P
 0.552 mA _______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

eN a x dT  r j  
11.16
I D sat   WC ox VGS  VT  sat
2x
VT    1  dT  1
C ox  L  rj 
C    
 kW  ox kVGS  VT  sat
 k  

1.6 10 19

5 10 1.419 10 5
16
 
or 2.876 10 7
I D sat    kI D sat 
 1  20.1419   1
 0.25  

 0.80  
_______________________________________ 0.25 
11.17 VT  0.0569 V
(a) _______________________________________
k n W
(i) I D max     VGS  VT 
2

2 L 11.19
 0.15  6  3.98.85 10 14 
  3  0.45 C ox 
2

 2  1.2  80 10 8
2.438 mA  4.314 10 7 F/cm 2
(ii) Scaled device:  2 1016 
V D  VGS  k 3  0.653  1.95 V  fp  0.0259 ln    0.3653 V
10 
 1.5 10 
 0.15   0.15 
k n      0.2308 mA/V 2
x dT  
 
 411.7  8.85  10 14 0.3653 
1/ 2

 k   0.65 
L  k 1.2  0.651.2  0.78  m  
1.6  10 19 2  10 16 
 
5
W  k 6  0.656  3.90  m  2.174 10 cm
Then VT  
 
1.6 10 19 2 1016 2.174 10 5  
 0.2308  3.9  4.314 10  7
I D max     1.95  0.45
2

 1  20.2174   1
 2  0.78   0.30  

 1.298 mA  
 0.70  0.30 
(b) (i) Pmax   I D max V D  2.4383 VT  0.0391 V
 7.314 mW
VT  VTO  VT
(ii) Pmax   1.2981.95
0.35  VTO  0.0391
 2.531 mW
_______________________________________  VTO  0.389 V
_______________________________________
11.18

ox 3.9 8.85 10 14  11.20
C ox 
t ox

120 10 8 C ox 
3.98.85 10 14 
200 10 8
 2.876 10 7 F/cm 2
 1.726 10 7 F/cm 2
 5 1016 
 fp  0.0259 ln    0.3890 V
10 
 3 1016 
 1.5 10   fp  0.0259 ln    0.3758 V
10 
 1.5 10 
x dT  
 
 411.7  8.85  10 14 0.3890  
1/ 2

 
 411.7  8.85  10 14 0.3758 
1/ 2

  
1.6  10 19 5  10 16  
 x dT  
  

 1.6  10 19 3  10 16 
 1.419 10 5 cm
 1.80 10 5 cm
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

VT  0.15 The average bulk charge in the trapezoid (per


1.6 10 3 10 1.80 10 
19 16 5 unit area) is
 L  L 
1.726 10 7 QB  L  eN a x dT  
 2 
 1  20.18  1
 0.30  
 or
 L  0.30 
  L  L 
QB  eN a x dT  
 0.30   2L 
0.15  0.5006 0.4832
 L  We can write
 L  0.484  m L  L 1 L 1 1
    L  a  b
_______________________________________ 2L 2 2L 2 2L
which is
11.21 L  L ab
 1
We have 2L 2L
L   L  a  b  
Now, Q B replaces QSD  max  in the
and from the geometry threshold equation. Then
(1) a  r j   x dT  r j  x dS   max 
2 2 2
Q B Q SD
and VT  
C ox C ox
(2) b  r j   x dT  r j  x dD 
2 2 2
eN a x dT  a  b  eN a x dT
From (1)  1  2L   C
C ox  
a  r j 2  r j  x dS 2  x dT2 or
ox

so that eN a x dT a  b 
VT   
a r j  x dS 
2
x 2
dT  rj C ox 2L
which can be written as Then substituting, we obtain
 2 2  eN x rj 
 2 x dS 
  x dS   x dT  VT   a dT   1    2  1
a  r j  1      1 C ox 2 L  rj 
 r j   r j   
 
 
 2x  
or   1  dD   2  1 
 2 2   rj  
 2 x dS  x dS   x dT 
a  rj  1    1 Note that if x dS  x dD  x dT , then     0
rj  rj   rj 
      and the expression for VT reduces to that
Define given in the text.
x2  x2 _______________________________________
 2  dS 2 dT
rj 11.22
We can then write We have L   0 , so Equation (11.27)
 2x  becomes
a  r j  1  dS   2  1 L  L L 1
 rj   
2L 2L 2
Similarly from (2), we will have

 rj  2x  
 2x   1   1  dT  1 
b  r j  1  dD   2  1  L  rj  
 rj    
or
where
rj  2x  1
x2  x2  1  dT  1 
 2  dD 2 dT L  rj  2
rj 
Then Equation (11.28) is
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1 eN a x dT   x dT 
Q B  eN a x dT   VT   
2 C ox  W 

1.6 10 3 10 1.80 10   2 

Then change in the threshold voltage is 19 5 2
 max 
16
Q B Q SD  
VT   
C oc C ox 4.314 10 2.2 10 7 4

or VT  0.0257 V
1 2eN a x dT  eN a x dT 
VT   _______________________________________
C ox C ox
which becomes 11.27
1 eN x
C ox 
3.98.85 10 14 
VT    a dT
2 C ox 120 10 8
_______________________________________  2.876 10 7 F/cm 2
 1016 
11.23  fp  0.0259 ln    0.3473 V
10 
Plot  1.5 10 
_______________________________________

 411.7  8.85  10 14 0.3473 
x dT  
 1/ 2

11.24
Plot  
1.6  10 19 10 16

  
5
_______________________________________  3.0 10 cm
eN a x dT   x dT 
11.25 VT   
C ox  W 
eN a x dT 
rj  2x  
VT     1  dT  1  In this case,   1
C ox 

L  rj  
 So
N 
e a kxdT   0.045 
1.6 10 10 1.0310 
19 16 5 2


 k   krj


 1
2kxdT  
 1 
2.876 10 W  7

 C ox   kL  kr j   W  1.11  m
 
 k  _______________________________________
or
VT  kVT 11.28
Plot
_______________________________________ _______________________________________
11.26
3.98.85 10 14 
11.29
C ox  eN a x dT   x dT 
VT   
80 10 8 C ox  W 
 4.314 10 7 F/cm 2 Assume that  is a constant, then
 3 1016 
 fp  0.0259 ln    0.3758 V
10 
N 
e a kxdT 
 1.5 10   k    kxdT 
VT   
x dT  

 411.7  8.85  10 0.3758 
14
 1/ 2
 C ox 
 
 kW 
  
1.6  10 19 3  10 16

   k 
5
 1.80 10 cm or
VT  kVT
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

11.30 Now
(a) ID  VCE
V
(i)  ox  G 10 8
0.0941 14.5
t ox 7
10 0.274 13.5
VG
6  10 6
10 6
0.454 12.3
200  10 8 5
10 0.634 10.7
 VG  12 V
10 4 0.814 8.6
12
(ii) VG  4V 10 3
0.994 2.7
3
(b)
_______________________________________
VG
(i) 6  10 6 
80  10 8 11.33
 VG  4.8 V One Debye length is
 kT e  
1/ 2
4.8
(ii) VG   1.6 V LD   s 
3  eN a 
_______________________________________
 
 11.7  8.85  10 14 0.0259  

1/ 2

11.31  
1.6  10 19 10 16   

 
(a) VG  83  24   ox t ox  6 10 6 t ox  or
t ox  4 10 6 cm LD  4.09 10 6 cm
o Six Debye lengths is then
or t ox  40 nm  400 A
6L D  0.246 10 4 cm  0.246  m

(b) VG  123  36   ox t ox  6 10 6 t ox   From Example 11.5, we have
t ox  6 10 cm 6
x dO  0.336  m, which is the zero-biased
o source-substrate junction width.
or t ox  60 nm  600 A At near punch-through, we will have
_______________________________________ x dO  6 L D  x d  L
where x d is the reverse-biased drain-
11.32
Snapback breakdown means M  1 , where substrate junction width. Now
0.336  0.246  x d  1.2
 IO 
  0.18 log 10  
9  or
 3 10 
x d  0.618  m
and
Then, at near punch-through we have
1
M  m  2  V  V DS  
1/ 2

V  x d   s bi 
1   CE   eN a 
 V BO 
or
Let V BO  15 V and m  3 . Now when
x d2 eN a
 Vbi  V DS 
M  1  3
2 s
V 
1   CE 

0.618 10  1.6 10 10 
4 2 19 16

211.78.85 10 
 15  14
we can write this as
3 which yields
V  Vbi  V DS  2.95 V
1   CE     VCE  15  3 1  
 15 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

From Example 11.5, we have Vbi  0.874 V, 11.35

so With a source-to-substrate voltage of 2 volts,
 2  V  V SB  
1/ 2
V DS  2.08 V
x dO   s bi 
which is the near punch-through voltage. The  eN a 
ideal punch-through voltage was
V DS  4.9 V 
 
 211.7  8.85  10 14 0.902  2  
1/ 2

_______________________________________   
1.6  10 19 3  10 16

 
or
11.34 x dO  0.354 10 4 cm  0.354  m
Vbi  0.0259  ln 
 
 10 3  10  19
  0.902 V
16
 We have 6 L D  0.142  m from the previous

 1.5  1010
2
  problem.
The zero-biased source-substrate junction Now
 2  V  V DS  V SB  
1/ 2
width is given by
1/ 2 x d   s bi 
2 V   eN a 
x dO   s bi 
 eN a 

 
 211.7  8.85  10 14 0.902  5  2  
1/ 2


 211.7  8.85  10 14 0.902  

 1/ 2
  
1.6  10 19 3  10 16


 
1.6  10 19 3  10 16 
  or
or x d  0.584 10 4 cm  0.584  m
x dO  0.197 10 4 cm  0.197  m Then
The Debye length is L  x dO  6 L D  x d
 kT e  
1/ 2  0.354  0.142  0.584
LD   s  or
 eN a  L  1.08  m



 11.7  8.85  10 14 0.0259    1/ 2
_______________________________________
 
1.6  10 19 3  10 16 
  11.36
or
6 C ox 
3.98.85 10 14   2.876 10 7 F/cm 2
LD  2.36 10 cm
120 10 8
so that eD I
6L D  0.142 10 4 cm  0.142  m VT 
C ox
Now Implant acceptor ions for a positive threshold
x dO  6 L D  x d  L voltage shift.
We have for V DS  5 V,
DI  

VT C ox  0.80 2.876 10 7 
 2  V  V DS   1.6 10 19
1/ 2
e
x d   s bi  2
 eN a   1.438 10 cm
12

_______________________________________

 211.7  8.85  10 14 0.902  5 

 1/ 2

 
1.6  10 19 3  10 16  
  11.37
or C ox 
3.98.85 10 14 
x d  0.505 10 4 cm  0.505  m 180 10 8
Then  1.9175 10 7 F/cm 2
L  0.197  0.142  0.505 eD I
VT 
or C ox
L  0.844  m Implant donor ions for a negative threshold
_______________________________________ voltage shift.
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

DI 
VT C ox

0.601.9175 10 7  V FB   ms 
Q ss
19
e 1.6  10 C ox
 7.19 10 cm 11 2
 1.08 
10 1.6 10 
11 19

7
_______________________________________ 1.9175 10
 0.9966 V
11.38
 2 1016 
(a)  ms  1.08 V  fn  0.0259 ln    0.3653 V
10 
3.98.85 10 14
  1.5 10 
C ox 
150 10 8


 411.7  8.85  10 14 0.3653   1/ 2

  

x dT
 2.30110 7 F/cm 2  1.6  10 19 2  10 16 
Q  2.1744 10 cm 5
V FB   ms  ss
C ox  max 
QSD

 1.08 
5 10 1.6 10 
10 19
 
 1.6 10 19 2 1016 2.1744 10 5  
7
2.30110 8
 6.958 10 C/cm 2
 1.115 V
 max 
Q SD
 6 1015    V FB  2 fn
 fp  0.0259 ln 
VTO
  0.3341 V
10  C ox
 1.5 10 
6.958 10 8

 411.7  8.85  10 14 0.3341   1/ 2
  0.9966  20.3653
 1.9175 10 7
  

x dT
 1.6  10 19 6  10 15  VTO  0.0969 V
 3.797 10 5 cm (b) For a negative threshold voltage shift,
 max 
QSD add donor ions.
VT  VT  VTO  0.40   0.0969
 
 1.6 10 19 6 1015 3.797 10 5    0.3031 V
8
 3.645 10 C/cm 2
VT C ox
 max 
Q SD Then D I 
VTO   V FB  2 fp e
C ox


0.3031 1.9175 10 7 
8
3.645 10 1.6 10 19
  1.115  20.3341
2.30110 7  3.63 1011 cm 2
VTO  0.2884 V _______________________________________
(b) For a positive threshold voltage shift, add
acceptor ions. 11.40
VT  VT  VTO  0.50   0.2884  4 1015 
(a)  fp  0.0259 ln    0.3236 V
10 
 0.788 V  1.5 10 
Then

3.9 8.85 10 14 
DI 
VT C ox 0.788 2.30110 7

  C ox 
80 10 8
e 1.6 10 19
2
 4.314 10 7 F/cm 2
 1.13 10 cm
12

_______________________________________ x dT  

 411.7  8.85  10 14 0.3236    1/ 2

  
1.6  10 19 4  10 15

 
11.39
 4.576 10 5 cm
(a)  ms  1.08 V
 max 
3.98.85 10 14 
QSD
C ox 
180 10 8
 
 1.6 10 19 4 1015 4.576 10 5  
8
 1.9175 10 7 F/cm 2  2.929 10 C/cm 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

 max 
Q SD Then
VTO   V FB  2 fp V SB (V) VT (V)
C ox
1 0.0443
2.929 10 8
  1.25  20.3236 3 0.0987
4.314 10 7 5 0.1385
 0.5349 V _______________________________________
(b) For a positive threshold voltage shift, add
acceptor ions. 11.42
VT  VT  VTO  0.40   0.5349 (a)
 0.9349 V  1017 
 fn  0.0259 ln    0.407 V
VT C ox 10 
 1.5 10 
Then D I 
e and

0.9349 4.314 10 7   
 411.7  8.85  10 14 0.407    1/ 2


  

1.6 10 19 x dT
 1.6  10 19 10 17 
 2.52 1012 cm 2 5
(c) Add acceptor ions.  1.026 10 cm
VT  VT  VTO  0.40   0.5349 n poly on n-type  ms  0.32 V


 0.1349 V We have
0.1349 4.314 10 7    
 max   1.6  10 19 1017 1.026  10 5
Q SD  
Then D I 
1.6 10 19  1.64 10 7 C/cm 2
 3.64 1011 cm 2 Now
_______________________________________  
VTP   1.64 10 7  1.6 10 19 5 1010  
8
80 10
  0.32  20.407 
3.98.85 10 14 
11.41
The total space charge width is greater than
xi , so from Chapter 10 or
VTP  1.53 V (Enhancement PMOS)
VT 
2e s N a
C ox
 2 fp  V SB  2 fp  (b) For VT  0 , shift threshold voltage in
positive direction, so implant acceptor ions.
Now eD I VT C ox
 1014  VT   DI 
 fp  0.0259 ln    0.228 V
10 
C ox e
 1.5 10  so
and 1.533.9 8.85 10 14  
C ox 
3.98.85 10 14  DI 

80 10 8 1.6 10 19  
500 10 8 or
 6.90 10 8 F/cm 2 DI  4.13 1012 cm 2
Then _______________________________________
VT


21.6 10 11.78.85 10 10 
19 14 14 1 / 2

6.90 10 8

 20.228  VSB  20.228 
or

VT  0.0834 0.456  VSB  0.456 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 11
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

11.43 11.45
The areal density of generated holes is We have the areal density of generated holes
   
 8 1012 10 5 750 10 8  6 1012 cm 2 as
The equivalent surface charge trapped is  g  t ox 
 
 0.10 6 1012  6 1011 cm 2 where g is the generation rate and  is the
Then radiation dose. The equivalent charge trapped
is
Q
VT   ss  xg t ox
C ox
where x is the fraction of generated holes

6 10 1.6 10 750 10 
11 19 8
trapped.
3.98.85 10 
14 Then
Q exg t ox  exg 
or
VT   ss     t 2
VT  2.09 V C ox ox t ox   ox  ox
_______________________________________ or
VT   t ox 
2

11.44
The areal density of generated holes is _______________________________________
61012 cm 2 . Now

C ox  ox 

3.9 8.85 10 14 
t ox 750 10 8
 4.6 10 8 F/cm 2
Then

VT  
Qss

  
6 1012 x  1.6 10 19 
C ox 4.6 10 8
where x is the fraction of holes that may be
trapped. For VT  0.50 V we find
x  0.024  x  2.4%
_______________________________________