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6
2 What should be the value of oxide capacitance required to store a charge of 25 fC in an NMOS
device, if W = 5 m, VGS – VTH = 2 V? Assume VDS = 0 V.
Solution
5 A MOSFET carries a drain current of 2 mA with VDS = 0.4 V in saturation. Determine the change in
VDS required to double the drain current and = 0.1 V–1. What is the device output impedance?
Solution
1 W
n Cox VGS VTH 1 λVDS 1
2
I D1
2 L
1 W
n Cox VGS VTH 1 λVDS 2
2
I D2
2 L
I D1 1 λVDS 1
ID2 1 λVDS 2
2 mA 1 0.1 0.4
4 mA 1 0.1VDS 2
VDS 2 10.8V.
VDS
Output impedance
I D
10.8 0.4
5.2 k.
4 mA 2 mA
6 A NMOS device operating in the saturation region with W/L = 10 carries a current of 5 mA.
Calculate the transconductance of the device.
Solution
W
g m 2 n Cox ID
L
6
2 200 10 10 5 10 3
4472 S.
8 A NMOS transistor is designed to be used as a resistor of resistance 500 in certain application,
with W/L = 12. Find the overdrive voltage needed.
Solution
1
Ron
W
n Cox VGS VTH
L
1
Overdrive voltage, VGS VTH
W
n Cox Ron
L
1
0.83 V.
200 106 12 500
10 Calculate the value of drain current in the circuit shown in Fig. 6.37, with W = 5 m, L = 0.5 m
and = 0.
Solution
1 W
n Cox VGS VTH
2
ID
2 L
VGS VDD I D RD
3 I D 20k
6
1 5 10
3 I D 20k 0.4
2
ID 200 106 6
2 0.5 10
I D 20k
2
105 I D 2.62 0.
On solving for ID, we get
I D 113.17 A
2I D
Overdrive voltage Vov 0.336 V
W
n Cox
L
VGS VTH Vov
0.736 V.
11 In the circuit shown in Fig. 6.37, what value of R is required to get a current of 75 A with W = 5
m, L = 0.5 m and = 0 ?
Solution
2I D
Vov
W
n Cox
L
2 75 106
0.2738 V
6 5 106
200 10
0.5 106
VGS VD
VTH Vov
0.4 0.2738 0.6738 V.
Therefore,
VDD VD
R
ID
3 0.6738
31.01 k.
75 106
18 In Fig 6.42, what is the current when VGS = 2 VTH? Find the region in which the device operates.
Solution
Assume that the device is in the saturation region. Then,
1 W
n Cox VGS VTH
2
ID
2 L
1 10
2VTH VTH
2
200 106
2 0.14
1 10
VTH
2
200 106
2 0.14
1 10
0.4
2
200 106
2 0.14
1.142 mA
VDS VDD I D RD
1.8 500 1.142 103
1.23 V.
Since VDS VGS VTH , the device operates in the saturation region.
19 In Fig 6.43, compute the value of W/L required to operate the transistor M1 in saturation region.
Solution
For M1 to operate in the saturation region,
2 L
1 W
0.8 10 200 106 1.8 0.4
3 2
2 L
W
4.08
L
If W 10 m, then L 2.45 m.
20 Compute the value of W/L for M1 in Fig 6.44 for a bias current of 0.5 mA. Assume = 0.
Solution
Since VGS = VDS, the device always operated in the saturation region.
VGS VDD I D RD
1 W
n Cox VGS VTH
2
ID
2 L
1 W
n Cox VDD I D RD VTH
2
2 L
W 2I D
L n Cox VDD I D RD VTH 2
2 0.5 103
200 106 1.8 0.5 103 600 0.4
W
4.13.
L
21 Calculate the bias current of M1 in Fig 6.45 if = 0.
Solution
23 Calculate the value of W/L required to get a drain current of 1 mA in the circuit shown in Fig 6.47.
Assume = 0.
Solution
VGS VDD I D RD
1 W
n Cox VGS VTH 1 VDS
2
ID
2 L
1 W
1 103 200 106 VDD I D RD VTH 1 0.1VDD I D RD
2
2 L
1
200 106 1.8 1 103 500 0.4 1 0.11.8 1 103 500
W 2
2 L
W
11.98.
L
24 In the circuit of Fig. 6.48, W/L = 10/0.18 and = 0. What is the value of current flowing through M1,
assuming that the device operating at the edge of saturation?
Solution
1 W
n Cox VGS VTH 1 VDS
2
ID
2 L
VDS VB VTH
0.7 0.4 0.3V
1 10
0.7 0.4 1 0.1 0.3
2
I D 200 106
2 0.18
0.515 mA.
25 An NMOS device operating in the deep triode region with = 0 must provide a resistance of 20
k. Determine the required value of W/L if VGS= 0.5 V.
Solution
1
Ron
W
n Cox VGS VTH
L
W 1
L n Cox Ron VGS VTH
1
2.5.
200 10 20 103 0.5 0.4
6
26 Determine the transconductance of a MOSFET operating in saturation, if W/L = 10/0.18 and ID =
3 mA. If W/L ratio is doubled, compute the new value of transconductance keeping ID constant.
Solution
W
g m 2 n Cox ID
L
10
2 200 106 3 103
0.18
8.164 103 S
W
If gets doubled, then new value of transconductance,
L
28 Assuming a constant VDS, a graph of gmrO verses (VGS – VTH) of an NMOS gives a slope of 50 V–1 .
Find the W/L ratio if = 0.1 V–1 and ID = 0.5 mA.
Solution
W 1
g m n Cox VGS VTH and rO .
L ID
W
n Cox
g m rO L V V .
ID GS TH
W
n Cox
A graph of g m rO verses VGS VTH will be straight line with slope L.
ID
Therefore,
W
n Cox
50 L
ID
W 50 I D
L n Cox
50 0.1 0.5 103
12.5.
200 106
29 A NMOS device has a current of 0.5 mA with W/L = 5 and = 0.1 V–1. Calculate the intrinsic gain
gmrO.
Solution
W
g m n Cox ID
L
200 106 5 0.5 103 1 103 S
1
and rO
ID
1
20 k
0.1 1 103
g m rO 1 103 20 k 20.
33 If = 0, what value of W/L places the transistor M1 at the edge of saturation in Fig 6.53?
Solution
VD = VG + VTH
1 0.4 1.4 V.
1
p Cox VSG VTH
W 2
ID
2 L
I D IR1
VD
R1
1.4
1.4 mA
1k
W 2
1.4 103
100 10 0.8 0.4
6 2
L
175.
37 For the circuit shown in Fig 6.57, draw the ac equivalent circuit assuming M1 and M2 operates in
saturation and each has channel length modulation coefficients n and p, respectively. Determine
the small signal voltage gain of the circuit.
Solution
From the equivalent circuit, Vout = – (gmn + gmp) (rOn||rOp).