Metal Oxide Semiconductor Field Effect Transistors

MOSFET
Murad Mirzayev
 Field Effect (MOS) Transistor

Typically L = 1 to 10 m, W = 2 to 500 m, and the thickness of the oxide

layer is in the range of 0.02 to 0.1 m.

September 17, 2007 2

Different types of FETs

 Metal-Semiconductor FET (MESFET)

Basic MOSFET (n-channel)
 The gate electrode is
placed on top of a very
thin insulating layer.
 There are a pair of small
n-type regions just
under the drain &
source electrodes.
 If apply a +ve voltage to
gate, will push away the
‘holes’ inside the p-type
substrate and attracts the
moveable electrons in
the n-type regions under
the source & drain
electrodes.
Basic MOSFET (n-channel)
 Increasing the +ve gate
voltage pushes the p-
type holes further away
and enlarges the
thickness of the created
channel.
 As a result increases the
amount of current which
can go from source to
drain — this is why this
kind of transistor is
called an enhancement
mode device.
 Cross-section and circuit symbol of an n-type
MOSFET.
 Operation
The enhancement-type NMOS transistor with a
positive voltage applied to the gate.

An n channel is
induced at the top
of the substrate
beneath the gate.

September 17, 2007 7

 Triode Region

> Vt ,small vDS

vGS
applied.

the channel
conductance
is proportional
to vGS - Vt,
and is
proportional
to (vGS - Vt)
vDSS.eptember 17, 8
 Saturation
Region
> Vt.
vGS

The induced
channel acquires
a tapered shape
and its
resistance
increases as vDS
is increased.
September 17, 2007 9
 Derivation of the iD - vDS characteristic of the
NMOS transistor.

September 17, 2007 10

 Increasing vDS beyond vDSsat causes the channel
pinch-off point to move slightly away from the
drain, thus reducing the effective channel length
(by L).

September 17, 2007 11

 Drain current iD versus vDS
Enhancement-type NMOS transistor operated with vGS > Vt.

September 17, 2007 12

I-V Characteristics of MOSFET
 Drain current for REALLY small VD

Z  1 2
ID   C V  V V  VD 
L n i  G T 2

D Linear operation
ID 
Z
 n Ci VG  VT VD
L
 D  VG  VT 
V

Channel Conductance:

g D  ID  ZL  nC i(VG  VT
V
D VG
)
Transconductance:

g m  ID Z
 L  n Ci D
V
G VD
ECE 663 V
 In Saturation

 Channel Conductance:
g D  ID 0
V
D VG

Z 2
I D sat  nCi VG VT
2L

 Transconductance:
g m  ID  Z  nC iVG  VT
V L
G VD

ECE 663
MOSFET Output Curves

 A family of curves
representing the V-I
characteristics of
transistors.
 A plot of drain
current, ID, as a
function of drain-to-
source voltage, VDS,
for several values of
VGS.
 iD - vGS characteristic for an enhancement-type NMOS transistor
in saturation (V t = 1 V and k’n(W/L) = 0.5 mA/V2).

September 17, 2007 17

 Effect of vDS on iD in the saturation region.

The MOSFET parameter VA is typically in the range of 30 to 200 V.

September 17, 2007 18

Ideal Output Characteristics of MOSFET
Ideal Transfer Characteristics of MOSFET
Voltage-Dependent Resistor
 In the ON state, the MOSFET channel can be viewed as a
resistor.

 Since the mobile charge density within the channel

depends on the gate voltage, the channel resistance is
voltage-dependent.
 Comparison: BJT vs.
 MOSFET
In a BJT, current (I ) is limited by diffusion of carriers from
C

the emitter to the collector.

 ICincreases exponentially with input voltage (VBE), because the
caVBErri/eTVr concentration gradient in the base is proportional
e
to
 In a MOSFET, current (ID) is limited by drift of carriers from
the source to the drain.
 IDincreases ~linearly with input voltage (VG), because the
carrier concentration in the channel is proportional to (VG-VTH)

In order to understand how MOSFET design parameters affect

MOSFET performance, we first need to understand how a MOS
capacitor works...
Types of MOSFET
Subthreshold Conduction
CMOS
Circuit
 Cross section of a CMOS integrated circuit. Note that
the PMOS transistor is formed in a separate n-type
region, known as an n well. Another arrangement is also
possible in which an n-type body is used and the n
device is formed in a p well.
September 17, 2007 26
Transistors as Switches

 We can view MOS transistors as electrically

controlled switches
 Voltage at gate controls pg =a0th from

sogu=r1ce to d
drain d d
nMOS g OFF
ON
s s s

d d d

pMOS g OFF
ON
s s s

Fabrication and Layout Slide 27

CMOS
Inverter
A Y
0
VDD
1

A Y

A Y
GND
Fabrication and Layout Slide 28
CMOS
Inverter
A Y
0
VDD
1 0 OFF
A=1 Y=0

ON
A Y
GND
Fabrication and Layout Slide 29
CMOS
Inverter
A Y
0 1
VDD
1 0 ON
A=0 Y=1

OFF
A Y
GND
Fabrication and Layout Slide 30