Ans Sec2

1. Doping is the process of adding impurity atoms to a

semiconductor in order to modify its conductive properties.
2. A pentavalent atom (donor) has five valence electrons and a
trivalent atom (acceptor) has three valence electrons.
3. An n-type material is formed by the addition of pentavalent
impurity atoms to the intrinsic semiconductive material.
4. A p-type material is formed by the addition of trivalent
impurity atoms to the intrinsic semiconductive material.
5. The majority carrier in an n-type semiconductor is the free
electron.
6. The majority carrier in a p-type semiconductor is the hole.
7. Majority carriers are produced by doping.
8. Minority carriers are thermally produced when electron-hole
pairs are generated.
9. A pure semiconductor is intrinsic. A doped (impure)
semiconductor is extrinsic.
10. A pn junction is the boundary between p-type and n-type
semiconductors in a diode.
11. Diffusion is the movement of the free electrons (majority
carriers) in the n-region across the pn junction and into the p
region.
12. The depletion region is the thin layers of positive and
negative ions that exist on both sides of the pn junction.
13. The barrier potential is the potential difference of the
electric field in the depletion region and is the amount of
energy required to move electrons through the depletion
region.
14. The barrier potential for a silicon diode is approximately
0.7 V.
15. The barrier potential for a germanium diode is
approximately 0.3 V.