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Features A2
■ IT(RMS) = 16 A
■ VDRM / VRRM = 600, 700 and 800 V
G
s )
t(
A1
■ IGT = 20 to 30 mA
u c
Description
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Based on ST’s Snubberless technology providing
A1
A2
P r
G
ISOWATT220AB
high commutation performances, the
T1620-600W/700W/800W and T1630-600W are
t e
especially recommended for use with inductive
o le
loads such as rice cookers. They comply with UL
standards (ref. E81734).
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( s )
c t
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1 Characteristics
s )
A²s
dI/dt
Critical rate of rise of on-state current IG = 2 x IGT , tr
≤ 100 ns
F = 120 Hz Tj = 125 °C
c
50
t( A/µs
e
4 A
PG(AV)
Tstg
Average gate power dissipation
Storage junction temperature range
le tTj = 125 °C 1
- 40 to + 150
W
Table 2. b
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
O
Symbol Test conditions
) - Quadrant
Value
Unit
t ( s T1620 T1630
IGT (1)
VD = 12 V RL = 30 Ω
u c I - II - III MAX. 20 30 mA
VGT
Pr
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III MIN. 0.2 V
(2)
IH IT = 250 mA MAX. 35 50 mA
t e
le
I - III 70 80
IL IG = 1.2 IGT MAX. mA
s o II 80 100
Ob
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
(dI/dt)c
(2) Without snubber, Tj = 125 °C
MIN.
MIN.
300
8.5
500
11
V/µs
A/ms
IDRM Tj = 25 °C 5 µA
VDRM = VRRM MAX.
IRRM Tj = 125 °C 1 mA
1. for both polarities of A2 referenced to A1.
s )
Table 4.
Symbol
Thermal resistance
Parameter
cValue t( Unit
e P
Figure 1. Maximum power dissipation versus Figure 2.
on-state rms current t
On-state rms current versus case
le
temperature
P(W)
s o IT(RMS)(A)
18
16
α=180°
O b
18
16
α=180°
14
12
) - 14
12
10
t ( s 10
c 8
du
6 6
180° 4
o
4
α
2
0
P r IT(RMS)(A)
α 2
0
0 25 50
TC(°C)
75 100 125
e
0 2 4 6 8 10 12 14 16
Figure 3.
le t Relative variation of thermal Figure 4. On-state characteristics
Ob 1.E+00
K=[Zth/Rth]
100
ITM(A)
Tj max.
Vt0 = 0.85V
Rd = 20 mΩ
Zth(j-c)
1.E-01 Tj = Tj max.
Zth(j-a)
10
1.E-02
Tj = 25°C
tp(s) VTM(V)
1.E-03
1
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 5. Surge peak on-state current versus Figure 6. Non-repetitive surge peak on-state
number of cycles current for a sinusoidal
ITSM(A) ITSM(A), I2t (A2s)
220 10000
Tj initial=25°C
200
180 t=20ms
)
60
I2t
s
40
t(
20
Number of cycles tp(ms)
c
0
100
u
1 10 100 1000
0.01 0.10 1.00 10.00
o d
Figure 7. Relative variation of IGT,IH, IL vs
junction temperature
Figure 8.
r
Relative variation of critical rate of
P
decrease of main current versus
(typical values)
e
(dV/dt)c (typical values)
t
3.0
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.0
o le
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
b s
1.8
1.6
-O
1.4
2.0
1.2
)
1.5 IGT 1.0
( s 0.8
ct
1.0 IH & IL
0.6
0.4
du
0.5
0.2
Tj(°C) (dV/dt) (V/µs)
ro
0.0 0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.1 1.0 10.0 100.0
Figure 9.
e P
Relative variation of critical rate of decrease of main current versus junction
et
temperature
ol
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
bs
8
O 6
1
Tj(°C)
0
0 25 50 75 100 125
T 16 20 - 600 W
Triac series
Current
16 = 16 A
Sensitivity
20 = 20 mA
s )
t(
30 = 30 mA
Voltage
600 = 600 V
700 = 700 V
u c
800 = 800 V
o d
Package
W = ISOWATT220AB
P r
t e
Table 5. Product Selector
o le
Voltage (xxx)
b s
-O
Part Numbers Sensitivity Type Package
600 V 700 V 800 V
T1620-600W X
s )
t(
uc
T1620-700W X 20 mA
Snubberless ISOWATT220AB
T1620-800W X
T1630-600W
o d X 30 mA
P r
et e
o l
s
Ob
Min.
r o
Max. Min. Max.
A 4.40
e P 4.60 0.173 0.181
t
A
le
H B B 2.50 2.70 0.098 0.106
so
D 2.50 2.75 0.098 0.108
Ob
Dia E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
-
L6
L3
L2
F2
c t F2
G
1.15
4.95
1.70
5.20
0.045
0.195
0.067
0.205
u D
od
F1
G1 2.40 2.70 0.094 0.106
L4
Pr
H 10.00 10.40 0.394 0.409
e
F E L2 16.00 typ. 0.630 typ.
le t G1
L3 28.60 30.60 1.125 1.205
so
G
L4 9.80 10.60 0.386 0.417
Ob
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
4 Ordering Information
T1620-600W T1620600W
T1620-700W T1620700W
ISOWATT220AB 2.3 g 50 Tube
T1620-800W T1620800W
T1630-600W T1630600W
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c t(
5 Revision history d u
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Table 8.
Date
Document revision history
Revision
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Changes
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t ( s
u c
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P r
e t e
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