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International Science and Technology Conference (FarEastСon 2020) IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1079 (2021) 052079 doi:10.1088/1757-899X/1079/5/052079

Receiving Perfect SiC-AlN Monocrystals of Solid Solution

SiC-AlN/SiC and Models of Series Lanes of
Electroluminescence Light-Emitting Diodes; their Use

A V Sankin1, V I Altukhov1, N V Vahilevich1

1
Branch in Pyatigorsk, North Caucasus Federal University, 56 Sorok Let Oktyabrya
st., 357500 Pyatigorsk, Russia

E-mail: zam-id@pfncfu.ru

Abstract. The 4H-SiC monocrystals and SiC-AlN solid solutions are described. Models of a
series of strips (levels) of solid solutions of Silicon carbide SiC - AlN and hetero-structures
(light-emitting diodes) n- SiC/p- (SiC)1-x (AlN)x as a function of x composition are proposed.
The SiC/1-x (AlN)x diagram defines the positions of the glow center levels, depending on x. In
the series of electroluminescence bands of the light-emitting diodes SiC/SiC-AlN, continuous
dependences of the positions of short-wave and long-wave bands in the K-minimum
conductivity zone are defined, respectively, as continuous functions of the density of current
through contact. This is very important for the wide practical application of the resulting light-
emitting diodes with the ability to select radiation throughout the visible spectrum when
changing the composition of x solid silicon carbide solution.

1. Introduction
The relevance of the work is determined by both the practical and theoretical significance of diodes
and optoelectronic devices based on solid silicon carbide solutions. Getting perfect SiC and SiC-AlN
monocrystals has great scientific significance. According to CREE, silicon carbide is the main
promising material of power electronics. The technology of obtaining SiC and SiC-AlN crystals, its
solid solutions and films based on them has its own history of [1,2-4]. The main drawback of these
technologies is the lack of reliable control over the size of working temperature gradients and the
appearance of a large number of mechanical stresses, cracks and impurities in the crystal.

2. Prospects for the use of wide-area semiconductors

Wide-zonable semiconductor materials and, in particular, solid silicon carbide solutions with
nitridium aluminium (SiC) 1-x (AlN)x with the width of the prohibited E g zone from 3,3 to 6.0 (eV)
are of significant interest for the creation of high-temperature, persistent, high-voltage devices,
optoelectronic devices in the short-wave area of visible light and ultraviolet light. With the
development of new technologies, it became possible to obtain hetero-structures and almost ideal
Shottky barriers, which allows to design on their basis the power elements of electronics and
devices with extreme characteristics. This is due to the huge development of researchers to the
physics and technologies of wide-zoning hetero-structures. The authors have patented a new
method of obtaining SiC monocrystals, and SiC-AlN [5]. Features of the solid solution technology
(SiC)1-x (AlN)x as first shown are that the receipt of a given composition x is determined by the
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International Science and Technology Conference (FarEastСon 2020) IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1079 (2021) 052079 doi:10.1088/1757-899X/1079/5/052079

formula: x=ay+b, where x-concentration AlN in ES (SiC) 1-x (AlN)x; y - CAlN (mol%)-1; a= 0,0095;
b=0,015.

3. Setting a task. Creating a model

Solid SiC solutions are currently intensively being investigated. In particular in the works of the
[6-9] identified areas of stabilization of a number of polytips (3C, 2H, 4H, 6H, 15R) solid solutions
(SiC)1-x (AlN)x, received at the T=2370-2190 C for compositions 0,04  x 0,95. The authors of
this work, taking into account the available data of experiments [6], proposed models that, if
necessary, determine the positions of the series of stripes of photo- and cathode-luminescence
(PL/CL) as continuous functions of the composition of 0,05 x 0,95 of the radiation spectrum in
question (SiC)1-x (AlN)x from 1,8 to 3,8 (eV). In fact, it allows you to control the color range of
radiation.
It is shown that, taking into account the slight change (K x=1), the model is also adequate for the
position of the highs of the series of radiation bands of electroluminescence of LEDs (hetero-
structures) n-SiC/p-(SiC)1-x (AlN)x in the entire radiation area. The positions of the highs of long-
wave and short-wave transitions in K-, M- minimums of the zone structure, respectively, of the
density of current through contact have been obtained. It is shown that as the composition of x
increases, the energy levels of the glow centers shift towards the corresponding energy gaps of ES
(SiC)1-x (AlN)x towards the conduction zone. This is due to the redeployment of the glow centers in
SiC and it is even possible to reach the surface of the AlN crystal at x 1.

4. Calculation
Electroluminescence of SiC/ (SIC) 1-x (AlN)x (Figure 1). For the series of LEDs n-SiC/p-(SiC)1 -x
(AlN)x is similar (1) at K x=1 according to the experience data we find

E0x = Egx – (1-x) E. (1)

Here E  E2  1,05, and multiplier (1-x) defines the «speed» of E0x levels approaching the
corresponding Egx gap as the composition of x increases. At the same time, for highs of long-wave
glow bands E0x1 and E0x2 at x1=0,05; Eg1 =3,28 and x2=0,24; Eg2=3,39, according to (1), we get

3,28-(1-0,05)1,05 =2, 26= E01,

E01,2 = 3,39-(1-0,24)1,05=2,63=E02 (эВ). (2)

For highs of less intense short-wave radiation bands of E01 and E02 LEDs at the corresponding
values of x1=0,05; x2=0,24 и 1=0,73; 2 =0,65, according to, (7) we find

3,28 (0,73+0,05) =2,56= E0i1,

E0i1,2 = 3,39 (0,65+0,24) =3, 01= E0i2 (эВ). (3)

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International Science and Technology Conference (FarEastСon 2020) IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1079 (2021) 052079 doi:10.1088/1757-899X/1079/5/052079

Figure 1. The Spectrums and scheme of the SiC/(SiC) 1-x (AlN)x levels of electroluminescence at
300 K [6].

1, 1 x = 0,05; 1, 2 – J = 3 A; 1, 2 – J=20 A (direct current). 2, 2, 3 – x = 0,24; 3 – J = 30 A

(reverse current); Е1 ,Е2 – indirect in K-minimum And Е1i ,Е i 2 – в M- minimum transitions; Е3, Е4 –
J=20 и Е5 – J = 30 (A), accordingly.
The presence of J x current density through the LED contact event results in the displacement of
radiation bands into the short-wave region of the spectrum. At the same time, if the derivative dE0ix
/dJx=tg (to designate through , similar to (1), when the current is increment Jx for highs of
radiation bands receive

EJx  E0Jx,Э =E0ix,L + (1-х)Jx . (4)

According to the data of the experiments   0,0100,012. Assuming that at x=0,05 the
maximum luminescence band is at E0ix,L=2,53 и Jx=3, then for the original band EJx1 (i.e. for the
first maximum band of EJx1 electroluminescence) according to the formula (4) we find

EJx = 2,53+0,01(1-0,05)3 = 2,56 (eV). (5)

This corresponds to the experienced value of 2,55 eV (see table 1).

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International Science and Technology Conference (FarEastСon 2020) IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1079 (2021) 052079 doi:10.1088/1757-899X/1079/5/052079

Table 1. Comparison of calculated and experienced positions of maximums of the glow bands EL
SiC/AlN of LED.

Е0=Еi0Э Е10 Е10i Е20 Е20i Е30J Е40J Е50J

(эВ)
J, A 3 20 30
x 0,05 0,24 0,24
Е0экс 2,25 2,51 2,62 3,00 2,69 3,10 3,26
Е0рас 2,26 2,56 2,63 3,01 2,70 3,12 3,27

For maximums of elecroluminescence bands in the presence of currents through contact

similarly (4) we receive

E0Ji = E0Jx + (1-xi) Ji , Ji = Jxi - Jx(i-1) (6)

Then for the values of x1=0,05 ; x2 = x3 =0,24 and currents through contact J1=3, J2=20 и J3=30
(A) taking into account that J1 =17, J2 =17 и J3 =27, by formula (6), we find

2,55+0,01(1-0,05) 17=2,70= E0J3  E03,

E0i (J1 ,J2, J3) = 3,00+0,01(1-0,24) 17=3,12= E0J4  E04,
3,00+0,01(1-0,24) 27=3,27= E0J5  E05 (eV). (7)

5. Discussion
The resulting values of highs in radiation bands in the presence of current through contact are
consistent with the data of the experiments [6] for SiC/(SiC)1-x (AlN)x and are shown in table 1
[10,11,12]. The results are given on the eletroluminescence of solid solutions (SiC) 1-x (AlN)x and
structures based on them. The possibility of creating varizones hetero-structures of SiC/(SiC) 1-x
(AlN)x LEDs for ultraviolet (UV) radiation sources has been realized.
So on the basis of these materials have already created LEDs, detectors, signal mixers at
microwave frequencies, low-inertial photo-detectors of modulated light and field transistors
[1,2,13]. Their characteristics are determined by the height of the potential barrier and surface
states and mechanisms of thermoelectronic, thermo-field and field emissions [3,4,14].

6. Conclusion
Thus, the calculations and comparisons of their results with the data of experiments confirm the
assumptions about the presence of impurity zones in solid solutions of SiC. The resulting LEDs
based on solid silicon carbide solutions have high specific characteristics, have high stability and
can be successfully used in transport, construction and in various fields of industry.

7. References
[1] Safaraliyev G K 2011 Solid solutions based on silicon carbide (Moscow) p 296 (In Russ)
[2] Schubert F E 2008 Svetodiody (Moscow: Fismatlit) p 331 (In Russ)
[3] Safaraliyev G K, Bilalov B A, Kurbanov M K, Kasyanenko I S, Altukhov V I, Sankin A V
2015 Calculating the height of the Shottka barrier on metal contact with semiconductor solid
solution (SiC)1-x (AlN)x. Microelectronics, Integrated Circuit Elements 44(6) 453 (In Russ)
[4] Altukhov V I, A V Sankin, A S Sigov, D K Sysoev, E G Yanukyan, S V Filipova 2018 Non-
linear in the concentration of surface states model of the Shottka barrier and calculation of

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International Science and Technology Conference (FarEastСon 2020) IOP Publishing
IOP Conf. Series: Materials Science and Engineering 1079 (2021) 052079 doi:10.1088/1757-899X/1079/5/052079

volt-amper characteristics of diodes based on SiC and its solid solutions in the composite
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(In Russ)
[5] Sankin A V, Altukhov V I, Kazarov B A, Kasyanenko I S, Osmolovskiy L M Device to
produce perfect silicon carbide monocrystals with additional regulatory contours of induction
heating Patent for useful model №173041 (In Russ)
[6] Safaraliyev G K, Tairov J M, Tsvetkov V F 1991 Wide-zone solid solutions (SiC) 1-x (AlN)x.
(Physics and Semiconductor Techniques) 25 (8) (In Russ)
[7] Safaraliyev G K, Bilalov B A, Kurbanov M K, Kargin N I, Ramazanov S M, Gusev A S
2013 Features of the formation of a potential barrier in the structures of Me/SiC 1-x (AlN)x
/SiC (Vestnik nacionalnogo issledovatelskogo yadernogo universiteta MIFI) 2(2) 273 (In
Russ)
[8] Safaraliyev G K, Kargin N K, Kurbanov M K, Bilalov B A, Ramazanov S M, Gusev A S
2014 Study of the impact of processing regime parameters on the height of potential barrier
of the structure of Me/(SiC) 1-x(AlN)x (Vestnik nacionalnogo issledovatelskogo yadernogo
universiteta MIFI) 3(1) 63 (In Russ)
[9] Kargin N I, Safaraliyev G K, Kharlamov N A, Kuznetsov G D, Rynda S M 2013 Kinetic
features of the receipt of hard solution films (SiC)1-x (AlN)x by ion spraying (The news of
universities North Caucasus region Technical sciences) 6 118
[10] Altukhov V I, Sankin A V, Dadashev R H, Sigov A S, Kargin N I, Kardashova G D 2019
Technology of obtaining wide-area materials, heterostructures, diodes based on silicon
carbide and calculating their characteristics (Grozny: Book Publishing) p 102 (In Russ)
[11] Siklitsky V 2003 New Semiconductor Materials, Characteristics and Properties SiC, AlN,
GaN (Electronic Archive)
[12] Lebedev A A 1999 Options deep centers in silicon carbide (Fizika i Tekhnika
Poluprovodnikov) 33(2) 129 (In Russ)
[13] Lebedev A I 2008 Physics of Semiconductor Devices (Moscow: Fismatlit) (In Russ)
[14] Altukhov V I, Kasyanenko I S, Sankin A V, Bilalov B A, Sigov A S 2016 Calculating the
Shottka barrier and volt-amper characteristics of metal-solid solutions based on silicon
carbide Fizika iTekhnika Poluprovodnikov 50(9) 1190 (In Russ)