PD - 9.

1506

PRELIMINARY IRFR/U9024N
HEXFET® Power MOSFET
l Ultra Low On-Resistance D
l P-Channel VDSS = -55V
l Surface Mount (IRFR9024N)
l Straight Lead (IRFU9024N) RDS(on) = 0.175Ω
l Advanced Process Technology G
l Fast Switching
ID = -11A
l Fully Avalanche Rated S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
D -P a k I-P a k
The D-Pak is designed for surface mounting using T O -2 52 A A TO -2 5 1 A A
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -11
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8 A
IDM Pulsed Drain Current  -44
PD @TC = 25°C Power Dissipation 38 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 62 mJ
IAR Avalanche Current -6.6 A
EAR Repetitive Avalanche Energy 3.8 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -10 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.3
RθJA Junction-to-Ambient (PCB mount)** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110

6/26/97
IRFR/U9024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -6.6A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, I D = -250µA
gfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A†
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 19 ID = -7.2A
Qgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 „†
td(on) Turn-On Delay Time ––– 13 ––– VDD = -28V
tr Rise Time ––– 55 ––– ID = -7.2A
ns
td(off) Turn-Off Delay Time ––– 23 ––– RG = 24Ω
tf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10 „†
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 350 ––– VGS = 0V

Coss Output Capacitance ––– 170 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5†

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -11

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -44
(Body Diode)  p-n junction diode. S

V SD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, V GS = 0V „

t rr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2A
Q rr Reverse Recovery Charge ––– 84 130 nC di/dt = 100A/µs „†
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 ) This is applied for I-PAK, LS of D-PAK is measured between
‚ Starting TJ = 25°C, L = 2.8mH lead and center of die contact
RG = 25Ω, IAS = -6.6A. (See Figure 12)
ƒ ISD ≤ -6.6A, di/dt ≤ 240A/µs, VDD ≤ V (BR)DSS, † Uses IRF9Z24N data and test conditions.
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
 IRFR/U9024N
100
VGS 100 VGS
TOP -15V
TOP -15V
-10V
-8.0V -10V
-I D , Drain-to-Source Current (A)

-8.0V

-I D , Drain-to-Source Current (A)

-7.0V
-6.0V -7.0V
-6.0V
-5.5V
-5.5V
-5.0V
-5.0V
BOTTOM -4.5V
BOTTOM -4.5V
10 10

-4.5V
1 -4.5V 1

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 150 °C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = -11A
R DS(on) , Drain-to-Source On Resistance
-I D , Drain-to-Source Current (A)

2.0
TJ = 25 ° C
10
TJ = 150 ° C
(Normalized)

1.5

1.0
1

0.5

V DS = -25V
20µs PULSE WIDTH V GS = -10V
0.1 0.0
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRFR/U9024N
700 20
V GS = 0V , f = 1MH z I D = -7 .2A
C is s = C gs + C g d , Cds SH OR TED

-V G S , G a te -to -S o u rc e V o lta g e (V )
600 C rs s = Cgd V DS = -44 V
C os s = C ds + C gd 16 V DS = -28 V
C , C a p a c ita n c e (p F )

500
C is s
12
400 C os s

300 8

200 C rs s
4
100
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
0 0 A
A
1 10 100 0 5 10 15 20 25

V D S , Drain-to-Source V oltage (V) Q G , Total G ate C harge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)

100
TJ = 150 ° C
-II D , Drain Current (A)

10 10us

TJ = 25 °C
10 100us

1 1ms

1 10ms

TC = 25 °C
TJ = 150 °C
VGS = 0 V Single Pulse
0.1 0.1
0.2 0.6 0.9 1.3 1.6 1 10 100
-VSD,Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area
Forward Voltage
 IRFR/U9024N
12.0 RD
VDS

VGS
D.U.T.
RG -
9.0
+ VDD
-I D , Drain Current (A)

-10V
Pulse Width ≤ 1 µs
6.0 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

3.0
td(on) tr t d(off) tf
VGS
10%
0.0
25 50 75 100 125 150
T C , Case Temperature ( ° C)
90%
VDS

Fig 9. Maximum Drain Current Vs.

Case Temperature Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10
0.05
0.02 SINGLE PULSE PDM
0.01 (THERMAL RESPONSE)
0.1
t1

t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFR/U9024N
VDS L
120
ID

EAS , Single Pulse Avalanche Energy (mJ)

RG D .U .T - V TOP -3.0A
V DD
+ DD 100 -4.2A
IA S A
D R IV E R BOTTOM -6.6A
- 20V
tp 0 .0 1 Ω
80

60
15V

40
Fig 12a. Unclamped Inductive Test Circuit
20
I AS

0
25 50 75 100 125 150
Starting T J, Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFR/U9024N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD ]

*** V GS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRFR/U9024N

Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)

2.38 (.094)
6.73 (.265) 2.19 (.086)
6.35 (.250) 1.14 (.045)
0.89 (.035)
-A-
5.46 (.215) 1.27 (.050) 0.58 (.023)
5.21 (.205) 0.88 (.035) 0.46 (.018)

6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235) 10.42 (.410)
1.02 (.040) 9.40 (.370) LEA D AS SIG NME NT S
1.64 (.025) 1 2 3
1 - G AT E
0.51 (.020) 2 - DRA IN
-B - MIN. 3 - S OUR CE
1.52 (.060) 4 - DRA IN
1.15 (.045)
0.89 (.035)
3X
0.64 (.025) 0.58 (.023)
1.14 (.045) 0.46 (.018)
2X 0.25 ( .010) M A M B
0.76 (.030)

2.28 (.090) NOT ES:

1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982.
4.57 (.180) 2 CO NTRO LLING DIMENS ION : INCH.
3 CO NFO RMS T O JEDE C O UTLINE TO -252AA .
4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP ,
SO LDER DIP MA X. +0.16 (.006).

Part Marking Information

TO-252AA (D-Pak)

E X A M P LE : T H IS IS A N IR F R 120
W IT H A S S E MB L Y A
LOT C OD E 9U 1P IN T E R N A T IO N A L
F IR S T P O R T ION
R E CT IF IE R
IR F R OF P A R T N U MB E R
LO G O
12 0
9U 1P
A S S E MB L Y S E C O N D P O R T ION
L O T C OD E OF PART NUMBER
 IRFR/U9024N

Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)

6.73 (.265) 2.38 (.094)

6.35 (.250) 2.19 (.086)
-A-
1.27 ( .050) 0.58 (.023)
5.46 (.215)
0.88 ( .035) 0.46 (.018)
5.21 (.205) LEAD AS SIG NMENT S
4 1 - G AT E
6.45 (.245) 2 - DRA IN
5.68 (.224) 3 - S OURCE
1.52 ( .060) 6.22 ( .245) 4 - DRA IN
1.15 ( .045) 5.97 ( .235)

1 2 3

-B - NOT ES :
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982.
2.28 (.090) 9.65 (.380) 2 CO NTRO LLIN G DIMENS ION : INCH.
1.91 (.075) 8.89 (.350) 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA .
4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP ,
SO LDER DIP MA X. +0.16 (.006).

1.14 (.045) 1.14 (.045)

3X 0.89 (.035)
0.76 (.030) 3X 0.89 (.035)
0.64 (.025)

0.25 (.010) M A M B 0.58 (.023)

2.28 (.090)
0.46 (.018)
2X

Part Marking Information

TO-251AA (I-Pak)

E X A M P LE : TH IS IS A N IR F U1 20
W IT H A S S E M B LY
LO T C O D E 9U 1P IN TE RN A T IO N A L
F IR S T P O RT IO N
R E C T IF IE R
IR F U O F P A R T N UM B E R
LO GO
120
9U 1P
A S S E M B LY S E C O N D P O R T ION
LO T C O D E OF PART NUMBER
IRFR/U9024N

Tape & Reel Information

TO-252AA

TR TRR TRL

16 .3 ( .64 1 ) 1 6 .3 ( .6 4 1 )
15 .7 ( .61 9 ) 1 5 .7 ( .6 1 9 )

1 2 .1 ( .4 76 ) 8 .1 ( .3 1 8 )
F E E D D IR E C TIO N F E E D D IR E C TIO N
1 1 .9 ( .4 69 ) 7 .9 ( .3 1 2 )

N O T ES :
1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 .

1 3 IN C H

16 m m
NO T ES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .

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http://www.irf.com/ Data and specifications subject to change without notice. 6/97