lassification op conductors Semiconductors \Tosulctors: Matecic \| conductors: Darya electrical & Ji) Valence and | Ji) Bxamples- Copper st a putes: Sibuer, CFC: See | | Sericandurctorr a f Ti) AE Mowmed tempemature few reo Clectrons _enis#s TT But ad absolute zon thee ave perfect “insulator, | Ji)? smau gor, belween valence 4 conduction band [ TTheicienge enerquy gap” depends 00 _ femperaieTe» AR) Example: —_si}feon’ (iu) . 4 Gersmmanium €482)% Tosulators © f { li) No» free "elect for Conduction. | 4 Ay Nemy hi omperrtukune ov Under high I “Nolage also these _ mederialy ono conduct tort Vor)” largo’ gap beHween Mlalence ‘a band. | il Se iosti: os Hlica , Papers, Glass = eres | 4 ee —| Condseion | —: : which [Forbidden band (gar): the erty qe Bee. | 38 Presenr Separting the conductlon band/) 2% “= Gnd the valene band aaulied forbidden “han ye * lruciuce of __Serniconductar Material Valente shel) \ OR Valente e7 in > Silicon Outer most shed Germanium According to impumty Preven} | material they ED SEMICON clue toy ase ~ classitied ai inkinsic ¢ Cxtyinsic Semiconductor. 1) _|-Entinsie Semiconductor: i) Purest —foarm of semiconductor _ intrinsic semiconductom, 9 : The impurity coptent in. intrinsic _Semigonductor Newt Nery Smail C Conduativity, is 00% good’) Ll ee Wi) Abe absolie _Zevo itempercature it behaves a \ ja perfect insulaor. e303 feoPealledt( aclassmate Extrinsic Somiconduetors: ss 8 creas Mall — amount of impurity ig added 4o __ Matenjas it becomes extrinsic semiconductors hota a ; 9 added impurity _ ally . of Material of _ add ing impunity “is called ws ge Matenial Wed tor do pring i@ called Semiconductor material is ailled a extrinsic ‘| Doped “Semieonductos. 4 Since dur dopping increased eee) sof madera) iss aed fot 4 of» Nao electronic devicen’ “such at Mvaieidter Sad ng oi | Seer Se the pentavasent impurities added 4° pure semicondue he Semiconductor becomes _ N= type Semiconduetorr.( Dono») hen trivalenP impurity siadded oto Pures semicondach. gemiconductor becomes P-type. Semiconductar’ Type Semiconduator : | 4 atin as vadditien of _Pentavellent impuriHes Such cy mimony, argenic. 0% PI sphorour contributes free ectvons, greatly © increas: 4 Conductivity of the trinsic __ Semiconductor i‘ Ie Extra electrons a Fi a _ Silicon. Atom, + * > Arsene _C#0M C Penta) SO) cana OG 1 4 Pe impurity) ii) From above diagram, Arsenio atom 56) added to Pure) gemiccndeator materia) BY i) Ous of 5 clectrons 4 electrons of "AS! etter vp forms a Covalent _ bond) with One declan is exiva which _ conduction s ; THis | Cktva Clectron | ean easily» go. into 1CondiceH, ped) band swhich ¢owtd) bow free.) fli ie) fay Ty AN type — semiconductor electrons) are iajoriny ee | Comes 9 4 holes’ Pare: i minonitys carries: t Conduction in N-type mateniods 5 Wit 2 Ase i > HMinorihy Cariog? i wate i i | Silicon Ators S Galliure Atom CAival Gallium atom is Contains 3 Neilence electran which = covalen? bonds | with neigh bouring. silicon tb bond remains _in¢omplele which is Se hole is “cteated: C Vacant “place ef eweaies hole) -® type semiconductor holes ave majority | & minority? camiets are Klectmons,, in | Paype material: 3 y. @ Cn oT | | nf e Be q re O e—> Peo op? jy. 10 2n8) ges attracted: yt0 es Which, .cere » mMiNoKY sy Game + : 1 bareg com, 6, p+ Minosity Dien holes Cin oN type) Caniex electson Cin P type) Ting forward biow : cae GY Write seat Movement OF +! rele Letioi ss|) Detine Reverse oi Width of Depletion region So Boe inf No SCORE a eg eae ; th! diode due 40 _pminany camens Reverse saturation Current - LUA, temp see i I CRevewse _teistance _is_ Maximum ) |6) Breakclowo Noltage Bifchowsteayes of Diode F.. Se ee a4 Break don. pbgi hon Omi yo wisd: Zoortey>. x BO Be 5 AsiHieFo: eR O RE 202,505 Y, EERE MUR REM ORM ihe | ye classmate, Applications = ae 3 © Rectitien @ clipping 4 claroping _Ghreuits ; @Novtage roulfiplieng. Zener Diode. lar is heavily loped Pen j? ay Circuit. Syrobo! which is al wed st» bias Smede Ay 1 k reverse Be (ConsTRUCTION: ZeNer eect Pdype wi type re a Mere _N-side Conduction band appears _oppesite 4o P-side of valenco band. Ti) So thene is fairs Humber of — emphy gicdes in the _nside_conduetion band 4 many’ tilled States net Pside valeme gand J i iid basen + Potential ois - Smal) D _between +wo bunds is Namow Hence 4unn ot deatrons fom pode Valen band te) _n side conduction hand oceung tw) this + Cor uly) As Aunneling odie Smalley the reverse -bient' i) At Paxkewlar — vA e | Cues increases 08 zener breakdown Neltage HN increased. __ sharp. reverts @ 6 Oe sehen _Noltage is called “ey sha oly this _ distance d _peotia_malier_ on — —reverse biased Vo ae dee en diode. » the iaNolonovEs Lote is _ Cerrrent Tp. the Eealel par roe damp ew | Minority. camer” OCUTS Jeument Very slo ‘Nalue ad gol.|@ hove this value, Teverse _bicsed Sneteaso 10 the _cumen} to wee BCU men: Inevease: “rapidly dé Var ae increase ahaade ie 2 @ cuwen: timing _tesisior is Yequired to _Contm) Tevewse ~ diode. [Tie breakdowns 0 O. Zener breakdown |@ Avalanche breakdow a. & i) Zener breakdown ocewres fox less. than Sv iiyWhen reverse voltage (Sv ov tess) 0 applied to a Zzenew ode it comte a Very intense electri fied = 40 sappear Ree (0 Unarrew depletion region. ia ii)) The _cleatyic field Y errogg the ie ea Sayers is ver ‘high 4 pully clerose the s J dlopletion i —_OlecimAs ous of theiy Valance ordi}. liv) The tnentjon of drea Cecwng 1m this Wort" iS seabed zener —_odtent 1) 4 lang? —numbev of free cleghpny gill saa Ig 0 gee ema the 1) Cerrar Connected we Ictemperaturk. in proe7 Bivalanche : ae ee igi | pt | i forces _the minonivee ate ue GORY a Timor: quickhy Thess tol basi cane be cigallie# | With the tome of em deif tn ee! | valance _ gleaiamy ¢ _ proch Suet Ag free olodhmnis - Obie oa iv Pa “carers alte pi i eine the a calle in produce — ~ additional _cunbers 4 Mineo ns. 2 nett si ie aa __ POLK i ile aoe hy ec py 6 alee = prea oun. is ha oeight _Emibiing Dede: _k Symbe! Te 2 ok Cothode di Cirewit role), % ag ee Q Ole % XS pe Light Emitting. keaiodie (AS Oy es gourte “Semiconductor igh ed in forward biased _ mode a (nine ener Tevet’)= BIER Eleclmn -hale Ge i\ feat SS) i) Since photo -dicde is Tevense bias” Aepienea geree ig wide ie . \ i) When Photons incident an the depteHon aren will impart _theiy __¢ do the fone preent Abeve _and eaters "oe edielel Pais . ii) Number of Aleetron hole Pairs will be dependent : | Gy the intensity ol __Light.. a These _Clectrons “and holes will be dependent ao the | dpbensity— Hight attracted) towards the _Pasitive a negative terminals —_ rwespechively. Y) with 2 Jn + intensify photo cement Lncreases wx pholo-cument _is canes tothe ight ds ity. : 0As photo Ca detector [Phate- oliode _chawachenisHesphoocanment tp er Cup di: 2 iba K cy a Se ; A - = ae 7 1 ; fee tn ) +, ee sles es Photo: ciode __ Applications: ES Sp. diber = optic: receiver 2) tat I@ Asa pte couplers or wo csisd ti |@-Tn. cameras © for sensing dbo } h04 aheaurot silavibvsdent Paiapetar 4% , Jight _tblensitype in toansparent matersa) 29 tan pase thr! the patkag & free nats a holes, spur bore pe hy is obtained “which = mecrangs. ae | of Boicrodi meres if t J klhen lights’ fats on 4. “Pon junction i a sHaker:-Place & reverse sche iee current is snore olclassmate. USER Date a ‘| Phatovaltaic — Coll “Cola fell)’. CSslan energy iMt> on, |____ the _Phatevaltaic _tell__genewater__Nolierte ‘prropostional” othe intensity of _sncident — Lah oe ae Cadmium oxide eer = - eee le also Nous pn jo —selepiune — toyer i iy |zme plate pee) i aio a - T+ consists of a base plate fade) Prom) itn 01 Stee), whieh acts a8 9 positive dectmde Selenium ayor is placed above the base pai Ct is sendiive +0 Light) ms Above this layer _ConWucting cadmium orice 4 On Jaye is depostted. ‘this. «ig transparend 4 | 4 so the photons _incideh} Gn tho cell -wi! teach the _sdlenium. Jur. 4 absorb by Cadmi Qlecty- | a So. en e Pair _i¢ pencated Z a Number of ae hele pair generated! ronal to Ancidend Ligh. =) |picltcise N___ clowns LS ‘ 1 when Siiobi hiigica 9 chareye regior : pal Ba in 5 Oi Spaue hare 1 ‘tes ii) The apically enercut i: aa -|_therrge _seqion by as ni holes flow to constitute Buses pony ole holes are ieee : electron-hole Pair swept. Guiside the space day oloctic fied. -separaded J current. ‘This. photo ceeare Procuces q dead resistance Re gs ees = Tica a Plicatioo: Calculator pSpecitications of Solan Ce pai) Eftici Bere el defined as the electric Power ouput divided by the» dncident _ Ligh were Power 2) |opeo circuit Voltage: (Voc) * The, voltage hetween the Herminals @%@ connedad te+reach when Ne Curren’ deus % 3)| Show) circuit current Cts)! The cuient when the Aerminals: ave connected to each ethene _ vo latse inctbae with” increase’ tn) Lis ighl Slaten site Seba ae D4 ath { { ir