MULTIMEDIA UNIVERSITY OF KENYA

FACULTY OF SCIENCE AND TECHNOLOGY

UNIVERSITY EXAMINATIONS

FIRST YEAR SECOND SEMESTER EXAMINATION FOR THE DEGREE OF

BSE & BCS

CCS: 2122: ELECTRONICS

DATE: TIME: 2 HOURS

INSTRUCTIONS:
ANSWER YOUR QUESTIONS IN ANSWER BOOKLET PROVIDED.
ANSWER QUESTION ONE [COMPULSORY] AND ANY OTHER TWO QUESTIONS.

PHYSICAL CONSTANTS.

Electronic charge, e = 1.6 x 10-19c

Mass of electron’s me = 9.11 x 10-31 kg
Planck’s constant, h=6.625 x 10-34 Js
Permittivity of free space, ε0 = 8.854 x 10-12Fm-1
Permeability of free space, μ0 = 4π x 10-7 Hm-1
Electron mobility, Me = 0,38 m2r-1s-1 (intrinsic Ge)
Hole mobility, Mn = 0.18m2r-1s-1 (intrinsic Ge)
Boltzmann’s constant, KB = 1.38x10-23 JK-1
Rydberg constant, RH = 1.1 x 107m-1
Electron Volt (ev) = 1.6x10-19J
Z value of Hydrogen atom = 1
Intrinsic carrier density for Germanium ni = 2.5x1019 m-3
Intrinsic carrier density for silicon ni = 2.5x1019 m-3
Density of Germanium atom ρ = 4.2x1028 atoms / m3
QUESTION ONE (THIRTY MARKS)

a) i) Explain why the Rutherford’s planetary model of the atom failed experimental
tests. (2 marks)
ii) Calculate the velocity of electrons revolving in the innermost orbit of the
Hydrogen atom. (3 marks)
b) i) Write down any four uses of the orbital quantum number, L (2 marks)
ii) What do you understand by the term valence electrons? (1 mark)
iii) Explain the meaning of the term “forbidden energy gap”. (1 mark)
iv) Differentiate between donor and acceptor impunities (1 mark)
c) i) Using the band theory of solids, distinguish between electric insulators,
semiconductors and conductors. (3 marks)
ii) State why the base of a PnP transistor must be made very thin while the emitter
should be highly doped (2 marks)
d) i) Define the term “biasing” as used in physical electronics. (1 mark)
ii) Explain the meaning of an extrinsic semiconductor and give the different types
of extrinsic semiconductors. (1 mark)
iii) Define the terms Alpha ( α ) and Beta ( β ) as used in Bipolar junction
transistors and deduce an expression relating them. (3 marks)
e) i) Explain how a device such as a bipolar junction transistor amplifier is said to
be operating under small signal conditions. (2 marks)
ii) State the major difference between a Bipolar Junction transistor (BJT) and a
junction field effect transistor (JFET) (3 marks)
iii) Explain what is meant by input and output characteristics curves of a common
–emitter static configuration (2 marks)
f) i) Name the three primary currents in a properly biased transistor and write down
an expression relating them. (2 marks)
ii) Using the Fermi-Dirac distribution function, show that for E<EF, the
probability of finding an electron below the Fermi-level is one. (1 mark)
iii) Define the term “doping” as it applies to semi- conductors (1 mark)

QUESTION TWO (TWENTY MARKS)

a) Calculate the values of the energies, in electron-volts (eV), for the first four orbits of an
hydrogen atom. (5 marks)
b) Briefly explain what happens when phosphorous atoms are introduced into silicon
atom. (4 marks)
c) Using the band theory, explain how the donor and acceptor impurities affect the
intrinsic semiconductors. (5 marks)
d) Draw the energy level diagram of a PN-function at equilibrium and explain the changes
which occurs when the junction is formed interms of Fermi-levels. (4 marks)
e) Write down any four advantages of transistors over vacuum tubes. (2 marks)
QUESTION THREE (TWENTY MARKS)

a) Applying the Fermi-Dirac statistics for the distribution of electrons into the available
energy states, show that for an intrinsic semiconductor, the Fermi-level lies midway
between the valence band and the conduction band. (6 marks)
b) i) Deduce an expression for the electrical conductivity of an intrinsic
semiconductor. (5 marks)
ii) Calculate the conductivity of an intrinsic Germanium given that the electron
and hole densities each to be equal to 2.5 x 1019 per meter cubed. (3 marks)
c) A rectangular specimen of an intrinsic semiconductor (Germanium) was made with the
following dimensions: length 25 mm, width 4mm and thickness 1.5 mm. assuming a
potential difference of 10v is applied longitudinally to the specimen at room
temperature, calculate
i) the electron and hole drift velocities. (3 marks)
ii) total current flowing. (3 marks)

QUESTION FOUR (TWENTY MARKS)

a) Write down the expressions for the depletion width and the Barrier voltage explaining
the meaning of each of the terms need. (3 marks)
17 -3 15 -3
b) An abrupt silicon PN junction has Na = 10 cm and Nd = 10 cm Taking ni = 2.1 x
1013 cm-3 .
i) Calculate the Fermi-Level positions at 300K in the P- and N-
regions. (3marks)
ii) Draw an energy band diagram for the junction and determine the barrier
voltage from it. (3marks)
iii) Calculate the barrier voltage from the barrier voltage equation and comment on the
results obtained in (ii) and (iii). (2marks)
iv) Calculate the depletion width of the layer assuming the relative permittivity of
silicon 8. (2marks)
c) Deduce an expression for Boltzmann-Diode equation. (8marks)
QUESTION FIVE (TWENTY MARKS)

a) Draw a common base test circuit used to determine the static characteristics of a PNP
transistor connected in the common base (CB) configuration. Explain how the input
characteristics are obtained. (6marks)
b) Applying the common base formulas to the circuit below, find the value of RE which will
cause VBC= 10v. (4 marks)

VEE = 20v

VBE VBC =10v

IB

c) Explain the meaning of FET as used in transistor hence give the two types of FETs. Draw
the FET family tree. (4 marks)
d) I)Making use of appropriate diagrams describe the construction and the operation of an N-
channel field effect transistor. (3 marks)

ii)Sketch a well labeled JFET drain characteristics and explain what the main features present.
(3 marks)

*END*