Advancements in Photodetectors:

Illuminating the Future

Mentor: Parth Shah

PDPIAS, CHARUSAT
By: Bhakti Rajai
Department of Physics and Electronics
St. Xavier’s College
 Index:

● Introduction
● Research Objectives
● Types of photodetectors
● Methodology
● Experimental Setup
● Scanning Electron Microscopy
● Characterization
● Future Implications
● References
Introduction:.
● Photodetectors serve as vital components in optoelectronic devices, converting light
signals into electrical signals.
● Research efforts focus on enhancing multispectral photodetectors through novel
materials, optimized structures, and innovative mechanisms.
● High-performance photodetectors find diverse applications in industries and defense,
including environmental monitoring, video imaging, and optical communication.
● Recent research emphasizes flexible electronic devices, such as displays, wearables, and
electronic skins, as prominent areas of study.
Research Objective:

● Develop a novel photodetector with enhanced responsiveness in

both the infrared (IR) to ultraviolet (UV) regions.
● Investigate innovative materials and device structures to optimize
performance across the IR to UV spectrum.
● Evaluate the sensitivity, responsivity, and spectral range of the
developed photodetector to ensure superior performance in IR to
UV light detection.
 Types of photodetectors:
Photoconductor
● Utilizes semiconductor film and two
electrodes.
● Semiconductor layer becomes
conductive with external voltage.
● Generates more electron-hole pairs
under light, enhancing conductivity.
● Results in larger photocurrent than
dark current for photodetection.
Photodiode Phototransistor
● Lateral structure with active, dielectric
● Vertical device with functional layers
layers, and three electrodes.
and electrodes.
● Produces photogenerated carriers for
● Operates like solar cells, exploiting
photocurrent.
photovoltaic effect.
● Source-drain voltage drives
● Absorbs photons to create excitons,
conductive channel.
producing photocurrent.
● Gate voltage enhances carrier
● Operates under reverse bias voltage
generation for signal amplification
for high on/off ratio and fast response
 Methodology:
Various ways to fabricate photodetector film:

Handprint Sputtering Deposition Drop cast

 Experimental Setup(Handprint): b) Deposition of Semiconductor Film:
a) Masking and Substrate Preparation

Pour a small amount of In Rub the powder with a

Define a 1 x 1 cm window
on the paper substrate and
mask the remaining area.
Enhance conductivity of paper
doped SnSe powder onto the hand to achieve a nearly
by rubbing with a pencil to
paper within the defined uniform film on the
create a conducting base.
window substrate.

d) Characterization: c) Electrode Formation and thermal Treatment:

Remove the masking to expose the fabricated
Study photodetection properties by measuring
semiconductor film and Create metal contacts
current-voltage (I-V) and current-time (I-t)
using conducting silver paste at two points on
characteristics using an electrochemical
the film.
workstation.
Place the fabricated device in a heating oven at
70°C overnight for stabilization.
Experimental Setup(Dropcast):
Few pictures:
Dropcasting Process:
● Pipette 5 μL of SnSe solution onto clean substrate.
● Place substrate on magnetic stirrer for even spreading by centripetal force.
● Adjust solution volume for uniform coverage.
Drying Process:
● Heat substrate on magnetic stirrer until solvent evaporates.
● Monitor to prevent overheating and ensure uniform film.
Electrode Connection: SONICATOR
● Connect copper wires to dried SnSe film using silver plates or adhesive.
● Ensure secure connections for reliable measurements.
Annealing:
● Anneal device at 70°C for 24 hours to enhance crystallinity.
Finalization:
● Cool device to room temperature post-annealing.
● Perform additional characterization for photodetection.
Caution:
● Handle SnSe solution and devices with care to avoid hazards. MAGNETIC STIRRER
Scanning Electron Microscopy:

SnSe powder
Instrumentation

● In the field of materials science, the examination of material morphology, including surface topography, grain defect analysis,
film quality assessment, investigation of structure-property relationships, and implementation of quality control protocols, can
be effectively conducted utilizing scanning electron microscopy (SEM).
Characterization by:
1.time-dependent
photocurrent
We can analyse photodetector's
transient behavior, including its rise
time, fall time, recovery time, and
overall speed of response to light
signals.
3. UV Absorption
We can determine bandgap,
characterize optical properties,
assess film thickness, uniformity,
analyse defects, understand
material behaviour.
2. X-Ray Diffractometer
We can analyse crystal structure
i.e. lattice parameters and
orientation of the film.
4. I-V characteristics
Through this we can assess
Electrical Conductivity, identify
carrier transport mechanisms,
evaluate device performance
and characterize electrical
properties for its applications.
Future Implications:

Material Optimization: Investigate alternative materials and doping methods to enhance

sensitivity and broaden spectral range.
Nanostructure Integration: Incorporate nanostructures for improved light trapping and
reduced recombination losses.
Characterization Advances: Employ advanced spectroscopy and microscopy techniques for
comprehensive understanding of device operation.
Benchmarking and Validation: Conduct rigorous comparisons with commercial
photodetectors to demonstrate superiority
Scalability:Assess the feasibility of scaling up production for potential industrial applications
requiring improved IR UV detection capabilities.
References:
a) Scalable and cost-effective synthesis of flexible paper-based Indium doped SnS photodetector in
the VIS-NIR range September 2023 Surfaces and Interfaces 42:103408
DOI:10.1016/j.surfin.2023.103408
b) Recent Advances in Materials, Structures, and Applications of Flexible Photodetectors
Genjie Yang, Jiyu Li, Mengge Wu, Xinge Yu, Junsheng Yu First published: 26 July 2023
https://doi.org/10.1002/aelm.202300340
c) JULY 25 2018 Enhanced photoresponse of graphene oxide functionalised SnSe films Hao
Yao; Siwei Luo; Georg S. Duesberg; Xiang Qi; Donglin Lu; Chao Yue; Jianxin Zhong AIP
Advances 8, 075123 (2018) https://doi.org/10.1063/1.5031066
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