CHAPTER 4 THEORY ON THE MODEL

A schematic structure of the OPFET device is shown in the Figure. The transparent gate is made of (Ti n type SiC) material to form a Schottky rectifying contact with proper antireflection coating and all optical and electrical parameters of the model are assumed to be the ideal case.

FIGURE: Cross Sectional view of OPFET Under optically illuminated condition a one dimensional Poissons equation can be expressed in the following form [19]:
( )

, (

(1)

The photo generated carrier at the steady state derived by the following equation [20]: ( ) (2)

Considering impurity diffusion due to annealing, the impurity distribution can be represented by the symmetric Gaussian distribution as follows [18]:

( where

( ((

) (

)) )

(3)

, change in the junction depth due to post annealing and is estimated from the implanted

profile, where the value of k lies between 0 and 1. Q = ion dose, implant range parameter, = straggle parameter, D = diffusion coefficient, t = diffusion time (annealing time). and NA = substrate concentration. The electric field is determined by integrating equation (1) using the appropriate boundary condition for the electric field at the edge of the depletion width [19].
( )

. /[ (

( )+

)]

) (4)

The channel potential at any point between source and drain is obtained by the second integration of the equation (4) as follows: ( )
( )

. /( [ { ),
( (

)[
)

( } )

)
) )

( }]

)] ( )

( (

) )+ (5)

( (

The above channel potential can be substituted using the boundary condition for surface potential [6], as follows. ( . /( { where: VGS = gate source voltage B = Schottky barrier height (Ti n-type SiC ~ 1.01 eV) = depth of the Fermi level below the conduction band = permittivity of 4H-SiC XDG = distance from surface to edge of the gate depletion region in the channel. THRESHOLD VOLTAGE Using equation (6) with proper boundary conditions, the threshold voltage is obtained in a similar manner as in [24] and is given by: (
. ( ( ) )/ ( (

) )[ (
( )

)]

{ (

( (

} (6)

) )

}]

) (

),

)(

)(

)]

( .

),

. //(

/ ) }]

[ [

{ {

. .

/ . / .

/( /(

)} )}] (7)

/{

/ .

The threshold voltage for dark and illumination condition is obtained using the above equation and is valid for enhancement mode and depletion FET. The average channel concentration ND obtained from impurity flux density Q and substrate concentration NA are important fabrication parameters to select the threshold voltage for enhancement and depletion OPFET devices.

The photo induced voltage Vop is expressed as [], [14] . / . / (8)

where k is Boltzmanns constant, T is the temperature in degrees Kelvin, and q is the electronic charge. The variable p is the equilibrium minority carrier concentration in the active layer. (9) where ni is the intrinsic carrier concentration, and n is the carrier concentration (and is the same as ND ) ( ) (10)

I-V CHARACTERISTICS The drain source current is determined by integrating the channel charge between the source and the drain [24] as: ( ) (11)

where the channel charge Qn is obtained as: , ( ) (12)

Using gradual channel approximation, the I-V characteristics are evaluated by deriving the following equation [18]: * )1 . / . [ ( / [ ( ) . / 0. /( ( )] + )1 . / 0. )] (13) /(

Where

/ ,