|HAI LALA AT TATA TAI MUUTTUAUS009831310B2

(12) United States Patent (10 ) Patent No.: US 9 ,831,310 B2

Kotani et al. (45) Date of Patent: Nov . 28 , 2017
(54 ) COMPOUND SEMICONDUCTOR DEVICE , (58 ) Field of Classification Search
METHOD FOR PRODUCING THE SAME, CPC .................. HOLL 21/02304; HO1L 21/02436
POWER -SUPPLY UNIT , AND USPC .... 257 / 190
HIGH - FREQUENCY AMPLIFIER See application file for complete search history .
( 71) Applicant: FUJITSU LIMITED , Kawasaki-shi, (56 ) References Cited
Kanagawa (JP )
(72 ) Inventors: Junji Kotani, Isehara (JP ); Norikazu
U . S. PATENT DOCUMENTS
Nakamura , Sagamihara (JP ) 7 ,485 ,512 B2 * 2 / 2009 Harris et al. .... 438 / 167
8 ,212 ,288 B2 * 7/ 2012 Komiyama et al. .......... 257/ 190
(73 ) Assignee : FUJITSU LIMITED , Kawasaki (JP ) (Continued )
( * ) Notice : Subject to any disclaimer, the term of this FOREIGN PATENT DOCUMENTS
patent is extended or adjusted under 35
U .S .C . 154 (b ) by 0 days . CN 102386221 A 3/ 2012
103367421 A 10 /2013
(21) Appl. No.: 13/900 ,617 (Continued )
( 22 ) Filed : May 23, 2013 OTHER PUBLICATIONS
(65) Prior Publication Data Poblenz et al., “ Effect of carbon doping on buffer leakage in
US 2014 /0015608 A1 Jan . 16 , 2014 AlGaN /GaN high electron mobility transistors”, Journal of Vacuum
Science and Technology B 22 (2004 ) pp . 1145 - 1149. *
(30 ) Foreign Application Priority Data (Continued )
Jul. 10, 2012 (JP ) ...... . ............ 2012 - 155083 Primary Examiner — Jay C Kim
(74 ) Attorney, Agent, or Firm — Kratz, Quintos &
(51) Int . Cl. Hanson , LLP
HOIL 21/02 ( 2006 . 01)
HOIL 29 /20 (2006 . 01) (57 ) ABSTRACT
(Continued ) A compound semiconductor device includes: a compound
(52 ) CPC
U .S. CI....... HOIL 29 /2003 ( 2013 .01) ; HOIL 21/0254
semiconductor multilayer structure including a first buffer
layer composed of AIN ; and a second buffer layer composed
( 2013 .01); HOIL 21 /0262 (2013.01); HOIL of AlGaN and formed above the first buffer layer, wherein
21/02458 ( 2013 .01) ; HOIL 21/ 02505 the second buffer layer contains carbon , and wherein the
( 2013 .01); HOIL 21/02579 ( 2013 .01); HOIL concentration of carbon in the second buffer layer increases
29 / 1075 ( 2013 .01 ); HOIL 29/ 36 ( 2013 .01) ; with increasing distance from a lower surface of the second
HOIL 29/66462 (2013 .01) ; HOIL 29 / 7787 buffer layer toward an upper surface of the second buffer
( 2013 .01) ; HO2M 3 /335 ( 2013 .01) ; HO3F layer.
1/ 3247 ( 2013.01); HO3F 3/ 16 ( 2013.01);
HO2M 3/ 28 (2013 .01) 11 Claims, 9 Drawing Sheets

ZAIGAN
AIGAN ZIDA 5
2521010
2DEG +

VI ATGAN (AL LOW , C. HIGHYTTA 30

AIGAN (AI: MEDIUM , C: MEDIUM ),
AIGN (AI: HIGH , C : LOW ).
AIN

D an
-
 US 9,831 ,310 B2
Page 2

(51) Int. Ci. FOREIGN PATENT DOCUMENTS

HO3F 3 / 16 ( 2006 .01 )
HO2M 3 /335 ( 2006 . 01) 2007-251144 AL 9 / 2007
HOIL 29 / 36 ( 2006 .01 ) 2010 -239034 A 10 /2010
HOIL 29/ 66 ( 2006 .01 ) &
2011 - 082494 A 4 /2011
2012 - 9630 A11 /2012
HOIL 29 /778 (2006 .01) 2012 -015306 A 1 /2012
HOIL 29 / 10 ( 2006 .01) 2012 -033575 A 2 / 2012
HO3F 1 /32 ( 2006 . 01) 2012 - 033703 A 2 / 2012
HO2M 3 /28 ( 2006 .01) WO 2012 /066701 * 5 /2012 ........... HOIL 21/ 338
( 56 ) References Cited OTHER PUBLICATIONS
U .S . PATENT DOCUMENTS Kaun et al.,“ Molecular beam epitaxy for high -performance Ga- face
8 ,450 ,782 B2 * 5/ 2013 Sato ................... HO1L 29 /7787 GaN electron devices” , Semiconductor Science and Technology 28
257 / 288 ( 2013 ) 074001.*
2006 /0281238 A1 12 / 2006 Harris et al. Selvaraj et al., “ Effect ofGaN Buffer Layer Growth Pressure on the
2010 /0244101 A1 9 /2010 Kokawa Device Characteristics of AlGaN /GaN High - Electron -Mobility
2011 /0001127 A1 * 1/ 2011 Sakamoto ... ...... HO1L 21/02381 Transistors on Si” , Japanese Journal of Applied Physics 48 (2009 )
257/ 22 121002.*
2011/0062556 AL 3 /2011 Komiyama et al. Office Action of corresponding Japanese Patent Application No.
2011/0073911 A1 * 3 /2011 Sato ...................... HO1L 29 / 107
257 / 194 2012 - 155083 dated Jan . 19 , 2016 with Partial Translation .
2012 /0025202 A1 * 2/ 2012 Makabe ............ HO1L 21/ 02381 Office Action of corresponding Chinese Patent Application No .
257/ 76 201310209732.7 dated Sep . 14 , 2015 with full translation .
2012 /0025205 AL 2/ 2012 Nakata et al. Taiwanese Office Action dated Oct. 24 , 2016 of corresponding
2012 / 0049180 A1 3 / 2012 Yamada Taiwanese Patent Application No. 102120078 , with translation .
2012 /0119219 A1 * 5 / 2012 Takado et al . .............. 257 / 76 Office Action of corresponding Japanese Patent Application No.
2013 /0020581 A1 * 1/ 2013 Teraguchi ......... HO1L 21/02381 2012 - 155083 dated Jun . 7 , 2016 , with partial translation .
257/76 Japanese Patent Application No . 2016 - 174655 : Notifications of
2013 / 0240901 A1 * 9 / 2013 Kohda et al. , 257 / 76 Reasons for Refusal dated May 23 , 2017 .
2013 /0248872 A1 9 / 2013 Nakamura et al.
2014 /0239308 A1 * 8 /2014 Hallin . .............. HO1L 21/ 02458
257 / 76 * cited by examiner
atent Nov . 28 , 2017 Sheet 1 of 9 US 9 ,831,310 B2

FIG . 1A
??????? AIN

zozozou
FIG . 1B DKAIGANAIGAN (AI: LOW , C: HIGH)
(AL: MEDIUM , C : MEDIUM
DIZAIGAN (AI:HIGHAINY, C. LOWZZZZZZ
AINA
FIG . 1C GaN

B A IGAN (AI:LOW , C:HIGH) / 3673

AIGAN (AI: MEDIUM , C : MEDIUM )
AIGAN (AL: HIGH , C : LO
SAINS
AIN
NINT ang

FIG. 1D BELLEZZABIZITZA
2DEG
AIGAN
.. .

GAN
AIGAN ( AL: LOW
LOW ,, CC : HIGH
HIGH ) LLA
AIGAN (AI: MEDIUM , C : MEDIUM )
ZAIGAN (AL:HIGH, C. LOWZIA
AIN
U . S . Patent Nov. 28 , 2017 Sheet 2 of 9 US 9,831,310 B2

FIG . 2A

AIGAN 25 10
2DEG
GaN
AIGIN ( ?I: LOW , C: HIGH
AIGAN (AI: MEDIUM , C : MEDIUM )
ATGAN TAI HIGH ,CLOWINA 3
VAINII Jus
AIN .

FIG . 2B
7

L LAGEN - 5 - 10
2DEGA
2DEG
GaN ?

AIGAN (AL: LOW , C HIGHY ? ?

KAIGAN(AI:MEDIUM,C.MEDIUM
AIGAN AI: MEDIUM , C : MEDIUM ) .
AIGAN (AI: HIGH , C : LOV
AIN
?

?
U . S . Patent Nov. 28 , 2017 Sheet 3 of 9 US 9 ,831,310 B2

ENTRAION
)
cm3
/
V
1x1020
1x1019
1x1018
1x1017
-

- -

- -

- -

- -

- -

- -

- -

- -

- -

- -

- -

- -

-
-

- -

- -

- -

-
-

3
.
FIG
- -

- -

- -

- -

- -

- -

- -

AIGAN GaNCHAN EL 2GaN

Alo -5GaN
Alo

.
5
U . S . Patent Nov. 28 , 2017 Sheet 4 of 9 US 9 ,831 ,310 B2

FIG . 4

120070
1200

]
sec
[
TWIST 800

HIGHER C CONCENTRATION
IN LAYER

1000 2000 3000 4000 5000

V /III RATIO DURING AIN GROWTH
 atent Nov . 28 , 2017 Sheet 5 of 9 US 9, 831,310 B2

FIG . 5A AIGAN 5 = 10
2DEGAB4444AIGAN
GaN
44474
AIGAN ( AI: LOW , C : HIGH )
AIGAN (AL:MEDIUM , C :MEDIUM )
AIGAN (AI: HIGH , C : LOW ).
AIN

FIG.58
FIG . 5B
2DEG
I
AIGAN

AIGAN (AI: LOW , C : HIGH ),

25 - 10
)

AIGAN ( AI: MEDIUM , C : MEDIUM ).

AIGAN (AI: HIGH , C : LOW ).
MITAINAIN II 2
)

? 12
FIG
FIG .. 5C
500 om te 5 10
2DEG ? KLLLLL / AIGON ZA 2
or 10
AIGAN
GaN

Wat
AIGAN (AI: LOW , C ; HIGH )
AIGAN ( AI: MEDIUM , C : MEDIUM
AIGAN ( AI: HIGH , C : LOW

A LAIN LOW
AIN
atent Nov . 28 , 2017 Sheet 6 of 9 US 9 ,831,310 B2

FIG . 6A
222222
AIGAN
FIG . 6B ( AL DECREASE TOWARD TOP \ / # 21
IC INCREASE TOWARD TOP

BA AIN

FIG . 6C GaN
AIGN
(ALDECREASE TOWARD TOP
INCREASE TOWARD TOI
21
AIN
WT
FIG . 6D AIGAN
2DEG GaN 7- 4
AÍGAN
(ALDECREASE TOWARD TOP 21
IC INCREASE TOWARD TOP
AIN
WY
U . S . Patent Nov. 28 , 2017 Sheet 7 of 9 US 9 ,831,310 B2

FIG . 7A 7

AIGAN A 5- 20
2DEG
Gan
/ AIGAN
(ALDECREASE TOWARD TOP 21
IC INCREASE TOWARD TOP /
AIN VO

FIG . 7B

AW 20
2DEGA ZAIGEN
Gan
ZUL
AlGaN
((AICINCREASE
DECREASE TOWARD
TOWARD TOP
TOPY1 / 21
AIN
 atent Nov . 28 , 2017 Sheet 8 of 9 US 9, 831,310 B2
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - * - - - 1

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HF
CSEIROCNDUAIRTY 32

37c
1

DITUL lllll
00000 EE
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FIG 36b -

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36a -

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U . S . Patent Nov. 28 , 2017 Sheet 9 of 9 US 9 ,831 ,310 B2

OUXOTPUT
43

9
.
FIG

42a

INPUT
PREDISTO N
DIG TAL CIRUIT al
 US 9 ,831,310 B2
COMPOUND SEMICONDUCTOR DEVICE , or a lower layer region of an electron transit layer. In this
METHOD FOR PRODUCING THE SAME , case , it is difficult to control the residual carrier concentra
POWER - SUPPLY UNIT, AND tion , so that it is very difficult to inhibit the occurrence of the
HIGH -FREQUENCY AMPLIFIER off - leakage current, thereby leading to a reduction in break
5 down voltage .
CROSS -REFERENCE TO RELATED
APPLICATIONS SUMMARY
This application is based upon and claims the benefit of According to an aspect of the invention , a compound
priority of the prior Japanese Patent Application No. 2012 - 10 semiconductor device includes: a compound semiconductor
155083 , filed on Jul. 10 , 2012 , the entire contents of which multilayer structure including a first buffer layer composed
are incorporated herein by reference . of AIN ; and a second buffer layer composed of AlGaN and
FIELD formed above the first buffer layer, wherein the second
15 buffer layer contains carbon , and wherein the concentration
The embodiments discussed herein are related to a com of carbon in the second buffer layer increases with increas
pound semiconductor device , a method for producing the ing distance from a lower surface of the second buffer layer
compound semiconductor device, a power -supply unit, and toward an upper surface of the second buffer layer.
a high -frequency amplifier. The object and advantages of the invention will be
20 realized and attained by means of the elements and combi
BACKGROUND nations particularly pointed out in the claims.
It is to be understood that both the foregoing general
Nitride semiconductors have properties , such as high description and the following detailed description are exem
saturation electron velocity and wide band gaps. Thus, plary and explanatory and are not restrictive of the inven
attempts have been made to use nitride semiconductors for 25 tion , as claimed .
high -power semiconductor devices with high -breakdown
voltages . For example, GaN , which is a nitride semiconduc BRIEF DESCRIPTION OF DRAWINGS
tor, has a band gap of 3 .4 eV, which is larger than the band
gap of Si ( 1 . 1 eV ) and the band gap of GaAs ( 1 . 4 eV ). FIGS. 1A to 1D are schematic cross - sectional views
Hence , GaN has a high breakdown field strength . Accord - 30 illustrating a method for producing an AlGaN /GaN HEMT
ingly , GaN is a highly promising material for high -power according to a first embodiment in order of steps ;
semiconductor devices, which operate at high voltages, used FIGS. 2A and 2B are schematic cross -sectional views
in power supplies. illustrating the method for producing the AlGaN /GaN
Many reports have been made of field - effect transistors , in HEMT according to the first embodiment in order of steps
particular, high electron mobility transistors (HEMTs) as 35 subsequent to FIG . 1D ;
semiconductor devices composed of nitride semiconductors. FIG . 3 is a characteristic diagram illustrating the C
For example , with respect to GaN -based HEMTs (GaN - concentration distribution of layers in the AlGaN /GaN
HEMTs ), AlGaN /GaN HEMTs including electron transit HEMT according to the first embodiment;
layers composed of GaN and electron supply layers com - FIG . 4 is a characteristic diagram illustrating the relation
posed ofAlGaN have been receiving attention. In an AlGaN / 40 ship between the V /III ratio during the growth of AIN
GaN HEMT, a difference in lattice constant between GaN serving as a first buffer layer and the twist value of a
and AIGN causes strain in AlGaN . The strain -induced compound semiconductor multilayer structure;
piezoelectric polarization and the spontaneous polarization FIGS . 5A to 5C are schematic cross - sectional views
of AlGaN results in a high - density two - dimensional electron illustrating main steps of a method for producing an AlGaN /
gas ( 2DEG ). Thus, AlGaN /GaN HEMTs are promising 45 GaN HEMT according to a modification of the first embodi
high - breakdown voltage devices usable for, for example , ment;
high - efficiency switch elements and electric vehicles . FIGS. 6A to 6D are schematic cross - sectional views
Japanese Laid -open Patent Publication Nos . 2012 - 9630 , illustrating a method for producing an AlGaN /GaN HEMT
2010 -239034, and 2007- 251144 are reference documents according to a second embodiment in order of steps ;
cited in this specification . 50 FIGS. 7A and 7B are schematic cross -sectional views
To produce a high - quality nitride semiconductor device at illustrating the method for producing the AlGaN /GaN
low cost, for example , a nitride semiconductor layer may be HEMT according to the second embodiment in order of
formed on a common Si substrate by an epitaxial growth
method . FIG . 8 is a connection diagram illustrating a schematic
However, Si and a nitride semiconductor differ signifi- 55 structure of a power -supply unit according to a third embodi
cantly from each other not only in lattice constant but also ment; and
in thermal expansion coefficient. Thus, in order to grow a FIG . 9 is a connection diagram illustrating a schematic
high - quality nitride semiconductor layer, an appropriately structure of a high -frequency amplifier according to a fourth
designed buffer layer is used . embodiment.
To resolve the lattice mismatch and the difference in 60
thermal expansion coefficient between Si and the nitride DESCRIPTION OF EMBODIMENTS
semiconductor as much as possible , the buffer layer is
formed so as to have a relatively large thickness. First Embodiment
As a result , in the case where a HEMT including a nitride
semiconductor multilayer structure containing the buffer 65 In this embodiment, an AlGaN /GaN HEMT composed of
layer is fabricated , there is a problem in which a leakage a nitride semiconductor is disclosed as a compound semi
current (off-leakage current) passes through the buffer layer conductor device .
 US 9 ,831,310 B2
FIGS . 1A to 2B are schematic cross-sectional views sure . A lower growth temperature or a lower growth pressure
illustrating a method for producing an AlGaN /GaN HEMT results in a higher C concentration in AlGaN .
according to a first embodiment in order of steps. An In this embodiment, the Al compositions and the C
element isolation structure (not illustrated ) is formed by the concentrations ofAlGal. N , Al,Ga -, N , and Al,Ga - N are
injection of argon (Ar) or the like into an element isolation 5 adjusted as described below . The growth conditions include
region . a V /III ratio of about 100 to about600, a growth temperature
For example , a Si substrate is prepared as a substrate for of about 1000° C ., and a growth pressure of about 5 kPa.
growth . Examples of a substrate that may be used in place AlGa - N is grown so as to have a thickness of about 200
of the Si substrate include SiC substrates, sapphire sub - nm , an Al composition x of about 0 .8sxsabout 0 . 9 ( for
strates , and GaAs substrates. The substrate may be a semi- example , x = about 0 . 9 ), and a C concentration of about
insulating substrate or a conductive substrate . 5x1017/ cm3 to about 3x1018/ cm3 ( for example , about
As illustrated in FIGS. 1A to 1D , compound semiconduc - 1x1018/cm°).
tors are sequentially grown on a Si substrate 1 by, for Al,Gal- N is grown so as to have a thickness ofabout 200
example , a metal organic vapor phase epitaxy (MOVPE ) 16 nm , an Al composition y of about 0 .6sysabout 0 .7 (for
method to form a compound semiconductor multilayer example, y = about 0 .6 ), and a C concentration of about
structure 10 (FIG . 1D ). The compound semiconductor mul 3x1018 /cm to about 6x1018/ cm3 ( for example , about
tilayer structure 10 includes a first buffer layer 2 , a second 5x1018/ cm°).
buffer layer 3 , an electron transit layer 4 , and an electron Al Gal- N is grown so as to have a thickness of about 200
supply layer 5 . These layers are sequentially stacked to form 20 nm , an Al composition z of about 0 .2szsabout 0 .3 (for
the compound semiconductor multilayer structure 10 . example, z = about 0 .2 ), and a C concentration of about
Instead of the MOVPE method, a molecular beam epitaxy 6x1018 /cm3 to about 2x101 / cm3 ( for example, about
(MBE ) method or the like may be used . 1x1019 /cm ).
As illustrated in FIG . 1A , the first buffer layer 2 is formed As described above, Al,Ga -xN , Al,Ga -„ N , and
on the Si substrate 1 . 25 Al.GaN are sequentially grown . Thereby, the second
Specifically, AIN is grown as an initial layer on the Si buffer layer 3 in which the AlGaN sublayers 3a , 3b , and 30
substrate 1 having an upper surface of the ( 111 ) plane so as are stacked is formed on the first buffer layer 2 .
to have a thickness of about 200 nm . With respect to the As illustrated in FIG . 1C , the electron transit layer 4 is
growth conditions of AIN , a gas mixture of trimethylalumi- formed on the second buffer layer 3 . The electron transit
num ( TMA ) gas and ammonia (NH ) gas is used as a 30 layer 4 includes a lower layer region 4a and an upper layer
raw -material gas. The growth conditions include a V /III region 4b.
ratio (a ratio of theNHz gas to TMA gas) in the raw -material Specifically, GaN is grown in such a manner that the
gas of about 1000 to about 2000 , a growth temperature of lower layer region 4a has a high carbon ( C ) concentration
about 1000° C ., and a growth pressure of about 5 kPa. and a higher C concentration than the AlGaN sublayer 3c
Thereby, the first buffer layer 2 is formed on the Si substrate 35 and that the upper layer region 4b has a very low C
1. The first buffer layer 2 contains a small amount of carbon concentration and a lower C concentration than the first
( C ) as described below because the raw -material gas con buffer layer 2 .
tains TMA gas. A higher V /III ratio results in a lower C gas mixture of TMG gas and NHz gas is used as a
concentration . The first buffer layer 2 has a C concentration raw -material gas for GaN . The V /III ratio (the ratio of NH3
of, for example, about 5x1017/cm3. 40 gas to TMG gas ) in the raw -material gas is adjusted to
As illustrated in FIG . 1B , the second buffer layer 3 is control the C concentration in the lower layer region ofGaN .
formed on the first buffer layer 2 . The second buffer layer 3 TMG gas has methyl groups. Thus, the C concentration is
is formed so as to have a multilayer structure including , for adjusted by controlling the V /III ratio (carbon autodoping )
example , three AlGaN sublayers 3a , 3b , and 3c . without the doping of carbon (C ) on purpose . A lower V / III
Specifically , AlGaN is grown in such a manner that the Al 45 ratio results in a higher C concentration in Gan . The C
composition decreases with increasing distance from its concentration may be controlled by adjusting the growth
lower surface toward its upper surface and that the carbon temperature or growth pressure. A lower growth temperature
( C ) concentration increases with increasing distance from or a lower growth pressure results in a higher C concentra
the lower surface toward the upper surface . Here , tion in Gan
GaN .
Al,Gal- N , A1,Gal - N , and Al Gal- N are sequentially 50 In this embodiment, the lower layer region 4a of GaN is
grown in such a manner that 0 < z < y < x < 1 is satisfied and that grown so as to have a thickness of about 200 nm . The growth
the C concentration increases in that order, provided that the conditions include a V /III ratio of about 30 to about 100 , a
C concentration in Al,Ga N is significantly higher than growth temperature of about 1000° C ., and a growth pres
that in the first buffer layer 2 . sure of about 10 kPa in order to form the lower layer region
A gas mixture of TMA gas, trimethylgallium ( TMG ) gas , 55 4a having a higher C concentration than the AlGaN sublayer
and NH? gas is used as a raw -material gas for AlGaN . The 3c . The lower layer region 4a has a C concentration ofabout
flow ratio of TMA gas to TMG gas is adjusted to control the 2x101 cm to about 1x102 / cm ( for example , about
Al composition in AlGaN . A higher flow ratio of TMG gas 5x101°/cm°).
to TMA gas results in a lower Al composition . The V /III Subsequently , the upper layer region 4b of GaN is grown
ratio (the ratio of NHz gas to TMA gas and TMG gas ) in the 60 so as to have a thickness of about 1000 nm . The growth
raw -material gas is adjusted to control the C concentration conditions include a V / III ratio of about 3000 to about 8000 ,
in AlGaN . TMA gas and TMG gas have methyl groups. a growth temperature of about 1000° C ., a growth pressure
Thus, the C concentration is adjusted by controlling the V /III of about 20 kPa in order to form the upper layer region 4b
ratio ( carbon autodoping ) without the doping of carbon ( C ) having a lower C concentration than the first buffer layer 2 .
on purpose . A lower V /III ratio results in a higher C 65 The upper layer region 4b has a C concentration of about
concentration in AlGaN . The C concentration may be con - 1x1016 /cm3 to about 1x1017 /cm3 ( for example , about
trolled by adjusting the growth temperature or growth pres - 2x1016/cm°).
 US 9 ,831, 310 B2
GaN is grown as described above to form the electron Then steps, such as a step of forming leads connected to
transit layer 4 composed of GaN on the second buffer layer the source electrode 6 , the drain electrode 7 , and the gate
3 , the electron transit layer 4 including the lower layer electrode 8 are performed to form the Schottky -type AIGAN /
region 4a and the upper layer region 4b . GaN HEMT according to this embodiment.
As illustrated in FIG . 1D , the electron supply layer 5 is 5 In this embodiment, the compound semiconductor mul
formed on the electron transit layer 4 . tilayer structure 10 included in the AlGaN /GaN HEMT, a
Specifically , AlGaN is grown on the electron transit layer buffer between the Si substrate 1 and the electron transit
4 so as to have a thickness of about 20 nm . With respect to layer 4 composed of GaN has a multilayer structure includ
the growth conditions of AlGaN , a gas mixture of TMA gas, ing the first buffer layer 2 composed of AIN and the second
TMG gas , and NH? gas is used as a raw -material gas . The 10 buffer layer 3 composed of AlGaN . The first buffer layer 2
growth conditions include a V /III ratio ( a ratio of NH? gas serves to inhibit the reaction of Si with Ga between the Si
to TMA gas and TMG gas ) in the raw -material gas of about substrate 1 and the second buffer layer 3 and buffer a
1000 , a growth temperature of about 1000° C ., and a growth difference in lattice constant between Si and AlGan , for
pressure of about 10 kPa. Thereby , the electron supply layer example .
5 is formed on the electron transit layer 4 . 15 FIG . 3 is a characteristic diagram illustrating the C
In this way, the compound semiconductor multilayer concentration distribution of the layers in the AlGaN /GaN
structure 10 including the first buffer layer 2 , the second HEMT according to this embodiment.
buffer layer 3 , the electron transit layer 4 , and the electron The first buffer layer 2 has a significantly low C concen
supply layer 5 stacked in that order is formed . tration , for example, about 5x10 + '/ cmº.
In the compound semiconductor multilayer structure 10 , 20 In the second buffer layer 3 , the carbon concentration
a two -dimensional electron gas ( 2DEG ) is generated in the increases with increasing distance from the lower surface
vicinity of the boundary between the electron transit layer 4 toward the upper surface . That is , the C concentration
and the electron supply layer 5 . The 2DEG is generated by increases in the following order : the AlGaN sublayers 3a ,
a difference in lattice constant between the compound semi- 3b , and 3c . The AIGaN sublayers 3a , 3b , and 3c have C
conductor (GaN here ) and the compound semiconductor of 25 concentrations of, for example , about 1x1018 / cm ” , about
the electron supply layer 5 (AIGaN here ). 5x1018 /cm ", and about 1x1019/cm ", respectively .
Subsequently , as illustrated in FIG . 2A , a source electrode In the electron transit layer 4 , the lower layer region 4a
6 and a drain electrode 7 are formed . has a higher C concentration than the AlGaN sublayer 3c and
Specifically , a resist mask configured to form the source a C concentration of, for example , about 5x10 + % / cm " . In
electrode and the drain electrode is formed . Here, a bilayer 30 contrast, the upper layer region 4b has a lower C concen
resist with an overhang structure , which is suitable for an tration than the first buffer layer 2 and a C concentration of,
evaporation method or a lift -off process , is used . The resist for example , about 2x10 ' 7cm . .
is applied on the electron supply layer 5 . Openings config - In the AlGaN /GaN HEMT, the second buffer layer 3
ured to expose portions where the source electrode and the contains a relatively large amount of carbon (C ) as a whole .
drain electrode will be formed are formed . In this way, the 35 The lower layer region 4a of the electron transit layer 4 has
resist mask including the openings is formed . a significantly high C concentration . Carbon has the function
Electrode materials, such as Ti/ Al, are deposited by, for of trapping electrons ; hence, residual carrier concentrations
example , an evaporation method on the resist mask and the in the second buffer layer 3 and the lower layer region 4a of
portions inside the openings. The thickness of Ti is about the electron transit layer 4 are significantly reduced to inhibit
100 nm . The thickness of Al is about 300 nm . The resist 40 the occurrence of an off-leakage current, thereby improving
mask and Ti/Al deposited thereon are removed by a lift -off the breakdown voltage .
process . The Si substrate 1 is subjected to heat treatment in , Here , in the case where the C concentrations in the AIGN
for example , a nitrogen atmosphere at about 400° C . to about buffer layer and the lower layer region of the GaN electron
1000° C ., for example, about 600° C ., to form an ohmic transit layer are significantly increased , current collapse may
contact between remaining Ti/Al and the electron supply 45 be generated , and the crystallinity of the compound semi
layer 5 . When the ohmic contact between Ta /Al and the conductor multilayer structure including the electron transit
electron supply layer 5 is formed , the heat treatment may not layer and the electron supply layer may be reduced .
be performed . In this way , the source electrode 6 and the A higher C content (sheet concentration of C ) of the
drain electrode 7 are formed on the electron supply layer 5 . compound semiconductor multilayer structure results in
Next, as illustrated in FIG . 2B , a gate electrode 8 is 50 more frequent occurrence of current collapse . In this
formed . embodiment, the off-leakage current in the electron transit
Specifically , a resist mask configured to form the gate layer is generated in the lower layer region . Thus, the C
electrode is formed . Here , a bilayer resist with an overhang concentration in the lower layer region 4a of the electron
structure , which is suitable for an evaporation method or a transit layer 4 is increased , and the C concentration in a
lift-off process , is used . The resist is applied on the electron 55 region (upper layer region 4b ) of the electron transit layer 4
supply layer 5 . An opening configured to expose a portion other than the lower layer region 4a is minimized . This
where the gate electrode will be formed is formed. In this structure sufficiently inhibits the generation of the residual
way , the resist mask including the opening is formed . carrier concentration in the electron transit layer 4 and
Electrode materials , such as Ni/Au , are deposited by, for suppresses the total content of C in the electron transit layer
example , an evaporation method on the resist mask and the 604, thereby inhibiting the occurrence of current collapse .
portion inside the opening. The thickness of Ni is about 50 The crystallinity of the compound semiconductor multi
nm . The thickness of Au is about 300 nm . The resist mask layer structure decreases as the C content ( sheet concentra
and the Ni/ Au deposited thereon are removed by a lift -off tion of C ) of the compound semiconductor multilayer struc
process . Thereby, the gate electrode 8 that forms a Schottky ture increases . In this embodiment, with respect to the
contact with the electron supply layer 5 is formed at a 65 crystallinity of the compound semiconductor multilayer
predetermined position on the electron supply layer 5 and structure , it is found that for example , when the total C
between the source electrode 6 and the drain electrode 7 . content is substantially fixed , a higher C concentration in an
 US 9 ,831,310 B2
initially grown portion of the compound semiconductor pound semiconductor multilayer structure 10 is maintained ,
multilayer structure , in other words, a higher C concentra thus inhibiting the occurrence of an off -leakage current to
tion in a lower layer portion of the compound semiconductor improve the breakdown voltage . The first buffer layer 2 has
multilayer structure , results in a more adverse effect on the a lower C concentration than the AlGaN sublayer 3a , which
crystallinity . 5 is the lowermost sublayer of the second buffer layer 3 . This
The effect of the initially grown layer, that is , the first may ensure the excellent crystallinity of the compound
buffer layer composed of AIN here , of the compound semi- semiconductor multilayer structure 10 .
conductor multilayer structure on the crystallinity of the Furthermore , in this embodiment, the second buffer layer
compound semiconductor multilayer structure is investi- 3 is formed in such a manner that the Al compositions in the
gated . FIG . 4 is a characteristic diagram illustrating the 10 AlGaN sublayers 3a , 3b , and 3c constituting the second
relationship between the V / III ratio during the growth of buffer layer 3 decrease in that order. The Al composition in
AIN serving as the first buffer layer and the twist value of the the AlGaN buffer layer decreases with increasing distance
compound semiconductor multilayer structure . A lower from the lower surface toward the upper surface , thereby
V /III ratio results in a higher C concentration in the layer. further improving the crystallinity of the compound semi
The twist value indicates the degree of the twist of the 15 conductor multilayer structure 10 .
crystal and is used as an index to the degree of crystallinity. In this embodiment, the lower layer region 4a of the
A lower twist value indicates better crystallinity . The twist of electron transit layer 4 has a high C concentration described
the crystal causes local fluctuations in potential and thus acts above , whereas the other region ( the upper layer region 4b )
as a scattering factor for electrons, passing through the of the electron transit layer 4 has a very low C concentration
electron transit layer, in the 2DEG . Furthermore, the crystal 20 (lower than the first buffer layer 2 ). In this case, the total C
twist forms a trap level, leading to the degradation of current content of the compound semiconductor multilayer structure
collapse characteristics. In the device fabrication, it is desir - 10 is suppressed to a relatively low level owing to the C
able to achieve high crystallinity . concentration distribution achieved in the second buffer
FIG . 4 demonstrates that a lower V /III ratio , that is, a layer 3 . Furthermore , in the upper region of the electron
higher C concentration in the first buffer layer serving as the 25 transit layer 4 , the C concentration is steeply suppressed to
initial layer, results in a higher twist value, degrading the a low level. The use of this structure may inhibit the
crystallinity of the compound semiconductor multilayer occurrence of current collapse.
structure . In the compound semiconductor multilayer struc As has been described above, this embodiment provides
ture , the crystallinity of a layer formed at an earlier stage of the highly reliable Schottky -type AlGaN /GaN HEMTwhich
the growth of the structure is more adversely affected by 30 inhibits the occurrence of an off-leakage current and
carbon ( C ) , which is an impurity . In the case where the buffer achieves a high breakdown voltage while the crystallinity of
layers have a multilayer structure composed of AIN and the compound semiconductor multilayer structure 10 is
AlGaN , let us consider AlGaN serving as the second buffer maintained at a satisfactory level and the occurrence of
layer. As with AIN , a higher C concentration in a portion current collapse is inhibited .
formed at an earlier stage of the growth of the compound 35 Modification
semiconductor multilayer structure , that is, an initially Amodification of the first embodiment will be described
grown portion (lower layer portion ) of AlGaN , results in a below . In this embodiment, the Schottky -type AlGaN /GaN
higher twist value, degrading the crystallinity of the com - HEMT is exemplified . In this modification , what is called a
pound semiconductor multilayer structure . metal- insulator - semiconductor (MIS ) -type AIGAN /GaN
Here , let us consider the case where the buffer layer is 40 HEMT, which includes a gate electrode formed on a gate
formed in such a manner that a high C concentration is insulating film , is exemplified .
achieved at the lower surface and that the C concentration FIGS. 5A to 5C are schematic cross- sectional views
decreases with increasing distance from a lower surface illustrating main steps of a method for producing the AlGaN /
toward an upper surface , in order to reduce the total c GaN HEMT according to the modification of the first
content of the buffer layer . In this case , if the C concentration 45 embodiment.
in the buffer layer is maintained at an appropriate level, it is In this modification , as with the first embodiment, the
possible to inhibit the occurrence of an off-leakage current steps illustrated in FIGS. 1A to 1D and 2A are performed .
Unfortunately, when such a buffer layer is formed , an FIG . 5A illustrates a state in which the source electrode 6
initially grown portion (lower layer portion ) of the buffer and the drain electrode 7 are formed on the compound
layer has a high C concentration , thereby resulting in a 50 semiconductor multilayer structure 10 .
compound semiconductor multilayer structure having a very Subsequently, as illustrated in FIG . 5B , a gate insulating
low degree of crystallinity . film 11 is formed .
In this embodiment, the carbon (C ) concentration in the Specifically , for example , Al2O3 is deposited as an insu
second buffer layer 3 increases with increasing distance lating material on the compound semiconductor multilayer
from the lower surface toward the upper surface . In other 55 structure 10 . A1, 0 , is deposited by , for example , an atomic
words, the AlGaN sublayer 3a , which is an initially grown layer deposition (ALD ) method so as to have a thickness of
portion (lower layer portion of the second buffer layer 3 , about 2 nm to about 200 nm (about 10 nm here ). Thereby,
has a low C concentration. The AlGaN sublayer 3b has a the gate insulating film 11 is formed .
higher C concentration than the AlGaN sublayer 3a . The The deposition of A1, 0 , may be performed by, for
AlGaN sublayer 3c has a higher C concentration than the 60 example , a plasma- enhanced chemical vapor deposition
AlGaN sublayer 3b . The lower layer region 4a of the (CVD ) method or a sputtering method instead of the ALD
electron transit layer 4 has a higher C concentration than the method . A nitride of Al or an oxynitride of Al may be used
AlGaN sublayer 3c, which is the uppermost sublayer of the instead of the deposition of A1,02. Further examples of a
second buffer layer 3 . The use of the structure significantly material that may be used instead of A1, 0 , include oxides ,
reduces the residual carrier concentrations in the second 65 nitrides , and oxynitrides of Si, Hf, Zr, Ti, Ta , and W . For
buffer layer 3 and the lower layer region 4a of the electron example , materials appropriately selected therefrom may be
transit layer 4 while the excellent crystallinity of the com - deposited to form a multilayer gate insulating film .
 US 9 ,831, 310 B2
10
Subsequently , as illustrated in FIG . 5C , a gate electrode is adjusted by controlling the V /III ratio (carbon autodoping)
12 is formed . without the doping of carbon (C ) on purpose . A lower V /III
Specifically, a resist mask configured to form the gate ratio results in a higher C concentration in AlGaN . The C
electrode is formed . Here, a bilayer resist with an overhang concentration may be controlled by adjusting the growth
structure , which is suitable for an evaporation method or a 5 temperature or growth pressure . A lower growth temperature
lift -off process , is used . The resist is applied on the gate or a lower growth pressure results in a higher C concentra
insulating film 11. An opening configured to expose a tion in AlGaN .
portion where the gate electrode will be formed is formed . In this embodiment, the Al composition and the C con
In this way, the resistmask including the opening is formed . centration of AlGaN are adjusted as described below . The
Electrode materials, such as Ni/Au, are deposited by, for 10 growth conditions include a V / III ratio of about 100 to about
example , an evaporation method on the resist mask and the 600 , a growth temperature of about 1000° C ., and a growth
portion inside the opening . The thickness of Ni is about 50
nm . The thickness of Au is about 300 nm . The resist mask pressure of about 5 kPa .
and the Ni/ Au deposited thereon are removed by a lift -off At the lower surface , the Al composition of AlGaN is
process. Thereby. the gate electrode 12 is formed at a 15 about 0 . 8 to about 0 . 9 ( for example , about 0 . 9 ). Atthe upper
predetermined position on the gate insulating film 11 and surface, the Al composition of AlGaN is about 0 .2 to about
between the source electrode 6 and the drain electrode 7 . 0 .3 (for example , about 0 .2). The Al composition of AIGN
Then steps , such as a step of forming leads connected to is adjusted so as to decrease gradually with increasing
the source electrode 6 , the drain electrode 7 , and the gate distance from the lower surface toward the upper surface .
electrode 12 are performed to form the MIS -type AlGaN / 20 At the lower surface, the C concentration in AlGaN is
GaN HEMT according to this modification . about 5x1017 /cm to about 5x1018 /cm3 (for example , about
This modification provides the highly reliable MIS -type 5x1018 /cm ). At the upper surface , the C concentration in
AlGaN /GaN HEMT which inhibits the occurrence of an AlGaN is about 5x1018 /cm to about 1x1020/cm ( for
off - leakage current and achieves a high breakdown voltage example , about 1x1019cm " ). The C concentration in AlGaN
while the crystallinity of the compound semiconductor mul - 25 is adjusted so as to increase gradually with increasing
tilayer structure 10 is maintained at a satisfactory level and distance from the lower surface toward the upper surface .
the occurrence of current collapse is inhibited . As described above , the second buffer layer 21 composed
In this modification, the gate insulating film 11 may be of AlGaN whose Al composition (decreases toward the top)
formed only on a portion of a surface of the electron supply and C concentration (increases toward the top ) are adjusted
layer 5 located under the gate electrode 12 . In this case, for 30 is formed on the first buffer layer 2 .
example , silicon nitride is suitably deposited on other por - Subsequently , as illustrated in FIG . 6C , the electron transit
tions of the surface of the electron supply layer 5 (portions layer 4 is formed on the second buffer layer 21. The electron
between the source electrode 6 and the gate electrode 8 and transit layer 4 includes the lower layer region 4a and the
between the gate electrode 8 and the drain electrode 7 ) to upper layer region 4b .
form a passivation film . 35 Specifically, GaN is grown in such a manner that the
lower layer region has a high carbon (C ) concentration and
Second Embodiment a higher C concentration than the upper surface of the
second buffer layer 21 and that the upper layer region has a
In a second embodiment, as with the first embodiment, a very low C concentration and a lower C concentration than
Schottky - type AlGaN /GaN HEMT is disclosed . This 40 the first buffer layer 2 .
Schottky -type AIGN /GaN HEMT differs from that in the A gas mixture of TMG gas and NH? gas is used as a
first embodiment in the structure of the second buffer layer. raw -material gas for Gan . The V /III ratio (the ratio of NH ,
FIGS. 6A to 7B are schematic cross -sectional views gas to TMG gas ) in the raw -material gas is adjusted to
illustrating a method for producing the AlGaN /GaN HEMT control the C concentration in the lower layer region ofGaN .
according to the second embodiment in order of steps . 45 TMG gas has methyl groups. Thus, the C concentration is
In this embodiment, as with the first embodiment, the step adjusted by controlling the V /III ratio (carbon autodoping)
illustrated in FIG . 1A is first performed . FIG . 6A illustrates without the doping of carbon (C ) on purpose. A lower V /III
a state in which the first buffer layer 2 is formed on the Si ratio results in a higher C concentration in GaN . The C
substrate 1 . concentration may be controlled by adjusting the growth
Subsequently , as illustrated in FIG . 6B , a second buffer 50 temperature or growth pressure. A lower growth temperature
layer 21 is formed on the first buffer layer 2 . or a lower growth pressure results in a higher C concentra
Specifically , AlGaN is grown in such a manner that the Al tion in GaN .
composition decreases gradually with increasing distance In this embodiment, the lower layer region 4a of GaN is
from its lower surface toward its upper surface and that the grown so as to have a thickness of about 200 nm . The growth
carbon (C ) concentration increases gradually with increas - 55 conditions include a V /III ratio of about 30 to about 100 , a
ing distance from the lower surface toward the upper sur - growth temperature of about 1000° C ., and a growth pres
face , provided that the C concentration at the lower surface sure of about 10 kPa in order to form the lower layer region
of AlGaN is significantly higher than that in the first buffer4a having a higher C concentration than the upper surface of
layer 2 . the second buffer layer 21. The lower layer region 4a has a
A gas mixture of TMA gas, TMG gas , and NH? gas is used 60 C concentration of about 1x10 cm to about 1x102° /cm
as a raw -material gas for AlGaN . The flow ratio of TMA gas (for example , about 5x101 / cm ») .
to TMG gas is adjusted to control the Al composition in Subsequently, the upper layer region 4b ofGaN is grown
AlGaN . A higher flow ratio of TMG gas to TMA gas results so as to have a thickness of about 1000 nm . The growth
in a lower Al composition . The V / III ratio (the ratio of NH conditions include a V / III ratio of about 3000 to about 8000 ,
gas to TMA gas and TMG gas ) in the raw -material gas is 65 a growth temperature of about 1000° C ., a growth pressure
adjusted to control the C concentration in AlGaN . TMA gas of about 20 kPa in order to form the upper layer region 4b
and TMG gas have methyl groups. Thus , the C concentration having a lower C concentration than the first buffer layer 2 .
 US 9 ,831,310 B2
12
The upper layer region 4b has a C concentration of about contact with the electron supply layer 5 is formed at a
1x1016/ cm² to about 1x101 /cm3 (for example, about predetermined position on the electron supply layer 5 and
2x1016/cm3). between the source electrode 6 and the drain electrode 7 .
GaN is grown as described above to form the electron Then steps, such as a step of forming leads connected to
transit layer 4 composed of GaN on the second buffer layer 5 the source electrode 6 , the drain electrode 7 , and the gate
21 , the electron transit layer 4 including the lower layer electrode 8 are performed to form the Schottky -type AlGaN /
region 4a and the upper layer region 4b . GaN HEMT according to this embodiment.
As illustrated in FIG . 6D , the electron supply layer 5 is In the AlGaN /GaN HEMT according to this embodiment,
formed on the electron transit layer 4 . the second buffer layer 21 contains a relatively large amount
Specifically , AlGaN is grown on the electron transit layer 10 of carbon ( C ) as a whole . The lower layer region 4a of the
4 so as to have a thickness of about 20 nm . With respect to electron transit layer 4 has a significantly high C concen
the growth conditions of AlGaN , a gas mixture of TMA gas, tration . Carbon has the function of trapping electrons ; hence ,
TMG gas , and NH , gas is used as a raw -material gas . The residual carrier concentrations in the second buffer layer 21
growth conditions include a V /III ratio ( a ratio of NHz gas and the lower layer region 4a of the electron transit layer 4
to TMA gas and TMG gas ) in the raw -material gas of about 15 are significantly reduced to inhibit the occurrence of an
1000 , a growth temperature of about 1000° C ., and a growth off -leakage current, thereby improving the breakdown volt
pressure of about 10 kPa . Thereby , the electron supply layer age .
5 is formed on the electron transit layer 4 . A higher C content (sheet concentration of C ) of the
In this way , a compound semiconductor multilayer struc - compound semiconductor multilayer structure results in
ture 20 including the first buffer layer 2, the second buffer 20 more frequent occurrence of current collapse . In this
layer 21, the electron transit layer 4 , and the electron supply embodiment, the off-leakage current in the electron transit
layer 5 stacked in that order is formed . layer is generated in the lower layer region . Thus, the C
In the compound semiconductor multilayer structure 20 , concentration in the lower layer region 4a of the electron
a two - dimensional electron gas (2DEG ) is generated in the transit layer 4 is increased , and the C concentration in a
vicinity of the boundary between the electron transit layer 4 25 region (upper layer region 4b ) of the electron transit layer 4
and the electron supply layer 5 . The 2DEG is generated by other than the lower layer region 4a is minimized . This
a difference in lattice constant between the compound semi- structure sufficiently inhibits the generation of the residual
conductor (GaN here ) and the compound semiconductor of carrier concentration in the electron transit layer 4 and
the electron supply layer 5 (AlGaN here ). suppresses the total content of C in the electron transit layer
Subsequently , as illustrated in FIG . 7A , the source elec - 30 4 , thereby inhibiting the occurrence of current collapse .
trode 6 and the drain electrode 7 are formed . The crystallinity of the compound semiconductor multi
Specifically , a resist mask configured to form the source layer structure decreases as the C content ( sheet concentra
electrode and the drain electrode is formed . Here , a bilayer tion of C ) of the compound semiconductor multilayer struc
resist with an overhang structure, which is suitable for an ture increases . In this embodiment, with respect to the
evaporation method or a lift -off process , is used . The resist 35 crystallinity of the compound semiconductor multilayer
is applied on the electron supply layer 5 . Openings config structure , for example , when the total C content is fixed , a
ured to expose portions where the source electrode and the higher C concentration in an initially grown portion of the
drain electrode will be formed are formed . In this way, the compound semiconductor multilayer structure , in other
resist mask including the openings is formed . words, a higher C concentration in a lower layer portion of
Electrode materials, such as Ti/ Al, are deposited by, for 40 the compound semiconductor multilayer structure, results in
example , an evaporation method on the resist mask and the a more adverse effect on the crystallinity .
portions inside the openings. The thickness of Ti is about In this embodiment, in the second buffer layer 21, the C
100 nm . The thickness of Al is about 300 nm . The resist concentration increases gradually with increasing distance
mask and Ti/ Al deposited thereon are removed by a lift-off from the lower surface toward the upper surface . The lower
process . The Si substrate 1 is subjected to heat treatment in , 45 layer region 4a of the electron transit layer 4 has a higher C
for example , a nitrogen atmosphere at about 400° C . to about concentration than the upper surface of the second buffer
1000° C ., for example, about 600° C ., to form an ohmic layer 21 . The use of the structure reduces the residual carrier
contact between remaining Ti/ Al and the electron supply concentrations in the second buffer layer 21 and the lower
layer 5 . When the ohmic contact between Ta/ Al and the layer region 4a of the electron transit layer 4 while the
electron supply layer 5 is formed , the heat treatmentmay not 50 excellent crystallinity of the compound semiconductor mul
be performed . In this way, the source electrode 6 and the tilayer structure 20 is maintained , thus inhibiting the occur
drain electrode 7 are formed on the electron supply layer 5 . rence of an off - leakage current to improve the breakdown
Next, as illustrated in FIG . 7B , the gate electrode 8 is voltage . The first buffer layer 2 has a lower C concentration
formed . than the lower surface of the second buffer layer 21 . This
Specifically , a resist mask configured to form the gate 55 may ensure the excellent crystallinity of the compound
electrode is formed . Here , a bilayer resist with an overhang semiconductor multilayer structure 20 .
structure , which is suitable for an evaporation method or a Furthermore , in this embodiment, the second buffer layer
lift -off process , is used . The resist is applied on the electron 21 is formed in such a manner that the Al composition
supply layer 5 . An opening configured to expose a portion decreases gradually with increasing distance from the lower
where the gate electrode will be formed is formed . In this 60 surface toward the upper surface . The Al composition in the
way, the resist mask including the opening is formed . AlGaN buffer layer decreases with increasing distance from
Electrode materials, such as Ni/ Au , are deposited by, for the lower surface toward the upper surface , thereby further
example , an evaporation method on the resist mask and the improving the crystallinity of the compound semiconductor
portion inside the opening. The thickness of Ni is about 50 multilayer structure 20 .
nm . The thickness of Au is about 300 nm . The resist mask 65 In this embodiment, the lower layer region 4a of the
and the Ni/Au deposited thereon are removed by a lift -off electron transit layer 4 has a high C concentration described
process. Thereby, the gate electrode 8 that forms a Schottky above, whereas the other region ( the upper layer region 4b )
 US 9 ,831,310 B2
13 14
of the electron transit layer 4 has a very low C concentration The high - frequency amplifier according to this embodi
(lower than the first buffer layer 2 ). In this case , the total C ment includes a digital predistortion circuit 41 , mixers 42a
content of the compound semiconductor multilayer structure and 42b , and a power amplifier unit 43 .
20 is suppressed to a relatively low level owing to the C The digital predistortion circuit 41 compensates the non
concentration distribution achieved in the second buffer 5 linear distortion of an input signal. Themixer 42a mixes an
layer 21. Furthermore, in the upper region of the electron alternating current signal with the input signal whose non
transit layer 4 , the C concentration is steeply suppressed to linear distortion has been compensated . The power amplifier
a low level. The use of this structure may inhibit the unit 43 amplifies the input signalmixed with the alternating
occurrence of current collapse . current signal. The power amplifier unit 43 includes one
As has been described above, this embodiment provides 10 selected from AlGaN /GaN HEMTs according to the first
the highly reliable Schottky - type AlGaN /GaN HEMTwhich embodiment, the modification of the first embodiment, and
inhibits the occurrence of an off- leakage current and the second embodiment. In FIG . 9 , for example , on the basis
achieves a high breakdown voltage while the crystallinity of of switching of the switch , an output signal can be mixed
the compound semiconductor multilayer structure 20 is with the alternating current signal by themixer 42b , and the
maintained at a satisfactory level and the occurrence of of 15 mixed signal is fed to the primary circuit 31 .
current collapse is inhibited . In this embodiment, the high - frequency amplifier includes
the highly reliable AlGaN /GaN HEMT which inhibits the
In this embodiment, as with the modification of the first occurrence of an off -leakage current and which achieves a
embodiment, a gate insulating film may be formed between high breakdown voltage while the crystallinity of the com
the compound semiconductor multilayer structure 20 and the 20 pound semiconductor multilayer structure is maintained at a
gate electrode 8 to form a MIS -type AlGaN /GaN HEMT. satisfactory level and the occurrence of current collapse is
Third Embodiment inhibited . Thereby, the highly reliable high - frequency ampli
fier with high breakdown voltage is made .
In a third embodiment, a power -supply unit including one 25 Other Embodiments
selected from AlGaN /GaN HEMTs according to the first
embodiment, the modification of the first embodiment, and In the first to fourth embodiments and the modification of
the second embodiment is disclosed . the first embodiment, the AlGaN /GaN HEMTs have been
FIG . 8 is a connection diagram illustrating a schematic exemplified as compound semiconductor devices. The fol
structure of the power -supply unit according to the third 30 lowing HEMTs in addition to the AlGaN /GaN HEMTs may
embodiment. be used for compound semiconductor devices.
The power -supply unit according to this embodiment
includes a high - voltage primary circuit 31, a low -voltage Example 1 : Other HEMTS
secondary circuit 32 , and a transformer 33 arranged between
the primary circuit 31 and the secondary circuit 32 . 35 In this example , InAIN /GaN HEMTs are disclosed as
The primary circuit 31 includes an alternating- current compound semiconductor devices .
power supply 34 , what is called a bridge rectifier circuit 35 , InAIN and GaN are compound semiconductors whose
and a plurality of, for example , four switching elements 36a , lattice constants may be brought close to each other by
366, 36c, and 36d . The bridge rectifier circuit 35 includes a adjusting their compositions. In this case , in the first to
switching element 36e. 40 fourth embodiments and the modification of the first
The secondary circuit 32 includes a plurality of, for embodiment described above , the first buffer layers are
example, three switching elements 37a , 37b , and 37c . composed of AIN , the second buffer layers are composed of
In this embodiment, each of the switching elements 36a , AlGaN , the electron transit layers are composed ofGaN , and
36b , 360, 36d, and 36e of the primary circuit 31 is one the electron supply layers are composed of InAIN . In this
selected from AlGaN /GaN HEMTs according to the first 45 case , substantially no piezoelectric polarization occurs .
embodiment, the modification of the first embodiment, and Thus , two - dimensional electron gases are mainly generated
the second embodiment. Each of the switching elements by the spontaneous polarization of InAIN .
37a , 37b , and 37c of the secondary circuit 32 is a common As with the foregoing AlGaN /GaN HEMTs , this example
MIS FET including silicon . provides the highly reliable InAIN /GaN HEMTs each inhib
In this embodiment, the high - voltage circuit includes the 50 iting the occurrence of an off-leakage current and achieving
highly reliable AlGaN /GaN HEMTs each inhibiting the a high breakdown voltage while the crystallinity of the
occurrence of an off-leakage current and achieving a high compound semiconductormultilayer structure is maintained
breakdown voltage while the crystallinity of the compound at a satisfactory level and the occurrence of current collapse
semiconductor multilayer structure is maintained at a satis - is inhibited .
factory level and the occurrence of current collapse is 55
inhibited . Thereby, a highly reliable, high -power power Example 2 : Other HEMTS
supply unit is made.
In this example , InAIGN /GaN HEMTs are disclosed as
Fourth Embodiment compound semiconductor devices .
60 GaN and InAlGaN are compound semiconductors . InAl
In a fourth embodiment, a high - frequency amplifier GaN may have a smaller lattice constant than GaN by
including one selected from AlGaN /GaN HEMTs according adjusting their compositions . In this case , in the first to
to the first embodiment, themodification of the first embodi fourth embodiments and the modification of the first
ment, and the second embodiment is disclosed . embodiment described above , the first buffer layers are
FIG . 9 is a connection diagram illustrating a schematic 65 composed of AIN , the second buffer layers are composed of
structure of the high - frequency amplifier according to the AlGaN , the electron transit layers are composed ofGaN , and
fourth embodiment. the electron supply layers are composed of InAlGaN .
 US 9 ,831,310 B2
15 16
As with the foregoing AlGaN /GaN HEMTs, this example 3. The compound semiconductor device according to
provides the highly reliable InAIGAN /GaN HEMTs each claim 1,
inhibiting the occurrence of an off-leakage current and wherein the first buffer layer has a lower concentration of
achieving a high breakdown voltage while the crystallinity carbon than the lower surface of the second buffer
of the compound semiconductor multilayer structure is 5 4 . layer .
maintained at a satisfactory level and the occurrence of claim The 1,
compound semiconductor device according to
current collapse is inhibited .
All examples and conditional language recited herein are wherein the second buffer layer has three sublayers , and
intended for pedagogical purposes to aid the reader in wherein the concentration of carbon in the second buffer
understanding the invention and the concepts contributed by 10 layer increases with increasing distance from the lower
the inventor to furthering the art, and are to be construed as surface toward the upper surface .
being without limitation to such specifically recited claim The 5 .
1,
compound semiconductor device according to
examples and conditions, nor does the organization of such wherein the concentration of carbon in the second buffer
examples in the specification relate to a showing of the layer increases gradually with increasing distance from
superiority and inferiority of the invention . Although the 15 the lower surface toward the upper surface.
embodiments of the present invention have been described
bed 6 . The compound semiconductor device according to
in detail, it should be understood that the various changes ,
substitutions, and alterations could be made hereto without wherein the first buffer layer has a concentration of carbon
departing from the spirit and scope of the invention . lower than the first sublayer of the second buffer layer .
What is claimed is: 20 7 . A method for producing a compound semiconductor
1. A compound semiconductor device comprising : device, comprising :
a compound semiconductor multilayer structure including forming a first buffer layer composed of AIN including
a first buffer layer composed of AIN and formed on a carbon over a substrate ;
substrate , wherein the first buffer layer contains carbon ; 25forming a second buffer layer composed of AlGaN over
a second buffer layer composed of AlGaN and formed the first buffer layer so that an upper surface of the
over the first buffer layer, wherein the second buffer second buffer layer includes carbon more than a lower
layer contains carbon ; and surface of the second buffer layer ;
an electron transit layer formed over the second buffer forming a lower layer region of an electron transit layer
layer , wherein the electron transit layer includes a 20 over the second buffer layer so that the lower layer
lower layer region and a higher layer region that is region includes carbon more than the upper surface of
formed over the lower layer region , the second buffer layer, and
wherein a concentration of carbon of the second buffer forming a higher layer region of the electron transit layer
layer increases with increasing distance from a lower over the lower layer region so that the higher layer
surface toward an upper surface of the second buffer 25 region includes carbon less than the first buffer layer .
layer, 8 . The method according to claim 7 ,
wherein the second buffer layer has a first sublayer over wherein an Al composition of the second buffer layer
the first buffer layer having a first concentration of decreases with increasing distance from the lower
carbon , and has a second sublayer over the first sub surface toward the upper surface .
layer having a second concentration of carbon higher 40 9 . The method according to claim 7,
than the first concentration of carbon , wherein the first buffer layer has a lower concentration of
wherein the lower layer region of the electron transit layer carbon than the lower surface of the second buffer
contains carbon and has a third concentration of carbon layer.
higher than the second concentration of carbon , and 10. The method according to claim 7 ,
wherein the higher layer region of the electron transit 45 wherein the second buffer layer has three sublayers, and
wherein the concentration of carbon in the second buffer
layer contains carbon and has a fourth concentration of layer increases with increasing distance from the lower
carbon lower than a concentration of carbon of the first surface toward the upper surface .
buffer layer. 11. The method according to claim 7 ,
2 . The compound semiconductor device according to wherein the concentration of carbon in the second buffer
claim 1 , 50 layer increases gradually with increasing distance from
wherein an Al composition of the second buffer layer the lower surface toward the upper surface.
decreases with increasing distance from the lower
surface toward the upper surface . * * * * *